{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,16]],"date-time":"2026-10-16T04:46:21Z","timestamp":1792125981519,"version":"4.4.0"},"reference-count":72,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2026,7,15]],"date-time":"2026-07-15T00:00:00Z","timestamp":1784073600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0"},{"start":{"date-parts":[[2026,10,16]],"date-time":"2026-10-16T00:00:00Z","timestamp":1792108800000},"content-version":"vor","delay-in-days":93,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["ECCS- 2240388"],"award-info":[{"award-number":["ECCS- 2240388"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001742","name":"United States-Israel Binational Science Foundation","doi-asserted-by":"publisher","award":["2022627"],"award-info":[{"award-number":["2022627"]}],"id":[{"id":"10.13039\/501100001742","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100007297","name":"Office of Naval Research Global","doi-asserted-by":"publisher","award":["N62909-26-1-2000"],"award-info":[{"award-number":["N62909-26-1-2000"]}],"id":[{"id":"10.13039\/100007297","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"DOI":"10.1038\/s41598-026-60705-5","type":"journal-article","created":{"date-parts":[[2026,7,15]],"date-time":"2026-07-15T15:26:37Z","timestamp":1784129197000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Deconvolution of the Mg-Related blue band in GaN via selective chemical treatments"],"prefix":"10.1038","volume":"16","author":[{"given":"Or Haim","family":"Chaulker","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yury","family":"Turkulets","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoram","family":"Shapira","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"R. S.","family":"Goldman","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8053-7339","authenticated-orcid":false,"given":"Ilan","family":"Shalish","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,7,15]]},"reference":[{"key":"60705_CR1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1002\/9781118844779","volume-title":"GaN Transistors for Efficient Power Conversion","author":"A Lidow","year":"2020","unstructured":"Lidow, A., Strydom, J., de Rooij, M. & Reusch, D. GaN Transistors for Efficient Power Conversion 3rd ed., 1\u2013250 (Wiley, 2020). https:\/\/doi.org\/10.1002\/9781118844779.","edition":"3rd ed."},{"key":"60705_CR2","doi-asserted-by":"publisher","first-page":"L2112","DOI":"10.1143\/JJAP.28.L2112","volume":"28","author":"H Amano","year":"1989","unstructured":"Amano, H., Kito, M., Hiramatsu, K. & Akasaki, I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation. Jap. J. Appl. Phys. 28, L2112. https:\/\/doi.org\/10.1143\/JJAP.28.L2112 (1989).","journal-title":"Jap. J. Appl. Phys."},{"key":"60705_CR3","doi-asserted-by":"publisher","first-page":"1258","DOI":"10.1143\/JJAP.31.1258","volume":"31","author":"S Nakamura","year":"1992","unstructured":"Nakamura, S., Iwasa, N., Senoh, M. & Mukai, T. Hole compensation mechanism of p-type GaN films. Jap. J. Appl. Phys. 31, 1258. https:\/\/doi.org\/10.1143\/JJAP.31.1258 (1992).","journal-title":"Jap. J. Appl. Phys."},{"key":"60705_CR4","doi-asserted-by":"publisher","first-page":"478","DOI":"10.1038\/s41928-021-00599-5","volume":"4","author":"Y Cao","year":"2021","unstructured":"Cao, Y., Pomeroy, J. W., Uren, M. J., Yang, F. & Kuball, M. Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution. Nat. Electron. 4, 478. https:\/\/doi.org\/10.1038\/s41928-021-00599-5 (2021).","journal-title":"Nat. Electron."},{"key":"60705_CR5","doi-asserted-by":"publisher","DOI":"10.1063\/1.5125825","volume":"126","author":"S Huang","year":"2019","unstructured":"Huang, S. et al. Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based MOS power transistors. J. Appl. Phys. 126, 164505. https:\/\/doi.org\/10.1063\/1.5125825 (2019).","journal-title":"J. Appl. Phys."},{"key":"60705_CR6","doi-asserted-by":"publisher","DOI":"10.1063\/5.0039564","volume":"129","author":"JT Asubar","year":"2021","unstructured":"Asubar, J. T., Yatabe, Z., Gregusova, D. & Hashizume, T. Controlling surface\/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation. J. Appl. Phys. 129, 121102. https:\/\/doi.org\/10.1063\/5.0039564 (2021).","journal-title":"J. Appl. Phys."},{"key":"60705_CR7","doi-asserted-by":"publisher","first-page":"85","DOI":"10.1016\/j.mssp.2017.11.017","volume":"78","author":"T Hashizume","year":"2018","unstructured":"Hashizume, T., Nishiguchi, K., Kaneki, S., Kuzmik, J. & Yatabe, Z. State of the art on gate insulation and surface passivation for GaN-based power HEMTs. Mater. Sci Semicond. Proces. 78, 85\u201395. https:\/\/doi.org\/10.1016\/j.mssp.2017.11.017 (2018).","journal-title":"Mater. Sci Semicond. Proces."},{"key":"60705_CR8","doi-asserted-by":"publisher","unstructured":"K. Deng, X. Wang, S. Huang, P.Li, Q. Jiang, H. Yin, J. Fan, K. Wei, Y. Zheng, J. Shi, X. Liu.(2018) Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High- https:\/\/doi.org\/10.1016\/j.mssp.2017.11.017","DOI":"10.1016\/j.mssp.2017.11.017"},{"key":"60705_CR9","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202101441","volume":"31","author":"A Henning","year":"2021","unstructured":"Henning, A. et al. Aluminum oxide at the monolayer limit via oxidant-free plasma-assisted atomic layer deposition on GaN. Adv. Funct. Mater. 31, 2101441. https:\/\/doi.org\/10.1002\/adfm.202101441 (2021).","journal-title":"Adv. Funct. Mater."},{"key":"60705_CR10","doi-asserted-by":"publisher","DOI":"10.1063\/5.0048820","volume":"129","author":"KJ Mirrielees","year":"2021","unstructured":"Mirrielees, K. J. et al. Native oxide reconstructions on AlN and GaN (0001) surfaces. J. Appl. Phys. 129, 195304. https:\/\/doi.org\/10.1063\/5.0048820 (2021).","journal-title":"J. Appl. Phys."},{"key":"60705_CR11","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.098003","volume":"57","author":"Y Irokawa","year":"2018","unstructured":"Irokawa, Y. et al. Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001). Jpn. J. Appl. Phys. 57, 098003. https:\/\/doi.org\/10.7567\/JJAP.57.098003 (2018).","journal-title":"Jpn. J. Appl. Phys."},{"key":"60705_CR12","doi-asserted-by":"publisher","first-page":"3851","DOI":"10.1063\/1.1682673","volume":"95","author":"CG Van de Walle","year":"2004","unstructured":"Van de Walle, C. G. & Neugebauer, J. First-principles calculations for defects and impurities: Applications to III-nitrides. J. Appl. Phys. 95, 3851\u20133879. https:\/\/doi.org\/10.1063\/1.1682673 (2004).","journal-title":"J. Appl. Phys."},{"key":"60705_CR13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1868059","volume":"97","author":"MA Reshchikov","year":"2005","unstructured":"Reshchikov, M. A. & Morko\u00e7, H. Luminescence properties of defects in GaN. J. Appl. Phys. 97, 061301. https:\/\/doi.org\/10.1063\/1.1868059 (2005).","journal-title":"J. Appl. Phys."},{"key":"60705_CR14","doi-asserted-by":"publisher","first-page":"1326","DOI":"10.1063\/1.120983","volume":"72","author":"U Kaufmann","year":"1998","unstructured":"Kaufmann, U. et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN. Appl. Phys. Lett. 72, 1326 (1998).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.97.205204","volume":"97","author":"MA Reshchikov","year":"2018","unstructured":"Reshchikov, M. A., Ghimire, P. & Demchenko, D. O. Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN. Phys. Rev. B 97, 205204. https:\/\/doi.org\/10.1103\/PhysRevB.97.205204 (2018).","journal-title":"Phys. Rev. B"},{"key":"60705_CR16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4862928","volume":"115","author":"B Monemar","year":"2014","unstructured":"Monemar, B. et al. Properties of the main Mg-related acceptors in GaN from optical and structural studies. J. Appl. Phys. 115, 053507. https:\/\/doi.org\/10.1063\/1.4862928 (2014).","journal-title":"J. Appl. Phys."},{"key":"60705_CR17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.96.136405","volume":"96","author":"G De Filippis","year":"2006","unstructured":"De Filippis, G., Cataudella, V., Mishchenko, A. S., Perroni, C. A. & Devreese, J. T. Validity of the Franck-Condon Principle in the Optical Spectroscopy: Optical Conductivity of the Fro\u00a8hlich Polaron. Phys. Rev. Lett. 96, 136405. https:\/\/doi.org\/10.1103\/PhysRevLett.96.136405 (2006).","journal-title":"Phys. Rev. Lett."},{"key":"60705_CR18","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.115.029701","volume":"115","author":"DO Demchenko","year":"2015","unstructured":"Demchenko, D. O. & Reshchikov, M. A. Comment on \u201cDetermination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals\u201d. Phys. Rev. Lett. 115, 029701. https:\/\/doi.org\/10.1103\/PhysRevLett.115.029701 (2015).","journal-title":"Phys. Rev. Lett."},{"key":"60705_CR19","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-019-41716-x","volume":"9","author":"TP Weiss","year":"2019","unstructured":"Weiss, T. P. et al. Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements. Sci. Rep. 9, 5385. https:\/\/doi.org\/10.1038\/s41598-019-41716-x (2019).","journal-title":"Sci. Rep."},{"key":"60705_CR20","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-025-97446-w","volume":"15","author":"OH Chaulker","year":"2025","unstructured":"Chaulker, O. H., Turkulets, Y. & Shalish, I. The Mg related GaN blue luminescence deep level and its connection to an MgO surface state. Sci. Rep. 15, 18773. https:\/\/doi.org\/10.1038\/s41598-025-97446-w (2025).","journal-title":"Sci. Rep."},{"key":"60705_CR21","doi-asserted-by":"publisher","first-page":"255706","DOI":"10.1088\/1361-6528\/aabbd6","volume":"29","author":"A-M Siladie","year":"2018","unstructured":"Siladie, A.-M. et al. Dopant radial inhomogeneity in Mg-doped GaN nanowires. Nanotechnology 29, 255706. https:\/\/doi.org\/10.1088\/1361-6528\/aabbd6 (2018).","journal-title":"Nanotechnology"},{"key":"60705_CR22","doi-asserted-by":"publisher","DOI":"10.1063\/5.0080713","volume":"131","author":"EN Aybeke","year":"2022","unstructured":"Aybeke, E. N. et al. Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy. J. Appl. Phys. 131, 075701. https:\/\/doi.org\/10.1063\/5.0080713 (2022).","journal-title":"J. Appl. Phys."},{"key":"60705_CR23","doi-asserted-by":"publisher","first-page":"13890","DOI":"10.1039\/c8cp01470a","volume":"20","author":"PP Michalowski","year":"2018","unstructured":"Michalowski, P. P., Zlotnik, S., Sitek, J., Rosinski, K. & Rudzinskia, M. Oxygen-induced high diffusion rate of magnesium dopant in GaN\/AlGaN based UV LED heterostructures. Phys. Chem. Chem. Phys. 20, 13890. https:\/\/doi.org\/10.1039\/c8cp01470a (2018).","journal-title":"Phys. Chem. Chem. Phys."},{"key":"60705_CR24","doi-asserted-by":"publisher","DOI":"10.1557\/S1092578300004397","author":"V Ramachandran","year":"2000","unstructured":"Ramachandran, V., Feenstra, R. M., Northrup, J. E. & Greve, D. W. Surface activity of magnesium during GaN molecular beam epitaxial growth. MRS Internet J. Nitride Semicond. Res. https:\/\/doi.org\/10.1557\/S1092578300004397 (2000).","journal-title":"MRS Internet J. Nitride Semicond. Res."},{"key":"60705_CR25","doi-asserted-by":"publisher","first-page":"1740","DOI":"10.1063\/1.126152","volume":"76","author":"LK Li","year":"2000","unstructured":"Li, L. K., Jurkovic, M. J., Wang, W. I., Van Hove, J. M. & Chow, P. P. Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy. Appl. Phys. Lett. 76, 1740. https:\/\/doi.org\/10.1063\/1.126152 (2000).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR26","doi-asserted-by":"publisher","first-page":"285","DOI":"10.1063\/1.1339255","volume":"78","author":"AJ Ptak","year":"2001","unstructured":"Ptak, A. J., Myers, T. H., Romano, L. T., Van de Walle, C. G. & Northrup, J. E. Magnesium incorporation in GaN grown by molecular-beam epitaxy. Appl. Phys. Lett. 78, 285. https:\/\/doi.org\/10.1063\/1.1339255 (2001).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.73.155337","volume":"73","author":"QA Sun","year":"2006","unstructured":"Sun, Q. A., Selloni, A., Myers, T. H. & Doolittle, W. A. Energetics of Mg incorporation at GaN(0001) and GaN(000\u20131) surfaces. Phys. Rev. B 73, 155337. https:\/\/doi.org\/10.1103\/PhysRevB.73.155337 (2006).","journal-title":"Phys. Rev. B"},{"key":"60705_CR28","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1016\/j.surfrep.2017.05.001","volume":"72","author":"VM Bermudez","year":"2017","unstructured":"Bermudez, V. M. The fundamental surface science of wurtzite gallium nitride. Surf. Sci. Rep. 72, 147. https:\/\/doi.org\/10.1016\/j.surfrep.2017.05.001 (2017).","journal-title":"Surf. Sci. Rep."},{"key":"60705_CR29","doi-asserted-by":"publisher","first-page":"431","DOI":"10.1063\/1.1580195","volume":"94","author":"T Hashizume","year":"2003","unstructured":"Hashizume, T. J. Appl. Phys. 94, 431. https:\/\/doi.org\/10.1063\/1.1580195 (2003).","journal-title":"J. Appl. Phys."},{"key":"60705_CR30","doi-asserted-by":"publisher","first-page":"1810","DOI":"10.1002\/pssb.201046531","volume":"248","author":"T Schmidt","year":"2011","unstructured":"Schmidt, T. et al. Mg and Si dopant incorporation and segregation in GaN. Phys. Status Solidi B 248, 1810. https:\/\/doi.org\/10.1002\/pssb.201046531 (2011).","journal-title":"Phys. Status Solidi B"},{"key":"60705_CR31","doi-asserted-by":"publisher","first-page":"7281","DOI":"10.1143\/JJAP.47.7281","volume":"47","author":"H Suto","year":"2008","unstructured":"Suto, H. et al. Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy. Jpn. J. Appl. Phys. 47, 7281. https:\/\/doi.org\/10.1143\/JJAP.47.7281 (2008).","journal-title":"Jpn. J. Appl. Phys."},{"key":"60705_CR32","doi-asserted-by":"publisher","DOI":"10.1063\/1.2136224","volume":"87","author":"ME Hawkridge","year":"2005","unstructured":"Hawkridge, M. E. & Cherns, D. Oxygen segregation to dislocations in GaN Available to Purchase. Appl. Phys. Lett. 87, 221903. https:\/\/doi.org\/10.1063\/1.2136224 (2005).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR33","doi-asserted-by":"publisher","first-page":"15201","DOI":"10.1039\/C5CP00540J","volume":"17","author":"M Mishra","year":"2015","unstructured":"Mishra, M. et al. Pit assisted oxygen chemisorption on GaN surfaces. Phys. Chem. Chem. Phys. 17, 15201. https:\/\/doi.org\/10.1039\/C5CP00540J (2015).","journal-title":"Phys. Chem. Chem. Phys."},{"key":"60705_CR34","doi-asserted-by":"publisher","DOI":"10.1116\/1.4807904","volume":"31","author":"BS Eller","year":"2013","unstructured":"Eller, B. S., Yang, J. L. & Nemanich, R. J. Electronic surface and dielectric interface states on GaN and AlGaN. J. Vac. Sci. Technol. A 31, 050807. https:\/\/doi.org\/10.1116\/1.4807904 (2013).","journal-title":"J. Vac. Sci. Technol. A"},{"key":"60705_CR35","doi-asserted-by":"publisher","DOI":"10.1063\/1.2722731","volume":"101","author":"CG Van de Walle","year":"2007","unstructured":"Van de Walle, C. G. & Segev, D. Microscopic origins of surface states on nitride surfaces. J. Appl. Phys. 101, 081704. https:\/\/doi.org\/10.1063\/1.2722731 (2007).","journal-title":"J. Appl. Phys."},{"key":"60705_CR36","doi-asserted-by":"publisher","first-page":"1217","DOI":"10.1016\/j.mssp.2013.01.027","volume":"16","author":"HS Oon","year":"2013","unstructured":"Oon, H. S. & Cheong, K. Y. Recent development of gallium oxide thin film on GaN. Mater. Sci. Semicond. Process. 16, 1217. https:\/\/doi.org\/10.1016\/j.mssp.2013.01.027 (2013).","journal-title":"Mater. Sci. Semicond. Process."},{"key":"60705_CR37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.88.165201","volume":"88","author":"AJ Jackson","year":"2013","unstructured":"Jackson, A. J. & Walsh, A. Oxidation of GaN: An ab initio thermodynamic approach. Phys. Rev. B 88, 165201. https:\/\/doi.org\/10.1103\/PhysRevB.88.165201 (2013).","journal-title":"Phys. Rev. B"},{"key":"60705_CR38","doi-asserted-by":"publisher","first-page":"739","DOI":"10.1557\/PROC-395-739","volume":"395","author":"SW King","year":"1995","unstructured":"King, S. W. et al. Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces. Mater. Res. Soc. Symp. 395, 739. https:\/\/doi.org\/10.1557\/PROC-395-739 (1995).","journal-title":"Mater. Res. Soc. Symp."},{"key":"60705_CR39","doi-asserted-by":"publisher","first-page":"5248","DOI":"10.1063\/1.368814","volume":"84","author":"SW King","year":"1998","unstructured":"King, S. W. et al. Cleaning of AlN and GaN surfaces. J. Appl. Phys. 84, 5248. https:\/\/doi.org\/10.1063\/1.368814 (1998).","journal-title":"J. Appl. Phys."},{"key":"60705_CR40","doi-asserted-by":"publisher","unstructured":"K.N. Lee, S.M. Donovan, B. Gila, M. Overberg, J.D. Mackenzie, C.R. Abernathy, R.G. Wilson. J. Electrochem. Surface chemical treatment for the cleaning of AlN and GaN. Soc. 147, 3087 .https:\/\/doi.org\/10.1149\/1.1393860(2000)","DOI":"10.1149\/1.1393860"},{"key":"60705_CR41","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1016\/S0169-4332(02)00889-9","volume":"202","author":"J Zhou","year":"2002","unstructured":"Zhou, J. et al. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy. Appl. Surf. Sci. 202, 131. https:\/\/doi.org\/10.1016\/S0169-4332(02)00889-9 (2002).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR42","doi-asserted-by":"publisher","first-page":"1949","DOI":"10.1134\/1.1809437","volume":"46","author":"OE Tereshchenko","year":"2004","unstructured":"Tereshchenko, O. E. et al. Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity. Phys. Solid State 46, 1949. https:\/\/doi.org\/10.1134\/1.1809437 (2004).","journal-title":"Phys. Solid State"},{"key":"60705_CR43","doi-asserted-by":"publisher","first-page":"1247","DOI":"10.1016\/j.susc.2010.04.004","volume":"604","author":"AN Hattori","year":"2010","unstructured":"Hattori, A. N. et al. Chemical etchant dependence of surface structure and morphology on GaN (0001) substrates. Surf. Sci. 604, 1247. https:\/\/doi.org\/10.1016\/j.susc.2010.04.004 (2010).","journal-title":"Surf. Sci."},{"key":"60705_CR44","doi-asserted-by":"publisher","first-page":"498","DOI":"10.1016\/j.apsusc.2014.11.179","volume":"327","author":"SJ Wilkins","year":"2015","unstructured":"Wilkins, S. J., Paskova, T. & Ivanisevic, A. Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids. Appl. Surf. Sci. 327, 498. https:\/\/doi.org\/10.1016\/j.apsusc.2014.11.179 (2015).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR45","doi-asserted-by":"publisher","first-page":"1687","DOI":"10.1002\/cphc.201500105","volume":"16","author":"SJ Wilkins","year":"2015","unstructured":"Wilkins, S. J., Paskova, T., Reynolds, C. L. & Ivanisevic, A. Comparison of the stability of functionalized GaN and GaP. ChemPhysChem 16, 1687. https:\/\/doi.org\/10.1002\/cphc.201500105 (2015).","journal-title":"ChemPhysChem"},{"key":"60705_CR46","doi-asserted-by":"publisher","DOI":"10.7567\/1882-0786\/ab14cb","volume":"12","author":"J Chen","year":"2019","unstructured":"Chen, J. et al. Cathodoluminescene study of Mg implanted GaN: The impact of dislocation on Mg diffusion. Appl. Phys. Express 12, 051010. https:\/\/doi.org\/10.7567\/1882-0786\/ab14cb (2019).","journal-title":"Appl. Phys. Express"},{"key":"60705_CR47","doi-asserted-by":"publisher","DOI":"10.1063\/1.5097767","volume":"114","author":"S Usami","year":"2019","unstructured":"Usami, S. et al. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p\u2013n diodes and its effect on reverse leakage current. Appl. Phys. Lett. 114, 232105. https:\/\/doi.org\/10.1063\/1.5097767 (2019).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR48","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.17.024019","volume":"17","author":"J L\u00e4hnemann","year":"2022","unstructured":"L\u00e4hnemann, J. et al. Carrier diffusion in GaN: A cathodoluminescence study. III. Nature of nonradiative recombination at threading dislocations. Phys. Rev. Appl. 17, 024019. https:\/\/doi.org\/10.1103\/PhysRevApplied.17.024019 (2022).","journal-title":"Phys. Rev. Appl."},{"key":"60705_CR49","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2023.102834","volume":"38","author":"Y Turkulets","year":"2023","unstructured":"Turkulets, Y. et al. The GaN(0001) yellow-luminescence-related surface state and its interaction with air. Surf. Interfaces 38, 102834. https:\/\/doi.org\/10.1016\/j.surfin.2023.102834 (2023).","journal-title":"Surf. Interfaces"},{"key":"60705_CR50","doi-asserted-by":"publisher","first-page":"112","DOI":"10.1016\/S0169-4332(99)00593-0","volume":"158","author":"HB Yao","year":"2000","unstructured":"Yao, H. B., Li, Y. & Wee, A. T. S. An XPS investigation of the oxidationrcorrosion of melt-spun Mg. Appl. Surf. Sci. 158, 112. https:\/\/doi.org\/10.1016\/S0169-4332(99)00593-0 (2000).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR51","doi-asserted-by":"publisher","first-page":"75","DOI":"10.3390\/ma10010075","volume":"10","author":"V Rheinheimer","year":"2017","unstructured":"Rheinheimer, V. et al. XPS study on the stability and transformation of hydrate and carbonate phases within MgO systems. Materials 10, 75. https:\/\/doi.org\/10.3390\/ma10010075 (2017).","journal-title":"Materials"},{"key":"60705_CR52","doi-asserted-by":"publisher","DOI":"10.1116\/1.4975595","volume":"35","author":"A Le Febvrier","year":"2017","unstructured":"Le Febvrier, A., Jensen, J. & Eklund, P. Wet-cleaning of MgO(001): Modification of surface chemistry and effects on thin film growth investigated by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy. J. Vac. Sci. Technol. A 35, 021407. https:\/\/doi.org\/10.1116\/1.4975595 (2017).","journal-title":"J. Vac. Sci. Technol. A"},{"key":"60705_CR53","doi-asserted-by":"publisher","first-page":"2602","DOI":"10.1063\/1.125091","volume":"75","author":"NJ Watkins","year":"1999","unstructured":"Watkins, N. J., Wicks, G. W. & Gao, Y. Oxidation study of GaN using x-ray photoemission spectroscopy. Appl. Phys. Lett. 75, 2602. https:\/\/doi.org\/10.1063\/1.125091 (1999).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR54","doi-asserted-by":"publisher","first-page":"9748","DOI":"10.1103\/PhysRevB.59.9748","volume":"59","author":"I Shalish","year":"1999","unstructured":"Shalish, I. et al. Yellow luminescence and related deep levels in unitentionally doped GaN films. Phys. Rev. B 59, 9748. https:\/\/doi.org\/10.1103\/PhysRevB.59.9748 (1999).","journal-title":"Phys. Rev. B"},{"key":"60705_CR55","doi-asserted-by":"publisher","first-page":"987","DOI":"10.1063\/1.1288813","volume":"77","author":"I Shalish","year":"2000","unstructured":"Shalish, I. et al. Yellow luminescence and Fermi level pinning in GaN films. Appl. Phys. Lett. 77, 987. https:\/\/doi.org\/10.1063\/1.1288813 (2000).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR56","doi-asserted-by":"publisher","DOI":"10.1063\/1.4861413","volume":"115","author":"R Gurwitz","year":"2014","unstructured":"Gurwitz, R., Cohen, R. & Shalish, I. Interaction of light with the ZnO surface: Photon induced oxygen \u201cbreathing\u201d, oxygen vacancies, persistent photoconductivity, and persistent photovoltage. J. Appl. Phys. 115, 033701. https:\/\/doi.org\/10.1063\/1.4861413 (2014).","journal-title":"J. Appl. Phys."},{"key":"60705_CR57","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfin.2023.102834","volume":"38","author":"Y Turkulets","year":"2023","unstructured":"Turkulets, Y. et al. The GaN(0001) yellow-luminescence-related surface state and its interaction with air. Surf. Interface Anal. 38, 102834. https:\/\/doi.org\/10.1016\/j.surfin.2023.102834 (2023).","journal-title":"Surf. Interface Anal."},{"key":"60705_CR58","doi-asserted-by":"publisher","first-page":"5248","DOI":"10.1063\/1.368814","volume":"84","author":"SW King","year":"1998","unstructured":"King, S. W. et al. Cleaning of AlN and GaN surfaces. J. Appl. Phys. 84, 5248\u20135260. https:\/\/doi.org\/10.1063\/1.368814 (1998).","journal-title":"J. Appl. Phys."},{"key":"60705_CR59","doi-asserted-by":"publisher","first-page":"3087","DOI":"10.1149\/1.1393860","volume":"147","author":"KN Lee","year":"2000","unstructured":"Lee, K. N. et al. Surface chemical treatment for the cleaning of AlN and GaN surfaces. J. Electrochem. Soc. 147, 3087. https:\/\/doi.org\/10.1149\/1.1393860 (2000).","journal-title":"J. Electrochem. Soc."},{"key":"60705_CR60","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1016\/S0169-4332(02)00889-9","volume":"202","author":"J Zhou","year":"2002","unstructured":"Zhou, J. et al. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy. Appl. Surf. Sci. 202, 131. https:\/\/doi.org\/10.1016\/S0169-4332(02)00889-9 (2002).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR61","doi-asserted-by":"publisher","first-page":"1281","DOI":"10.1002\/crat.200711019","volume":"42","author":"S Krukowski","year":"2007","unstructured":"Krukowski, S. et al. Modelling the growth of nitrides in ammonia-rich environment. Cryst. Res. Technol. 42, 1281. https:\/\/doi.org\/10.1002\/crat.200711019 (2007).","journal-title":"Cryst. Res. Technol."},{"key":"60705_CR62","doi-asserted-by":"publisher","first-page":"1391","DOI":"10.1016\/j.jcrysgro.2007.11.099","volume":"310","author":"S Krukowski","year":"2008","unstructured":"Krukowski, S., Kempisty, P. & Str\u0105k, P. Role of chlorine in the dynamics of GaN(0 0 0 1) surface during HVPE GaN growth\u2014Ab initio study. J. Cryst. Growth 310, 1391. https:\/\/doi.org\/10.1016\/j.jcrysgro.2007.11.099 (2008).","journal-title":"J. Cryst. Growth"},{"key":"60705_CR63","doi-asserted-by":"publisher","first-page":"204","DOI":"10.1063\/1.1430024","volume":"80","author":"KA Rickert","year":"2002","unstructured":"Rickert, K. A., Ellis, A. B., Himpsel, F. J., Sun, J. & Kuech, T. F. n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy. Appl. Phys. Lett. 80, 204. https:\/\/doi.org\/10.1063\/1.1430024 (2002).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR64","doi-asserted-by":"publisher","DOI":"10.1116\/6.0002255","volume":"41","author":"DC Messina","year":"2023","unstructured":"Messina, D. C. et al. Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange. J. Vac. Sci. Technol. A 41, 022603. https:\/\/doi.org\/10.1116\/6.0002255 (2023).","journal-title":"J. Vac. Sci. Technol. A"},{"key":"60705_CR65","doi-asserted-by":"publisher","DOI":"10.1116\/6.0002452","volume":"41","author":"L Hamraoui","year":"2023","unstructured":"Hamraoui, L. et al. Atomic layer etching of gallium nitride using fluorine-based chemistry. J. Vac. Sci. Technol. A 41, 032602. https:\/\/doi.org\/10.1116\/6.0002452 (2023).","journal-title":"J. Vac. Sci. Technol. A"},{"key":"60705_CR66","doi-asserted-by":"publisher","first-page":"3532","DOI":"10.1063\/1.1329330","volume":"77","author":"P Visconti","year":"2000","unstructured":"Visconti, P. et al. Dislocation density in GaN determined by photoelectrochemical and hot-wet etching. Appl. Phys. Lett. 77, 3532 (2000).","journal-title":"Appl. Phys. Lett."},{"key":"60705_CR67","doi-asserted-by":"publisher","first-page":"494","DOI":"10.1002\/1521-396X(200212)194:2<494::AID-PSSA494>3.0.CO;2-#","volume":"194","author":"RP Vaudo","year":"2002","unstructured":"Vaudo, R. P. et al. GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality. Phys. Stat. Sol. 194, 494 (2002).","journal-title":"Phys. Stat. Sol."},{"key":"60705_CR68","doi-asserted-by":"publisher","first-page":"H117","DOI":"10.1149\/2.039202jes","volume":"159","author":"Y Jung","year":"2012","unstructured":"Jung, Y. et al. Chemical etch characteristics of N-face and Ga-face GaN by phosphoric acid and potassium hydroxide solutions. J. Electrochem. Soc. 159, H117. https:\/\/doi.org\/10.1149\/2.039202jes (2012).","journal-title":"J. Electrochem. Soc."},{"key":"60705_CR69","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2021.152309","volume":"582","author":"S Benrabah","year":"2022","unstructured":"Benrabah, S. et al. H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces. Appl. Surf. Sci. 582, 152309. https:\/\/doi.org\/10.1016\/j.apsusc.2021.152309 (2022).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR70","doi-asserted-by":"publisher","DOI":"10.1063\/1.4985345","volume":"121","author":"M Reiner","year":"2017","unstructured":"Reiner, M. et al. Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlxGa1-xN surface donor modification by fluorination Available to Purchase. J. Appl. Phys. 121, 225704. https:\/\/doi.org\/10.1063\/1.4985345 (2017).","journal-title":"J. Appl. Phys."},{"key":"60705_CR71","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2024.159941","volume":"659","author":"A Matsuda","year":"2024","unstructured":"Matsuda, A. et al. NF3 and F2 gas fluorination of GaN surface and Pt\/GaN interface analyzed by hard X-ray photoelectron spectroscopy. Appl. Surf. Sci. 659, 159941. https:\/\/doi.org\/10.1016\/j.apsusc.2024.159941 (2024).","journal-title":"Appl. Surf. Sci."},{"key":"60705_CR72","unstructured":"Rumble, J. R., Ed. CRC Handbook of Chemistry and Physics, 105th ed.; CRC Press\/Taylor & Francis: Boca Raton, FL, 2024. Section 4, \"Physical Constants of Inorganic Compounds,\" entry for Magnesium fluoride (MgF\u2082)."}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41598-026-60705-5","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-026-60705-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-026-60705-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,16]],"date-time":"2026-10-16T04:09:11Z","timestamp":1792123751000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41598-026-60705-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,15]]},"references-count":72,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2026,12]]}},"alternative-id":["60705"],"URL":"https:\/\/doi.org\/10.1038\/s41598-026-60705-5","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,15]]},"assertion":[{"value":"29 March 2026","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"30 June 2026","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 July 2026","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Declarations"}}],"article-number":"32517"}}