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In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\beta$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mi>\u03b2<\/mml:mi>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>-<jats:inline-formula><jats:alternatives><jats:tex-math>$${\\mathrm{Ga}_{2}\\mathrm{O}_{3}}$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:msub>\n                      <mml:mi>Ga<\/mml:mi>\n                      <mml:mn>2<\/mml:mn>\n                    <\/mml:msub>\n                    <mml:msub>\n                      <mml:mi>O<\/mml:mi>\n                      <mml:mn>3<\/mml:mn>\n                    <\/mml:msub>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. The acceptor character of Cd in <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\beta$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mi>\u03b2<\/mml:mi>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>-<jats:inline-formula><jats:alternatives><jats:tex-math>$${\\mathrm{Ga}_{2}\\mathrm{O}_{3}}$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:msub>\n                      <mml:mi>Ga<\/mml:mi>\n                      <mml:mn>2<\/mml:mn>\n                    <\/mml:msub>\n                    <mml:msub>\n                      <mml:mi>O<\/mml:mi>\n                      <mml:mn>3<\/mml:mn>\n                    <\/mml:msub>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> is demonstrated, with Cd sitting in the octahedral Ga site having a negative charge state, showing no evidence of polaron deformations nor extra point defects nearby. The possibility to determine the charge state of Cd will allow assessing the doping type, in particular proving p-type character, without the need for ohmic contacts. Furthermore, a possible approach for contactless charge mobility studies is demonstrated, revealing thermally activated free electrons for temperatures above <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\sim$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mo>\u223c<\/mml:mo>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> 648\u00a0K with an activation energy of 0.54(1) and local electron transport dominated by a tunneling process between defect levels and the Cd probes at lower temperatures.<\/jats:p>","DOI":"10.1038\/s41598-022-18121-y","type":"journal-article","created":{"date-parts":[[2022,8,26]],"date-time":"2022-08-26T10:02:21Z","timestamp":1661508141000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Contactless doping characterization of $${\\mathrm{Ga}_{2}\\mathrm{O}_{3}}$$ using acceptor Cd probes"],"prefix":"10.1038","volume":"12","author":[{"given":"Marcelo B.","family":"Barbosa","sequence":"first","affiliation":[]},{"given":"Jo\u00e3o Guilherme","family":"Correia","sequence":"additional","affiliation":[]},{"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"Armandina M. 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