{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T00:57:04Z","timestamp":1783645024768,"version":"3.55.0"},"reference-count":42,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2019,10,4]],"date-time":"2019-10-04T00:00:00Z","timestamp":1570147200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2019,10,4]],"date-time":"2019-10-04T00:00:00Z","timestamp":1570147200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si<jats:sub>1-x-y<\/jats:sub>Ge<jats:sub>x<\/jats:sub>Sn<jats:sub>y<\/jats:sub> ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si<jats:sub>0.864<\/jats:sub>Ge<jats:sub>0.108<\/jats:sub>Sn<jats:sub>0.028<\/jats:sub> thin film after a short time RTA process at 1100\u2009\u00b0C for 15\u2009seconds, the power factor achieves to 11.3 \u03bcWcm<jats:sup>\u22121<\/jats:sup> K<jats:sup>\u22122<\/jats:sup> at room temperature. The introduction of Sn into Si<jats:sub>1-x<\/jats:sub>Ge<jats:sub>x<\/jats:sub> dose not only significantly improve the conductivity of Si<jats:sub>1-x<\/jats:sub>Ge<jats:sub>x<\/jats:sub> thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.<\/jats:p>","DOI":"10.1038\/s41598-019-50754-4","type":"journal-article","created":{"date-parts":[[2019,10,4]],"date-time":"2019-10-04T10:02:49Z","timestamp":1570183369000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":35,"title":["Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation"],"prefix":"10.1038","volume":"9","author":[{"given":"Ying","family":"Peng","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lei","family":"Miao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Gao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengyan","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9151-0820","authenticated-orcid":false,"given":"Masashi","family":"Kurosawa","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Osamu","family":"Nakatsuka","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shigeaki","family":"Zaima","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2019,10,4]]},"reference":[{"key":"50754_CR1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-07208-8","volume":"9","author":"A Morata","year":"2018","unstructured":"Morata, A. et al. Large-area and adaptable electrospun silicon-based thermoelectric nanomaterials with high energy conversion efficiencies. Nature Communications 9, 4759 (2018).","journal-title":"Nature Communications"},{"key":"50754_CR2","doi-asserted-by":"publisher","first-page":"3239","DOI":"10.1016\/j.jpowsour.2010.11.081","volume":"196","author":"L Francioso","year":"2011","unstructured":"Francioso, L. et al. Flexible thermoelectric generator for ambient assisted living wearable biometric sensors. Journal of Power Sources 196, 3239\u20133243 (2011).","journal-title":"Journal of Power Sources"},{"key":"50754_CR3","doi-asserted-by":"publisher","first-page":"6532","DOI":"10.1039\/C3TA14960A","volume":"2","author":"H Park","year":"2014","unstructured":"Park, H. et al. Enhanced thermoelectric properties of PEDOT:PSS nanofilms by a chemical dedoping process. J. Mater. Chem. A 2, 6532\u20136539 (2014).","journal-title":"J. Mater. Chem. A"},{"key":"50754_CR4","doi-asserted-by":"publisher","first-page":"788","DOI":"10.1039\/c3ee23729j","volume":"6","author":"T Park","year":"2013","unstructured":"Park, T., Park, C., Kim, B., Shin, H. & Kim, E. Flexible PEDOT electrodes with large thermoelectric power factors to generate electricity by the touch of fingertips. Energy & Environmental Science 6, 788 (2013).","journal-title":"Energy & Environmental Science"},{"key":"50754_CR5","first-page":"1602116","volume":"7","author":"Z Fan","year":"2017","unstructured":"Fan, Z., Li, P., Du, D. & Ouyang, J. Significantly Enhanced Thermoelectric Properties of PEDOT:PSS Films through Sequential Post-Treatments with Common Acids and Bases. Advanced Energy. Materials 7, 1602116 (2017).","journal-title":"Materials"},{"key":"50754_CR6","doi-asserted-by":"publisher","first-page":"20826","DOI":"10.1021\/acsami.7b03710","volume":"9","author":"M Culebras","year":"2017","unstructured":"Culebras, M. et al. Manufacturing Te\/PEDOT Films for Thermoelectric Applications. ACS Applied Materials & Interfaces 9, 20826\u201320832 (2017).","journal-title":"ACS Applied Materials & Interfaces"},{"key":"50754_CR7","doi-asserted-by":"publisher","first-page":"17867","DOI":"10.1039\/C7TA04280A","volume":"5","author":"EJ Bae","year":"2017","unstructured":"Bae, E. J., Kang, Y. H., Lee, C. & Cho, S. Y. Engineered nanocarbon mixing for enhancing the thermoelectric properties of a telluride-PEDOT:PSS nanocomposite. Journal of Materials Chemistry A 5, 17867\u201317873 (2017).","journal-title":"Journal of Materials Chemistry A"},{"key":"50754_CR8","doi-asserted-by":"publisher","first-page":"6306","DOI":"10.1021\/acsami.6b15327","volume":"9","author":"M Culebras","year":"2017","unstructured":"Culebras, M. et al. High Thermoelectric Power Factor Organic Thin Films through Combination of Nanotube Multilayer Assembly and Electrochemical Polymerization. ACS Applied Materials & Interfaces 9, 6306\u20136313 (2017).","journal-title":"ACS Applied Materials & Interfaces"},{"key":"50754_CR9","doi-asserted-by":"publisher","first-page":"3351","DOI":"10.1002\/adma.201505922","volume":"28","author":"Y Sun","year":"2016","unstructured":"Sun, Y. et al. Flexible n-Type High-Performance Thermoelectric Thin Films of Poly(nickel-ethylenetetrathiolate) Prepared by an Electrochemical Method. Advanced Materials 28, 3351\u20133358 (2016).","journal-title":"Advanced Materials"},{"key":"50754_CR10","doi-asserted-by":"publisher","first-page":"1358","DOI":"10.1109\/LED.2016.2600590","volume":"37","author":"M Haras","year":"2016","unstructured":"Haras, M. et al. Fabrication of Thin-Film Silicon Membranes With Phononic Crystals for Thermal Conductivity Measurements. IEEE Electron Device Letters 37, 1358\u20131361 (2016).","journal-title":"IEEE Electron Device Letters"},{"key":"50754_CR11","doi-asserted-by":"publisher","first-page":"313","DOI":"10.1016\/j.rser.2013.12.030","volume":"32","author":"S LeBlanc","year":"2014","unstructured":"LeBlanc, S., Yee, S. K., Scullin, M. L., Dames, C. & Goodson, K. E. Material and manufacturing cost considerations for thermoelectrics. Renewable and Sustainable Energy Reviews 32, 313\u2013327 (2014).","journal-title":"Renewable and Sustainable Energy Reviews"},{"key":"50754_CR12","unstructured":"Bhandari, C. M. & Rowe, D. M. CRC Handbook of thermoelectrics. CRC Press, Boca Raton, FL 49 (1995)."},{"key":"50754_CR13","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1038\/nature09996","volume":"473","author":"Y Pei","year":"2011","unstructured":"Pei, Y. et al. Convergence of electronic bands for high performance bulk thermoelectrics. Nature 473, 66\u201369 (2011).","journal-title":"Nature"},{"key":"50754_CR14","doi-asserted-by":"publisher","first-page":"247","DOI":"10.1038\/nature23667","volume":"549","author":"W Zhao","year":"2017","unstructured":"Zhao, W. et al. Superparamagnetic enhancement of thermoelectric performance. Nature 549, 247\u2013251 (2017).","journal-title":"Nature"},{"key":"50754_CR15","doi-asserted-by":"publisher","first-page":"12727","DOI":"10.1103\/PhysRevB.47.12727","volume":"47","author":"LD Hicks","year":"1993","unstructured":"Hicks, L. D. & Dresselhaus, M. S. Effect of quantum-well structures on the thermoelectric figure of merit. Physical Review B 47, 12727\u201312731 (1993).","journal-title":"Physical Review B"},{"key":"50754_CR16","doi-asserted-by":"publisher","first-page":"321","DOI":"10.1149\/08607.0321ecst","volume":"86","author":"M Kurosawa","year":"2018","unstructured":"Kurosawa, M. et al. (Invited) A New Application of Ge1\u2212x Snx: Thermoelectric Materials. ECS Transactions 86, 321\u2013328 (2018).","journal-title":"ECS Transactions"},{"key":"50754_CR17","doi-asserted-by":"crossref","unstructured":"Khatami, S. N. & Aksamija, Z. Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn. Physical Review Applied 6 (2016).","DOI":"10.1103\/PhysRevApplied.6.014015"},{"key":"50754_CR18","doi-asserted-by":"publisher","first-page":"073106","DOI":"10.1063\/1.4757414","volume":"112","author":"P Moontragoon","year":"2012","unstructured":"Moontragoon, P., Soref, R. A. & Ikonic, Z. The direct and indirect bandgaps of unstrained SixGe1\u2212x\u2212ySny and their photonic device applications. Journal of Applied Physics 112, 073106 (2012).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR19","doi-asserted-by":"publisher","first-page":"231903","DOI":"10.1063\/1.4882175","volume":"104","author":"PI Gaiduk","year":"2014","unstructured":"Gaiduk, P. I., Lundsgaard Hansen, J., Nylandsted Larsen, A., Bregolin, F. L. & Skorupa, W. Suppression of tin precipitation in SiSn alloy layers by implanted carbon. Applied Physics Letters 104, 231903 (2014).","journal-title":"Applied Physics Letters"},{"key":"50754_CR20","doi-asserted-by":"publisher","unstructured":"German, R. M. Intermediate Stage Processes: Solution-Reprecipitation. In Liquid Phase Sintering 101\u2013126 (Springer US), https:\/\/doi.org\/10.1007\/978-1-4899-3599-1_5 (1985).","DOI":"10.1007\/978-1-4899-3599-1_5"},{"key":"50754_CR21","doi-asserted-by":"publisher","first-page":"1651","DOI":"10.1016\/0038-1098(71)90333-4","volume":"9","author":"JB Renucci","year":"1971","unstructured":"Renucci, J. B., Renucci, M. A. & Cardona, M. Volume dependence of the Raman frequencies of Ge Si alloys. Solid State Communications 9, 1651\u20131654 (1971).","journal-title":"Solid State Communications"},{"key":"50754_CR22","doi-asserted-by":"publisher","first-page":"253","DOI":"10.1016\/0038-1098(73)90692-3","volume":"12","author":"WJ Brya","year":"1973","unstructured":"Brya, W. J. Raman scattering in Ge Si alloys. Solid State Communications 12, 253\u2013257 (1973).","journal-title":"Solid State Communications"},{"key":"50754_CR23","doi-asserted-by":"crossref","unstructured":"D\u2019Costa, V. R., Tolle, J., Poweleit, C. D., Kouvetakis, J. & Men\u00e9ndez, J. Compositional dependence of Raman frequencies in ternary Ge1\u2212x\u2212y Six Sn y alloys. Physical Review B 76 (2007).","DOI":"10.1103\/PhysRevB.76.035211"},{"key":"50754_CR24","doi-asserted-by":"publisher","first-page":"393","DOI":"10.1016\/j.apsusc.2012.07.057","volume":"259","author":"J Liu","year":"2012","unstructured":"Liu, J. et al. The effects of ZnO layer and annealing temperature on the structure, optical and film\u2013substrate cohesion properties of SiGe thin films prepared by radio frequency magnetron sputtering. Applied Surface Science 259, 393\u2013398 (2012).","journal-title":"Applied Surface Science"},{"key":"50754_CR25","doi-asserted-by":"publisher","first-page":"154","DOI":"10.4236\/wjnse.2012.23020","volume":"02","author":"A Monshi","year":"2012","unstructured":"Monshi, A., Foroughi, M. R. & Monshi, M. R. Modified Scherrer Equation to Estimate More Accurately Nano-Crystallite Size Using XRD. World Journal of Nano Science and Engineering 02, 154\u2013160 (2012).","journal-title":"World Journal of Nano Science and Engineering"},{"key":"50754_CR26","doi-asserted-by":"publisher","first-page":"1148","DOI":"10.1016\/j.ultramic.2009.04.007","volume":"109","author":"J Kacher","year":"2009","unstructured":"Kacher, J., Landon, C., Adams, B. L. & Fullwood, D. Bragg\u2019s Law diffraction simulations for electron backscatter diffraction analysis. Ultramicroscopy 109, 1148\u20131156 (2009).","journal-title":"Ultramicroscopy"},{"key":"50754_CR27","doi-asserted-by":"publisher","first-page":"1963","DOI":"10.1016\/S0038-1101(01)00241-6","volume":"45","author":"LK Teh","year":"2001","unstructured":"Teh, L. K., Choi, W. K., Bera, L. K. & Chim, W. K. Structural characterisation of polycrystalline SiGe thin film. Solid-State Electronics 45, 1963\u20131966 (2001).","journal-title":"Solid-State Electronics"},{"key":"50754_CR28","doi-asserted-by":"publisher","first-page":"5469","DOI":"10.1063\/1.367404","volume":"83","author":"VZ-Q Li","year":"1998","unstructured":"Li, V. Z.-Q. et al. Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon\u2013germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases. Journal of Applied Physics 83, 5469\u20135476 (1998).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR29","doi-asserted-by":"publisher","first-page":"7331","DOI":"10.1039\/C5NR00181A","volume":"7","author":"J Lu","year":"2015","unstructured":"Lu, J., Guo, R., Dai, W. & Huang, B. Enhanced in-plane thermoelectric figure of merit in p-type SiGe thin films by nanograin boundaries. Nanoscale 7, 7331\u20137339 (2015).","journal-title":"Nanoscale"},{"key":"50754_CR30","doi-asserted-by":"publisher","first-page":"205402","DOI":"10.1088\/0957-4484\/24\/20\/205402","volume":"24","author":"N Neophytou","year":"2013","unstructured":"Neophytou, N. et al. Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si. Nanotechnology 24, 205402 (2013).","journal-title":"Nanotechnology"},{"key":"50754_CR31","doi-asserted-by":"publisher","first-page":"1477","DOI":"10.1016\/S0191-8141(99)00084-X","volume":"21","author":"B St\u00f6ckhert","year":"1999","unstructured":"St\u00f6ckhert, B. & Duyster, J. Discontinuous grain growth in recrystallised vein quartz \u2014 implications for grain boundary structure, grain boundary mobility, crystallographic preferred orientation, and stress history - ScienceDirect. Journal of Structural Geology 21, 1477\u20131490 (1999).","journal-title":"Journal of Structural Geology"},{"key":"50754_CR32","doi-asserted-by":"publisher","first-page":"076503","DOI":"10.1143\/JJAP.49.076503","volume":"49","author":"K Ukawa","year":"2010","unstructured":"Ukawa, K. et al. Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing. Japanese Journal of Applied Physics 49, 076503 (2010).","journal-title":"Japanese Journal of Applied Physics"},{"key":"50754_CR33","doi-asserted-by":"publisher","first-page":"112106","DOI":"10.1063\/1.2712504","volume":"90","author":"S-C Liufu","year":"2007","unstructured":"Liufu, S.-C., Chen, L.-D., Yao, Q. & Wang, C.-F. Assembly of one-dimensional nanorods into Bi2S3 films with enhanced thermoelectric transport properties. Applied Physics Letters 90, 112106 (2007).","journal-title":"Applied Physics Letters"},{"key":"50754_CR34","doi-asserted-by":"publisher","first-page":"3907","DOI":"10.1063\/1.1600524","volume":"94","author":"RS Makala","year":"2003","unstructured":"Makala, R. S., Jagannadham, K. & Sales, B. C. Pulsed laser deposition of Bi2Te3-based thermoelectric thin films. Journal of Applied Physics 94, 3907\u20133918 (2003).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR35","doi-asserted-by":"publisher","first-page":"522","DOI":"10.1246\/cl.2005.522","volume":"34","author":"Q Yao","year":"2005","unstructured":"Yao, Q., Chen, L., Xu, X. & Wang, C. The High Thermoelectric Properties of Conducting Polyaniline with Special Submicron-fibre Structure. Chemistry Letters 34, 522\u2013523 (2005).","journal-title":"Chemistry Letters"},{"key":"50754_CR36","doi-asserted-by":"publisher","first-page":"4343","DOI":"10.1063\/1.368697","volume":"84","author":"T Raz","year":"1998","unstructured":"Raz, T., Edelman, F., Komem, Y., St\u00f6lzer, M. & Zaumseil, P. Transport properties of boron-doped crystallized amorphous Si1\u2212xGex films. Journal of Applied Physics 84, 4343\u20134350 (1998).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR37","doi-asserted-by":"publisher","first-page":"4333","DOI":"10.1063\/1.348408","volume":"69","author":"CB Vining","year":"1991","unstructured":"Vining, C. B., Laskow, W., Hanson, J. O., Van der Beck, R. R. & Gorsuch, P. D. Thermoelectric properties of pressure-sintered Si0.8Ge0.2 thermoelectric alloys. Journal of Applied Physics 69, 4333\u20134340 (1991).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR38","doi-asserted-by":"publisher","first-page":"2899","DOI":"10.1063\/1.1713126","volume":"35","author":"JP Dismukes","year":"1964","unstructured":"Dismukes, J. P., Ekstrom, L., Steigmeier, E. F., Kudman, I. & Beers, D. S. Thermal and Electrical Properties of Heavily Doped Ge\u2010Si Alloys up to 1300\u00b0K. Journal of Applied Physics 35, 2899\u20132907 (1964).","journal-title":"Journal of Applied Physics"},{"key":"50754_CR39","doi-asserted-by":"publisher","first-page":"2261","DOI":"10.1021\/acsaem.8b00333","volume":"1","author":"B Paul","year":"2018","unstructured":"Paul, B., Bj\u00f6rk, E. M., Kumar, A., Lu, J. & Eklund, P. Nanoporous Ca3Co4O9 Thin Films for Transferable Thermoelectrics. ACS Applied Energy Materials 1, 2261\u20132268 (2018).","journal-title":"ACS Applied Energy Materials"},{"key":"50754_CR40","doi-asserted-by":"publisher","first-page":"21015","DOI":"10.1021\/acsami.5b07144","volume":"7","author":"C Zhou","year":"2015","unstructured":"Zhou, C. et al. Nanowires as Building Blocks to Fabricate Flexible Thermoelectric Fabric: The Case of Copper Telluride Nanowires. ACS Applied Materials & Interfaces 7, 21015\u201321020 (2015).","journal-title":"ACS Applied Materials & Interfaces"},{"key":"50754_CR41","doi-asserted-by":"publisher","first-page":"25237","DOI":"10.1039\/C7RA02980B","volume":"7","author":"C Park","year":"2017","unstructured":"Park, C. et al. Large-scalable RTCVD Graphene\/PEDOT:PSS hybrid conductive film for application in transparent and flexible thermoelectric nanogenerators. RSC Advances 7, 25237\u201325243 (2017).","journal-title":"RSC Advances"},{"key":"50754_CR42","doi-asserted-by":"publisher","first-page":"77","DOI":"10.4028\/www.scientific.net\/SSP.156-158.77","volume":"156\u2013158","author":"J Kouvetakis","year":"2009","unstructured":"Kouvetakis, J., Menendez, J. & Tolle, J. Advanced Si-based Semiconductors for Energy and Photonic Applications. Solid State Phenomena 156\u2013158, 77\u201384 (2009).","journal-title":"Solid State Phenomena"}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-50754-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-50754-4","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-50754-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,17]],"date-time":"2022-12-17T14:24:15Z","timestamp":1671287055000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-50754-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10,4]]},"references-count":42,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2019,12]]}},"alternative-id":["50754"],"URL":"https:\/\/doi.org\/10.1038\/s41598-019-50754-4","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,10,4]]},"assertion":[{"value":"26 March 2019","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"5 September 2019","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 October 2019","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing Interests"}}],"article-number":"14342"}}