{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T19:42:41Z","timestamp":1790710961748,"version":"4.1.0"},"reference-count":36,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2020,11,2]],"date-time":"2020-11-02T00:00:00Z","timestamp":1604275200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2020,11,2]],"date-time":"2020-11-02T00:00:00Z","timestamp":1604275200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["2018M3A7B4071521"],"award-info":[{"award-number":["2018M3A7B4071521"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["2018M3A7B4071521"],"award-info":[{"award-number":["2018M3A7B4071521"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>We report a novel self-patterning method for solution-processed indium zinc oxide (IZO) thin films based on photosensitive precursors. This approach is an alternative and evolutionary approach to the traditional photoresist patterning techniques. Chelate bonds between metal ions and \u03b2-diketone compounds in ultraviolet light-exposed IZO solutions provided intrinsic photosensitivity, which resulted in a solubility difference between exposed and non-exposed regions. This difference enabled self-patterning of the IZO for thin-film transistor (TFT) fabrication. Compared with previously reported self-patterning methods based on photosensitive activators, our self-patterned IZO TFTs based on photosensitive precursors displayed excellent electrical characteristics and stability. The field-effect mobility increased from 0.27 to 0.99 cm<jats:sup>2<\/jats:sup>\/Vs, the subthreshold swing decreased from 0.54 to 0.46\u00a0V\/dec, and the threshold voltage shift under a positive bias stress test (1,000\u00a0s) improved from 9.32 to 1.68\u00a0V. The photosensitive precursor played a key role in these improvements permitting fewer organic species which act as defect sites after metal oxide formation. Consequently, our approach compares favorably with that of conventional fabrication process using photoresist in terms of its simplicity, cost efficiency, and electrical performance.<\/jats:p>","DOI":"10.1038\/s41598-020-76080-8","type":"journal-article","created":{"date-parts":[[2020,11,2]],"date-time":"2020-11-02T11:24:59Z","timestamp":1604316299000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Enhancement of electrical characteristics and stability of self-patterned In\u2013Zn\u2013O thin-film transistors based on photosensitive precursors"],"prefix":"10.1038","volume":"10","author":[{"given":"Hee Jun","family":"Kim","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Joohye","family":"Jung","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyun Jae","family":"Kim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2020,11,2]]},"reference":[{"key":"76080_CR1","doi-asserted-by":"publisher","first-page":"2945","DOI":"10.1002\/adma.201103228","volume":"24","author":"E Fortunato","year":"2012","unstructured":"Fortunato, E., Barquinha, P. & Martins, R. Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater. 24, 2945\u20132986 (2012).","journal-title":"Adv. Mater."},{"key":"76080_CR2","doi-asserted-by":"publisher","first-page":"231","DOI":"10.1080\/15980316.2019.1664650","volume":"20","author":"SP Park","year":"2019","unstructured":"Park, S. P., Kim, H. J., Lee, J. H. & Kim, H. J. Glucose-based resistive random access memory for transient electronics. J. Inf. Disp. 20, 231\u2013237 (2019).","journal-title":"J. Inf. Disp."},{"key":"76080_CR3","doi-asserted-by":"publisher","first-page":"2483","DOI":"10.1021\/acsaelm.9b00653","volume":"1","author":"Z Wang","year":"2019","unstructured":"Wang, Z. et al. Cluster size control toward high performance solution processed InGaZnO thin film transistor. ACS. Appl. Electron. Mater. 1, 2483\u20132488 (2019).","journal-title":"ACS. Appl. Electron. Mater."},{"key":"76080_CR4","doi-asserted-by":"publisher","first-page":"1842","DOI":"10.1021\/acsaelm.9b00377","volume":"1","author":"Y Li","year":"2019","unstructured":"Li, Y. et al. High-performance thin-film transistors with aqueous solution-processed NiInO channel layer. ACS. Appl. Electron. Mater. 1, 1842\u20131851 (2019).","journal-title":"ACS. Appl. Electron. Mater."},{"key":"76080_CR5","doi-asserted-by":"publisher","first-page":"382","DOI":"10.1038\/nmat3011","volume":"10","author":"MG Kim","year":"2011","unstructured":"Kim, M. G., Kanatzidis, M. G., Facchetti, A. & Marks, T. J. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nat. Mater. 10, 382\u2013388 (2011).","journal-title":"Nat. Mater."},{"key":"76080_CR6","doi-asserted-by":"publisher","DOI":"10.1080\/15980316.2019.1708820","author":"IS Lee","year":"2019","unstructured":"Lee, I. S. et al. Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer. J. Inf. Disp. https:\/\/doi.org\/10.1080\/15980316.2019.1708820 (2019).","journal-title":"J. Inf. Disp."},{"key":"76080_CR7","doi-asserted-by":"publisher","first-page":"1904632","DOI":"10.1002\/adfm.201904632","volume":"30","author":"JW Park","year":"2020","unstructured":"Park, J. W., Kang, B. H. & Kim, H. J. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics. Adv. Funct. Mater. 30, 1904632 (2020).","journal-title":"Adv. Funct. Mater."},{"key":"76080_CR8","doi-asserted-by":"publisher","first-page":"10490","DOI":"10.1038\/srep10490","volume":"5","author":"HC Lin","year":"2015","unstructured":"Lin, H. C. et al. Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro\/nanowires and improving field-effect mobility. Sci. Rep. 5, 10490 (2015).","journal-title":"Sci. Rep."},{"key":"76080_CR9","doi-asserted-by":"publisher","first-page":"9680","DOI":"10.1021\/nn504420r","volume":"8","author":"YS Rim","year":"2014","unstructured":"Rim, Y. S. et al. Direct light pattern integration of low-temperature solution-processed all-oxide flexible electronics. ACS Nano 8, 9680\u20139686 (2014).","journal-title":"ACS Nano"},{"key":"76080_CR10","doi-asserted-by":"crossref","unstructured":"Aumaitre, C., Joly, D., Aldakov, D. & Demadrille, R. Syntax of referencing in The Future of Semiconductor Oxides in Next-Generation Solar Cells (ed. Lira-Cantu, M.) 85\u2013115 (Elsevier, 2018).","DOI":"10.1016\/B978-0-12-811165-9.00003-X"},{"key":"76080_CR11","doi-asserted-by":"publisher","DOI":"10.1017\/9781108559034","volume-title":"Organic and amorphous-metal-oxide flexible analogue electronics","author":"V Pecunia","year":"2018","unstructured":"Pecunia, V., Fattori, M., Abdinia, S., Sirringhaus, H. & Cantatore, E. Organic and amorphous-metal-oxide flexible analogue electronics (Cambridge University Press, Cambridge, 2018)."},{"key":"76080_CR12","doi-asserted-by":"publisher","first-page":"893","DOI":"10.1109\/LED.2006.883564","volume":"27","author":"CY Chen","year":"2006","unstructured":"Chen, C. Y. et al. Plasma damage-enhanced negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors. IEEE Electron Device Lett. 27, 893\u2013895 (2006).","journal-title":"IEEE Electron Device Lett."},{"key":"76080_CR13","doi-asserted-by":"publisher","first-page":"6169","DOI":"10.1039\/C8TC06596A","volume":"7","author":"K Liang","year":"2019","unstructured":"Liang, K. et al. High-performance metal-oxide thin-film transistors based on inkjet-printed self-confined bilayer heterojunction channels. J. Mater. Chem. C. 7, 6169\u20136177 (2019).","journal-title":"J. Mater. Chem. C."},{"key":"76080_CR14","doi-asserted-by":"publisher","first-page":"015003","DOI":"10.1088\/2058-8585\/ab603b","volume":"5","author":"X Wei","year":"2020","unstructured":"Wei, X. et al. Solution-processed flexible metal-oxide thin-film transistors operating beyond 20 MHz. Flex. Print. Electron. 5, 015003 (2020).","journal-title":"Flex. Print. Electron."},{"key":"76080_CR15","doi-asserted-by":"publisher","first-page":"151","DOI":"10.1016\/j.jneumeth.2004.01.011","volume":"136","author":"NE Sanjana","year":"2004","unstructured":"Sanjana, N. E. & Fuller, S. B. A fast flexible ink-jet printing method for patterning dissociated neurons in culture. J. Neurosci. Methods 136, 151\u2013163 (2004).","journal-title":"J. Neurosci. Methods"},{"key":"76080_CR16","doi-asserted-by":"publisher","first-page":"5043","DOI":"10.1002\/adma.201502239","volume":"27","author":"WJ Lee","year":"2015","unstructured":"Lee, W. J. et al. Large-scale precise printing of ultrathin sol-gel oxide dielectrics for directly patterned solution-processed metal oxide transistor arrays. Adv. Mater. 27, 5043\u20135048 (2015).","journal-title":"Adv. Mater."},{"key":"76080_CR17","doi-asserted-by":"publisher","first-page":"3565","DOI":"10.1021\/am302722h","volume":"5","author":"YS Rim","year":"2013","unstructured":"Rim, Y. S., Lim, H. S. & Kim, H. J. Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis. ACS Appl. Mater. Interfaces 5, 3565\u20133571 (2013).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"76080_CR18","doi-asserted-by":"publisher","first-page":"175","DOI":"10.1109\/JDT.2006.871400","volume":"2","author":"Y Li","year":"2006","unstructured":"Li, Y., Zhao, G. Y., Zhang, W. H. & Chen, Y. Q. Using the photolysis of chemically modified gel films preparing ITO fine patterned thin films. J. Disp. Technol. 2, 175\u2013179 (2006).","journal-title":"J. Disp. Technol."},{"key":"76080_CR19","doi-asserted-by":"publisher","first-page":"180","DOI":"10.1002\/sdtp.11619","volume":"48","author":"HJ Kim","year":"2017","unstructured":"Kim, H. J. et al. Self-pattern process of InZnO thin-film transistors using photosensitive precursors. SID Int. Symp. Dig. Tech. Pap. 48, 180\u2013182 (2017).","journal-title":"SID Int. Symp. Dig. Tech. Pap."},{"key":"76080_CR20","doi-asserted-by":"publisher","first-page":"1985","DOI":"10.1016\/j.tsf.2010.10.043","volume":"519","author":"Y Chen","year":"2011","unstructured":"Chen, Y., Zhao, G., Ren, Y. & Wang, Z. Microfabrication of dilute magnetic semiconducting Ti1-xCoxO2 films using photosensitive sol-gel method. Thin Solid Films 519, 1985\u20131988 (2011).","journal-title":"Thin Solid Films"},{"key":"76080_CR21","doi-asserted-by":"publisher","first-page":"325","DOI":"10.1007\/s10971-010-2198-5","volume":"54","author":"YQ Chen","year":"2010","unstructured":"Chen, Y. Q., Zhao, G. Y. & Yan, F. X. Ferromagnetic Co-doped ZnO film and fine patterns prepared using photosensitive sol-gel method. J. Sol-Gel Sci. Technol. 54, 325\u2013328 (2010).","journal-title":"J. Sol-Gel Sci. Technol."},{"key":"76080_CR22","doi-asserted-by":"publisher","first-page":"J111","DOI":"10.1149\/1.3298886","volume":"157","author":"CY Koo","year":"2010","unstructured":"Koo, C. Y. et al. Low temperature solution-processed InZnO thin-film transistors. J. Electrochem. Soc. 157, J111\u2013J115 (2010).","journal-title":"J. Electrochem. Soc."},{"key":"76080_CR23","doi-asserted-by":"publisher","first-page":"9228","DOI":"10.1021\/am5013672","volume":"6","author":"BD Ahn","year":"2014","unstructured":"Ahn, B. D., Jeon, H. J. & Park, J. S. Effects of Ga: N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing. ACS Appl. Mater. Interfaces 6, 9228\u20139235 (2014).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"76080_CR24","doi-asserted-by":"publisher","first-page":"8067","DOI":"10.1021\/am402153g","volume":"5","author":"JH Park","year":"2013","unstructured":"Park, J. H. et al. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. ACS Appl. Mater. Interfaces 5, 8067\u20138075 (2013).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"76080_CR25","doi-asserted-by":"publisher","first-page":"11660","DOI":"10.1021\/acsami.5b02971","volume":"7","author":"HT Pham","year":"2015","unstructured":"Pham, H. T. & Jeong, H. D. Newly observed temperature and surface ligand dependence of electron mobility in indium oxide nanocrystals solids. ACS Appl. Mater. Interfaces 7, 11660\u201311667 (2015).","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"76080_CR26","doi-asserted-by":"publisher","first-page":"8305","DOI":"10.1021\/acs.chemmater.6b03499","volume":"28","author":"RA John","year":"2016","unstructured":"John, R. A. et al. Low-temperature chemical transformations for high-performance solution-processed oxide transistors. Chem. Mater. 28, 8305\u20138313 (2016).","journal-title":"Chem. Mater."},{"key":"76080_CR27","doi-asserted-by":"publisher","first-page":"4818","DOI":"10.1039\/C5SM00787A","volume":"11","author":"A Kowalewska","year":"2015","unstructured":"Kowalewska, A., Nowacka, M., Tracz, A. & Makowski, T. Supramolecular self-assembly of linear oligosilsesquioxanes on mica-AFM surface imaging and hydrophilicity studies. Soft Matter 11, 4818\u20134829 (2015).","journal-title":"Soft Matter"},{"key":"76080_CR28","doi-asserted-by":"publisher","first-page":"1600373","DOI":"10.1002\/admi.201600373","volume":"3","author":"CC Yeh","year":"2016","unstructured":"Yeh, C. C. et al. Controllable formation of zinc oxide micro- and nanostructures via DUV direct patterning. Adv. Mater. Interfaces 3, 1600373 (2016).","journal-title":"Adv. Mater. Interfaces"},{"key":"76080_CR29","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1016\/j.bios.2013.11.076","volume":"55","author":"J Jung","year":"2014","unstructured":"Jung, J. et al. Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors. Biosens. Bioelectron. 55, 99\u2013105 (2014).","journal-title":"Biosens. Bioelectron."},{"key":"76080_CR30","doi-asserted-by":"publisher","first-page":"4303","DOI":"10.1143\/JJAP.45.4303","volume":"45","author":"K Nomura","year":"2006","unstructured":"Nomura, K. et al. Amorphous oxide semiconductors for high-performance flexible thin-film transistors. Jpn. J. Appl. Phys. 45, 4303\u20134308 (2006).","journal-title":"Jpn. J. Appl. Phys."},{"key":"76080_CR31","doi-asserted-by":"publisher","first-page":"2620","DOI":"10.1063\/1.327991","volume":"51","author":"RW Hewitt","year":"1980","unstructured":"Hewitt, R. W. & Winograd, N. Oxidation of polycrystalline indium studied by x-ray photoelectron spectroscopy and static secondary ion mass spectroscopy. J. Appl. Phys. 51, 2620\u20132624 (1980).","journal-title":"J. Appl. Phys."},{"key":"76080_CR32","doi-asserted-by":"publisher","first-page":"242102","DOI":"10.1063\/1.4811416","volume":"102","author":"LF Lan","year":"2013","unstructured":"Lan, L. F. et al. Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5. Appl. Phys. Lett. 102, 242102 (2013).","journal-title":"Appl. Phys. Lett."},{"key":"76080_CR33","doi-asserted-by":"publisher","first-page":"3509","DOI":"10.1002\/adma.201200683","volume":"24","author":"HW Zan","year":"2012","unstructured":"Zan, H. W. et al. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer. Adv. Mater. 24, 3509\u20133514 (2012).","journal-title":"Adv. Mater."},{"key":"76080_CR34","doi-asserted-by":"publisher","first-page":"H357","DOI":"10.1149\/1.3474606","volume":"13","author":"SJ Seo","year":"2010","unstructured":"Seo, S. J., Hwang, Y. H. & Bae, B. S. Postannealing process for low temperature processed sol-gel zinc tin oxide thin film transistors. Electrochem. Solid-State Lett. 13, H357\u2013H359 (2010).","journal-title":"Electrochem. Solid-State Lett."},{"key":"76080_CR35","doi-asserted-by":"publisher","first-page":"045502","DOI":"10.1088\/0022-3727\/47\/4\/045502","volume":"47","author":"YS Rim","year":"2010","unstructured":"Rim, Y. S., Ahn, B. D., Park, J. S. & Kim, H. J. Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature. J. Phys. D Appl. Phys. 47, 045502 (2010).","journal-title":"J. Phys. D Appl. Phys."},{"key":"76080_CR36","doi-asserted-by":"publisher","first-page":"6656","DOI":"10.1021\/cm051921h","volume":"17","author":"C Di Valentin","year":"2005","unstructured":"Di Valentin, C., Pacchioni, G. & Selloni, A. Theory of carbon doping of titanium dioxide. Chem. Mater. 17, 6656\u20136665 (2005).","journal-title":"Chem. Mater."}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41598-020-76080-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-020-76080-8","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-020-76080-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,6]],"date-time":"2022-12-06T22:29:54Z","timestamp":1670365794000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41598-020-76080-8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,2]]},"references-count":36,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2020,12]]}},"alternative-id":["76080"],"URL":"https:\/\/doi.org\/10.1038\/s41598-020-76080-8","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,11,2]]},"assertion":[{"value":"30 July 2020","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"19 October 2020","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"2 November 2020","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"18853"}}