{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T09:29:30Z","timestamp":1789118970608,"version":"build-2803163510"},"reference-count":54,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T00:00:00Z","timestamp":1789084800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T00:00:00Z","timestamp":1789084800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["EXC 2147, Project No. 390858490"],"award-info":[{"award-number":["EXC 2147, Project No. 390858490"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["EXC 2147, Project No. 390858490"],"award-info":[{"award-number":["EXC 2147, Project No. 390858490"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Guangdong Provincial Quantum Science Strategic Initiative"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nat Commun"],"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Quantum spin Hall insulators, with dissipationless edge channels protected by time-reversal symmetry, are promising for low-power and quantum devices. However, experimentally realized examples with sizable nontrivial gaps remain scarce. Monolayer Si\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    has been theoretically predicted to host a room-temperature quantum spin Hall phase, but the absence of a bulk analog has hindered its experimental realization. Here we show that HfTe\n                    <jats:sub>2<\/jats:sub>\n                    provides an ideal van der Waals template for the epitaxial growth of strain-free monolayer Si\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    while preserving its nontrivial topological phase. Scanning tunneling microscopy and spectroscopy reveal an intact (1\u00d71) lattice and a bulk band gap of \u00a0~\u00a0300 meV, consistent with first-principles calculations. Moreover, pronounced edge states extending ~\u00a02.0\u00a0nm from the island boundary are observed in monolayer Si\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    , exhibiting characteristics expected for topological edge modes. Our results establish monolayer Si\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>2<\/jats:sub>\n                    as a large-gap two-dimensional topological-insulator platform for topological phenomena and device concepts at elevated temperatures.\n                  <\/jats:p>","DOI":"10.1038\/s41467-026-77669-9","type":"journal-article","created":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T08:02:05Z","timestamp":1789113725000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Experimental realization of the topologically nontrivial phase in monolayer Si2Te2"],"prefix":"10.1038","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6792-1555","authenticated-orcid":false,"given":"Xiaochun","family":"Huang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lingxiao","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8883-4805","authenticated-orcid":false,"given":"Rui","family":"Xiong","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenbin","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4032-3344","authenticated-orcid":false,"given":"Bao-Tian","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9455-7795","authenticated-orcid":false,"given":"Baisheng","family":"Sa","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7514-5560","authenticated-orcid":false,"given":"Matthias","family":"Bode","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,9,11]]},"reference":[{"key":"77669_CR1","doi-asserted-by":"publisher","first-page":"146802","DOI":"10.1103\/PhysRevLett.95.146802","volume":"95","author":"CL Kane","year":"2005","unstructured":"Kane, C. L. & Mele, E. J. Z2 topological order and the quantum spin Hall effect. Phys. Rev. Lett. 95, 146802 (2005).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR2","doi-asserted-by":"publisher","first-page":"106802","DOI":"10.1103\/PhysRevLett.96.106802","volume":"96","author":"BA Bernevig","year":"2006","unstructured":"Bernevig, B. A. & Zhang, S.-C. Quantum spin Hall effect. Phys. Rev. Lett. 96, 106802 (2006).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR3","doi-asserted-by":"publisher","first-page":"1057","DOI":"10.1103\/RevModPhys.83.1057","volume":"83","author":"X-L Qi","year":"2011","unstructured":"Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057\u20131110 (2011).","journal-title":"Rev. Mod. Phys."},{"key":"77669_CR4","doi-asserted-by":"publisher","first-page":"3045","DOI":"10.1103\/RevModPhys.82.3045","volume":"82","author":"MZ Hasan","year":"2010","unstructured":"Hasan, M. Z. & Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 82, 3045\u20133067 (2010).","journal-title":"Rev. Mod. Phys."},{"key":"77669_CR5","doi-asserted-by":"publisher","first-page":"1757","DOI":"10.1126\/science.1133734","volume":"314","author":"BA Bernevig","year":"2006","unstructured":"Bernevig, B. A., Hughes, T. L. & Zhang, S.-C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757\u20131761 (2006).","journal-title":"Science"},{"key":"77669_CR6","doi-asserted-by":"publisher","first-page":"766","DOI":"10.1126\/science.1148047","volume":"318","author":"M K\u00f6nig","year":"2007","unstructured":"K\u00f6nig, M. et al. Quantum spin Hall insulator state in HgTe quantum wells. Science 318, 766\u2013770 (2007).","journal-title":"Science"},{"key":"77669_CR7","doi-asserted-by":"publisher","first-page":"136603","DOI":"10.1103\/PhysRevLett.107.136603","volume":"107","author":"I Knez","year":"2011","unstructured":"Knez, I., Du, R.-R. & Sullivan, G. Evidence for helical edge modes in inverted InAs\/GaSb quantum wells. Phys. Rev. Lett. 107, 136603 (2011).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR8","doi-asserted-by":"publisher","first-page":"066501","DOI":"10.1088\/0034-4885\/79\/6\/066501","volume":"79","author":"Y Ren","year":"2016","unstructured":"Ren, Y., Qiao, Z. & Niu, Q. Topological phases in two-dimensional materials: a review. Rep. Prog. Phys. 79, 066501 (2016).","journal-title":"Rep. Prog. Phys."},{"key":"77669_CR9","doi-asserted-by":"publisher","first-page":"1344","DOI":"10.1126\/science.1256815","volume":"346","author":"X Qian","year":"2014","unstructured":"Qian, X., Liu, J., Fu, L. & Li, J. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344\u20131347 (2014).","journal-title":"Science"},{"key":"77669_CR10","doi-asserted-by":"publisher","first-page":"2639","DOI":"10.1016\/j.scib.2023.09.004","volume":"68","author":"X Zhang","year":"2023","unstructured":"Zhang, X. et al. Magnetic topological materials in two-dimensional: theory, material realization and application prospects. Sci. Bull. 68, 2639\u20132657 (2023).","journal-title":"Sci. Bull."},{"key":"77669_CR11","doi-asserted-by":"publisher","first-page":"76","DOI":"10.1126\/science.aan6003","volume":"359","author":"S Wu","year":"2018","unstructured":"Wu, S. et al. Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal. Science 359, 76\u201379 (2018).","journal-title":"Science"},{"key":"77669_CR12","doi-asserted-by":"publisher","first-page":"683","DOI":"10.1038\/nphys4174","volume":"13","author":"S Tang","year":"2017","unstructured":"Tang, S. et al. Quantum spin Hall state in monolayer 1T\u2019-WTe2. Nat. Phys. 13, 683\u2013687 (2017).","journal-title":"Nat. Phys."},{"key":"77669_CR13","doi-asserted-by":"publisher","first-page":"046801","DOI":"10.1103\/PhysRevLett.125.046801","volume":"125","author":"C Zhao","year":"2020","unstructured":"Zhao, C. et al. Strain-tunable semimetal\u2013topological-insulator transition in monolayer 1T\u2019-WTe2. Phys. Rev. Lett. 125, 046801 (2020).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR14","first-page":"011002","volume":"4","author":"H Weng","year":"2014","unstructured":"Weng, H., Dai, X. & Fang, Z. Transition-metal pentatelluride ZrTe5 and HfTe5: A paradigm for large-gap quantum spin Hall insulators. Phys. Rev. X 4, 011002 (2014).","journal-title":"Phys. Rev. X"},{"key":"77669_CR15","doi-asserted-by":"publisher","first-page":"176803","DOI":"10.1103\/PhysRevLett.116.176803","volume":"116","author":"X-B Li","year":"2016","unstructured":"Li, X.-B. et al. Experimental observation of topological edge states at the surface step edge of the topological insulator ZrTe5. Phys. Rev. Lett. 116, 176803 (2016).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR16","doi-asserted-by":"publisher","first-page":"4767","DOI":"10.1021\/nl501907g","volume":"14","author":"J-J Zhou","year":"2014","unstructured":"Zhou, J.-J., Feng, W., Liu, C.-C., Guan, S. & Yao, Y. Large-gap quantum spin Hall insulator in single-layer bismuth monobromide Bi4Br4. Nano Lett. 14, 4767\u20134771 (2014).","journal-title":"Nano Lett."},{"key":"77669_CR17","doi-asserted-by":"publisher","first-page":"1111","DOI":"10.1038\/s41563-022-01304-3","volume":"21","author":"N Shumiya","year":"2022","unstructured":"Shumiya, N. et al. Evidence of a room-temperature quantum spin hall edge state in a higher-order topological insulator. Nat. Mater. 21, 1111\u20131115 (2022).","journal-title":"Nat. Mater."},{"key":"77669_CR18","doi-asserted-by":"publisher","first-page":"076802","DOI":"10.1103\/PhysRevLett.107.076802","volume":"107","author":"C-C Liu","year":"2011","unstructured":"Liu, C.-C., Feng, W. & Yao, Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys. Rev. Lett. 107, 076802 (2011).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR19","doi-asserted-by":"publisher","first-page":"196401","DOI":"10.1103\/PhysRevLett.130.196401","volume":"130","author":"P Bampoulis","year":"2023","unstructured":"Bampoulis, P. et al. Quantum spin Hall states and topological phase transition in germanene. Phys. Rev. Lett. 130, 196401 (2023).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR20","doi-asserted-by":"publisher","first-page":"1020","DOI":"10.1038\/nmat4384","volume":"14","author":"F-F Zhu","year":"2015","unstructured":"Zhu, F.-F. et al. Epitaxial growth of two-dimensional stanene. Nat. Mater. 14, 1020\u20131025 (2015).","journal-title":"Nat. Mater."},{"key":"77669_CR21","doi-asserted-by":"publisher","first-page":"1081","DOI":"10.1038\/s41563-018-0203-5","volume":"17","author":"J Deng","year":"2018","unstructured":"Deng, J. et al. Epitaxial growth of ultraflat stanene with topological band inversion. Nat. Mater. 17, 1081\u20131086 (2018).","journal-title":"Nat. Mater."},{"key":"77669_CR22","doi-asserted-by":"publisher","first-page":"016801","DOI":"10.1103\/PhysRevLett.109.016801","volume":"109","author":"F Yang","year":"2012","unstructured":"Yang, F. et al. Spatial and energy distribution of topological edge states in single Bi(111) bilayer. Phys. Rev. Lett. 109, 016801 (2012).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR23","doi-asserted-by":"publisher","first-page":"287","DOI":"10.1126\/science.aai8142","volume":"357","author":"F Reis","year":"2017","unstructured":"Reis, F. et al. Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material. Science 357, 287\u2013290 (2017).","journal-title":"Science"},{"key":"77669_CR24","doi-asserted-by":"publisher","first-page":"eaba2773","DOI":"10.1126\/sciadv.aba2773","volume":"6","author":"J Gou","year":"2020","unstructured":"Gou, J. et al. The effect of moir\u00e9 superstructures on topological edge states in twisted bismuthene homojunctions. Sci. Adv. 6, eaba2773 (2020).","journal-title":"Sci. Adv."},{"key":"77669_CR25","doi-asserted-by":"publisher","first-page":"1904302","DOI":"10.1002\/adma.201904302","volume":"32","author":"NR Glavin","year":"2020","unstructured":"Glavin, N. R. et al. Emerging applications of elemental 2D materials. Adv. Mater. 32, 1904302 (2020).","journal-title":"Adv. Mater."},{"key":"77669_CR26","doi-asserted-by":"publisher","first-page":"93","DOI":"10.1002\/anie.201206678","volume":"52","author":"R Hoffmann","year":"2013","unstructured":"Hoffmann, R. Small but strong lessons from chemistry for nanoscience. Angew. Chem. Int. Ed. 52, 93\u2013103 (2013).","journal-title":"Angew. Chem. Int. Ed."},{"key":"77669_CR27","doi-asserted-by":"publisher","first-page":"201104","DOI":"10.1103\/PhysRevB.94.201104","volume":"94","author":"Y Ma","year":"2016","unstructured":"Ma, Y., Kou, L., Dai, Y. & Heine, T. Proposed two-dimensional topological insulator in SiTe. Phys. Rev. B 94, 201104 (2016).","journal-title":"Phys. Rev. B"},{"key":"77669_CR28","doi-asserted-by":"publisher","first-page":"1169","DOI":"10.1039\/C5NR06871A","volume":"8","author":"B Sa","year":"2016","unstructured":"Sa, B., Sun, Z. & Wu, B. The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures. Nanoscale 8, 1169\u20131178 (2016).","journal-title":"Nanoscale"},{"key":"77669_CR29","doi-asserted-by":"publisher","first-page":"2208281","DOI":"10.1002\/adfm.202208281","volume":"32","author":"X Huang","year":"2022","unstructured":"Huang, X. et al. Experimental realization of semiconducting monolayer Si2Te2 films. Adv. Funct. Mater. 32, 2208281 (2022).","journal-title":"Adv. Funct. Mater."},{"key":"77669_CR30","doi-asserted-by":"publisher","first-page":"2308007","DOI":"10.1002\/adma.202308007","volume":"36","author":"X Huang","year":"2024","unstructured":"Huang, X. et al. 2D lateral heterojunction arrays with tailored interface band bending. Adv. Mater. 36, 2308007 (2024).","journal-title":"Adv. Mater."},{"key":"77669_CR31","doi-asserted-by":"publisher","first-page":"042002","DOI":"10.1088\/2053-1583\/aacfc1","volume":"5","author":"S Haastrup","year":"2018","unstructured":"Haastrup, S. et al. The computational 2D materials database: high-throughput modeling and discovery of atomically thin crystals. 2D Mater. 5, 042002 (2018).","journal-title":"2D Mater."},{"key":"77669_CR32","doi-asserted-by":"publisher","first-page":"044002","DOI":"10.1088\/2053-1583\/ac1059","volume":"8","author":"MN Gjerding","year":"2021","unstructured":"Gjerding, M. N. et al. Recent progress of the computational 2D materials database (C2DB). 2D Mater. 8, 044002 (2021).","journal-title":"2D Mater."},{"key":"77669_CR33","doi-asserted-by":"publisher","first-page":"127209","DOI":"10.1103\/PhysRevLett.110.127209","volume":"110","author":"YS Oh","year":"2013","unstructured":"Oh, Y. S., Yang, J. J., Horibe, Y. & Cheong, S.-W. Anionic depolymerization transition in IrTe2. Phys. Rev. Lett. 110, 127209 (2013).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR34","doi-asserted-by":"publisher","first-page":"266401","DOI":"10.1103\/PhysRevLett.111.266401","volume":"111","author":"P-J Hsu","year":"2013","unstructured":"Hsu, P.-J. et al. Hysteretic melting transition of a soliton lattice in a commensurate charge modulation. Phys. Rev. Lett. 111, 266401 (2013).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR35","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-020-17253-x","volume":"11","author":"L Kang","year":"2020","unstructured":"Kang, L. et al. Phase-controllable growth of ultrathin 2D magnetic FeTe crystals. Nat. Commun. 11, 3729 (2020).","journal-title":"Nat. Commun."},{"key":"77669_CR36","doi-asserted-by":"publisher","first-page":"2044","DOI":"10.1002\/jcc.21057","volume":"29","author":"J Hafner","year":"2008","unstructured":"Hafner, J. Ab-initio simulations of materials using VASP: Density-functional theory and beyond. J. Comput. Chem. 29, 2044\u20132078 (2008).","journal-title":"J. Comput. Chem."},{"key":"77669_CR37","doi-asserted-by":"publisher","first-page":"1695","DOI":"10.1103\/PhysRevA.31.1695","volume":"31","author":"WG Hoover","year":"1985","unstructured":"Hoover, W. G. Canonical dynamics: Equilibrium phase-space distributions. Phys. Rev. A 31, 1695\u20131697 (1985).","journal-title":"Phys. Rev. A"},{"key":"77669_CR38","doi-asserted-by":"publisher","first-page":"8207","DOI":"10.1063\/1.1564060","volume":"118","author":"J Heyd","year":"2003","unstructured":"Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential.  J. Chem. Phys. 118, 8207\u20138215 (2003).","journal-title":"J. Chem. Phys."},{"key":"77669_CR39","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1016\/j.cpc.2017.09.033","volume":"224","author":"Q Wu","year":"2018","unstructured":"Wu, Q. et al. WannierTools: an open-source software package for novel topological materials. Comput. Phys. Commun. 224, 405\u2013416 (2018).","journal-title":"Comput. Phys. Commun."},{"key":"77669_CR40","doi-asserted-by":"publisher","first-page":"216403","DOI":"10.1103\/PhysRevLett.96.216403","volume":"96","author":"F Giustino","year":"2006","unstructured":"Giustino, F. & Pasquarello, A. Mixed Wannier-Bloch functions for electrons and phonons in periodic systems. Phys. Rev. Lett. 96, 216403 (2006).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR41","doi-asserted-by":"publisher","first-page":"4619","DOI":"10.1021\/acs.nanolett.7b01029","volume":"17","author":"X Huang","year":"2017","unstructured":"Huang, X. et al. Epitaxial growth and band structure of Te film on graphene. Nano Lett. 17, 4619\u20134623 (2017).","journal-title":"Nano Lett."},{"key":"77669_CR42","doi-asserted-by":"publisher","first-page":"664","DOI":"10.1038\/nphys3048","volume":"10","author":"IK Drozdov","year":"2014","unstructured":"Drozdov, I. K. et al. One-dimensional topological edge states of bismuth bilayers. Nat. Phys. 10, 664\u2013669 (2014).","journal-title":"Nat. Phys."},{"key":"77669_CR43","doi-asserted-by":"publisher","first-page":"338","DOI":"10.1038\/nphys3264","volume":"11","author":"C Pauly","year":"2015","unstructured":"Pauly, C. et al. Subnanometre-wide electron channels protected by topology. Nat. Phys. 11, 338\u2013343 (2015).","journal-title":"Nat. Phys."},{"key":"77669_CR44","doi-asserted-by":"publisher","first-page":"206802","DOI":"10.1103\/PhysRevLett.128.206802","volume":"128","author":"C Zhao","year":"2022","unstructured":"Zhao, C. et al. Coexistence of robust edge states and superconductivity in few-layer stanene. Phys. Rev. Lett. 128, 206802 (2022).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR45","doi-asserted-by":"publisher","first-page":"1269","DOI":"10.1126\/science.aah6233","volume":"354","author":"P Sessi","year":"2016","unstructured":"Sessi, P. et al. Robust spin-polarized midgap states at step edges of topological crystalline insulators. Science 354, 1269\u20131273 (2016).","journal-title":"Science"},{"key":"77669_CR46","doi-asserted-by":"publisher","first-page":"236402","DOI":"10.1103\/PhysRevLett.126.236402","volume":"126","author":"J Jung","year":"2021","unstructured":"Jung, J. et al. Systematic investigation of the coupling between one-dimensional edge states of a topological crystalline insulator. Phys. Rev. Lett. 126, 236402 (2021).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR47","doi-asserted-by":"publisher","first-page":"1758","DOI":"10.1103\/PhysRevB.59.1758","volume":"59","author":"G Kresse","year":"1999","unstructured":"Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758\u20131775 (1999).","journal-title":"Phys. Rev. B"},{"key":"77669_CR48","doi-asserted-by":"publisher","first-page":"17953","DOI":"10.1103\/PhysRevB.50.17953","volume":"50","author":"PE Bl\u00f6chl","year":"1994","unstructured":"Bl\u00f6chl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953\u201317979 (1994).","journal-title":"Phys. Rev. B"},{"key":"77669_CR49","doi-asserted-by":"publisher","first-page":"110064","DOI":"10.1016\/j.commatsci.2020.110064","volume":"186","author":"G Wang","year":"2021","unstructured":"Wang, G. et al. Alkemie: An intelligent computational platform for accelerating materials discovery and design. Comput. Mater. Sci. 186, 110064 (2021).","journal-title":"Comput. Mater. Sci."},{"key":"77669_CR50","doi-asserted-by":"publisher","first-page":"1396","DOI":"10.1103\/PhysRevLett.78.1396","volume":"78","author":"JP Perdew","year":"1997","unstructured":"Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 78, 1396\u20131396 (1997).","journal-title":"Phys. Rev. Lett."},{"key":"77669_CR51","doi-asserted-by":"publisher","first-page":"5188","DOI":"10.1103\/PhysRevB.13.5188","volume":"13","author":"HJ Monkhorst","year":"1976","unstructured":"Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188\u20135192 (1976).","journal-title":"Phys. Rev. B"},{"key":"77669_CR52","doi-asserted-by":"publisher","first-page":"154104","DOI":"10.1063\/1.3382344","volume":"132","author":"S Grimme","year":"2010","unstructured":"Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements h-pu.  J. Chem. Phys. 132, 154104 (2010).","journal-title":"J. Chem. Phys."},{"key":"77669_CR53","doi-asserted-by":"publisher","first-page":"515","DOI":"10.1103\/RevModPhys.73.515","volume":"73","author":"S Baroni","year":"2001","unstructured":"Baroni, S., de Gironcoli, S., Dal Corso, A. & Giannozzi, P. Phonons and related crystal properties from density-functional perturbation theory. Rev. Mod. Phys. 73, 515\u2013562 (2001).","journal-title":"Rev. Mod. Phys."},{"key":"77669_CR54","doi-asserted-by":"publisher","first-page":"013705","DOI":"10.1063\/1.2432410","volume":"78","author":"I Horcas","year":"2007","unstructured":"Horcas, I. et al. WSxM: A software for scanning probe microscopy and a tool for nanotechnology. Rev. Sci. Instrum. 78, 013705 (2007).","journal-title":"Rev. Sci. Instrum."}],"container-title":["Nature Communications"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41467-026-77669-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41467-026-77669-9","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41467-026-77669-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T09:03:21Z","timestamp":1789117401000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41467-026-77669-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,11]]},"references-count":54,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2026,12]]}},"alternative-id":["77669"],"URL":"https:\/\/doi.org\/10.1038\/s41467-026-77669-9","relation":{},"ISSN":["2041-1723"],"issn-type":[{"value":"2041-1723","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,11]]},"assertion":[{"value":"17 November 2025","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"31 August 2026","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"11 September 2026","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Ethics"}}],"article-number":"9741"}}