{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T13:50:17Z","timestamp":1792072217510,"version":"4.4.0"},"reference-count":37,"publisher":"Royal Society of Chemistry (RSC)","issue":"39","license":[{"start":{"date-parts":[[2027,9,11]],"date-time":"2027-09-11T00:00:00Z","timestamp":1820620800000},"content-version":"am","delay-in-days":618,"URL":"http:\/\/rsc.li\/journals-terms-of-use"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12274002"],"award-info":[{"award-number":["12274002"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["91964101"],"award-info":[{"award-number":["91964101"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["rsc.org"],"crossmark-restriction":true},"short-container-title":["Nanoscale"],"abstract":"<jats:p>\n                    A sub-5 nm ML SnS\n                    <jats:sub>2<\/jats:sub>\n                    DSFET outperforms its MOSFET counterpart and previously reported graphene-source DSFETs in low-power metrics. This superior performance stems from the n-type ohmic contact with efficient electron tunneling probability.\n                  <\/jats:p>","DOI":"10.1039\/d6nr02642g","type":"journal-article","created":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T06:43:15Z","timestamp":1789108995000},"page":"21568-21575","update-policy":"https:\/\/doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["A monolayer SnS\n                    <sub>2<\/sub>\n                    Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart"],"prefix":"10.1039","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3737-0833","authenticated-orcid":false,"given":"Hong","family":"Li","sequence":"first","affiliation":[{"name":"College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-1372-7011","authenticated-orcid":false,"given":"Tianshuo","family":"Duan","sequence":"additional","affiliation":[{"name":"College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaozhe","family":"Zhang","sequence":"additional","affiliation":[{"name":"Brunel London School North China University of Technology, North China University of Technology, Beijing 100144, P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fengbin","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6780-7322","authenticated-orcid":false,"given":"Jing","family":"Lu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China"},{"name":"Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China"},{"name":"Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"292","published-online":{"date-parts":[[2026]]},"reference":[{"key":"D6NR02642G\/cit1\/1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.physrep.2023.03.001","volume":"1013","author":"Wang","year":"2023","journal-title":"Phys. Rep."},{"key":"D6NR02642G\/cit2\/1","doi-asserted-by":"crossref","first-page":"387","DOI":"10.1126\/science.aap9195","volume":"361","author":"Qiu","year":"2018","journal-title":"Science"},{"key":"D6NR02642G\/cit3\/1","author":"Liu","year":"2018","unstructured":"F.Liu ,  C. G.Qiu ,  Z. Y.Zhang ,  L. M.Peng ,  J.Wang ,  Z. H.Wu  and  H.Guo , First Principles Simulation of Energy efficient Switching by Source Density of States Engineering, 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA,  2018"},{"key":"D6NR02642G\/cit4\/1","doi-asserted-by":"crossref","first-page":"2736","DOI":"10.1109\/TED.2018.2836387","volume":"65","author":"Liu","year":"2018","journal-title":"IEEE Electron Device Lett."},{"key":"D6NR02642G\/cit5\/1","doi-asserted-by":"crossref","first-page":"5762","DOI":"10.1021\/acsnano.1c01503","volume":"15","author":"Liu","year":"2021","journal-title":"ACS Nano"},{"key":"D6NR02642G\/cit6\/1","doi-asserted-by":"crossref","first-page":"1758","DOI":"10.1021\/acs.nanolett.0c04657","volume":"21","author":"Tang","year":"2021","journal-title":"Nano Lett."},{"key":"D6NR02642G\/cit7\/1","doi-asserted-by":"crossref","first-page":"4248","DOI":"10.1021\/acsaelm.3c00530","volume":"5","author":"Lyu","year":"2023","journal-title":"ACS Appl. Electron. Mater."},{"key":"D6NR02642G\/cit8\/1","doi-asserted-by":"crossref","first-page":"1906000","DOI":"10.1002\/adma.201906000","volume":"32","author":"Lyu","year":"2020","journal-title":"Adv. Mater."},{"key":"D6NR02642G\/cit9\/1","doi-asserted-by":"crossref","first-page":"015203","DOI":"10.1088\/1361-6528\/ac96f5","volume":"34","author":"Zhang","year":"2023","journal-title":"Nanotechnology"},{"key":"D6NR02642G\/cit10\/1","doi-asserted-by":"crossref","first-page":"117804","DOI":"10.1016\/j.mseb.2024.117804","volume":"311","author":"Ma","year":"2025","journal-title":"Mater. Sci. Eng., B"},{"key":"D6NR02642G\/cit11\/1","doi-asserted-by":"crossref","first-page":"125407","DOI":"10.1103\/PhysRevB.110.125407","volume":"110","author":"Song","year":"2024","journal-title":"Phys. Rev. B"},{"key":"D6NR02642G\/cit12\/1","doi-asserted-by":"crossref","first-page":"354","DOI":"10.1016\/j.cjph.2026.02.020","volume":"101","author":"Chen","year":"2026","journal-title":"Chin. J. Phys"},{"key":"D6NR02642G\/cit13\/1","doi-asserted-by":"crossref","first-page":"55","DOI":"10.1038\/s41699-022-00332-6","volume":"6","author":"Yin","year":"2022","journal-title":"npj 2D Mater. Appl."},{"key":"D6NR02642G\/cit14\/1","doi-asserted-by":"crossref","first-page":"127203","DOI":"10.1088\/1674-1056\/ad0116","volume":"32","author":"Wang","year":"2023","journal-title":"Chin. Phys. B"},{"key":"D6NR02642G\/cit15\/1","doi-asserted-by":"crossref","first-page":"064037","DOI":"10.1103\/PhysRevApplied.13.064037","volume":"13","author":"Liu","year":"2020","journal-title":"Phys. Rev. Appl."},{"key":"D6NR02642G\/cit16\/1","doi-asserted-by":"crossref","first-page":"1492","DOI":"10.1109\/LED.2023.3294593","volume":"44","author":"Qu","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"D6NR02642G\/cit17\/1","doi-asserted-by":"crossref","first-page":"1427","DOI":"10.1016\/j.scib.2024.03.017","volume":"69","author":"Qu","year":"2024","journal-title":"Sci. Bull."},{"key":"D6NR02642G\/cit18\/1","doi-asserted-by":"crossref","first-page":"064009","DOI":"10.1103\/PhysRevApplied.21.064009","volume":"21","author":"Yang","year":"2024","journal-title":"Phys. Rev. Appl."},{"key":"D6NR02642G\/cit19\/1","doi-asserted-by":"crossref","first-page":"064058","DOI":"10.1103\/PhysRevApplied.19.064058","volume":"19","author":"Nandan","year":"2023","journal-title":"Phys. Rev. Appl."},{"key":"D6NR02642G\/cit20\/1","doi-asserted-by":"crossref","first-page":"7317","DOI":"10.1021\/acsanm.5c00723","volume":"8","author":"Qu","year":"2025","journal-title":"ACS Appl. Nano Mater."},{"key":"D6NR02642G\/cit21\/1","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1016\/j.jmst.2025.07.066","volume":"255","author":"Dong","year":"2026","journal-title":"J. Mater. Sci. Technol."},{"key":"D6NR02642G\/cit22\/1","doi-asserted-by":"crossref","first-page":"2065","DOI":"10.1021\/acsmaterialslett.4c00296","volume":"6","author":"Chen","year":"2024","journal-title":"ACS Mater. Lett."},{"key":"D6NR02642G\/cit23\/1","doi-asserted-by":"crossref","first-page":"18005","DOI":"10.1039\/D4NR02419B","volume":"16","author":"Li","year":"2024","journal-title":"Nanoscale"},{"key":"D6NR02642G\/cit24\/1","doi-asserted-by":"crossref","first-page":"044031","DOI":"10.1103\/PhysRevApplied.14.044031","volume":"14","author":"Guo","year":"2020","journal-title":"Phys. Rev. Appl."},{"key":"D6NR02642G\/cit25\/1","author":"International Roadmap for Devices and Systems (IRDS)","unstructured":"International Roadmap for Devices and Systems (IRDS) ,  https:\/\/irds.ieee.org\/editions.2024"},{"key":"D6NR02642G\/cit26\/1","author":"QuantumATK","unstructured":"QuantumATK ,  https:\/\/www.synopsys.com\/silicon\/quantumatk.html"},{"key":"D6NR02642G\/cit27\/1","first-page":"015901","volume":"32","author":"Smidstrup","year":"2020","journal-title":"J. Phys.:Condens. Matter"},{"key":"D6NR02642G\/cit28\/1","doi-asserted-by":"crossref","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","volume":"78","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"D6NR02642G\/cit29\/1","doi-asserted-by":"crossref","first-page":"1787","DOI":"10.1002\/jcc.20495","volume":"27","author":"Grimme","year":"2006","journal-title":"J. Comput. Chem."},{"key":"D6NR02642G\/cit30\/1","doi-asserted-by":"crossref","DOI":"10.1017\/CBO9780511805776","volume-title":"Electronic Transport in Mesoscopic Systems","author":"Datta","year":"1995","unstructured":"S.Datta ,  Electronic Transport in Mesoscopic Systems ,  Cambridge University Press ,  Cambridge, England ,  1995"},{"key":"D6NR02642G\/cit31\/1","doi-asserted-by":"crossref","DOI":"10.1017\/CBO9781139164313","volume-title":"Quantum Transport: Atom to Transistor","author":"Datta","year":"2005","unstructured":"S.Datta ,  Quantum Transport: Atom to Transistor ,  Cambridge\nUniversity Press ,  Cambridge, England ,  2005"},{"key":"D6NR02642G\/cit32\/1","doi-asserted-by":"crossref","first-page":"114911","DOI":"10.1063\/1.2937077","volume":"103","author":"Forbes","year":"2008","journal-title":"J. Appl. Phys."},{"key":"D6NR02642G\/cit33\/1","doi-asserted-by":"crossref","first-page":"1793","DOI":"10.1063\/1.1702682","volume":"34","author":"Simmons","year":"1963","journal-title":"J. Appl. Phys."},{"key":"D6NR02642G\/cit34\/1","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1007\/s10470-025-02547-1","volume":"126","author":"Chander","year":"2025","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"D6NR02642G\/cit35\/1","doi-asserted-by":"crossref","first-page":"958","DOI":"10.1109\/TNANO.2013.2278021","volume":"12","author":"Sinha","year":"2013","journal-title":"IEEE Trans. Nanotechnol."},{"key":"D6NR02642G\/cit36\/1","doi-asserted-by":"crossref","first-page":"38","DOI":"10.1080\/10584587.2023.2227054","volume":"237","author":"Singh","year":"2023","journal-title":"Integr. Ferroelectr."},{"key":"D6NR02642G\/cit37\/1","doi-asserted-by":"crossref","first-page":"8805","DOI":"10.1007\/s12633-022-01681-z","volume":"14","author":"Chander","year":"2022","journal-title":"Silicon"}],"container-title":["Nanoscale"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/pubs.rsc.org\/NR\/article-pdf\/doi\/10.1039\/D6NR02642G\/0\/D6NR02642G.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T13:26:39Z","timestamp":1792070799000},"score":1,"resource":{"primary":{"URL":"http:\/\/pubs.rsc.org\/NR\/article-lookup\/doi\/10.1039\/D6NR02642G"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026]]},"references-count":37,"journal-issue":{"issue":"39","published-print":{"date-parts":[[2026,10,15]]}},"URL":"https:\/\/doi.org\/10.1039\/d6nr02642g","relation":{},"ISSN":["2040-3364","2040-3372"],"issn-type":[{"value":"2040-3364","type":"print"},{"value":"2040-3372","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026]]}}}