{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T10:02:01Z","timestamp":1789639321411,"version":"4.0.0"},"reference-count":150,"publisher":"Springer Science and Business Media LLC","license":[{"start":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T00:00:00Z","timestamp":1789603200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T00:00:00Z","timestamp":1789603200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nat. Nanotechnol."],"DOI":"10.1038\/s41565-026-02274-2","type":"journal-article","created":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T09:03:38Z","timestamp":1789635818000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Two-dimensional materials for advanced back-end-of-line and wafer backside technologies"],"prefix":"10.1038","author":[{"given":"Zhengpeng","family":"Wang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2234-8297","authenticated-orcid":false,"given":"Jiechen","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0487-412X","authenticated-orcid":false,"given":"Yue","family":"Cao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7973-2324","authenticated-orcid":false,"given":"Hang-Ming","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yan","family":"Zeng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sishuo","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-3771-8150","authenticated-orcid":false,"given":"Songqi","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0442-3057","authenticated-orcid":false,"given":"Hehe","family":"Gong","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6350-4861","authenticated-orcid":false,"given":"Yuhao","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-5646-3958","authenticated-orcid":false,"given":"Pingfan","family":"Wu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Liang","family":"Peng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5121-3362","authenticated-orcid":false,"given":"Han","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,9,17]]},"reference":[{"key":"2274_CR1","doi-asserted-by":"crossref","unstructured":"Lienig, J. & Scheible, J. Technology Know-How: from Silicon to Devices (Springer, 2020).","DOI":"10.1007\/978-3-030-39284-0_2"},{"key":"2274_CR2","doi-asserted-by":"publisher","DOI":"10.1126\/science.adk6189","volume":"386","author":"JS Kim","year":"2024","unstructured":"Kim, J. S. et al. Addressing interconnect challenges for enhanced computing performance. Science 386, eadk6189 (2024).","journal-title":"Science"},{"key":"2274_CR3","doi-asserted-by":"publisher","DOI":"10.1063\/5.0013737","volume":"128","author":"C-L Lo","year":"2020","unstructured":"Lo, C.-L. et al. Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling. J. Appl. Phys. 128, 080903 (2020).","journal-title":"J. Appl. Phys."},{"key":"2274_CR4","doi-asserted-by":"publisher","DOI":"10.1002\/macp.202400338","volume":"226","author":"Q Wang","year":"2024","unstructured":"Wang, Q. et al. Research progress and applications of benzocyclobutene-based functional polymers. Macromol. Chem. Phys. 226, 2400338 (2024).","journal-title":"Macromol. Chem. Phys."},{"key":"2274_CR5","doi-asserted-by":"publisher","unstructured":"Veloso, A. et al. Backside power delivery: game changer and key enabler of advanced logic scaling and new STCO opportunities. In Proc. 2023 International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413867 (IEEE, 2023).","DOI":"10.1109\/IEDM45741.2023.10413867"},{"key":"2274_CR6","doi-asserted-by":"publisher","first-page":"3970","DOI":"10.1109\/TED.2023.3279807","volume":"70","author":"G Mirabelli","year":"2023","unstructured":"Mirabelli, G. et al. Increasing functionality of wafer\u2019s backside: analysis of Si and WS2 backside power-switch. IEEE Trans. Electron Devices 70, 3970\u20133974 (2023). This paper proposed that WS2 backside power switches can outperform conventional silicon frontside\/backside power switches in performance and power efficiency under simulation.","journal-title":"IEEE Trans. Electron Devices"},{"key":"2274_CR7","doi-asserted-by":"publisher","unstructured":"Han, L. K. et al. A modular 0.13 \/spl mu\/m bulk CMOS technology for high performance and low power applications. In Proc. 2000 Symposium on VLSI Technology. Digest of Technical Papers 12\u201313 https:\/\/doi.org\/10.1109\/VLSIT.2000.852749 (IEEE, 2000).","DOI":"10.1109\/VLSIT.2000.852749"},{"key":"2274_CR8","doi-asserted-by":"publisher","first-page":"2027","DOI":"10.1360\/SSC-2023-0146","volume":"53","author":"S Zhang","year":"2023","unstructured":"Zhang, S. et al. Revolution of next-generation interconnect materials and key processes for advanced chips in post-Moore era. Sci. Sin. Chim. 53, 2027\u20132067 (2023).","journal-title":"Sci. Sin. Chim."},{"key":"2274_CR9","doi-asserted-by":"publisher","first-page":"26119","DOI":"10.1021\/acsami.6b07181","volume":"8","author":"LG Wen","year":"2016","unstructured":"Wen, L. G. et al. Atomic layer deposition of ruthenium with TiN interface for sub-10\u2009nm advanced interconnects beyond copper. ACS Appl. Mater. Interfaces 8, 26119\u201326125 (2016).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2274_CR10","doi-asserted-by":"publisher","unstructured":"Wang, N. C. et al. Replacing copper interconnects with graphene at a 7-nm node. In Proc. 2017 IEEE International Interconnect Technology Conference (IITC) 1\u20133 https:\/\/doi.org\/10.1109\/IITC-AMC.2017.7968949 (IEEE, 2017).","DOI":"10.1109\/IITC-AMC.2017.7968949"},{"key":"2274_CR11","doi-asserted-by":"publisher","first-page":"1482","DOI":"10.1021\/acs.nanolett.6b04516","volume":"17","author":"J Jiang","year":"2017","unstructured":"Jiang, J. et al. Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects. Nano Lett. 17, 1482\u20131488 (2017).","journal-title":"Nano Lett."},{"key":"2274_CR12","doi-asserted-by":"publisher","unstructured":"Jiang, J., Chu, J. H. & Banerjee, K. CMOS-compatible doped-multilayer-graphene interconnects for next-generation VLSI. In Proc. 2018 IEEE International Electron Devices Meeting (IEDM) 34.35.31\u201334.35.34 https:\/\/doi.org\/10.1109\/IEDM.2018.8614535 (IEEE, 2018).","DOI":"10.1109\/IEDM.2018.8614535"},{"key":"2274_CR13","doi-asserted-by":"publisher","first-page":"878","DOI":"10.1109\/JEDS.2019.2925150","volume":"7","author":"J Jiang","year":"2019","unstructured":"Jiang, J., Parto, K., Cao, W. & Banerjee, K. Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges. IEEE J. Electron Devices Soc. 7, 878\u2013887 (2019).","journal-title":"IEEE J. Electron Devices Soc."},{"key":"2274_CR14","doi-asserted-by":"publisher","unstructured":"Shin, K. W. et al. Graphene as new conductors in back-end-of-line: non-catalytic growth, doping, integration and reliability. In Proc. 2024 IEEE International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50854.2024.10872993 (IEEE, 2024). This paper demonstrated non-catalytic growth of multilayer graphene, successful conformal filling of 3D trenches and validation of BEOL wiring based on non-catalytically grown graphene.","DOI":"10.1109\/IEDM50854.2024.10872993"},{"key":"2274_CR15","doi-asserted-by":"publisher","unstructured":"Li, S. W. et al. Intercalated graphene as next generation back-end-of-line conductors. In Proc. 2023 International Electron Devices Meeting (IEDM) i\u2013iv https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413750 (IEEE, 2023).This study proposes a symbiotic graphene intercalation and edge-contact architecture, achieving resistivity superior to that of copper below 150\u2009\u00c5 and markedly reduced contact resistance for future BEOL interconnects.","DOI":"10.1109\/IEDM45741.2023.10413750"},{"key":"2274_CR16","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.5.056002","volume":"5","author":"K Sankaran","year":"2021","unstructured":"Sankaran, K., Moors, K., T\u0151kei, Z., Adelmann, C. & Pourtois, G. Ab initio screening of metallic MAX ceramics for advanced interconnect applications. Phys. Rev. Mater. 5, 056002 (2021).","journal-title":"Phys. Rev. Mater."},{"key":"2274_CR17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.80.113102","volume":"80","author":"HM Guo","year":"2009","unstructured":"Guo, H. M. & Franz, M. Topological insulator on the kagome lattice. Phys. Rev. B 80, 113102 (2009).","journal-title":"Phys. Rev. B"},{"key":"2274_CR18","doi-asserted-by":"publisher","DOI":"10.1002\/sstr.202400638","volume":"6","author":"Y Li","year":"2025","unstructured":"Li, Y. et al. PtCoO2 for scaled interconnects. Small Struct. 6, 2400638 (2025).","journal-title":"Small Struct."},{"key":"2274_CR19","doi-asserted-by":"publisher","first-page":"482","DOI":"10.1038\/s41563-019-0320-9","volume":"18","author":"C Zhang","year":"2019","unstructured":"Zhang, C. et al. Ultrahigh conductivity in Weyl semimetal NbAs nanobelts. Nat. Mater. 18, 482\u2013488 (2019).","journal-title":"Nat. Mater."},{"key":"2274_CR20","doi-asserted-by":"publisher","first-page":"1639","DOI":"10.1016\/j.matt.2021.02.016","volume":"4","author":"X Li","year":"2021","unstructured":"Li, X. et al. Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder. Matter 4, 1639\u20131653 (2021).","journal-title":"Matter"},{"key":"2274_CR21","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202208965","volume":"35","author":"HJ Han","year":"2023","unstructured":"Han, H. J. et al. Topological metal MoP nanowire for interconnect. Adv. Mater. 35, e2208965 (2023).","journal-title":"Adv. Mater."},{"key":"2274_CR22","doi-asserted-by":"publisher","DOI":"10.1063\/5.0200403","volume":"124","author":"NA Lanzillo","year":"2024","unstructured":"Lanzillo, N. A., Bajpai, U. & Chen, C.-T. Topological semimetal interface resistivity scaling for vertical interconnect applications. Appl. Phys. Lett. 124, 181603 (2024).","journal-title":"Appl. Phys. Lett."},{"key":"2274_CR23","doi-asserted-by":"publisher","first-page":"62","DOI":"10.1126\/science.adq7096","volume":"387","author":"AI Khan","year":"2025","unstructured":"Khan, A. I. et al. Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal. Science 387, 62\u201367 (2025).","journal-title":"Science"},{"key":"2274_CR24","doi-asserted-by":"publisher","first-page":"4924","DOI":"10.1021\/acsaelm.5c00367","volume":"7","author":"S Ahmed","year":"2025","unstructured":"Ahmed, S., Mim, S. H. & Alam, M. K. Transition metal dichalcogenides as nanoscale 2D interconnects: performance analysis of MoTe2, TaS2, WTe2, NbSe2, and TaSe2 nanoribbons. ACS Appl. Electron. Mater. 7, 4924\u20134937 (2025).","journal-title":"ACS Appl. Electron. Mater."},{"key":"2274_CR25","doi-asserted-by":"publisher","first-page":"815","DOI":"10.1109\/LED.2019.2908426","volume":"40","author":"L Li","year":"2019","unstructured":"Li, L., Zhu, Z., Yoon, A. & Wong, H. S. P. In-situ grown graphene enabled copper interconnects with improved electromigration reliability. IEEE Electron Device Lett. 40, 815\u2013817 (2019).","journal-title":"IEEE Electron Device Lett."},{"key":"2274_CR26","doi-asserted-by":"publisher","unstructured":"Nogami, T. et al. Electromigration and line R of graphene capped Cu dual damascene interconnect. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 22.22.21\u201322.22.24 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720525 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720525"},{"key":"2274_CR27","doi-asserted-by":"publisher","first-page":"2588","DOI":"10.1109\/TED.2023.3258403","volume":"70","author":"K Kim","year":"2023","unstructured":"Kim, K. et al. Ultralow-k amorphous boron nitride film for copper interconnect capping layer. IEEE Trans. Electron Devices 70, 2588\u20132593 (2023).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2274_CR28","doi-asserted-by":"publisher","unstructured":"Li, L. et al. BEOL compatible graphene\/Cu with improved electromigration lifetime for future interconnects. In Proc. 2016 IEEE International Electron Devices Meeting (IEDM) 9.5.1\u20139.5.4 https:\/\/doi.org\/10.1109\/IEDM.2016.7838383 (IEEE, 2016).","DOI":"10.1109\/IEDM.2016.7838383"},{"key":"2274_CR29","doi-asserted-by":"publisher","first-page":"1827","DOI":"10.1039\/C6NR07637H","volume":"9","author":"R Mehta","year":"2017","unstructured":"Mehta, R., Chugh, S. & Chen, Z. Transfer-free multi-layer graphene as a diffusion barrier. Nanoscale 9, 1827\u20131833 (2017).","journal-title":"Nanoscale"},{"key":"2274_CR30","doi-asserted-by":"publisher","DOI":"10.1038\/s41699-017-0044-0","volume":"1","author":"C-L Lo","year":"2017","unstructured":"Lo, C.-L. et al. Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology. npj 2D Mater. Appl. 1, 42 (2017).","journal-title":"npj 2D Mater. Appl."},{"key":"2274_CR31","doi-asserted-by":"publisher","first-page":"47845","DOI":"10.1021\/acsami.3c12267","volume":"15","author":"CY Kuo","year":"2023","unstructured":"Kuo, C. Y. et al. MoS2 as an effective Cu diffusion barrier with a back-end compatible process. ACS Appl. Mater. Interfaces 15, 47845\u201347854 (2023).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2274_CR32","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201902397","volume":"31","author":"CL Lo","year":"2019","unstructured":"Lo, C. L. et al. Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature. Adv. Mater. 31, e1902397 (2019).","journal-title":"Adv. Mater."},{"key":"2274_CR33","doi-asserted-by":"publisher","first-page":"379","DOI":"10.1038\/s41928-026-01592-6","volume":"9","author":"MJ Mangattuchali","year":"2026","unstructured":"Mangattuchali, M. J. et al. Low-temperature wafer-scale growth of ultrathin tungsten disulfide for bifunctional interconnect barriers and liners. Nat. Electron. 9, 379\u2013388 (2026). This study demonstrated low-temperature wafer-scale growth of ultrathin conformal WS2 that serves as a bifunctional liner and diffusion barrier for future BEOL Cu interconnects.","journal-title":"Nat. Electron."},{"key":"2274_CR34","doi-asserted-by":"publisher","unstructured":"Naylor, C. H. et al. 2D materials in the BEOL. In Proc. 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 1\u20132 https:\/\/doi.org\/10.23919\/VLSITechnologyandCir57934.2023.10185307 (IEEE, 2023).","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185307"},{"key":"2274_CR35","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1016\/S1369-7021(06)71387-6","volume":"9","author":"BD Hatton","year":"2006","unstructured":"Hatton, B. D. et al. Materials chemistry for low-k materials. Mater. Today 9, 22\u201331 (2006).","journal-title":"Mater. Today"},{"key":"2274_CR36","doi-asserted-by":"publisher","first-page":"56","DOI":"10.1021\/cr9002819","volume":"110","author":"W Volksen","year":"2010","unstructured":"Volksen, W., Miller, R. D. & Dubois, G. Low dielectric constant materials. Chem. Rev. 110, 56\u2013110 (2010).","journal-title":"Chem. Rev."},{"key":"2274_CR37","doi-asserted-by":"publisher","first-page":"6005","DOI":"10.1063\/1.1513882","volume":"92","author":"BC Daly","year":"2002","unstructured":"Daly, B. C. et al. Optical pump and probe measurement of the thermal conductivity of low-k dielectric thin films. J. Appl. Phys. 92, 6005\u20136009 (2002).","journal-title":"J. Appl. Phys."},{"key":"2274_CR38","doi-asserted-by":"publisher","first-page":"746","DOI":"10.1007\/s11664-013-2949-5","volume":"43","author":"MT Alam","year":"2013","unstructured":"Alam, M. T., Pulavarthy, R. A., Bielefeld, J., King, S. W. & Haque, M. A. Thermal conductivity measurement of low-k dielectric films: effect of porosity and density. J. Electron. Mater. 43, 746\u2013754 (2013).","journal-title":"J. Electron. Mater."},{"key":"2274_CR39","doi-asserted-by":"publisher","first-page":"280","DOI":"10.1016\/S0167-9317(03)00417-9","volume":"70","author":"A Delan","year":"2003","unstructured":"Delan, A., Rennau, M., Schulz, S. E. & Gessner, T. Thermal conductivity of ultra low-k dielectrics. Microelectron. Eng. 70, 280\u2013284 (2003).","journal-title":"Microelectron. Eng."},{"key":"2274_CR40","doi-asserted-by":"publisher","first-page":"1142","DOI":"10.1038\/s41563-021-00934-3","volume":"20","author":"AM Evans","year":"2021","unstructured":"Evans, A. M. et al. Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks. Nat. Mater. 20, 1142\u20131148 (2021).","journal-title":"Nat. Mater."},{"key":"2274_CR41","doi-asserted-by":"publisher","first-page":"511","DOI":"10.1038\/s41586-020-2375-9","volume":"582","author":"S Hong","year":"2020","unstructured":"Hong, S. et al. Ultralow-dielectric-constant amorphous boron nitride. Nature 582, 511\u2013514 (2020). This paper reports BEOL-compatible ultralow-k a-BN with robust dielectric and diffusion-barrier performance for advanced interconnect filling materials.","journal-title":"Nature"},{"key":"2274_CR42","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202200022","volume":"7","author":"CM Lin","year":"2022","unstructured":"Lin, C. M. et al. Ultralow-k amorphous boron nitride based on hexagonal ring stacking framework for 300\u2009mm silicon technology platform. Adv. Mater. Technol. 7, 2200022 (2022).","journal-title":"Adv. Mater. Technol."},{"key":"2274_CR43","doi-asserted-by":"publisher","unstructured":"Kim, T. et al. Thermal mitigation strategy for 3D stacked devices: leveraging dense BN low-k dielectrics with improved thermal conductivity. In Proc. 2025 International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50572.2025.11353671 (IEEE, 2025).","DOI":"10.1109\/IEDM50572.2025.11353671"},{"key":"2274_CR44","doi-asserted-by":"publisher","DOI":"10.1063\/5.0089967","volume":"120","author":"Y-T Zhang","year":"2022","unstructured":"Zhang, Y.-T., Wang, Y.-P., Zhang, Y.-Y., Du, S. & Pantelides, S. T. Thermal transport of monolayer amorphous carbon and boron nitride. Appl. Phys. Lett. 120, 222201 (2022).","journal-title":"Appl. Phys. Lett."},{"key":"2274_CR45","doi-asserted-by":"publisher","first-page":"361","DOI":"10.1039\/D2NH00520D","volume":"8","author":"O Kaya","year":"2023","unstructured":"Kaya, O., Colombo, L., Antidormi, A., Lanza, M. & Roche, S. Revealing the improved stability of amorphous boron-nitride upon carbon doping. Nanoscale Horiz. 8, 361\u2013367 (2023).","journal-title":"Nanoscale Horiz."},{"key":"2274_CR46","doi-asserted-by":"publisher","first-page":"565","DOI":"10.1007\/s10934-019-00836-5","volume":"27","author":"H Harikrishna","year":"2019","unstructured":"Harikrishna, H. et al. Thermal conductivity\u2013structure\u2013processing relationships for amorphous nano-porous organo-silicate thin films. J. Porous Mater. 27, 565\u2013586 (2019).","journal-title":"J. Porous Mater."},{"key":"2274_CR47","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.5.035604","volume":"5","author":"JL Braun","year":"2021","unstructured":"Braun, J. L. et al. Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a-SiNx:H). Phys. Rev. Mater. 5, 035604 (2021).","journal-title":"Phys. Rev. Mater."},{"key":"2274_CR48","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202402662","volume":"35","author":"S Vaziri","year":"2024","unstructured":"Vaziri, S. et al. AlN: an engineered thermal material for 3D integrated circuits. Adv. Funct. Mater. 35, 2402662 (2024).","journal-title":"Adv. Funct. Mater."},{"key":"2274_CR49","doi-asserted-by":"publisher","unstructured":"Takagi, T. et al. High thermal conductivity AlN films for advanced 3D chiplets. In Proc. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 1\u20132 https:\/\/doi.org\/10.1109\/VLSITechnologyandCir46783.2024.10631317 (IEEE, 2024).","DOI":"10.1109\/VLSITechnologyandCir46783.2024.10631317"},{"key":"2274_CR50","doi-asserted-by":"publisher","first-page":"3485","DOI":"10.1007\/s10853-023-08232-w","volume":"58","author":"C Zhang","year":"2023","unstructured":"Zhang, C., Vispute, R. D., Fu, K. & Ni, C. A review of thermal properties of CVD diamond films. J. Mater. Sci. 58, 3485\u20133507 (2023).","journal-title":"J. Mater. Sci."},{"key":"2274_CR51","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.4.044602","volume":"4","author":"Z Cheng","year":"2020","unstructured":"Cheng, Z. et al. Experimental observation of high intrinsic thermal conductivity of AlN. Phys. Rev. Mater. 4, 044602 (2020).","journal-title":"Phys. Rev. Mater."},{"key":"2274_CR52","doi-asserted-by":"publisher","first-page":"1232","DOI":"10.1007\/s12274-014-0486-z","volume":"7","author":"H Zhou","year":"2014","unstructured":"Zhou, H. et al. High thermal conductivity of suspended few-layer hexagonal boron nitride sheets. Nano Res. 7, 1232\u20131240 (2014).","journal-title":"Nano Res."},{"key":"2274_CR53","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1016\/j.diamond.2015.12.001","volume":"62","author":"AP Bolshakov","year":"2016","unstructured":"Bolshakov, A. P. et al. High-rate growth of single crystal diamond in microwave plasma in CH4\/H2 and CH4\/H2\/Ar gas mixtures in presence of intensive soot formation. Diam. Relat. Mater. 62, 49\u201357 (2016).","journal-title":"Diam. Relat. Mater."},{"key":"2274_CR54","doi-asserted-by":"publisher","first-page":"1645","DOI":"10.1021\/nl9041966","volume":"10","author":"W Cai","year":"2010","unstructured":"Cai, W. et al. Thermal transport in suspended and supported monolayer graphene grown by chemical vapor deposition. Nano Lett. 10, 1645\u20131651 (2010).","journal-title":"Nano Lett."},{"key":"2274_CR55","doi-asserted-by":"publisher","DOI":"10.1016\/j.mtphys.2021.100462","volume":"20","author":"Z Cheng","year":"2021","unstructured":"Cheng, Z. et al. Quasi-ballistic thermal conduction in 6H-SiC. Mater. Today Phys. 20, 100462 (2021).","journal-title":"Mater. Today Phys."},{"key":"2274_CR56","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-022-34943-w","volume":"13","author":"Z Cheng","year":"2022","unstructured":"Cheng, Z. et al. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nat. Commun. 13, 7201 (2022).","journal-title":"Nat. Commun."},{"key":"2274_CR57","doi-asserted-by":"publisher","DOI":"10.1038\/s41699-022-00327-3","volume":"6","author":"X Huang","year":"2022","unstructured":"Huang, X., Liu, C. & Zhou, P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater. Appl. 6, 51 (2022).","journal-title":"npj 2D Mater. Appl."},{"key":"2274_CR58","unstructured":"International Roadmap for Devices and Systems https:\/\/irds.ieee.org\/editions\/2024 (IEEE, accessed 17 May 2025)."},{"key":"2274_CR59","unstructured":"Introducing 2D-Material Based Devices in the Logic Scaling Roadmap https:\/\/www.imec-int.com\/en\/articles\/introducing-2d-material-based-devices-logic-scaling-roadmap (imec, 2025)."},{"key":"2274_CR60","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202106886","volume":"34","author":"S Wang","year":"2022","unstructured":"Wang, S., Liu, X. & Zhou, P. The road for 2D semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).","journal-title":"Adv. Mater."},{"key":"2274_CR61","doi-asserted-by":"publisher","first-page":"1246","DOI":"10.1016\/j.sse.2009.09.017","volume":"53","author":"M Schmidt","year":"2009","unstructured":"Schmidt, M. et al. Mobility extraction in SOI MOSFETs with sub 1\u2009nm body thickness. Solid-State Electron. 53, 1246\u20131251 (2009).","journal-title":"Solid-State Electron."},{"key":"2274_CR62","doi-asserted-by":"publisher","unstructured":"Yu, X., Kang, J., Takenaka, M. & Takagi, S. Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2\u2009nm. In Proc. 2015 IEEE International Electron Devices Meeting (IEDM) 2.2.1\u20132.2.4 https:\/\/doi.org\/10.1109\/IEDM.2015.7409611 (IEEE, 2015).","DOI":"10.1109\/IEDM.2015.7409611"},{"key":"2274_CR63","doi-asserted-by":"publisher","first-page":"547","DOI":"10.1002\/adma.201503033","volume":"28","author":"Z Yu","year":"2016","unstructured":"Yu, Z. et al. Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening. Adv. Mater. 28, 547\u2013552 (2016).","journal-title":"Adv. Mater."},{"key":"2274_CR64","doi-asserted-by":"publisher","first-page":"534","DOI":"10.1038\/nnano.2015.70","volume":"10","author":"X Cui","year":"2015","unstructured":"Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534\u2013540 (2015).","journal-title":"Nat. Nanotechnol."},{"key":"2274_CR65","doi-asserted-by":"publisher","first-page":"7180","DOI":"10.1021\/nn5021538","volume":"8","author":"A Allain","year":"2014","unstructured":"Allain, A. & Kis, A. Electron and hole mobilities in single-layer WSe2. ACS Nano 8, 7180\u20137185 (2014).","journal-title":"ACS Nano"},{"key":"2274_CR66","doi-asserted-by":"publisher","DOI":"10.1063\/1.4967188","volume":"109","author":"A Alharbi","year":"2016","unstructured":"Alharbi, A. & Shahrjerdi, D. Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition. Appl. Phys. Lett. 109, 193502 (2016).","journal-title":"Appl. Phys. Lett."},{"key":"2274_CR67","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201802581","volume":"28","author":"M Zhong","year":"2018","unstructured":"Zhong, M. et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv. Funct. Mater. 28, 1802581 (2018).","journal-title":"Adv. Funct. Mater."},{"key":"2274_CR68","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.80.235402","volume":"80","author":"W Zhu","year":"2009","unstructured":"Zhu, W., Perebeinos, V., Freitag, M. & Avouris, P. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene. Phys. Rev. B 80, 235402 (2009).","journal-title":"Phys. Rev. B"},{"key":"2274_CR69","doi-asserted-by":"publisher","first-page":"1065","DOI":"10.1021\/acs.nanolett.6b04576","volume":"17","author":"K Xu","year":"2017","unstructured":"Xu, K. et al. Sub-10\u2009nm nanopattern architecture for 2D material field-effect transistors. Nano Lett. 17, 1065\u20131070 (2017).","journal-title":"Nano Lett."},{"key":"2274_CR70","doi-asserted-by":"publisher","first-page":"14942","DOI":"10.1021\/acsnano.2c05902","volume":"16","author":"Z Sun","year":"2022","unstructured":"Sun, Z. et al. Statistical assessment of high-performance scaled double-gate transistors from monolayer WS2. ACS Nano 16, 14942\u201314950 (2022).","journal-title":"ACS Nano"},{"key":"2274_CR71","doi-asserted-by":"publisher","first-page":"6664","DOI":"10.1021\/acs.nanolett.3c01866","volume":"23","author":"Z Xie","year":"2023","unstructured":"Xie, Z. et al. Ultimate limit in optoelectronic performances of monolayer WSe2 sloping-channel transistors. Nano Lett. 23, 6664\u20136672 (2023).","journal-title":"Nano Lett."},{"key":"2274_CR72","doi-asserted-by":"publisher","unstructured":"Brien, K. P. O. et al. Advancing 2D monolayer CMOS through contact, channel and interface engineering. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 7.1.1\u20137.1.4 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720651 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720651"},{"key":"2274_CR73","doi-asserted-by":"publisher","first-page":"271","DOI":"10.1126\/science.aaj1628","volume":"355","author":"C Qiu","year":"2017","unstructured":"Qiu, C. et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355, 271\u2013276 (2017).","journal-title":"Science"},{"key":"2274_CR74","doi-asserted-by":"publisher","first-page":"1369","DOI":"10.1126\/science.aan2476","volume":"356","author":"Q Cao","year":"2017","unstructured":"Cao, Q., Tersoff, J., Farmer, D. B., Zhu, Y. & Han, S.-J. Carbon nanotube transistors scaled to a 40-nanometer footprint. Science 356, 1369\u20131372 (2017).","journal-title":"Science"},{"key":"2274_CR75","doi-asserted-by":"publisher","first-page":"858","DOI":"10.1038\/nnano.2010.220","volume":"5","author":"AD Franklin","year":"2010","unstructured":"Franklin, A. D. & Chen, Z. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 5, 858\u2013862 (2010).","journal-title":"Nat. Nanotechnol."},{"key":"2274_CR76","doi-asserted-by":"publisher","unstructured":"Yang, L., Lee, R. T. P., Rao, S. S. P., Tsai, W. & Ye, P. D. 10\u2009nm nominal channel length MoS2 FETs with EOT 2.5\u2009nm and 0.52\u2009mA\/\u00b5m drain current. In Proc. 2015 73rd Annual Device Research Conference (DRC) 237\u2013238 https:\/\/doi.org\/10.1109\/DRC.2015.7175655 (IEEE, 2015).","DOI":"10.1109\/DRC.2015.7175655"},{"key":"2274_CR77","doi-asserted-by":"publisher","first-page":"6069","DOI":"10.1021\/acsnano.4c12927","volume":"19","author":"H Jung","year":"2025","unstructured":"Jung, H. et al. Back-end-of-line-compatible passivation of sulfur vacancies in MoS2 transistors using electron-withdrawing benzenethiol. ACS Nano 19, 6069\u20136078 (2025).","journal-title":"ACS Nano"},{"key":"2274_CR78","doi-asserted-by":"publisher","unstructured":"Wang, X., Shi, X., Xiong, X., Huang, R. & Wu, Y. BEOL compatible high-performance monolayer WSe2 pFETs with record Gm\u2009=\u2009190\u2009\u03bcS\/\u03bcm and Ion\u2009=\u2009350\u2009\u03bcA\/\u03bcm by direct-growth on SiO2 substrate at reduced temperatures. In Proc. 2023 International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413833 (IEEE, 2023).","DOI":"10.1109\/IEDM45741.2023.10413833"},{"key":"2274_CR79","doi-asserted-by":"publisher","first-page":"456","DOI":"10.1038\/s41565-023-01375-6","volume":"18","author":"J Zhu","year":"2023","unstructured":"Zhu, J. et al. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200\u2009mm platform. Nat. Nanotechnol. 18, 456\u2013463 (2023). This paper reported low-thermal-budget growth of wafer-scale monolayer MoS2 on a 200-mm platform for silicon BEOL integration, realizing a functional hybrid MoS2\u2013silicon SRAM circuit.","journal-title":"Nat. Nanotechnol."},{"key":"2274_CR80","doi-asserted-by":"publisher","first-page":"24","DOI":"10.1038\/s41928-024-01265-2","volume":"8","author":"M Das","year":"2024","unstructured":"Das, M. et al. High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials. Nat. Electron. 8, 24\u201335 (2024).","journal-title":"Nat. Electron."},{"key":"2274_CR81","doi-asserted-by":"publisher","first-page":"18292","DOI":"10.1021\/acsnano.5c00234","volume":"19","author":"J Miao","year":"2025","unstructured":"Miao, J. et al. Lateral electric field engineering in scaled transistors based on 2D materials via phase transition. ACS Nano 19, 18292\u201318300 (2025).","journal-title":"ACS Nano"},{"key":"2274_CR82","doi-asserted-by":"publisher","unstructured":"Chou, A. S. et al. High-performance monolayer WSe2 p\/n FETs via antimony\u2013platinum modulated contact technology towards 2D CMOS electronics. In Proc. 2022 International Electron Devices Meeting (IEDM) 7.2.1\u20137.2.4 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019491 (IEEE, 2022).","DOI":"10.1109\/IEDM45625.2022.10019491"},{"key":"2274_CR83","doi-asserted-by":"publisher","unstructured":"Hung, T. Y. T. et al. pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping. In Proc. 2022 International Electron Devices Meeting (IEDM) 7.3.1\u20137.3.4 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019321 (IEEE, 2022).","DOI":"10.1109\/IEDM45625.2022.10019321"},{"key":"2274_CR84","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-54050-2","volume":"15","author":"Y Pan","year":"2024","unstructured":"Pan, Y. et al. Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. Nat. Commun. 15, 9631 (2024).","journal-title":"Nat. Commun."},{"key":"2274_CR85","doi-asserted-by":"publisher","first-page":"664","DOI":"10.1038\/s41928-021-00641-6","volume":"4","author":"D Lee","year":"2021","unstructured":"Lee, D. et al. Remote modulation doping in van der Waals heterostructure transistors. Nat. Electron. 4, 664\u2013670 (2021).","journal-title":"Nat. Electron."},{"key":"2274_CR86","doi-asserted-by":"publisher","first-page":"38","DOI":"10.1038\/s41928-020-00512-6","volume":"4","author":"S-Y Seo","year":"2020","unstructured":"Seo, S.-Y. et al. Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies. Nat. Electron. 4, 38\u201344 (2020).","journal-title":"Nat. Electron."},{"key":"2274_CR87","doi-asserted-by":"publisher","first-page":"4216","DOI":"10.1109\/TED.2020.3018099","volume":"67","author":"VP-H Hu","year":"2020","unstructured":"Hu, V. P.-H. et al. Energy-efficient monolithic 3-D SRAM cell with BEOL MoS2 FETs for SoC scaling. IEEE Trans. Electron Devices 67, 4216\u20134221 (2020).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2274_CR88","doi-asserted-by":"publisher","first-page":"1066","DOI":"10.1038\/s41565-024-01693-3","volume":"19","author":"YC Lu","year":"2024","unstructured":"Lu, Y. C., Huang, J. K., Chao, K. Y., Li, L. J. & Hu, V. P. Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16\u2009nm to 1\u2009nm technology nodes. Nat. Nanotechnol. 19, 1066\u20131072 (2024). This study projected superior stability, speed and energy efficiency for 2D-material-based SRAM over silicon SRAM across the 16-nm to 1-nm technology nodes.","journal-title":"Nat. Nanotechnol."},{"key":"2274_CR89","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-59993-8","volume":"16","author":"MUK Sadaf","year":"2025","unstructured":"Sadaf, M. U. K. et al. Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors. Nat. Commun. 16, 4879 (2025).","journal-title":"Nat. Commun."},{"key":"2274_CR90","doi-asserted-by":"publisher","first-page":"356","DOI":"10.1038\/s41928-022-00768-0","volume":"5","author":"T Knobloch","year":"2022","unstructured":"Knobloch, T. et al. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nat. Electron. 5, 356\u2013366 (2022).","journal-title":"Nat. Electron."},{"key":"2274_CR91","doi-asserted-by":"publisher","unstructured":"Shi, Y. et al. Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 37.31.31\u201337.31.34 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720676 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720676"},{"key":"2274_CR92","doi-asserted-by":"publisher","first-page":"906","DOI":"10.1038\/s41928-025-01468-1","volume":"8","author":"H Yan","year":"2025","unstructured":"Yan, H. et al. A clean van der Waals interface between the high-k dielectric zirconium oxide and two-dimensional molybdenum disulfide. Nat. Electron. 8, 906\u2013912 (2025).","journal-title":"Nat. Electron."},{"key":"2274_CR93","doi-asserted-by":"publisher","first-page":"1028","DOI":"10.1016\/j.apsusc.2019.03.139","volume":"481","author":"X Song","year":"2019","unstructured":"Song, X., Xu, J., Liu, L., Lai, P.-T. & Tang, W.-M. Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric. Appl. Surf. Sci. 481, 1028\u20131034 (2019).","journal-title":"Appl. Surf. Sci."},{"key":"2274_CR94","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202304242","volume":"34","author":"H Chen","year":"2023","unstructured":"Chen, H. et al. Highly nonlinear memory selectors with ultrathin MoS2\/WSe2\/MoS2 heterojunction. Adv. Funct. Mater. 34, 2304242 (2023).","journal-title":"Adv. Funct. Mater."},{"key":"2274_CR95","doi-asserted-by":"publisher","first-page":"28292","DOI":"10.1021\/acsnano.4c09421","volume":"18","author":"M Shen","year":"2024","unstructured":"Shen, M. et al. One-selector\u2013one-resistor integrated memory cells based on two-dimensional heterojunction memory selectors. ACS Nano 18, 28292\u201328300 (2024).","journal-title":"ACS Nano"},{"key":"2274_CR96","doi-asserted-by":"publisher","first-page":"2033","DOI":"10.1109\/TED.2021.3057598","volume":"68","author":"D Zhang","year":"2021","unstructured":"Zhang, D., Yeh, C.-H., Cao, W. & Banerjee, K. 0.5T0.5R\u2014an ultracompact RRAM cell uniquely enabled by van der Waals heterostructures. IEEE Trans. Electron Devices 68, 2033\u20132040 (2021).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2274_CR97","doi-asserted-by":"publisher","unstructured":"Tang, B. et al. 1T1R and 2T0C1R IGZO\u2013MoS2 all-BEOL 3D memory cells. In Proc. 2024 IEEE International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/iedm50854.2024.10873575 (IEEE, 2024).","DOI":"10.1109\/iedm50854.2024.10873575"},{"key":"2274_CR98","doi-asserted-by":"publisher","first-page":"90","DOI":"10.1038\/s41586-025-08839-w","volume":"641","author":"Y Xiang","year":"2025","unstructured":"Xiang, Y. et al. Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection. Nature 641, 90\u201397 (2025).","journal-title":"Nature"},{"key":"2274_CR99","doi-asserted-by":"publisher","first-page":"1081","DOI":"10.1038\/s41586-025-09621-8","volume":"646","author":"C Liu","year":"2025","unstructured":"Liu, C. et al. A full-featured 2D flash chip enabled by system integration. Nature 646, 1081\u20131088 (2025).","journal-title":"Nature"},{"key":"2274_CR100","unstructured":"Keating, M., Flynn, D., Aitken, R., Gibbons, A. & Shi, K. Low Power Methodology Manual: for System-on-Chip Design (Springer, 2007)."},{"key":"2274_CR101","doi-asserted-by":"publisher","first-page":"643","DOI":"10.1038\/s41928-022-00824-9","volume":"5","author":"Y Zhang","year":"2022","unstructured":"Zhang, Y. et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5\u2009nm. Nat. Electron. 5, 643\u2013649 (2022).","journal-title":"Nat. Electron."},{"key":"2274_CR102","doi-asserted-by":"publisher","first-page":"496","DOI":"10.1109\/LED.2023.3240676","volume":"44","author":"\u00c7 K\u00f6ro\u011flu","year":"2023","unstructured":"K\u00f6ro\u011flu, \u00c7 & Pop, E. High thermal conductivity insulators for thermal management in 3D integrated circuits. IEEE Electron Device Lett. 44, 496\u2013499 (2023).","journal-title":"IEEE Electron Device Lett."},{"key":"2274_CR103","doi-asserted-by":"publisher","first-page":"107","DOI":"10.1109\/JXCDC.2025.3617784","volume":"11","author":"AA Kedilaya","year":"2025","unstructured":"Kedilaya, A. A. et al. Beyond backside power: backside signal routing as technology booster for standard cell scaling. IEEE J. Explor. Solid-State Comput. Devices Circuits 11, 107\u2013115 (2025).","journal-title":"IEEE J. Explor. Solid-State Comput. Devices Circuits"},{"key":"2274_CR104","doi-asserted-by":"publisher","unstructured":"Li, L. et al. Cu diffusion barrier: graphene benchmarked to TaN for ultimate interconnect scaling. In Proc. 2015 Symposium on VLSI Technology (VLSI Technology) T122\u2013T123 https:\/\/doi.org\/10.1109\/VLSIT.2015.7223713 (IEEE, 2015).","DOI":"10.1109\/VLSIT.2015.7223713"},{"key":"2274_CR105","doi-asserted-by":"publisher","unstructured":"Pyzyna, A. et al. Resistivity of copper interconnects at 28\u2009nm pitch and copper cross-sectional area below 100\u2009nm2. In Proc. 2017 IEEE International Interconnect Technology Conference (IITC) 1\u20133 https:\/\/doi.org\/10.1109\/IITC-AMC.2017.7968982 (IEEE, 2017).","DOI":"10.1109\/IITC-AMC.2017.7968982"},{"key":"2274_CR106","doi-asserted-by":"publisher","first-page":"2541","DOI":"10.1039\/C6NR09484H","volume":"9","author":"JJ Bae","year":"2017","unstructured":"Bae, J. J. et al. Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition. Nanoscale 9, 2541\u20132547 (2017).","journal-title":"Nanoscale"},{"key":"2274_CR107","doi-asserted-by":"publisher","first-page":"1210","DOI":"10.1007\/s12274-014-0602-0","volume":"8","author":"N Peimyoo","year":"2014","unstructured":"Peimyoo, N. et al. Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy. Nano Res. 8, 1210\u20131221 (2014).","journal-title":"Nano Res."},{"key":"2274_CR108","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.13.034059","volume":"13","author":"Y Yu","year":"2020","unstructured":"Yu, Y., Minhaj, T., Huang, L., Yu, Y. & Cao, L. In-plane and interfacial thermal conduction of two-dimensional transition-metal dichalcogenides. Phys. Rev. Appl. 13, 034059 (2020).","journal-title":"Phys. Rev. Appl."},{"key":"2274_CR109","doi-asserted-by":"publisher","first-page":"8302","DOI":"10.1002\/adma.201602757","volume":"28","author":"J Wang","year":"2016","unstructured":"Wang, J. et al. High mobility MoS2 transistor with low Schottky barrier contact by using atomic thick h-BN as a tunneling layer. Adv. Mater. 28, 8302\u20138308 (2016).","journal-title":"Adv. Mater."},{"key":"2274_CR110","doi-asserted-by":"publisher","unstructured":"Chou A. S., et al. High on-current 2D nFET of 390 \u03bcA\/\u03bcm at VDS\u2009=\u20091\u2009V using monolayer CVD MoS2 without intentional doping. In Proc. 2020 IEEE Symposium on VLSI Technology 1\u20132 https:\/\/doi.org\/10.1109\/VLSITechnology18217.2020.9265040 (IEEE, 2020).","DOI":"10.1109\/VLSITechnology18217.2020.9265040"},{"key":"2274_CR111","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201703448","volume":"27","author":"AS Aji","year":"2017","unstructured":"Aji, A. S., Sol\u00eds-Fern\u00e1ndez, P., Ji, H. G., Fukuda, K. & Ago, H. High mobility WS2 transistors realized by multilayer graphene electrodes and application to high responsivity flexible photodetectors. Adv. Funct. Mater. 27, 1703448 (2017).","journal-title":"Adv. Funct. Mater."},{"key":"2274_CR112","doi-asserted-by":"publisher","unstructured":"Li, M. Y. et al. Wafer-scale bi-assisted semi-auto dry transfer and fabrication of high-performance monolayer CVD WS2 transistor. In Proc. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 290\u2013291 https:\/\/doi.org\/10.1109\/VLSITechnologyandCir46769.2022.9830376 (IEEE, 2022).","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830376"},{"key":"2274_CR113","doi-asserted-by":"publisher","first-page":"1983","DOI":"10.1021\/nl304777e","volume":"13","author":"W Liu","year":"2013","unstructured":"Liu, W. et al. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Nano Lett. 13, 1983\u20131990 (2013).","journal-title":"Nano Lett."},{"key":"2274_CR114","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201903613","volume":"31","author":"HG Ji","year":"2019","unstructured":"Ji, H. G. et al. Chemically tuned p- and n-type WSe2 monolayers with high carrier mobility for advanced electronics. Adv. Mater. 31, 1903613 (2019).","journal-title":"Adv. Mater."},{"key":"2274_CR115","doi-asserted-by":"publisher","first-page":"184","DOI":"10.1109\/LED.2020.3043430","volume":"42","author":"M Si","year":"2021","unstructured":"Si, M., Lin, Z., Charnas, A. & Ye, P. D. Scaled atomic-layer-deposited indium oxide nanometer transistors with maximum drain current exceeding 2\u2009A\/mm at drain voltage of 0.7\u2009V. IEEE Electron Device Lett. 42, 184\u2013187 (2021).","journal-title":"IEEE Electron Device Lett."},{"key":"2274_CR116","doi-asserted-by":"publisher","first-page":"208","DOI":"10.1109\/LED.2017.2786237","volume":"39","author":"Y Li","year":"2018","unstructured":"Li, Y. et al. Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors. IEEE Electron Device Lett. 39, 208\u2013211 (2018).","journal-title":"IEEE Electron Device Lett."},{"key":"2274_CR117","doi-asserted-by":"publisher","unstructured":"Samanta, S., Han, K., Sun, C., Wang, C., Thean, A. V. Y. & Gong, X. Amorphous IGZO TFTs featuring extremely-scaled channel thickness and 38\u2009nm channel length: achieving record high Gm,max of 125\u2009\u03bcS\/\u03bcm at VDS of 1\u2009V and ION of 350\u2009\u03bcA\/\u03bcm. In Proc. 2020 IEEE Symposium on VLSI Technology 1\u20132 https:\/\/doi.org\/10.1109\/VLSITechnology18217.2020.9265052 (IEEE, 2020).","DOI":"10.1109\/VLSITechnology18217.2020.9265052"},{"key":"2274_CR118","doi-asserted-by":"publisher","unstructured":"Liu, J. et al. Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 21.21.21\u201321.21.24 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720576 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720576"},{"key":"2274_CR119","doi-asserted-by":"publisher","unstructured":"Chand, U. et al. Sub-10nm ultra-thin ZnO channel FET with record-high 561\u2009\u00b5A\/\u00b5m ION at VDS 1\u2009V, high \u00b5\u201484\u2009cm2\/V-s and1T-1RRAM memory cell demonstration memory implications for energy-efficient deep-learning computing. In Proc. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 326\u2013327 https:\/\/doi.org\/10.1109\/VLSITechnologyandCir46769.2022.9830250 (IEEE, 2022).","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830250"},{"key":"2274_CR120","doi-asserted-by":"publisher","unstructured":"Chakraborty, W. et al. BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion\u2009=\u2009370\u03bcA\/\u03bcm, SS\u2009=\u200973\u2009mV\/dec and Ion \/Ioff ratio\u2009>\u20094\u2009\u00d7\u2009109. In Proc. 2020 IEEE Symposium on VLSI Technology 1\u20132 https:\/\/doi.org\/10.1109\/VLSITechnology18217.2020.9265064 (IEEE, 2020).","DOI":"10.1109\/VLSITechnology18217.2020.9265064"},{"key":"2274_CR121","doi-asserted-by":"publisher","unstructured":"Liang, Y. K. et al. Aggressively scaled atomic layer deposited amorphous InZnOx thin film transistor exhibiting prominent short channel characteristics (SS\u2009=\u200969\u2009mV\/dec.; DIBL\u2009=\u200927.8\u2009mV\/V) and high Gm(802\u2009\u03bcS\/\u03bcm at VDS\u2009=\u20092\u2009V). In Proc. 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 1\u20132 https:\/\/doi.org\/10.23919\/VLSITechnologyandCir57934.2023.10185343 (IEEE, 2023).","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185343"},{"key":"2274_CR122","doi-asserted-by":"publisher","unstructured":"Zheng, D. et al. First demonstration of BEOL-compatible ultrathin atomic-layer-deposited InZnO transistors with GHz operation and record high bias-stress stability. In Proc. 2022 International Electron Devices Meeting (IEDM) 4.3.1\u20134.3.4 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019452 (IEEE, 2022).","DOI":"10.1109\/IEDM45625.2022.10019452"},{"key":"2274_CR123","doi-asserted-by":"publisher","first-page":"2345","DOI":"10.1002\/adma.201505154","volume":"28","author":"X Liu","year":"2016","unstructured":"Liu, X. et al. P-type polar transition of chemically doped multilayer MoS2 transistor. Adv. Mater. 28, 2345\u20132351 (2016).","journal-title":"Adv. Mater."},{"key":"2274_CR124","doi-asserted-by":"publisher","first-page":"164","DOI":"10.1038\/s41928-019-0233-2","volume":"2","author":"Q Zhang","year":"2019","unstructured":"Zhang, Q. et al. Simultaneous synthesis and integration of two-dimensional electronic components. Nat. Electron. 2, 164\u2013170 (2019).","journal-title":"Nat. Electron."},{"key":"2274_CR125","doi-asserted-by":"publisher","first-page":"18215","DOI":"10.1021\/acsami.7b03177","volume":"9","author":"Q Cao","year":"2017","unstructured":"Cao, Q. et al. Realizing stable p-type transporting in two-dimensional WS2 films. ACS Appl. Mater. Interfaces 9, 18215\u201318221 (2017).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2274_CR126","doi-asserted-by":"publisher","first-page":"3788","DOI":"10.1021\/nl301702r","volume":"12","author":"H Fang","year":"2012","unstructured":"Fang, H. et al. High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788\u20133792 (2012).","journal-title":"Nano Lett."},{"key":"2274_CR127","doi-asserted-by":"publisher","unstructured":"Shi, X. et al. High-performance bilayer WSe2 pFET with record Ids\u2009=\u2009425\u2009\u03bcA\/\u03bcm and Gm\u2009=\u2009100\u2009\u03bcS\/\u03bcm at Vds\u2009=\u2009\u22121\u2009V by direct growth and fabrication on SiO2 substrate. In Proc. 2022 International Electron Devices Meeting (IEDM) 7.1.1\u20137.1.4 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019404 (IEEE, 2022).","DOI":"10.1109\/IEDM45625.2022.10019404"},{"key":"2274_CR128","doi-asserted-by":"publisher","DOI":"10.1088\/0256-307X\/37\/9\/098501","volume":"37","author":"B Lu","year":"2020","unstructured":"Lu, B. et al. Room-temperature processed amorphous ZnRhCuO thin films with p-type transistor and gas-sensor behaviors. Chin. Phys. Lett. 37, 098501 (2020).","journal-title":"Chin. Phys. Lett."},{"key":"2274_CR129","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1016\/j.apsusc.2014.07.107","volume":"315","author":"KC Sanal","year":"2014","unstructured":"Sanal, K. C. & Jayaraj, M. K. Room temperature deposited p-channel amorphous Cu1\u2212xCrxO2\u2212\u03b4 thin film transistors. Appl. Surf. Sci. 315, 274\u2013278 (2014).","journal-title":"Appl. Surf. Sci."},{"key":"2274_CR130","doi-asserted-by":"publisher","first-page":"2336","DOI":"10.1109\/TED.2020.2986489","volume":"67","author":"X Cheng","year":"2020","unstructured":"Cheng, X. et al. Amorphous p-type CuNiSnO thin-film transistors processed at low temperatures. IEEE Trans. Electron Devices 67, 2336\u20132341 (2020).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2274_CR131","doi-asserted-by":"publisher","first-page":"210","DOI":"10.1109\/LED.2016.2646378","volume":"38","author":"PC Chen","year":"2017","unstructured":"Chen, P. C. et al. Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment. IEEE Electron Device Lett. 38, 210\u2013212 (2017).","journal-title":"IEEE Electron Device Lett."},{"key":"2274_CR132","doi-asserted-by":"publisher","first-page":"798","DOI":"10.1038\/s41586-024-07360-w","volume":"629","author":"A Liu","year":"2024","unstructured":"Liu, A. et al. Selenium-alloyed tellurium oxide for amorphous p-channel transistors. Nature 629, 798\u2013802 (2024).","journal-title":"Nature"},{"key":"2274_CR133","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41586-022-05431-4","volume":"613","author":"W Li","year":"2023","unstructured":"Li, W. et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 613, 274\u2013279 (2023). This work reports a contact resistance of 42\u2009\u03a9\u2009\u00b5m in monolayer MoS2 using semimetallic antimony, pushing 2D electrical contact performance towards the fundamental quantum limit.","journal-title":"Nature"},{"key":"2274_CR134","doi-asserted-by":"publisher","first-page":"4781","DOI":"10.1021\/acs.nanolett.7b01536","volume":"17","author":"X Cui","year":"2017","unstructured":"Cui, X. et al. Low-temperature ohmic contact to monolayer MoS2 by van der Waals bonded Co\/h-BN electrodes. Nano Lett. 17, 4781\u20134786 (2017).","journal-title":"Nano Lett."},{"key":"2274_CR135","doi-asserted-by":"publisher","first-page":"8456","DOI":"10.1021\/acsnano.7b04100","volume":"11","author":"KKH Smithe","year":"2017","unstructured":"Smithe, K. K. H., Suryavanshi, S. V., Mu\u00f1oz Rojo, M., Tedjarati, A. D. & Pop, E. Low variability in synthetic monolayer MoS2 devices. ACS Nano 11, 8456\u20138463 (2017).","journal-title":"ACS Nano"},{"key":"2274_CR136","doi-asserted-by":"publisher","first-page":"3503","DOI":"10.1021\/acs.nanolett.1c00180","volume":"21","author":"H Cho","year":"2021","unstructured":"Cho, H. et al. Dramatic reduction of contact resistance via ultrathin LiF in two-dimensional MoS2 field effect transistors. Nano Lett. 21, 3503\u20133510 (2021).","journal-title":"Nano Lett."},{"key":"2274_CR137","doi-asserted-by":"publisher","first-page":"5077","DOI":"10.1021\/acs.nanolett.9b01355","volume":"19","author":"Z Cheng","year":"2019","unstructured":"Cheng, Z. et al. Immunity to contact scaling in MoS2 transistors using in situ edge contacts. Nano Lett. 19, 5077\u20135085 (2019).","journal-title":"Nano Lett."},{"key":"2274_CR138","doi-asserted-by":"publisher","first-page":"3807","DOI":"10.1021\/acs.nanolett.8b01091","volume":"18","author":"Y Zhu","year":"2018","unstructured":"Zhu, Y. et al. Monolayer molybdenum disulfide transistors with single-atom-thick gates. Nano Lett. 18, 3807\u20133813 (2018).","journal-title":"Nano Lett."},{"key":"2274_CR139","doi-asserted-by":"publisher","unstructured":"Kumar, A. et al. Sub-200\u2009\u03a9\u00b7\u00b5m alloyed contacts to synthetic monolayer MoS2. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 7.3.1\u20137.3.4 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720609 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720609"},{"key":"2274_CR140","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","volume":"593","author":"PC Shen","year":"2021","unstructured":"Shen, P. C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211\u2013217 (2021).","journal-title":"Nature"},{"key":"2274_CR141","doi-asserted-by":"publisher","unstructured":"Chou, A. S. et al. Antimony semimetal contact with enhanced thermal stability for high performance 2D electronics. In Proc. 2021 IEEE International Electron Devices Meeting (IEDM) 7.2.1\u20137.2.4 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720608 (IEEE, 2021). This paper demonstrated Sb as a semimetal contact for 2D materials, enabling low-resistance, thermally robust monolayer MoS2 contacts with BEOL-compatible performance.","DOI":"10.1109\/IEDM19574.2021.9720608"},{"key":"2274_CR142","doi-asserted-by":"publisher","first-page":"813","DOI":"10.1126\/science.adz2405","volume":"390","author":"L Gao","year":"2025","unstructured":"Gao, L. et al. Atomic layer bonding contacts in two-dimensional semiconductors. Science 390, 813\u2013818 (2025).","journal-title":"Science"},{"key":"2274_CR143","doi-asserted-by":"publisher","first-page":"1191","DOI":"10.1038\/s41928-025-01500-4","volume":"8","author":"M Du","year":"2025","unstructured":"Du, M. et al. Scaled crystalline antimony ohmic contacts for two-dimensional transistors. Nat. Electron. 8, 1191\u20131200 (2025).","journal-title":"Nat. Electron."},{"key":"2274_CR144","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202104935","volume":"33","author":"X Zhang","year":"2021","unstructured":"Zhang, X. et al. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Adv. Mater. 33, e2104935 (2021).","journal-title":"Adv. Mater."},{"key":"2274_CR145","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201901304","volume":"6","author":"CS Pang","year":"2020","unstructured":"Pang, C. S. et al. Atomically controlled tunable doping in high-performance WSe2 devices. Adv. Electron. Mater. 6, 1901304 (2020).","journal-title":"Adv. Electron. Mater."},{"key":"2274_CR146","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-025-59684-4","volume":"16","author":"S Ghosh","year":"2025","unstructured":"Ghosh, S. et al. High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping. Nat. Commun. 16, 5649 (2025).","journal-title":"Nat. Commun."},{"key":"2274_CR147","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/s41586-022-05134-w","volume":"610","author":"Y Wang","year":"2022","unstructured":"Wang, Y. et al. P-type electrical contacts for 2D transition-metal dichalcogenides. Nature 610, 61\u201366 (2022).","journal-title":"Nature"},{"key":"2274_CR148","doi-asserted-by":"publisher","first-page":"207","DOI":"10.1038\/s41565-025-02084-y","volume":"21","author":"C Wang","year":"2025","unstructured":"Wang, C. et al. Band-hybridized selenium contact for p-type semiconductors. Nat. Nanotechnol. 21, 207\u2013215 (2025).","journal-title":"Nat. Nanotechnol."},{"key":"2274_CR149","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-54218-w","volume":"15","author":"K Xiao","year":"2024","unstructured":"Xiao, K. et al. High performance Si\u2013MoS2 heterogeneous embedded DRAM. Nat. Commun. 15, 9782 (2024).","journal-title":"Nat. Commun."},{"key":"2274_CR150","doi-asserted-by":"publisher","first-page":"747","DOI":"10.1038\/s41563-025-02470-w","volume":"25","author":"S Gou","year":"2026","unstructured":"Gou, S. et al. Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors. Nat. Mater. 25, 747\u2013754 (2026). This study developed an in situ edge-contact process for ultralow-leakage MoS2 transistors and demonstrated quasi-non-volatile capacitorless DRAM for 2D memory applications.","journal-title":"Nat. Mater."}],"container-title":["Nature Nanotechnology"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02274-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02274-2","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02274-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,17]],"date-time":"2026-09-17T09:03:42Z","timestamp":1789635822000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02274-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,17]]},"references-count":150,"alternative-id":["2274"],"URL":"https:\/\/doi.org\/10.1038\/s41565-026-02274-2","relation":{},"ISSN":["1748-3387","1748-3395"],"issn-type":[{"value":"1748-3387","type":"print"},{"value":"1748-3395","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,17]]},"assertion":[{"value":"2 November 2025","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"20 June 2026","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 September 2026","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Ethics"}}]}}