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The P-E hysteresis loops reveal the ferroelectric nature of both Pt\/BTO\/ITO and Pt\/HAO\/BTO\/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt\/HAO\/BTO\/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt\/HAO\/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (<jats:italic>T<\/jats:italic><jats:sub><jats:italic>c<\/jats:italic><\/jats:sub>\u2009=\u2009140\u2009\u00b0C). Furthermore, the Pt\/HAO\/BTO\/ITO structures show promising endurance characteristics, with a RS ratio &gt;10<jats:sup>3<\/jats:sup> after 10<jats:sup>9<\/jats:sup> switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.<\/jats:p>","DOI":"10.1038\/srep46350","type":"journal-article","created":{"date-parts":[[2017,4,11]],"date-time":"2017-04-11T11:20:26Z","timestamp":1491909626000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":42,"title":["Enhanced resistive switching characteristics in Pt\/BaTiO3\/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer"],"prefix":"10.1038","volume":"7","author":[{"given":"J. P. B.","family":"Silva","sequence":"first","affiliation":[]},{"given":"F. L.","family":"Faita","sequence":"additional","affiliation":[]},{"given":"K.","family":"Kamakshi","sequence":"additional","affiliation":[]},{"given":"K. C.","family":"Sekhar","sequence":"additional","affiliation":[]},{"given":"J. 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