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Here, we demonstrate that exposing WSe\n                    <jats:sub>2<\/jats:sub>\n                    to chloroform provides simple and stable\n                    <jats:italic>p<\/jats:italic>\n                    -type doping. In monolayer WSe\n                    <jats:sub>2<\/jats:sub>\n                    transistors with Pd contacts, chloroform increases the maximum hole current by over 100\u00d7 (&gt;200\u2009\u00b5A\/\u00b5m), reduces\n                    <jats:italic>R<\/jats:italic>\n                    <jats:sub>C<\/jats:sub>\n                    to\u2009~\u20092.5 k\u03a9\u00b7\u03bcm, and retains an on\/off ratio of 10\n                    <jats:sup>10<\/jats:sup>\n                    at room temperature. These improvements persist for over 8 months, survive a 150\u2009\u00b0C thermal anneal, and remain effective down to 10\u2009K, enabling a cryogenic\n                    <jats:italic>R<\/jats:italic>\n                    <jats:sub>C<\/jats:sub>\n                    of\u2009~\u20091 k\u03a9\u00b7\u03bcm. Density functional theory indicates that chloroform strongly physisorbs to WSe\n                    <jats:sub>2<\/jats:sub>\n                    , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe\n                    <jats:sub>2<\/jats:sub>\n                    interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe\n                    <jats:sub>2<\/jats:sub>\n                    transistors with good\n                    <jats:italic>p<\/jats:italic>\n                    -type performance.\n                  <\/jats:p>","DOI":"10.1038\/s41467-025-65604-3","type":"journal-article","created":{"date-parts":[[2026,1,20]],"date-time":"2026-01-20T15:27:08Z","timestamp":1768922828000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping"],"prefix":"10.1038","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-7556-8560","authenticated-orcid":false,"given":"Lauren","family":"Hoang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Robert K. 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