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J.S., D.B., H.G.X., D.J. and D.G.S. have filed a provisional US patent 63\/786,244 with the title \u2018A procedure for growing conductive silicon-doped \u03b1-(Al,Ga)\n                      2\n                      O\n                      3\n                      by suboxide molecular-beam epitaxy\u2019. The patent covers the epitaxial structure described in this article that enables conductive \u03b1\n                      -\n                      (Al\n                      \n                        x\n                      \n                      Ga\n                      \n                        1\u2212\n                        x\n                      \n                      )\n                      2\n                      O\n                      3\n                      films, as well as multiple device structures utilizing \u03b1\n                      -\n                      (Al\n                      \n                        x\n                      \n                      Ga\n                      \n                        1\u2212\n                        x\n                      \n                      )\n                      2\n                      O\n                      3\n                      channels.","order":1,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Ethics"}}]}}