{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T18:57:41Z","timestamp":1791399461633,"version":"4.3.3"},"reference-count":44,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2016,7,28]],"date-time":"2016-07-28T00:00:00Z","timestamp":1469664000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2016,7,28]],"date-time":"2016-07-28T00:00:00Z","timestamp":1469664000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor\u2013liquid\u2013solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200\u2009\u00b0C. The needle-shaped Si nanowires, which have a core\u2013shell structure that consists of a single-crystalline Si core along the &lt;111&gt; direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300\u2009\u00b0C, which disturbs the epitaxial growth of Si nanowires.<\/jats:p>","DOI":"10.1038\/srep30608","type":"journal-article","created":{"date-parts":[[2016,7,28]],"date-time":"2016-07-28T12:08:41Z","timestamp":1469707721000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":25,"title":["Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process"],"prefix":"10.1038","volume":"6","author":[{"given":"Takeshi","family":"Ishiyama","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuhei","family":"Nakagawa","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Toshiki","family":"Wakamatsu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2016,7,28]]},"reference":[{"key":"BFsrep30608_CR1","doi-asserted-by":"publisher","first-page":"57","DOI":"10.1038\/nature01141","volume":"420","author":"LJ Lauhon","year":"2002","unstructured":"Lauhon, L. J., Gudiksen, M. S., Wang, D. & Lieber, C. M. Epitaxial core\u2013shell and core\u2013multishell nanowire heterostructures. Nature 420, 57\u201361 (2002).","journal-title":"Nature"},{"key":"BFsrep30608_CR2","doi-asserted-by":"publisher","first-page":"2964","DOI":"10.1021\/nl0619397","volume":"6","author":"LT Ngo","year":"2006","unstructured":"Ngo, L. T. et al. Ultimate-strength germanium nanowires. Nano Lett. 6, 2964\u20132968 (2006).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR3","doi-asserted-by":"publisher","first-page":"241","DOI":"10.1038\/nature01353","volume":"421","author":"X Duan","year":"2003","unstructured":"Duan, X., Huang, Y., Agarwal, R. & Lieber, C. M. Single-nanowire electrically driven lasers. Nature 421, 241\u2013245 (2003).","journal-title":"Nature"},{"key":"BFsrep30608_CR4","doi-asserted-by":"publisher","first-page":"85","DOI":"10.1002\/smll.200500181","volume":"2","author":"V Schmidt","year":"2006","unstructured":"Schmidt,V. et al. Realization of a silicon nanowire vertical surround-gate field-effect transistor. Small 2, 85\u201388 (2006).","journal-title":"Small"},{"key":"BFsrep30608_CR5","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1021\/nl025875l","volume":"3","author":"Y Cui","year":"2003","unstructured":"Cui, Y., Zhong, Z., Wang, D., Wang, W. U. & Lieber, C. M. High performance silicon nanowire field effect transistors. Nano Lett. 3, 149\u2013152 (2003).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR6","doi-asserted-by":"publisher","first-page":"1096","DOI":"10.1021\/nl052558g","volume":"6","author":"D Wang","year":"2006","unstructured":"Wang, D., Sheriff, B. A. & Heath, J. R. Silicon p-FETs from ultrahigh density nanowire arrays. Nano Lett. 6, 1096\u20131100 (2006).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR7","doi-asserted-by":"publisher","first-page":"1247","DOI":"10.1021\/nl049461z","volume":"4","author":"HT Ng","year":"2004","unstructured":"Ng, H. T. et al. Single crystal nanowire vertical surround-gate field-effect transistor. Nano Lett. 4, 1247\u20131252 (2004).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR8","doi-asserted-by":"publisher","first-page":"917","DOI":"10.1002\/adma.200700153","volume":"19","author":"T Shimizu","year":"2007","unstructured":"Shimizu, T. et al. Synthesis of vertical high-density epitaxial Si(100) nanowire arrays on a Si(100) substrate using an anodic aluminum oxide template. Adv. Mater. 19, 917\u2013920 (2007).","journal-title":"Adv. Mater."},{"key":"BFsrep30608_CR9","doi-asserted-by":"publisher","first-page":"208","DOI":"10.1126\/science.279.5348.208","volume":"279","author":"AM Morales","year":"1998","unstructured":"Morales, A. M. & Lieber, C. M. A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208\u2013211 (1998).","journal-title":"Science"},{"key":"BFsrep30608_CR10","doi-asserted-by":"publisher","first-page":"681","DOI":"10.1021\/nl050099d","volume":"5","author":"HY Tuan","year":"2005","unstructured":"Tuan, H. Y., Lee, D. C., Hanrath, T. & Korgel, B. A. Catalytic solid-phase seeding of silicon nanowires by nickel nanocrystals in organic solvents. NanoLett. 5, 681\u2013684 (2005).","journal-title":"NanoLett."},{"key":"BFsrep30608_CR11","doi-asserted-by":"publisher","first-page":"275","DOI":"10.1021\/nl0481573","volume":"5","author":"R Juhasz","year":"2005","unstructured":"Juhasz, R., Elfstrom, N. & Linnros, J. Controlled Fabrication of silicon nanowires by electron beam lithography and electrochemical size reduction. NanoLett. 5, 275\u2013280 (2005).","journal-title":"NanoLett."},{"key":"BFsrep30608_CR12","doi-asserted-by":"publisher","first-page":"3026","DOI":"10.1002\/adfm.200800371","volume":"18","author":"K Peng","year":"2008","unstructured":"Peng, K., Lu, A., Zhang, R. & Lee, S. T. Motility of metal nanoparticles in silicon and induced anisotropic silicon etching. Adv. Funct. Mater. 18, 3026\u20133035 (2008).","journal-title":"Adv. Funct. Mater."},{"key":"BFsrep30608_CR13","doi-asserted-by":"publisher","first-page":"1835","DOI":"10.1063\/1.121199","volume":"72","author":"YF Zhang","year":"1998","unstructured":"Zhang, Y. F. et al. Silicon nanowires prepared by laser ablation at high temperature. Appl. Phys. Lett. 72, 1835\u20131837 (1998).","journal-title":"Appl. Phys. Lett."},{"key":"BFsrep30608_CR14","doi-asserted-by":"publisher","first-page":"435","DOI":"10.1021\/ar9700365","volume":"32","author":"J Hu","year":"1999","unstructured":"Hu, J., Odom, T. W. & Lieber, C. M. Chemistry and physics in one dimension: synthesis and properties of nanowires and nanotubes. Acc. Chem. Res. 32, 435\u2013445 (1999).","journal-title":"Acc. Chem. Res."},{"key":"BFsrep30608_CR15","doi-asserted-by":"crossref","unstructured":"Jeon, N. & Lauhon, L. J. Atom probe tomography of nanowires in Solid state physics, Vol. 93 Semiconductor nanowires I: Growth and theory (eds Fontcuberta, A. et al.) 249\u2013278 (Academic Press, 2015).","DOI":"10.1016\/bs.semsem.2015.07.003"},{"key":"BFsrep30608_CR16","doi-asserted-by":"publisher","first-page":"168","DOI":"10.1038\/nnano.2008.5","volume":"3","author":"JE Allen","year":"2008","unstructured":"Allen J. E. et al. High-resolution detection of Au catalyst atoms in Si nanowires. Nat. nanotechnol. 3, 168\u2013173 (2008).","journal-title":"Nat. nanotechnol."},{"key":"BFsrep30608_CR17","doi-asserted-by":"publisher","first-page":"215205","DOI":"10.1088\/0957-4484\/23\/21\/215205","volume":"23","author":"CM Eichfeld","year":"2012","unstructured":"Eichfeld, C. M. et al. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology 23, 215205 (2012).","journal-title":"Nanotechnology"},{"key":"BFsrep30608_CR18","doi-asserted-by":"publisher","first-page":"78","DOI":"10.1038\/nature11999","volume":"496","author":"O Moutanabbir","year":"2013","unstructured":"Moutanabbir, O. et al. Colossal injection of catalyst atoms into silicon nanowires. Nature 496, 78\u201382 (2013).","journal-title":"Nature"},{"key":"BFsrep30608_CR19","doi-asserted-by":"publisher","first-page":"315710","DOI":"10.1088\/0957-4484\/22\/31\/315710","volume":"22","author":"DHK Murthy","year":"2011","unstructured":"Murthy, D. H. K. et al. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient. Nanotechnology 22, 315710 (2011).","journal-title":"Nanotechnology"},{"key":"BFsrep30608_CR20","doi-asserted-by":"publisher","first-page":"271","DOI":"10.1186\/1556-276X-6-271","volume":"6","author":"M Roussel","year":"2011","unstructured":"Roussel, M. et al. Atomic scale investigation of silicon nanowires and nanoclusters. Nanoscale Res. Lett. 6, 271 (2011).","journal-title":"Nanoscale Res. Lett."},{"key":"BFsrep30608_CR21","doi-asserted-by":"publisher","first-page":"1037","DOI":"10.1039\/c0ee00014k","volume":"3","author":"MC Putnam","year":"2010","unstructured":"Putnam, M. C. et al. Si microwire-array solar cells. Energy Environ. Sci. 3, 1037\u20131041 (2010).","journal-title":"Energy Environ. Sci."},{"key":"BFsrep30608_CR22","doi-asserted-by":"publisher","first-page":"710","DOI":"10.1021\/nl072622p","volume":"8","author":"MD Kelzenberg","year":"2008","unstructured":"Kelzenberg, M. D. et al. Photovoltaic measurements in single-nanowire silicon solar cells. Nano Lett. 8, 710\u2013714 (2008).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR23","doi-asserted-by":"publisher","first-page":"239","DOI":"10.1038\/nmat2635","volume":"9","author":"MD Kelzenberg","year":"2010","unstructured":"Kelzenberg, M. D. et al. Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. Nat. Mater. 9, 239\u2013244 (2010).","journal-title":"Nat. Mater."},{"key":"BFsrep30608_CR24","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1021\/nl025875l","volume":"3","author":"Y Cui","year":"2003","unstructured":"Cui, Y., Zhong, Z., Wang, D., Wang, W. U. & Lieber, C. M. High performance silicon nanowire field effect transistors. Nano Lett. 3, 149\u2013152 (2003).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR25","doi-asserted-by":"publisher","first-page":"1096","DOI":"10.1021\/nl052558g","volume":"6","author":"D Wang","year":"2006","unstructured":"Wang, D., Sheriff, B. A. & Heath, J. R. Silicon p-FETs from ultrahigh density nanowire arrays. Nano Lett. 6, 1096\u20131100 (2006).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR26","doi-asserted-by":"publisher","first-page":"1247","DOI":"10.1021\/nl049461z","volume":"4","author":"HT Ng","year":"2004","unstructured":"Ng, H. T. et al. Single crystal nanowire vertical surround-gate field-effect transistor. Nano Lett. 4, 1247\u20131252 (2004).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR27","doi-asserted-by":"publisher","first-page":"3902","DOI":"10.1063\/1.122930","volume":"73","author":"N Wang","year":"1998","unstructured":"Wang, N., Zhang, Y. F., Tang, Y. H., Lee, C. S. & Lee, S. T. SiO2-enhanced synthesis of Si nanowires by laser ablation. Appl. Phys. Lett. 73, 3902\u20133904 (1998).","journal-title":"Appl. Phys. Lett."},{"key":"BFsrep30608_CR28","doi-asserted-by":"publisher","first-page":"16024","DOI":"10.1103\/PhysRevB.58.R16024","volume":"58","author":"N Wang","year":"1998","unstructured":"Wang, N., Tang, Y. H., Zhang, Y. F., Lee, C. S. & Lee, S. T. Nucleation and growth of Si nanowires from silicon oxide. Phys. Rev. B 58, 16024\u201316031 (1998).","journal-title":"Phys. Rev. B"},{"key":"BFsrep30608_CR29","doi-asserted-by":"publisher","first-page":"635","DOI":"10.1002\/adma.200301641","volume":"15","author":"RQ Zhang","year":"2003","unstructured":"Zhang, R. Q., Lifshitz, Y. & Lee, S. T. Oxide-assisted growth of semiconducting nanowires. Adv. Mater. 15, 635\u2013640 (2003).","journal-title":"Adv. Mater."},{"key":"BFsrep30608_CR30","doi-asserted-by":"publisher","first-page":"16","DOI":"10.1016\/S0921-5093(00)00658-4","volume":"286","author":"ST Lee","year":"2000","unstructured":"Lee, S. T., Wang, N. & Lee, C. S. Semiconductor nanowires: synthesis, structure and properties. Mater. Sci. Eng. A 286, 16\u201323 (2000).","journal-title":"Mater. Sci. Eng. A"},{"key":"BFsrep30608_CR31","doi-asserted-by":"publisher","first-page":"2346","DOI":"10.1063\/1.126341","volume":"76","author":"JL Gole","year":"2000","unstructured":"Gole, J. L., Stout, J. D., Rauch, W. L. & Wang, Z. L. Direct synthesis of silicon nanowires, silica nanospheres and wire-like nanosphere Agglomerates. Appl. Phys. Lett. 76, 2346\u20132348 (2000).","journal-title":"Appl. Phys. Lett."},{"key":"BFsrep30608_CR32","doi-asserted-by":"publisher","first-page":"394","DOI":"10.1016\/S0009-2614(03)00090-3","volume":"371","author":"S Botti","year":"2003","unstructured":"Botti, S. et al. Silicon nanowires grown on Si(100) substrates via thermal reactions with carbon nanoparticles. Chem. Phys. Lett. 371, 394\u2013400 (2003).","journal-title":"Chem. Phys. Lett."},{"key":"BFsrep30608_CR33","doi-asserted-by":"publisher","first-page":"579","DOI":"10.1016\/j.cplett.2003.09.142","volume":"381","author":"G Gundiah","year":"2003","unstructured":"Gundiah, G., Deepak, F. L., Govindaraj, A. & Rao, C. N. R. Carbon-assisted synthesis of silicon nanowires. Chem. Phys. Lett. 381, 579\u2013583 (2003).","journal-title":"Chem. Phys. Lett."},{"key":"BFsrep30608_CR34","doi-asserted-by":"publisher","first-page":"633","DOI":"10.1016\/j.apsusc.2007.06.056","volume":"254","author":"SD Hutagalung","year":"2007","unstructured":"Hutagalung, S. D., Yaacob, K. A. & Aziz, A. F. A. Oxide-assisted growth of silicon nanowires by carbothermal evaporation. Appl. Surf. Sci. 254, 633\u2013637 (2007).","journal-title":"Appl. Surf. Sci."},{"key":"BFsrep30608_CR35","doi-asserted-by":"publisher","first-page":"864","DOI":"10.1021\/nl803752w","volume":"9","author":"BS Kim","year":"2009","unstructured":"Kim, B. S. et al. Catalyst-free growth of single-crystal silicon and germanium nanowires. Nano Lett. 9, 864\u2013869 (2009).","journal-title":"Nano Lett."},{"key":"BFsrep30608_CR36","doi-asserted-by":"publisher","first-page":"4741","DOI":"10.1021\/cg100443d","volume":"10","author":"FW Yuan","year":"2010","unstructured":"Yuan, F. W. & Tuan, H. Y. Supercritical fluid-solid growth of single-crystalline silicon nanowires: an example of metal-free growth in an organic solvent. Cryst. Growth Des. 10, 4741\u20134745 (2010).","journal-title":"Cryst. Growth Des."},{"key":"BFsrep30608_CR37","doi-asserted-by":"publisher","first-page":"577","DOI":"10.1143\/JJAP.41.577","volume":"41","author":"H Kohno","year":"2002","unstructured":"Kohno, H. & Takeda, S. Silicon nanoneedles grown by a simple thermal treatment using metal-sulfur catalysts. Jpn. J. Appl. Phys. 41, 577\u2013578 (2002).","journal-title":"Jpn. J. Appl. Phys."},{"key":"BFsrep30608_CR38","doi-asserted-by":"publisher","first-page":"171","DOI":"10.1063\/1.4866637","volume":"1585","author":"T Ishiyama","year":"2014","unstructured":"Ishiyama, T., Morishima, S., Ishii, Y. & Fukuda, M. Silicon nanowires grown by metal-catalyst-free VLS process. AIP Conference Proceedings 1585, 171\u2013174 (2014).","journal-title":"AIP Conference Proceedings"},{"key":"BFsrep30608_CR39","doi-asserted-by":"publisher","first-page":"16505","DOI":"10.1039\/c1jm12460a","volume":"21","author":"Z Yang","year":"2011","unstructured":"Yang, Z. & Veinot, J. Size-controlled template synthesis of metal-free germanium nanowires. J. Mater. Chem. 21, 16505\u201316509 (2011).","journal-title":"J. Mater. Chem."},{"key":"BFsrep30608_CR40","doi-asserted-by":"publisher","first-page":"656","DOI":"10.1021\/nn102556s","volume":"5","author":"S Krylyuk","year":"2011","unstructured":"Krylyuk, S., Davydov, A. V. & Levin, I. Tapering control of Si nanowires grown from SiCl4 at reduced pressure. ACS Nano. 5, 656\u2013664 (2011).","journal-title":"ACS Nano."},{"key":"BFsrep30608_CR41","doi-asserted-by":"publisher","first-page":"613","DOI":"10.1016\/j.jcrysgro.2004.04.042","volume":"267","author":"S Sharma","year":"2004","unstructured":"Sharma, S., Kamins, T. I. & Williams, R. S. Diameter control of Ti-catalyzed silicon nanowires. J. Cryst. Growth. 267, 613\u2013618 (2004).","journal-title":"J. Cryst. Growth."},{"key":"BFsrep30608_CR42","doi-asserted-by":"publisher","first-page":"4649","DOI":"10.1063\/1.329346","volume":"52","author":"SD Brotherton","year":"1981","unstructured":"Brotherton, S. D., King, M. J. & Parker, G. J. The electrical properties of sulphur in silicon. J. Appl. Phys. 52, 4649\u20134658 (1981).","journal-title":"J. Appl. Phys."},{"key":"BFsrep30608_CR43","first-page":"442","volume":"77","author":"ET Hu","year":"2015","unstructured":"Hu, E. T. et al. Numerical simulations of multilevel impurity photovoltaic effect in the sulfur doped crystalline silicon. Renew. Energy. 77, 442\u2013446 (2015).","journal-title":"Energy."},{"key":"BFsrep30608_CR44","doi-asserted-by":"publisher","first-page":"451","DOI":"10.1063\/1.98419","volume":"51","author":"G Pensl","year":"1987","unstructured":"Pensl, G., Roos, G., Holm, C., Sirtl, E. & Johnson, N. M. Hydrogen neutralization of chalcogen double donors in silicon. Appl. Phys. Lett. 51, 451\u2013453 (1987).","journal-title":"Appl. Phys. Lett."}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/srep30608","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/srep30608.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/srep30608.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,1,4]],"date-time":"2023-01-04T21:43:19Z","timestamp":1672868599000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/srep30608"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,7,28]]},"references-count":44,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2016,11,14]]}},"alternative-id":["BFsrep30608"],"URL":"https:\/\/doi.org\/10.1038\/srep30608","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,7,28]]},"assertion":[{"value":"23 February 2016","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 July 2016","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"28 July 2016","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing financial interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"30608"}}