{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,6]],"date-time":"2026-10-06T17:55:35Z","timestamp":1791309335958,"version":"4.3.1"},"reference-count":40,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2014,8,11]],"date-time":"2014-08-11T00:00:00Z","timestamp":1407715200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0"},{"start":{"date-parts":[[2014,8,11]],"date-time":"2014-08-11T00:00:00Z","timestamp":1407715200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"DOI":"10.1038\/srep05951","type":"journal-article","created":{"date-parts":[[2014,8,11]],"date-time":"2014-08-11T09:12:25Z","timestamp":1407748345000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":151,"title":["Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions"],"prefix":"10.1038","volume":"4","author":[{"given":"He","family":"Tian","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhen","family":"Tan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Can","family":"Wu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaomu","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mohammad Ali","family":"Mohammad","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dan","family":"Xie","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yi","family":"Yang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lain-Jong","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Xu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tian-Ling","family":"Ren","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2014,8,11]]},"reference":[{"key":"BFsrep05951_CR1","doi-asserted-by":"publisher","first-page":"183","DOI":"10.1038\/nmat1849","volume":"6","author":"AK Geim","year":"2007","unstructured":"Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183\u2013191 (2007).","journal-title":"Nat. Mater."},{"key":"BFsrep05951_CR2","doi-asserted-by":"publisher","first-page":"666","DOI":"10.1126\/science.1102896","volume":"306","author":"K Novoselov","year":"2004","unstructured":"Novoselov, K. et al. Electric field effect in atomically thin carbon films. Science 306, 666\u2013669 (2004).","journal-title":"Science"},{"key":"BFsrep05951_CR3","doi-asserted-by":"publisher","first-page":"351","DOI":"10.1016\/j.ssc.2008.02.024","volume":"146","author":"KI Bolotin","year":"2008","unstructured":"Bolotin, K. I. et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 146, 351\u2013355 (2008).","journal-title":"Solid State Commun."},{"key":"BFsrep05951_CR4","doi-asserted-by":"publisher","first-page":"385","DOI":"10.1126\/science.1157996","volume":"321","author":"C Lee","year":"2008","unstructured":"Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385\u2013388 (2008).","journal-title":"Science"},{"key":"BFsrep05951_CR5","doi-asserted-by":"publisher","first-page":"902","DOI":"10.1021\/nl0731872","volume":"8","author":"AA Balandin","year":"2008","unstructured":"Balandin, A. A. et al. Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902\u2013907 (2008).","journal-title":"Nano Lett."},{"key":"BFsrep05951_CR6","doi-asserted-by":"publisher","first-page":"2272","DOI":"10.1039\/c2nr11572g","volume":"4","author":"H Tian","year":"2012","unstructured":"Tian, H. et al. Single-layer graphene sound-emitting devices: experiments and modeling. Nanoscale 4, 2272\u20132277 (2012).","journal-title":"Nanoscale"},{"key":"BFsrep05951_CR7","doi-asserted-by":"publisher","first-page":"1229","DOI":"10.1126\/science.1150878","volume":"319","author":"X Li","year":"2008","unstructured":"Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229\u20131232 (2008).","journal-title":"Science"},{"key":"BFsrep05951_CR8","doi-asserted-by":"publisher","first-page":"206803","DOI":"10.1103\/PhysRevLett.100.206803","volume":"100","author":"X Wang","year":"2008","unstructured":"Wang, X. et al. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. Phys. Rev. Lett. 100, 206803 (2008).","journal-title":"Phys. Rev. Lett."},{"key":"BFsrep05951_CR9","doi-asserted-by":"publisher","first-page":"216802","DOI":"10.1103\/PhysRevLett.99.216802","volume":"99","author":"EV Castro","year":"2007","unstructured":"Castro, E. V. et al. Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett. 99, 216802 (2007).","journal-title":"Phys. Rev. Lett."},{"key":"BFsrep05951_CR10","doi-asserted-by":"publisher","first-page":"820","DOI":"10.1038\/nature08105","volume":"459","author":"Y Zhang","year":"2009","unstructured":"Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820\u2013823 (2009).","journal-title":"Nature"},{"key":"BFsrep05951_CR11","doi-asserted-by":"publisher","first-page":"457","DOI":"10.1038\/nature06016","volume":"448","author":"DA Dikin","year":"2007","unstructured":"Dikin, D. A. et al. Preparation and characterization of graphene oxide paper. Nature 448, 457\u2013460 (2007).","journal-title":"Nature"},{"key":"BFsrep05951_CR12","doi-asserted-by":"publisher","first-page":"890","DOI":"10.1039\/C2NR33455K","volume":"5","author":"H Tian","year":"2013","unstructured":"Tian, H. et al. A novel flexible capacitive touch pad based on graphene oxide film. Nanoscale 5, 890\u2013894 (2013).","journal-title":"Nanoscale"},{"key":"BFsrep05951_CR13","doi-asserted-by":"publisher","first-page":"10451","DOI":"10.1073\/pnas.0502848102","volume":"102","author":"K Novoselov","year":"2005","unstructured":"Novoselov, K. et al. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U. S. A. 102, 10451\u201310453 (2005).","journal-title":"Proc. Natl. Acad. Sci. U. S. A."},{"key":"BFsrep05951_CR14","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1038\/nnano.2013.31","volume":"8","author":"B Radisavljevic","year":"2013","unstructured":"Radisavljevic, B. & Kis, A. Reply to \u2018Measurement of mobility in dual-gated MoS2 transistors\u2019. Nat. Nanotechnol. 8, 147\u2013148 (2013).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR15","doi-asserted-by":"publisher","first-page":"74","DOI":"10.1021\/nn2024557","volume":"6","author":"Z Yin","year":"2011","unstructured":"Yin, Z. et al. Single-layer MoS2 phototransistors. ACS Nano 6, 74\u201380 (2011).","journal-title":"ACS Nano"},{"key":"BFsrep05951_CR16","doi-asserted-by":"publisher","first-page":"4013","DOI":"10.1021\/nl301335q","volume":"12","author":"J Pu","year":"2012","unstructured":"Pu, J. et al. Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett. 12, 4013\u20134017 (2012).","journal-title":"Nano Lett."},{"key":"BFsrep05951_CR17","doi-asserted-by":"publisher","first-page":"764","DOI":"10.1038\/nmat3386","volume":"11","author":"S Haigh","year":"2012","unstructured":"Haigh, S. et al. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Nat. Mater. 11, 764\u2013767 (2012).","journal-title":"Nat. Mater."},{"key":"BFsrep05951_CR18","doi-asserted-by":"publisher","first-page":"947","DOI":"10.1126\/science.1218461","volume":"335","author":"L Britnell","year":"2012","unstructured":"Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947\u2013950 (2012).","journal-title":"Science"},{"key":"BFsrep05951_CR19","doi-asserted-by":"publisher","first-page":"100","DOI":"10.1038\/nnano.2012.224","volume":"8","author":"T Georgiou","year":"2012","unstructured":"Georgiou, T. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8, 100\u2013103 (2012).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR20","unstructured":"Zhang, W. et al. Ultrahigh-Gain Phototransistors Based on Graphene-MoS2 Heterostructures. arXiv preprint arXiv:13021230 (2013)."},{"key":"BFsrep05951_CR21","doi-asserted-by":"publisher","first-page":"246","DOI":"10.1038\/nmat3518","volume":"12","author":"WJ Yu","year":"2012","unstructured":"Yu, W. J. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246\u2013252 (2012).","journal-title":"Nat. Mater."},{"key":"BFsrep05951_CR22","doi-asserted-by":"publisher","first-page":"952","DOI":"10.1038\/nnano.2013.219","volume":"8","author":"WJ Yu","year":"2013","unstructured":"Yu, W. J. et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 8, 952\u2013958 (2013).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR23","doi-asserted-by":"publisher","first-page":"3246","DOI":"10.1021\/nn3059136","volume":"7","author":"S Bertolazzi","year":"2013","unstructured":"Bertolazzi, S., Krasnozhon, D. & Kis, A. Nonvolatile memory cells based on MoS2\/graphene heterostructures. ACS Nano 7, 3246\u20133252 (2013).","journal-title":"ACS Nano"},{"key":"BFsrep05951_CR24","doi-asserted-by":"publisher","first-page":"1624","DOI":"10.1038\/ncomms2652","volume":"4","author":"MS Choi","year":"2013","unstructured":"Choi, M. S. et al. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun. 4, 1624 (2013).","journal-title":"Nat. Commun."},{"key":"BFsrep05951_CR25","doi-asserted-by":"publisher","first-page":"826","DOI":"10.1038\/nnano.2013.206","volume":"8","author":"K Roy","year":"2013","unstructured":"Roy, K. et al. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8, 826\u2013830 (2013).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR26","doi-asserted-by":"publisher","first-page":"246","DOI":"10.1038\/nmat3518","volume":"12","author":"WJ Yu","year":"2013","unstructured":"Yu, W. J. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246\u2013252 (2013).","journal-title":"Nat. Mater."},{"key":"BFsrep05951_CR27","doi-asserted-by":"publisher","first-page":"106801","DOI":"10.1103\/PhysRevLett.89.106801","volume":"89","author":"S Heinze","year":"2002","unstructured":"Heinze, S. et al. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89, 106801 (2002).","journal-title":"Phys. Rev. Lett."},{"key":"BFsrep05951_CR28","doi-asserted-by":"publisher","first-page":"1048","DOI":"10.1109\/TED.2006.871842","volume":"53","author":"JM Larson","year":"2006","unstructured":"Larson, J. M. & Snyder, J. P. Overview and status of metal S\/D Schottky-barrier MOSFET technology. IEEE Trans. Electron Devices 53, 1048\u20131058 (2006).","journal-title":"IEEE Trans. Electron Devices"},{"key":"BFsrep05951_CR29","doi-asserted-by":"publisher","first-page":"1140","DOI":"10.1126\/science.1220527","volume":"336","author":"H Yang","year":"2012","unstructured":"Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140\u20131143 (2012).","journal-title":"Science"},{"key":"BFsrep05951_CR30","doi-asserted-by":"crossref","unstructured":"Cheung, K. On the 60\u2005mV\/dec@ 300\u2005K limit for MOSFET subthreshold swing. Int. Symp. VLSI Technol., Syst., Appl. (VLSI-TSA), pp.72\u201373 (2010).","DOI":"10.1109\/VTSA.2010.5488941"},{"key":"BFsrep05951_CR31","doi-asserted-by":"publisher","first-page":"815","DOI":"10.1038\/nmat3687","volume":"12","author":"B Radisavljevic","year":"2013","unstructured":"Radisavljevic, B. & Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat. Mater. 12, 815\u2013820 (2013).","journal-title":"Nat. Mater."},{"key":"BFsrep05951_CR32","doi-asserted-by":"publisher","first-page":"1538","DOI":"10.1021\/nl2043612","volume":"12","author":"K-K Liu","year":"2012","unstructured":"Liu, K.-K. et al. Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Lett. 12, 1538\u20131544 (2012).","journal-title":"Nano Lett."},{"key":"BFsrep05951_CR33","doi-asserted-by":"publisher","first-page":"4674","DOI":"10.1021\/nl302015v","volume":"12","author":"H Wang","year":"2012","unstructured":"Wang, H. et al. Integrated Circuits Based on Bilayer MoS2 Transistors. Nano Lett. 12, 4674\u20134680 (2012).","journal-title":"Nano Lett."},{"key":"BFsrep05951_CR34","doi-asserted-by":"publisher","first-page":"7707","DOI":"10.1021\/nn202852j","volume":"5","author":"S Ghatak","year":"2011","unstructured":"Ghatak, S., Pal, A. N. & Ghosh, A. Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors. ACS Nano 5, 7707\u20137712 (2011).","journal-title":"ACS Nano"},{"key":"BFsrep05951_CR35","doi-asserted-by":"publisher","first-page":"206","DOI":"10.1038\/nnano.2008.58","volume":"3","author":"J-H Chen","year":"2008","unstructured":"Chen, J.-H., Jang, C., Xiao, S., Ishigami, M. & Fuhrer, M. S. Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nat. Nanotechnol. 3, 206\u2013209 (2008).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR36","doi-asserted-by":"publisher","first-page":"2571","DOI":"10.1021\/nl900725u","volume":"9","author":"F Chen","year":"2009","unstructured":"Chen, F., Xia, J., Ferry, D. K. & Tao, N. Dielectric Screening Enhanced Performance in Graphene FET. Nano Lett. 9, 2571\u20132574 (2009).","journal-title":"Nano Lett."},{"key":"BFsrep05951_CR37","doi-asserted-by":"publisher","first-page":"2078","DOI":"10.1109\/TED.2008.926593","volume":"55","author":"J Kedzierski","year":"2008","unstructured":"Kedzierski, J. et al. Epitaxial graphene transistors on SiC substrates. IEEE Trans. Electron Devices 55, 2078\u20132085 (2008).","journal-title":"IEEE Trans. Electron Devices"},{"key":"BFsrep05951_CR38","doi-asserted-by":"publisher","first-page":"115317","DOI":"10.1103\/PhysRevB.85.115317","volume":"85","author":"K Kaasbjerg","year":"2012","unstructured":"Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS_ {2} from first principles. Phys. Rev. B 85, 115317 (2012).","journal-title":"Phys. Rev. B"},{"key":"BFsrep05951_CR39","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1038\/nnano.2010.279","volume":"6","author":"B Radisavljevic","year":"2011","unstructured":"Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147\u2013150 (2011).","journal-title":"Nat. Nanotechnol."},{"key":"BFsrep05951_CR40","doi-asserted-by":"publisher","first-page":"136805","DOI":"10.1103\/PhysRevLett.98.136805","volume":"98","author":"D Jena","year":"2007","unstructured":"Jena, D. & Konar, A. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. Phys. Rev. Lett. 98, 136805 (2007).","journal-title":"Phys. Rev. Lett."}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/srep05951","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/srep05951.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/srep05951.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,1,6]],"date-time":"2023-01-06T07:56:23Z","timestamp":1672991783000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/srep05951"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,8,11]]},"references-count":40,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2014,12,17]]}},"alternative-id":["BFsrep05951"],"URL":"https:\/\/doi.org\/10.1038\/srep05951","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014,8,11]]},"assertion":[{"value":"22 April 2014","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 July 2014","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"11 August 2014","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing financial interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"5951"}}