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C"],"abstract":"<p>\n                    Metal\u2013oxide-semiconductor (MOS) capacitors with an amorphous Ta\n                    <sub>1\u2212x<\/sub>\n                    Zr\n                    <sub>x<\/sub>\n                    O composite gate dielectric film and a SiO\n                    <sub>2<\/sub>\n                    passivation layer were fabricated on an indium phosphide (InP) substrate.\n                  <\/p>","DOI":"10.1039\/c5tc01890k","type":"journal-article","created":{"date-parts":[[2015,9,14]],"date-time":"2015-09-14T08:36:04Z","timestamp":1442219764000},"page":"10293-10301","update-policy":"https:\/\/doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["The impact of atomic layer deposited SiO\n                    <sub>2<\/sub>\n                    passivation for high-k Ta\n                    <sub>1\u2212x<\/sub>\n                    Zr\n                    <sub>x<\/sub>\n                    O on the InP substrate"],"prefix":"10.1039","volume":"3","author":[{"given":"Chandreswar","family":"Mahata","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Il-Kwon","family":"Oh","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang Mo","family":"Yoon","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang Wan","family":"Lee","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jungmok","family":"Seo","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hassan","family":"Algadi","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mi-Hyang","family":"Sheen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering"},{"name":"Seoul National University"},{"name":"Seoul 151-744"},{"name":"Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Young-Woon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering"},{"name":"Seoul National University"},{"name":"Seoul 151-744"},{"name":"Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyungjun","family":"Kim","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Taeyoon","family":"Lee","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering"},{"name":"Yonsei University"},{"name":"Seoul 120-749"},{"name":"Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"292","published-online":{"date-parts":[[2015]]},"reference":[{"key":"C5TC01890K-(cit1)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"493","DOI":"10.1557\/mrs2009.137","volume":"34","author":"Wallace","year":"2009","journal-title":"Mater. 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