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C"],"abstract":"<jats:p>\n                    The low-temperature PEALD approach results in high-Al-content \u03b5-(Al\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    Ga\n                    <jats:sub>\n                      1\u2212\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    )\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    films with high crystallinity, a tunable bandgap, and large conduction band offsets, suitable for polarization-engineered electronics.\n                  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