{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,12]],"date-time":"2026-10-12T15:51:48Z","timestamp":1791820308073,"version":"4.3.4"},"reference-count":28,"publisher":"Royal Society of Chemistry (RSC)","issue":"10","license":[{"start":{"date-parts":[[2026,7,13]],"date-time":"2026-07-13T00:00:00Z","timestamp":1783900800000},"content-version":"vor","delay-in-days":193,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2024-00449412"],"award-info":[{"award-number":["RS-2024-00449412"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS-2025-16063688"],"award-info":[{"award-number":["RS-2025-16063688"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["rsc.org"],"crossmark-restriction":true},"short-container-title":["Nanoscale Horiz."],"abstract":"<jats:p>\n                    A quantum-capacitance-induced gate-control factor explains anomalous cryogenic transconductance shoulders in quasi-ballistic Si transistors, enabling self-consistent reproduction of both\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>D<\/jats:sub>\n                    and\n                    <jats:italic>g<\/jats:italic>\n                    <jats:sub>m<\/jats:sub>\n                    down to 12 K.\n                  <\/jats:p>","DOI":"10.1039\/d6nh00209a","type":"journal-article","created":{"date-parts":[[2026,7,13]],"date-time":"2026-07-13T19:23:24Z","timestamp":1783970604000},"page":"2548-2559","update-policy":"https:\/\/doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Quantum capacitance-induced transconductance anomalies in cryogenic quasi-ballistic transistors"],"prefix":"10.1039","volume":"11","author":[{"ORCID":"https:\/\/orcid.org\/0009-0007-3590-1414","authenticated-orcid":false,"given":"Dokyoung","family":"Lee","sequence":"first","affiliation":[{"name":"Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea"},{"name":"Institute for Multiscale Matter and Systems (IMMS), Ewha Womans University, Seoul 03760, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyeonsik","family":"Ahn","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Hanbat National University, Daejeon 34158, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jusung","family":"Kim","sequence":"additional","affiliation":[{"name":"Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea"},{"name":"Institute for Multiscale Matter and Systems (IMMS), Ewha Womans University, Seoul 03760, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Moon-Seok","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Convergence, Chungnam National University, Daejeon 34134, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7004-3482","authenticated-orcid":false,"given":"Sungho","family":"Kim","sequence":"additional","affiliation":[{"name":"Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea"},{"name":"Institute for Multiscale Matter and Systems (IMMS), Ewha Womans University, Seoul 03760, Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"292","published-online":{"date-parts":[[2026]]},"reference":[{"key":"D6NH00209A\/cit1\/1","doi-asserted-by":"crossref","first-page":"1314","DOI":"10.1109\/4.535416","volume":"31","author":"Silveira","year":"1996","journal-title":"IEEE J. Solid-State Circuits"},{"key":"D6NH00209A\/cit2\/1","first-page":"898","volume-title":"International Electron Devices Meeting (IEDM)","author":"Subramanian","year":"2005","unstructured":"V.Subramanian ,  B.Parvais ,  J.Borremans ,  A.Mercha ,  D.Linten ,  P.Wambacq ,  J.Loo ,  M.Dehan ,  N.Collaert ,  S.Kubicek ,  R. J. P.Lander ,  J. C.Hooker ,  F. N.Cubaynes ,  S.Donnay ,  M.Jurczak ,  G.Groeseneken ,  W.Sansen  and  S.Decoutere ,  International Electron Devices Meeting (IEDM) ,  2005 , vol. 2005,  pp. 898\u2013901"},{"key":"D6NH00209A\/cit3\/1","doi-asserted-by":"crossref","first-page":"455","DOI":"10.1016\/j.mssp.2014.12.026","volume":"31","author":"Mohapatra","year":"2015","journal-title":"Mater. Sci. Semicond. Process."},{"key":"D6NH00209A\/cit4\/1","doi-asserted-by":"crossref","first-page":"208","DOI":"10.1109\/JEDS.2015.2412118","volume":"3","author":"Barboni","year":"2015","journal-title":"IEEE J. Electron Devices Soc."},{"key":"D6NH00209A\/cit5\/1","doi-asserted-by":"crossref","first-page":"1896","DOI":"10.1063\/1.346579","volume":"68","author":"Nassiopoulos","year":"1990","journal-title":"J. Appl. Phys."},{"key":"D6NH00209A\/cit6\/1","doi-asserted-by":"crossref","first-page":"1357","DOI":"10.1109\/TED.2020.2965475","volume":"67","author":"Beckers","year":"2020","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit7\/1","doi-asserted-by":"crossref","first-page":"456","DOI":"10.1109\/TED.2020.3041438","volume":"68","author":"Liu","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit8\/1","doi-asserted-by":"crossref","first-page":"4049","DOI":"10.1109\/TED.2023.3283941","volume":"70","author":"Catapano","year":"2023","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit9\/1","doi-asserted-by":"crossref","first-page":"4267","DOI":"10.1109\/TED.2021.3099775","volume":"68","author":"Zhang","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit10\/1","doi-asserted-by":"crossref","first-page":"4510","DOI":"10.1109\/TED.2024.3419783","volume":"71","author":"Manzoor","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit11\/1","doi-asserted-by":"crossref","first-page":"2385","DOI":"10.1109\/TED.2026.3661968","volume":"73","author":"Pandey","year":"2026","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit12\/1","doi-asserted-by":"crossref","first-page":"784","DOI":"10.1109\/LED.2019.2903111","volume":"40","author":"Bohuslavskyi","year":"2019","journal-title":"IEEE Electron Device Lett."},{"key":"D6NH00209A\/cit13\/1","doi-asserted-by":"crossref","first-page":"689","DOI":"10.1109\/LED.2022.3158495","volume":"43","author":"Singh","year":"2022","journal-title":"IEEE Electron Device Lett."},{"key":"D6NH00209A\/cit14\/1","doi-asserted-by":"crossref","first-page":"12","DOI":"10.1016\/j.cryogenics.2018.12.009","volume":"98","author":"Luo","year":"2019","journal-title":"Cryogenics"},{"key":"D6NH00209A\/cit15\/1","doi-asserted-by":"crossref","first-page":"780","DOI":"10.1109\/JEDS.2020.2989629","volume":"8","author":"Beckers","year":"2020","journal-title":"IEEE J. Electron Devices Soc."},{"key":"D6NH00209A\/cit16\/1","doi-asserted-by":"crossref","first-page":"3617","DOI":"10.1109\/TED.2018.2854701","volume":"65","author":"Beckers","year":"2018","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit17\/1","doi-asserted-by":"crossref","first-page":"3575","DOI":"10.1109\/TED.2022.3175675","volume":"69","author":"Hsieh","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit18\/1","doi-asserted-by":"crossref","first-page":"5180","DOI":"10.1063\/1.1803614","volume":"96","author":"John","year":"2004","journal-title":"J. Appl. Phys."},{"key":"D6NH00209A\/cit19\/1","doi-asserted-by":"crossref","first-page":"092109","DOI":"10.1063\/1.2776887","volume":"91","author":"Fang","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"D6NH00209A\/cit20\/1","doi-asserted-by":"crossref","first-page":"015003","DOI":"10.1088\/2053-1583\/2\/1\/015003","volume":"2","author":"Ma","year":"2015","journal-title":"2D Mater."},{"key":"D6NH00209A\/cit21\/1","doi-asserted-by":"crossref","first-page":"1726","DOI":"10.1039\/D6NH00069J","volume":"11","author":"Lee","year":"2026","journal-title":"Nanoscale Horiz."},{"key":"D6NH00209A\/cit22\/1","doi-asserted-by":"crossref","first-page":"4223","DOI":"10.1109\/TED.2021.3097971","volume":"68","author":"Pahwa","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit23\/1","doi-asserted-by":"crossref","first-page":"108296","DOI":"10.1016\/j.sse.2022.108296","volume":"193","author":"Han","year":"2022","journal-title":"Solid-State Electron."},{"key":"D6NH00209A\/cit24\/1","doi-asserted-by":"crossref","first-page":"225","DOI":"10.1109\/TED.2013.2283253","volume":"61","author":"Lundstrom","year":"2014","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit25\/1","doi-asserted-by":"crossref","first-page":"2650","DOI":"10.1109\/TED.2016.2562739","volume":"63","author":"Antoniadis","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"D6NH00209A\/cit26\/1","doi-asserted-by":"crossref","first-page":"437","DOI":"10.1103\/RevModPhys.54.437","volume":"54","author":"Ando","year":"1982","journal-title":"Rev. Mod. Phys."},{"key":"D6NH00209A\/cit27\/1","doi-asserted-by":"crossref","first-page":"8854","DOI":"10.1021\/acs.jpcc.6c01685","volume":"130","author":"Sakhraoui","year":"2026","journal-title":"J. Phys. Chem. C"},{"key":"D6NH00209A\/cit28\/1","first-page":"2149","volume":"18","author":"Yang","year":"2025","journal-title":"ACS Appl. Mater. Interfaces"}],"container-title":["Nanoscale Horizons"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/pubs.rsc.org\/NH\/article-pdf\/doi\/10.1039\/D6NH00209A\/0\/D6NH00209A.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,12]],"date-time":"2026-10-12T15:39:22Z","timestamp":1791819562000},"score":1,"resource":{"primary":{"URL":"http:\/\/pubs.rsc.org\/NH\/article-lookup\/doi\/10.1039\/D6NH00209A"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026]]},"references-count":28,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2026,10,12]]}},"URL":"https:\/\/doi.org\/10.1039\/d6nh00209a","relation":{},"ISSN":["2055-6756","2055-6764"],"issn-type":[{"value":"2055-6756","type":"print"},{"value":"2055-6764","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026]]}}}