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Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated regions\n                    <jats:sup>1\u201313<\/jats:sup>\n                    . However, they generally do not determine where an individual nucleus forms within the growth regions, leaving even single-nucleation events spatially stochastic and limiting deterministic construction of crystalline materials. Here we report etching-flux-mediated single-centred nucleation of two-dimensional (2D) semiconductors to deterministically localize a single nucleation event. The etching flux released from the barrier suppresses nuclei near the pattern boundary, leaving a single surviving nucleus at the pattern centre, and systematic experiments elucidate the mechanism and establish nucleation design rules for zero, single and multiple nucleation regimes. Etching-flux-mediated single-centred nucleation enables single-crystal molybdenum disulfide growth at the 10-\u03bcm scale, field-effect mobilities of up to 117\u2009cm\n                    <jats:sup>2<\/jats:sup>\n                    \u2009V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    and large-area uniformity with process compatibility. This in-plane chemical-flux strategy realizes spatially programmed growth, demonstrating nucleation\u2013growth decoupling for line-shaped single crystals, multiple transistors integrated within a large common crystal, and aligned 2D lateral heterostructures for self-aligned contacts. These capabilities open a path towards advanced 2D electronic integration and expand semiconductor deposition from controlling where materials grow to controlling where and how crystals can begin to form.\n                  <\/jats:p>","DOI":"10.1038\/s41586-026-11095-1","type":"journal-article","created":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T15:03:15Z","timestamp":1791385395000},"page":"398-406","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Spatially deterministic nucleation of 2D semiconductors by etching 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