{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,11,11]],"date-time":"2026-11-11T15:29:07Z","timestamp":1794410947215,"version":"4.9.0"},"reference-count":61,"publisher":"Springer Science and Business Media LLC","issue":"11","license":[{"start":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T00:00:00Z","timestamp":1789430400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T00:00:00Z","timestamp":1789430400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nat. Nanotechnol."],"published-print":{"date-parts":[[2026,11]]},"DOI":"10.1038\/s41565-026-02276-0","type":"journal-article","created":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T09:03:47Z","timestamp":1789463027000},"page":"1596-1604","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers"],"prefix":"10.1038","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3175-7164","authenticated-orcid":false,"given":"Chang","family":"Niu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Linjia","family":"Long","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Luqi","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-9128-7395","authenticated-orcid":false,"given":"Shuting","family":"Du","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jian-Yu","family":"Lin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kisoo","family":"Nam","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zehao","family":"Lin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-8509-3569","authenticated-orcid":false,"given":"Chang","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juanjuan","family":"Lu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7397-1209","authenticated-orcid":false,"given":"Haiyan","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3393-9252","authenticated-orcid":false,"given":"Haitong","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8466-9745","authenticated-orcid":false,"given":"Peide D.","family":"Ye","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,9,15]]},"reference":[{"key":"2276_CR1","doi-asserted-by":"publisher","unstructured":"Wong, S. et al. Monolithic 3D integrated circuits. In International Symposium on VLSI Technology, Systems, and Applications https:\/\/doi.org\/10.1109\/VTSA.2007.378923 (IEEE, 2007).","DOI":"10.1109\/VTSA.2007.378923"},{"key":"2276_CR2","doi-asserted-by":"publisher","first-page":"504","DOI":"10.1038\/s41586-022-04992-8","volume":"608","author":"W Wan","year":"2022","unstructured":"Wan, W. et al. A compute-in-memory chip based on resistive random-access memory. Nature 608, 504\u2013512 (2022).","journal-title":"Nature"},{"key":"2276_CR3","doi-asserted-by":"publisher","unstructured":"Zheng, L. & Li, H. CMOS\u2009+\u2009X technologies for neuro-vector-symbolic computing. In Device Research Conference\u2014Conference Digest, DRC https:\/\/doi.org\/10.1109\/DRC61706.2024.10605469 (IEEE, 2024).","DOI":"10.1109\/DRC61706.2024.10605469"},{"key":"2276_CR4","doi-asserted-by":"publisher","first-page":"78","DOI":"10.1038\/s41586-023-06251-w","volume":"620","author":"C Xiang","year":"2023","unstructured":"Xiang, C. et al. 3D integration enables ultralow-noise isolator-free lasers in silicon photonics. Nature 620, 78\u201385 (2023).","journal-title":"Nature"},{"key":"2276_CR5","doi-asserted-by":"publisher","unstructured":"Datta, S. et al. Amorphous oxide semiconductors for monolithic 3D integrated circuits. In IEEE Symposium on VLSI Technology and Circuits https:\/\/doi.org\/10.1109\/VLSITechnologyandCir46783.2024.10631324 (IEEE, 2024).","DOI":"10.1109\/VLSITechnologyandCir46783.2024.10631324"},{"key":"2276_CR6","doi-asserted-by":"publisher","first-page":"16","DOI":"10.1109\/MM.2019.2942982","volume":"39","author":"MD Bishop","year":"2019","unstructured":"Bishop, M. D., Wong, H. S. P., Mitra, S. & Shulaker, M. M. Monolithic 3-D integration. IEEE Micro 39, 16\u201327 (2019).","journal-title":"IEEE Micro"},{"key":"2276_CR7","doi-asserted-by":"publisher","first-page":"276","DOI":"10.1038\/s41586-023-06860-5","volume":"625","author":"D Jayachandran","year":"2024","unstructured":"Jayachandran, D. et al. Three-dimensional integration of two-dimensional field-effect transistors. Nature 625, 276\u2013281 (2024).","journal-title":"Nature"},{"key":"2276_CR8","doi-asserted-by":"publisher","first-page":"892","DOI":"10.1038\/s41928-024-01251-8","volume":"7","author":"S Ghosh","year":"2024","unstructured":"Ghosh, S. et al. Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias. Nat. Electron. 7, 892\u2013903 (2024).","journal-title":"Nat. Electron."},{"key":"2276_CR9","doi-asserted-by":"publisher","first-page":"615","DOI":"10.1038\/s41586-024-08236-9","volume":"636","author":"KS Kim","year":"2024","unstructured":"Kim, K. S. et al. Growth-based monolithic 3D integration of single-crystal 2D semiconductors. Nature 636, 615\u2013621 (2024).","journal-title":"Nature"},{"key":"2276_CR10","doi-asserted-by":"publisher","first-page":"340","DOI":"10.1038\/s41586-024-07406-z","volume":"630","author":"D Lu","year":"2024","unstructured":"Lu, D. et al. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 630, 340\u2013345 (2024).","journal-title":"Nature"},{"key":"2276_CR11","doi-asserted-by":"publisher","unstructured":"Niu, C. et al. First demonstration of BEOL wafer-scale all-ALD channel CFETs using IGZO and Te for monolithic 3D integration. In IEEE International Electron Devices Meeting (IEDM) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50854.2024.10873541 (IEEE, 2024).","DOI":"10.1109\/IEDM50854.2024.10873541"},{"key":"2276_CR12","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c04701","author":"Y Sun","year":"2024","unstructured":"Sun, Y. et al. BEOL Three-dimensional stackable oxide semiconductor CMOS inverter with a high voltage gain of 233 at cryogenic temperatures. Nano Lett https:\/\/doi.org\/10.1021\/acs.nanolett.4c04701 (2024).","journal-title":"Nano Lett"},{"key":"2276_CR13","doi-asserted-by":"publisher","first-page":"8","DOI":"10.1109\/MM.2019.2942978","volume":"39","author":"S Datta","year":"2019","unstructured":"Datta, S. et al. Back-end-of-line compatible transistors for monolithic 3-D integration. IEEE Micro 39, 8\u201315 (2019).","journal-title":"IEEE Micro"},{"key":"2276_CR14","doi-asserted-by":"publisher","first-page":"442","DOI":"10.1038\/s41928-018-0117-x","volume":"1","author":"S Salahuddin","year":"2018","unstructured":"Salahuddin, S., Ni, K. & Datta, S. The era of hyper-scaling in electronics. Nat. Electron. 1, 442\u2013450 (2018).","journal-title":"Nat. Electron."},{"key":"2276_CR15","doi-asserted-by":"publisher","first-page":"1091","DOI":"10.1038\/s41563-019-0455-8","volume":"18","author":"S Li","year":"2019","unstructured":"Li, S. et al. Nanometer-thin indium tin oxide for advanced high-performance electronics. Nat. Mater. 18, 1091\u20131097 (2019).","journal-title":"Nat. Mater."},{"key":"2276_CR16","doi-asserted-by":"publisher","first-page":"456","DOI":"10.1038\/s41565-023-01375-6","volume":"18","author":"J Zhu","year":"2023","unstructured":"Zhu, J. et al. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform. Nat. Nanotechnol. 18, 456\u2013463 (2023).","journal-title":"Nat. Nanotechnol."},{"key":"2276_CR17","doi-asserted-by":"publisher","first-page":"768","DOI":"10.1038\/s41928-024-01205-0","volume":"7","author":"S Yuvaraja","year":"2024","unstructured":"Yuvaraja, S. et al. Three-dimensional integrated metal\u2013oxide transistors. Nat. Electron. 7, 768\u2013776 (2024).","journal-title":"Nat. Electron."},{"key":"2276_CR18","doi-asserted-by":"publisher","first-page":"1999","DOI":"10.1109\/LED.2023.3329481","volume":"44","author":"K Han","year":"2023","unstructured":"Han, K., Kang, Y., Chen, X., Chen, Y. & Gong, X. Indium\u2013Tin\u2013oxide thin-film transistors with high field-effect mobility (129.5\u2009cm2\/V\u00b7s) and low thermal budget (150\u2009\u00b0C). IEEE Electron Device Lett. 44, 1999\u20132002 (2023).","journal-title":"IEEE Electron Device Lett."},{"key":"2276_CR19","doi-asserted-by":"publisher","unstructured":"Gong, X. et al. Reconfigurable 3D stacked oxide semiconductor devices for hybrid in-memory computing. Preprint at https:\/\/doi.org\/10.21203\/rs.3.rs-5138544\/v1 (2024).","DOI":"10.21203\/rs.3.rs-5138544\/v1"},{"key":"2276_CR20","doi-asserted-by":"publisher","first-page":"500","DOI":"10.1021\/acs.nanolett.0c03967","volume":"21","author":"M Si","year":"2021","unstructured":"Si, M. et al. Why In2O3 can make 0.7 nm atomic layer thin transistors. Nano Lett. 21, 500\u2013506 (2021).","journal-title":"Nano Lett."},{"key":"2276_CR21","doi-asserted-by":"publisher","first-page":"164","DOI":"10.1038\/s41928-022-00718-w","volume":"5","author":"M Si","year":"2022","unstructured":"Si, M. et al. Scaled indium oxide transistors fabricated using atomic layer deposition. Nat. Electron. 5, 164\u2013170 (2022).","journal-title":"Nat. Electron."},{"key":"2276_CR22","doi-asserted-by":"publisher","unstructured":"Li, Q. et al. First demonstration of sequential integration for stacked gate-all-around a-IGZO nanosheet transistors with record Id\u2009=\u20092.05\u2009mA\/\u00b5m, gm\u2009=\u20091.13 mS\/\u00b5m and ultralow SS\u2009=\u200966 mV\/dec. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413891 (IEEE, 2023).","DOI":"10.1109\/IEDM45741.2023.10413891"},{"key":"2276_CR23","doi-asserted-by":"publisher","unstructured":"Lee, J. et al. BEOL-compatible non-volatile capacitive synapse with ALD W-doped In2O3 Semiconductor Layer. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM50854.2024.10873481 (IEEE, 2024).","DOI":"10.1109\/IEDM50854.2024.10873481"},{"key":"2276_CR24","doi-asserted-by":"publisher","unstructured":"Liu, S. et al. Edge continual training and inference with RRAM-gain cell memory integrated on Si CMOS. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM50854.2024.10873546 (IEEE, 2024).","DOI":"10.1109\/IEDM50854.2024.10873546"},{"key":"2276_CR25","doi-asserted-by":"publisher","first-page":"21536","DOI":"10.1021\/acsnano.2c10383","volume":"16","author":"Z Lin","year":"2022","unstructured":"Lin, Z. et al. Nanometer-thick oxide semiconductor transistor with ultra-high drain current. ACS Nano 16, 21536\u201321545 (2022).","journal-title":"ACS Nano"},{"key":"2276_CR26","doi-asserted-by":"publisher","unstructured":"Zhang, Z. et al. Ultrahigh bias stability of ALD In2O3 FETs enabled by high temperature O2 annealing. In IEEE Symposium on VLSI Technology and Circuits https:\/\/doi.org\/10.23919\/VLSITechnologyandCir57934.2023.10185292 (IEEE, 2023).","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185292"},{"key":"2276_CR27","doi-asserted-by":"publisher","unstructured":"Matsuda, S. et al. 30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics. In IEEE Symposium on VLSI Technology and Circuits, T216\u2013T217 https:\/\/doi.org\/10.1109\/VLSIT.2015.7223680 (IEEE, 2015).","DOI":"10.1109\/VLSIT.2015.7223680"},{"key":"2276_CR28","doi-asserted-by":"publisher","unstructured":"Niu, C. et al. Record-low metal to semiconductor contact resistance in atomic-layer-deposited In2O3 TFTs reaching the quantum limit. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413708 (IEEE, 2023).","DOI":"10.1109\/IEDM45741.2023.10413708"},{"key":"2276_CR29","doi-asserted-by":"publisher","first-page":"3403","DOI":"10.1109\/TED.2024.3367312","volume":"71","author":"C Niu","year":"2024","unstructured":"Niu, C. et al. Surface accumulation induced negative Schottky barrier and ultralow contact resistance in atomic-layer-deposited In2O3 thin-film transistors. IEEE Trans. Electron Devices 71, 3403\u20133410 (2024).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2276_CR30","doi-asserted-by":"publisher","unstructured":"Lin, Z. et al. High-peformance BEOL-compatible atomic-layer-deposited In2O3 Fe-FETs enabled by channel length scaling down to 7 nm: achieving performance enhancement with large memory window of 2.2\u2009V, long retention\u2009>\u200910 years and high endurance\u2009>\u2009108 cycles. In IEEE International Electron Devices Meeting (IEDM) 17.4.1\u201317.4.4 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720652 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720652"},{"key":"2276_CR31","doi-asserted-by":"publisher","unstructured":"Huyghebaert, C. et al. 2D materials: roadmap to CMOS integration. In IEEE International Electron Devices Meeting (IEDM) 22.1.1\u201322.1.4 https:\/\/doi.org\/10.1109\/IEDM.2018.8614679 (IEEE, 2018).","DOI":"10.1109\/IEDM.2018.8614679"},{"key":"2276_CR32","doi-asserted-by":"publisher","unstructured":"Samavedam, S. B. et al. Future logic scaling: towards atomic channels and deconstructed chips. In IEEE International Electron Devices Meeting (IEDM) 1.1.1\u20131.1.10 https:\/\/doi.org\/10.1109\/IEDM13553.2020.9372023 (IEEE, 2020).","DOI":"10.1109\/IEDM13553.2020.9372023"},{"key":"2276_CR33","doi-asserted-by":"publisher","unstructured":"Shi, Y. et al. Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening. In IEEE International Electron Devices Meeting (IEDM) 37.1.1\u201337.1.4 https:\/\/doi.org\/10.1109\/IEDM19574.2021.9720676 (IEEE, 2021).","DOI":"10.1109\/IEDM19574.2021.9720676"},{"key":"2276_CR34","doi-asserted-by":"publisher","unstructured":"Chiang, K. H. et al. Integration of 0.75\u2009V VDD oxide\u2013semiconductor 1T1C memory with advanced logic for an ultra-low-power low-latency cache solution. In IEEE Symposium on VLSI Technology and Circuits https:\/\/doi.org\/10.23919\/VLSITechnologyandCir65189.2025.11074854 (IEEE, 2025).","DOI":"10.23919\/VLSITechnologyandCir65189.2025.11074854"},{"key":"2276_CR35","doi-asserted-by":"publisher","unstructured":"Zhao, Y. et al. Revealing the partially coherent nature of transport in IGZO. Preprint at https:\/\/doi.org\/10.48550\/arXiv.2512.21945 (2025).","DOI":"10.48550\/arXiv.2512.21945"},{"key":"2276_CR36","doi-asserted-by":"publisher","first-page":"798","DOI":"10.1038\/s41586-024-07360-w","volume":"629","author":"A Liu","year":"2024","unstructured":"Liu, A. et al. Selenium-alloyed tellurium oxide for amorphous p-channel transistors. Nature 629, 798\u2013802 (2024).","journal-title":"Nature"},{"key":"2276_CR37","doi-asserted-by":"publisher","first-page":"356","DOI":"10.1038\/s41928-024-01158-4","volume":"7","author":"J Kwon","year":"2024","unstructured":"Kwon, J. et al. 200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors. Nat. Electron. 7, 356\u2013364 (2024).","journal-title":"Nat. Electron."},{"key":"2276_CR38","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1007\/s44291-026-00164-4","volume":"3","author":"T Schram","year":"2026","unstructured":"Schram, T. et al. Integration and electrical evaluation of WS2 and MoS2 FETs in a 300 mm pilot line. Discov. Electron. 3, 15 (2026).","journal-title":"Discov. Electron."},{"key":"2276_CR39","doi-asserted-by":"publisher","unstructured":"Dorow, C. J. et al. Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413874 (IEEE, 2023).","DOI":"10.1109\/IEDM45741.2023.10413874"},{"key":"2276_CR40","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1149\/09807.0205ecst","volume":"98","author":"J Mitard","year":"2020","unstructured":"Mitard, J. et al. sub-40\u2009mV sigma VTH IGZO nFETs in 300mm fab. ECS Trans. Prime 98, 205\u2013217 (2020).","journal-title":"ECS Trans. Prime"},{"key":"2276_CR41","doi-asserted-by":"publisher","unstructured":"Asselberghs, I. et al. Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab. In IEEE International Electron Devices Meeting (IEDM) 40\u201342 https:\/\/doi.org\/10.1109\/IEDM13553.2020.9371926 (IEEE, 2020).","DOI":"10.1109\/IEDM13553.2020.9371926"},{"key":"2276_CR42","doi-asserted-by":"publisher","first-page":"299","DOI":"10.1126\/science.adu3803","volume":"389","author":"B Qin","year":"2025","unstructured":"Qin, B. et al. Two-dimensional indium selenide wafers for integrated electronics. Science 389, 299\u2013302 (2025).","journal-title":"Science"},{"key":"2276_CR43","doi-asserted-by":"publisher","unstructured":"Lee, J. et al. Monolithic 3D integration of dual-gated ALD oxide-channel non-volatile capacitive memory on 40nm Si CMOS for digital compute-in-memory. In IEEE International Electron Devices Meeting (IEDM) https:\/\/doi.org\/10.1109\/IEDM50572.2025.11353811 (IEEE, 2025).","DOI":"10.1109\/IEDM50572.2025.11353811"},{"key":"2276_CR44","doi-asserted-by":"publisher","first-page":"1470","DOI":"10.1038\/s41563-023-01704-z","volume":"22","author":"JH Kang","year":"2023","unstructured":"Kang, J. H. et al. Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions. Nat. Mater. 22, 1470\u20131477 (2023).","journal-title":"Nat. Mater."},{"key":"2276_CR45","doi-asserted-by":"publisher","first-page":"970","DOI":"10.1038\/s41565-024-01705-2","volume":"19","author":"R Pendurthi","year":"2024","unstructured":"Pendurthi, R. et al. Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors. Nat. Nanotechnol. 19, 970\u2013977 (2024).","journal-title":"Nat. Nanotechnol."},{"key":"2276_CR46","doi-asserted-by":"publisher","first-page":"1081","DOI":"10.1038\/s41586-025-09621-8","volume":"646","author":"C Liu","year":"2025","unstructured":"Liu, C. et al. A full-featured 2D flash chip enabled by system integration. Nature 646, 1081\u20131088 (2025).","journal-title":"Nature"},{"key":"2276_CR47","doi-asserted-by":"publisher","first-page":"595","DOI":"10.1038\/s41586-019-1493-8","volume":"572","author":"G Hills","year":"2019","unstructured":"Hills, G. et al. Modern microprocessor built from complementary carbon nanotube transistors. Nature 572, 595\u2013602 (2019).","journal-title":"Nature"},{"key":"2276_CR48","doi-asserted-by":"publisher","first-page":"7193","DOI":"10.1021\/acs.nanolett.0c02531","volume":"20","author":"Q Wang","year":"2020","unstructured":"Wang, Q. et al. Wafer-scale highly oriented monolayer MoS2 with large domain sizes. Nano Lett. 20, 7193\u20137199 (2020).","journal-title":"Nano Lett."},{"key":"2276_CR49","doi-asserted-by":"publisher","first-page":"1201","DOI":"10.1038\/s41565-021-00963-8","volume":"16","author":"T Li","year":"2021","unstructured":"Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201\u20131207 (2021).","journal-title":"Nat. Nanotechnol."},{"key":"2276_CR50","doi-asserted-by":"publisher","unstructured":"Lin, Z. et al. Enhancement of In2O3 field-effect mobility up to 152\u2009cm2\u2009V\u22121\u2009s\u22121 using HZO-based higher-k linear dielectric. In IEEE Symposium on VLSI Technology and Circuits https:\/\/doi.org\/10.1109\/VLSITechnologyandCir46783.2024.10631497 (IEEE, 2024).","DOI":"10.1109\/VLSITechnologyandCir46783.2024.10631497"},{"key":"2276_CR51","doi-asserted-by":"publisher","first-page":"1075","DOI":"10.1109\/TED.2021.3053229","volume":"68","author":"M Si","year":"2021","unstructured":"Si, M. et al. Enhancement-mode atomic-layer-deposited In2O3 transistors with maximum drain current of 2.2\u2009A\/mm at drain voltage of 0.7\u2009V by low-temperature annealing and stability in hydrogen environment. IEEE Trans. Electron Devices 68, 1075\u20131080 (2021).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2276_CR52","doi-asserted-by":"publisher","first-page":"1091","DOI":"10.1038\/s41563-019-0455-8","volume":"18","author":"S Li","year":"2019","unstructured":"Li, S. et al. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nat. Mater. 18, 1091\u20131097 (2019).","journal-title":"Nat. Mater."},{"key":"2276_CR53","doi-asserted-by":"publisher","first-page":"4156","DOI":"10.1109\/TED.2025.3583705","volume":"72","author":"J Zhang","year":"2025","unstructured":"Zhang, J. et al. Effects of gallium on electron transport and bias stability in ultrascaled amorphous InGaO transistors. IEEE Trans. Electron Devices 72, 4156\u20134162 (2025).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2276_CR54","doi-asserted-by":"publisher","first-page":"7136","DOI":"10.1109\/TED.2025.3612345","volume":"72","author":"H Park","year":"2025","unstructured":"Park, H. et al. Extreme EOT scaling in tungsten-doped In2O3 MOSFETs for enhanced stability and drive current. IEEE Trans. Electron Devices 72, 7136\u20137144 (2025).","journal-title":"IEEE Trans. Electron Devices"},{"key":"2276_CR55","doi-asserted-by":"publisher","unstructured":"Du, S. et al. 3D-CIMlet: a chiplet co-design framework for heterogeneous in-memory acceleration of edge LLM inference and continual learning. In IEEE Design Automation Conference https:\/\/doi.org\/10.1109\/DAC63849.2025.11133077 (IEEE, 2025).","DOI":"10.1109\/DAC63849.2025.11133077"},{"key":"2276_CR56","first-page":"6000","volume":"30","author":"A Vaswani","year":"2017","unstructured":"Vaswani, A. et al. Attention is all you need. Adv. Neural Inf. Process. Syst. 30, 6000\u20136010 (2017).","journal-title":"Adv. Neural Inf. Process. Syst."},{"key":"2276_CR57","doi-asserted-by":"crossref","unstructured":"Devlin, J., Chang, M.-W., Lee, K. & Toutanova, K. Bert: pre-training of deep bidirectional transformers for language understanding. In Proc. 2019 Conference of the North American Chapter of the Association for Computational Linguistics: Human Language Technologies Vol. 1 (eds Burstein, J. et al.) 4186\u20134171 (Association for Computational Linguistics, 2019).","DOI":"10.18653\/v1\/N19-1423"},{"key":"2276_CR58","first-page":"8","volume":"1","author":"A Radford","year":"2019","unstructured":"Radford, A. et al. Language models are unsupervised multitask learners. OpenAI Blog 1, 8 (2019).","journal-title":"OpenAI Blog"},{"key":"2276_CR59","unstructured":"Touvron, H. et al. Training data-efficient image transformers & distillation through attention. In Proc. 38th International Conference on Machine Learning Vol. 139, 10347\u201310357 https:\/\/proceedings.mlr.press\/v139\/touvron21a.html (PMLR, 2021)."},{"key":"2276_CR60","doi-asserted-by":"publisher","first-page":"654","DOI":"10.1038\/s41586-025-08759-9","volume":"640","author":"M Ao","year":"2025","unstructured":"Ao, M. et al. A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature 640, 654\u2013661 (2025).","journal-title":"Nature"},{"key":"2276_CR61","doi-asserted-by":"publisher","unstructured":"Yakubo, Y. et al. Crystalline oxide semiconductor-based 3D bank memory system for endpoint artificial intelligence with multiple neural networks facilitating context switching and power gating. In IEEE International Solid-State Circuits Conference (ISSCC) https:\/\/doi.org\/10.1109\/ISSCC42615.2023.10067603 (IEEE, 2023).","DOI":"10.1109\/ISSCC42615.2023.10067603"}],"container-title":["Nature Nanotechnology"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02276-0.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02276-0","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02276-0.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,11,11]],"date-time":"2026-11-11T15:03:38Z","timestamp":1794409418000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41565-026-02276-0"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,15]]},"references-count":61,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2026,11]]}},"alternative-id":["2276"],"URL":"https:\/\/doi.org\/10.1038\/s41565-026-02276-0","relation":{},"ISSN":["1748-3387","1748-3395"],"issn-type":[{"value":"1748-3387","type":"print"},{"value":"1748-3395","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,15]]},"assertion":[{"value":"11 February 2026","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"12 August 2026","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 September 2026","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Ethics"}}]}}