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In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN\/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The I\n                    <jats:sub>DS<\/jats:sub>\n                    difference between the pulse and DC bias measurement was about 21% at high bias V\n                    <jats:sub>DS<\/jats:sub>\n                    due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22\u2009\u00b0C in a HEMT operating at ~10.6 Wmm\n                    <jats:sup>\u22121<\/jats:sup>\n                    after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.\n                  <\/jats:p>","DOI":"10.1038\/s41598-019-56292-3","type":"journal-article","created":{"date-parts":[[2019,12,23]],"date-time":"2019-12-23T06:02:42Z","timestamp":1577080962000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":72,"title":["Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure"],"prefix":"10.1038","volume":"9","author":[{"given":"Srikant Kumar","family":"Mohanty","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu-Yan","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ping-Hung","family":"Yeh","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1160-6775","authenticated-orcid":false,"given":"Ray-Hua","family":"Horng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2019,12,23]]},"reference":[{"key":"56292_CR1","unstructured":"Trew, R. 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