{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,9]],"date-time":"2025-09-09T20:49:51Z","timestamp":1757450991658,"version":"3.37.3"},"reference-count":33,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2019,10,31]],"date-time":"2019-10-31T00:00:00Z","timestamp":1572480000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2019,10,31]],"date-time":"2019-10-31T00:00:00Z","timestamp":1572480000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The potential use of combined <jats:italic>e<\/jats:italic><jats:sup>\u2212<\/jats:sup>-<jats:italic>\u03b3<\/jats:italic> vs <jats:italic>\u03b3<\/jats:italic>-<jats:italic>\u03b3<\/jats:italic> Perturbed Angular Correlations (PAC) experiments as a possible alternative to study electronic properties of materials and\/or samples where Hall effect measurements are difficult to perform due to low-quality ohmic contacts is here demonstrated using Si- and Zn-doped GaN samples as a showcase example. To do so, the lattice site of implanted <jats:sup>181<\/jats:sup>Hf\/<jats:sup>181<\/jats:sup>Ta and the recombination of Ta ionized and excited electronic states were studied as a function of temperature and sample doping in GaN. By combining the <jats:italic>\u03b3<\/jats:italic>-<jats:italic>\u03b3<\/jats:italic> and <jats:italic>e<\/jats:italic><jats:sup>\u2212<\/jats:sup>-<jats:italic>\u03b3<\/jats:italic> PAC results with Density Functional Theory simulations, it was possible to assign a single stable site with a double-donor character for Ta in GaN. A metastable charge state was also identified at particular temperatures using <jats:italic>e<\/jats:italic><jats:sup>\u2212<\/jats:sup>-<jats:italic>\u03b3<\/jats:italic> PAC. A thermally activated process was observed for the electronic recombination at high temperatures with activation energies of 15(2) meV and 12(1) meV for the Si- and Zn-doped samples, respectively, and attributed to Si shallow donors present in both samples. A reduced number of available electrons was observed in the Zn-doped sample due to donor compensation by the Zn acceptors. At low temperatures, it is suggested that the recombination process occurs via Variable Range Hopping. The doping characteristics of both samples were successfully distinguished.<\/jats:p>","DOI":"10.1038\/s41598-019-52098-5","type":"journal-article","created":{"date-parts":[[2019,10,31]],"date-time":"2019-10-31T11:08:43Z","timestamp":1572520123000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Studying electronic properties in GaN without electrical contacts using \u03b3-\u03b3 vs e\u2212-\u03b3 Perturbed Angular Correlations"],"prefix":"10.1038","volume":"9","author":[{"given":"M. B.","family":"Barbosa","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8848-0824","authenticated-orcid":false,"given":"J. G.","family":"Correia","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5546-6922","authenticated-orcid":false,"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"R.","family":"Vianden","sequence":"additional","affiliation":[]},{"given":"J. P.","family":"Ara\u00fajo","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2019,10,31]]},"reference":[{"key":"52098_CR1","unstructured":"B\u00e4verstam, U., Johansson, A. & Gerholm, T. Arkiv f\u00fcr Fysik Band 35, 451 (1967)."},{"key":"52098_CR2","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/0029-554X(65)90466-0","volume":"32","author":"P Kleinheinz","year":"1965","unstructured":"Kleinheinz, P., Samuelsson, L., Vukanovi\u0107, R. & Siegbahn, K. A four-detector electron directional correlation spectrometer. Nuclear Instruments and Methods 32, 1\u201327, https:\/\/doi.org\/10.1016\/0029-554X(65)90466-0 (1965).","journal-title":"Nuclear Instruments and Methods"},{"key":"52098_CR3","doi-asserted-by":"publisher","unstructured":"Marques, J. G., Correia, J. G., Melo, A. A., da Silva, M. & Soares, J. A four-detector spectrometer for e\n                           \u2212 \u2212 \u03b3 PAC on-line with the ISOLDE-CERN isotope separator. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 99, 645\u2013648, https:\/\/doi.org\/10.1016\/0168-583X(94)00591-5, Application of Accelerators in Research and Industry \u201994 (1995).","DOI":"10.1016\/0168-583X(94)00591-5"},{"key":"52098_CR4","doi-asserted-by":"publisher","first-page":"367","DOI":"10.1016\/j.nds.2005.11.001","volume":"106","author":"S-C Wu","year":"2005","unstructured":"Wu, S.-C. Nuclear Data Sheets for A = 181. Nuclear Data Sheets 106, 367\u2013600, https:\/\/doi.org\/10.1016\/j.nds.2005.11.001 (2005).","journal-title":"Nuclear Data Sheets"},{"key":"52098_CR5","doi-asserted-by":"publisher","first-page":"676","DOI":"10.1103\/PhysRevB.10.676","volume":"10","author":"B Monemar","year":"1974","unstructured":"Monemar, B. Fundamental energy gap of GaN from photoluminescence excitation spectra. Phys. Rev. B 10, 676\u2013681, https:\/\/doi.org\/10.1103\/PhysRevB.10.676 (1974).","journal-title":"Phys. Rev. B"},{"key":"52098_CR6","doi-asserted-by":"publisher","first-page":"7897","DOI":"10.1103\/PhysRevB.48.7897","volume":"48","author":"K Miwa","year":"1993","unstructured":"Miwa, K. & Fukumoto, A. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride. Phys. Rev. B 48, 7897\u20137902, https:\/\/doi.org\/10.1103\/PhysRevB.48.7897 (1993).","journal-title":"Phys. Rev. B"},{"key":"52098_CR7","doi-asserted-by":"publisher","first-page":"2653","DOI":"10.1088\/0022-3727\/31\/20\/001","volume":"31","author":"O Ambacher","year":"1998","unstructured":"Ambacher, O. Growth and applications of Group III-nitrides. Journal of Physics D: Applied Physics 31, 2653 (1998).","journal-title":"Journal of Physics D: Applied Physics"},{"key":"52098_CR8","doi-asserted-by":"publisher","first-page":"207","DOI":"10.1016\/S0921-5107(98)00392-4","volume":"59","author":"E Alves","year":"1999","unstructured":"Alves, E., da Silva, M. F., Marques, J. G., Soares, J. C. & Freitag, K. Annealing behavior and lattice site location of Hf implanted GaN. Materials Science and Engineering: B 59, 207\u2013210, https:\/\/doi.org\/10.1016\/S0921-5107(98)00392-4 (1999).","journal-title":"Materials Science and Engineering: B"},{"key":"52098_CR9","doi-asserted-by":"publisher","first-page":"3144","DOI":"10.1063\/1.115805","volume":"68","author":"W G\u00f6tz","year":"1996","unstructured":"G\u00f6tz, W. et al. Activation energies of Si donors in GaN. Applied Physics Letters 68, 3144\u20133146, https:\/\/doi.org\/10.1063\/1.115805 (1996).","journal-title":"Applied Physics Letters"},{"key":"52098_CR10","doi-asserted-by":"publisher","first-page":"1280","DOI":"10.1063\/1.1663402","volume":"45","author":"JI Pankove","year":"1974","unstructured":"Pankove, J. I., Berkeyheiser, J. E. & Miller, E. A. Properties of Zn-doped GaN. I. Photoluminescence. Journal of Applied Physics 45, 1280\u20131286, https:\/\/doi.org\/10.1063\/1.1663402 (1974).","journal-title":"Journal of Applied Physics"},{"key":"52098_CR11","doi-asserted-by":"publisher","first-page":"L11.1","DOI":"10.1557\/PROC-743-L11.1","volume":"743","author":"MA Reshchikov","year":"2002","unstructured":"Reshchikov, M. A., Morko\u00e7, H., Molnar, R. J., Tsvetkov, D. & Dmitriev, V. Blue Luminescence in Undoped and Zn-doped GaN. MRS Proceedings 743, L11.1, https:\/\/doi.org\/10.1557\/PROC-743-L11.1 (2002).","journal-title":"MRS Proceedings"},{"key":"52098_CR12","doi-asserted-by":"publisher","first-page":"115204","DOI":"10.1103\/PhysRevB.88.115204","volume":"88","author":"DO Demchenko","year":"2013","unstructured":"Demchenko, D. O. & Reshchikov, M. A. Blue luminescence and Zn acceptor in GaN. Phys. Rev. B 88, 115204, https:\/\/doi.org\/10.1103\/PhysRevB.88.115204 (2013).","journal-title":"Phys. Rev. B"},{"key":"52098_CR13","doi-asserted-by":"publisher","first-page":"032109","DOI":"10.1063\/1.5040941","volume":"113","author":"\u0141 Janicki","year":"2018","unstructured":"Janicki, \u0141. et al. Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy. Applied Physics Letters 113, 032109, https:\/\/doi.org\/10.1063\/1.5040941 (2018).","journal-title":"Applied Physics Letters"},{"key":"52098_CR14","doi-asserted-by":"publisher","first-page":"89","DOI":"10.1007\/s10751-008-9708-7","volume":"177","author":"K Lorenz","year":"2007","unstructured":"Lorenz, K., Geruschke, T., Alves, E. & Vianden, R. Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf. Hyperfine Interactions 177, 89\u201395, https:\/\/doi.org\/10.1007\/s10751-008-9708-7 (2007).","journal-title":"Hyperfine Interactions"},{"key":"52098_CR15","doi-asserted-by":"publisher","first-page":"363","DOI":"10.1007\/Bf01394538","volume":"262","author":"H Winkler","year":"1973","unstructured":"Winkler, H. & Gerdau, E. \u03b3\u03b3-Angular Correlations Perturbed by Stochastic Fluctuating Fields. Zeitschrift Fur Physik 262, 363\u2013376, https:\/\/doi.org\/10.1007\/Bf01394538 (1973).","journal-title":"Zeitschrift Fur Physik"},{"key":"52098_CR16","doi-asserted-by":"publisher","first-page":"085125","DOI":"10.1103\/PhysRevB.81.085125","volume":"81","author":"M Magnuson","year":"2010","unstructured":"Magnuson, M., Mattesini, M., H\u00f6glund, C., Birch, J. & Hultman, L. Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods. Phys. Rev. B 81, 085125, https:\/\/doi.org\/10.1103\/PhysRevB.81.085125 (2010).","journal-title":"Phys. Rev. B"},{"key":"52098_CR17","doi-asserted-by":"publisher","first-page":"075202","DOI":"10.1103\/PhysRevB.77.075202","volume":"77","author":"P Rinke","year":"2008","unstructured":"Rinke, P. et al. Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN. Phys. Rev. B 77, 075202, https:\/\/doi.org\/10.1103\/PhysRevB.77.075202 (2008).","journal-title":"Phys. Rev. B"},{"key":"52098_CR18","doi-asserted-by":"publisher","first-page":"3675","DOI":"10.1063\/1.1600519","volume":"94","author":"I Vurgaftman","year":"2003","unstructured":"Vurgaftman, I. & Meyer, J. R. Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics 94, 3675\u20133696, https:\/\/doi.org\/10.1063\/1.1600519 (2003).","journal-title":"Journal of Applied Physics"},{"key":"52098_CR19","doi-asserted-by":"publisher","first-page":"3851","DOI":"10.1063\/1.1682673","volume":"95","author":"CG Van de Walle","year":"2004","unstructured":"Van de Walle, C. G. & Neugebauer, J. First-principles calculations for defects and impurities: Applications to III-nitrides. Journal of Applied Physics 95, 3851\u20133879, https:\/\/doi.org\/10.1063\/1.1682673 (2004).","journal-title":"Journal of Applied Physics"},{"key":"52098_CR20","doi-asserted-by":"publisher","first-page":"245203","DOI":"10.1103\/PhysRevB.85.245203","volume":"85","author":"MA Reshchikov","year":"2012","unstructured":"Reshchikov, M. A. Two-step thermal quenching of photoluminescence in Zn-doped GaN. Phys. Rev. B 85, 245203, https:\/\/doi.org\/10.1103\/PhysRevB.85.245203 (2012).","journal-title":"Phys. Rev. B"},{"key":"52098_CR21","doi-asserted-by":"publisher","first-page":"41","DOI":"10.1103\/PhysRev.151.41","volume":"151","author":"TA Carlson","year":"1966","unstructured":"Carlson, T. A., Hunt, W. E. & Krause, M. O. Relative Abundances of Ions Formed as Result of Inner-Shell Vacancies in Atoms. Physical Review 151, 41\u2013&, https:\/\/doi.org\/10.1103\/PhysRev.151.41 (1966).","journal-title":"Physical Review"},{"key":"52098_CR22","volume-title":"Nuclear Condensed Matter Physics","author":"G Schatz","year":"1996","unstructured":"Schatz, G. & Weidinger, A. Nuclear Condensed Matter Physics. (John Wiley and Sons, New York, 1996)."},{"key":"52098_CR23","doi-asserted-by":"publisher","first-page":"3","DOI":"10.4028\/www.scientific.net\/DDF.311.3","volume":"311","author":"MO Zacate","year":"2011","unstructured":"Zacate, M. O. & Jaeger, H. Perturbed Angular Correlation Spectroscopy - A Tool for the Study of Defects and Diffusion at the Atomic Scale. Defect and Diffusion Forum 311, 3\u201338, https:\/\/doi.org\/10.4028\/www.scientific.net\/DDF.311.3 (2011).","journal-title":"Defect and Diffusion Forum"},{"key":"52098_CR24","volume-title":"Alpha- Beta- and Gamma-Ray Spectroscopy","author":"H Frauenfelder","year":"1965","unstructured":"Frauenfelder, H. & Steffen, R. M. Alpha- Beta- and Gamma-Ray Spectroscopy 2 (K. Siegbahn, Amsterdam, 1965)."},{"key":"52098_CR25","doi-asserted-by":"publisher","first-page":"397","DOI":"10.1016\/S0550-306X(68)80017-5","volume":"4","author":"RS Hager","year":"1968","unstructured":"Hager, R. S. & Seltzer, E. C. Internal Conversion Tables: -Part II- Directional and Polarization. Particle Parameters for Z = 30 to Z = 103. Nuclear Data Tables 4, 397\u2013641 (1968).","journal-title":"Nuclear Data Tables"},{"key":"52098_CR26","doi-asserted-by":"crossref","unstructured":"Butz, T., Saibene, S., Fraenzke, T. & Weber, M. A \u201cTDPAC-camera\u201d. Nucl. 284, 417\u2013421 (1989).","DOI":"10.1016\/0168-9002(89)90311-2"},{"key":"52098_CR27","volume-title":"WIEN2k: An Augmented Plane Wave plus Local Orbitals Program for Calculating Crystal Properties","author":"P Blaha","year":"2001","unstructured":"Blaha, P. et al. WIEN2k: An Augmented Plane Wave plus Local Orbitals Program for Calculating Crystal Properties. (Vienna University of Technology, Austria, 2001)."},{"key":"52098_CR28","doi-asserted-by":"publisher","first-page":"226401","DOI":"10.1103\/PhysRevLett.102.226401","volume":"102","author":"F Tran","year":"2009","unstructured":"Tran, F. & Blaha, P. Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys Rev Lett 102, 226401, https:\/\/doi.org\/10.1103\/PhysRevLett.102.226401 (2009).","journal-title":"Phys Rev Lett"},{"key":"52098_CR29","doi-asserted-by":"publisher","first-page":"815","DOI":"10.1016\/0038-1098(77)90959-0","volume":"23","author":"H Schulz","year":"1977","unstructured":"Schulz, H. & Thiemann, K. H. Crystal structure refinement of AlN and GaN. Solid State Communications 23, 815\u2013819, https:\/\/doi.org\/10.1016\/0038-1098(77)90959-0 (1977).","journal-title":"Solid State Communications"},{"key":"52098_CR30","doi-asserted-by":"publisher","first-page":"7422","DOI":"10.1063\/1.470314","volume":"103","author":"PE Blochl","year":"1995","unstructured":"Blochl, P. E. Electrostatic decoupling of periodic images of plane-waves-expanded densities and derived atomic point charges. The Journal of Chemical Physics 103, 7422\u20137428, https:\/\/doi.org\/10.1063\/1.470314 (1995).","journal-title":"The Journal of Chemical Physics"},{"key":"52098_CR31","doi-asserted-by":"publisher","first-page":"075203","DOI":"10.1103\/PhysRevB.86.075203","volume":"86","author":"GN Darriba","year":"2012","unstructured":"Darriba, G. N., Rentera, M., Petrilli, H. M. & Assali, L. V. C. Site localization of Cd impurities in sapphire. Phys. Rev. B 86, 075203, https:\/\/doi.org\/10.1103\/PhysRevB.86.075203 (2012).","journal-title":"Phys. Rev. B"},{"key":"52098_CR32","doi-asserted-by":"publisher","first-page":"299","DOI":"10.1016\/j.commatsci.2010.05.010","volume":"49","author":"W Setyawan","year":"2010","unstructured":"Setyawan, W. & Curtarolo, S. High-throughput electronic band structure calculations: Challenges and tools. Computational Materials Science 49, 299\u2013312 (2010).","journal-title":"Computational Materials Science"},{"key":"52098_CR33","doi-asserted-by":"publisher","first-page":"17","DOI":"10.1016\/j.nima.2013.05.045","volume":"726","author":"MA Nagl","year":"2013","unstructured":"Nagl, M. A., Barbosa, M. B., Vetter, U., Correia, J. G. & Hofs\u00e4ss, H. C. A new tool for the search of nuclides with properties suitable for nuclear solid state physics based on the Evaluated Nuclear Structure Data Files. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 726, 17\u201330, https:\/\/doi.org\/10.1016\/j.nima.2013.05.045 (2013).","journal-title":"Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment"}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-52098-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-52098-5","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-52098-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,17]],"date-time":"2022-12-17T15:13:42Z","timestamp":1671290022000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41598-019-52098-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10,31]]},"references-count":33,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2019,12]]}},"alternative-id":["52098"],"URL":"https:\/\/doi.org\/10.1038\/s41598-019-52098-5","relation":{},"ISSN":["2045-2322"],"issn-type":[{"type":"electronic","value":"2045-2322"}],"subject":[],"published":{"date-parts":[[2019,10,31]]},"assertion":[{"value":"18 May 2019","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 October 2019","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"31 October 2019","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"15734"}}