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At a given electric field <jats:italic>E<\/jats:italic>, <jats:italic>\u03b7<\/jats:italic> is a function of the remnant polarization (<jats:inline-formula><jats:alternatives><jats:tex-math>$$P_0^f$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msubsup>\n                    <mml:mrow>\n                      <mml:mi>P<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mn>0<\/mml:mn>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>f<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msubsup>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>) and the small-field relative dielectric permittivity (<jats:inline-formula><jats:alternatives><jats:tex-math>$$\\chi _0^f$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msubsup>\n                    <mml:mrow>\n                      <mml:mi>\u03c7<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mn>0<\/mml:mn>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>f<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msubsup>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>), which are commonly measured material properties. After a survey of materials, a large <jats:italic>\u03b7<\/jats:italic>~80% is predicted to be achievable in a (001)-oriented tetragonal (K<jats:sub>0.5<\/jats:sub>,Na<jats:sub>0.5<\/jats:sub>)NbO<jats:sub>3<\/jats:sub> film. This strain-stabilized tetragonal phase is verified by density functional theory (DFT) calculations. (K<jats:sub>0.5<\/jats:sub>,Na<jats:sub>0.5<\/jats:sub>)NbO<jats:sub>3<\/jats:sub> films based on this design were successfully prepared via a sputtering deposition process on SrRuO<jats:sub>3<\/jats:sub>-buffered (100)SrTiO<jats:sub>3<\/jats:sub> substrates. The resulted epitaxial films showed a sizable <jats:inline-formula><jats:alternatives><jats:tex-math>$$P_0^f$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msubsup>\n                    <mml:mrow>\n                      <mml:mi>P<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mn>0<\/mml:mn>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>f<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msubsup>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> (~0.21C m<jats:sup>\u22122<\/jats:sup>) and a large <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\chi _0^f$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msubsup>\n                    <mml:mrow>\n                      <mml:mi>\u03c7<\/mml:mi>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mn>0<\/mml:mn>\n                    <\/mml:mrow>\n                    <mml:mrow>\n                      <mml:mi>f<\/mml:mi>\n                    <\/mml:mrow>\n                  <\/mml:msubsup>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> (~830\u2013860), as well as a large <jats:italic>\u03b7<\/jats:italic> close to the theoretical value. The measured dielectric tunabilities as functions of <jats:italic>E<\/jats:italic> are well described by the theoretical <jats:italic>\u03b7<\/jats:italic>(<jats:italic>E<\/jats:italic>) curves, validating our integrated approach rooted in a theoretical understanding.<\/jats:p>","DOI":"10.1038\/s41524-021-00528-2","type":"journal-article","created":{"date-parts":[[2021,5,6]],"date-time":"2021-05-06T10:06:43Z","timestamp":1620295603000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":39,"title":["Achieving a high dielectric tunability in strain-engineered tetragonal K0.5Na0.5NbO3 films"],"prefix":"10.1038","volume":"7","author":[{"given":"Lanxia","family":"Hao","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5828-9527","authenticated-orcid":false,"given":"Yali","family":"Yang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6508-0801","authenticated-orcid":false,"given":"Yu","family":"Huan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongbo","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu-Yao","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yingying","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Yan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7317-3867","authenticated-orcid":false,"given":"Wei","family":"Ren","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2446-2958","authenticated-orcid":false,"given":"Jun","family":"Ouyang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2021,5,6]]},"reference":[{"key":"528_CR1","doi-asserted-by":"publisher","first-page":"9218","DOI":"10.1063\/1.1569392","volume":"93","author":"MW Cole","year":"2003","unstructured":"Cole, M. 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