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C"],"abstract":"<jats:p>\n                    This study employs ion radius matching technology to co-dope Si\n                    <jats:sup>4+<\/jats:sup>\n                    sites in Mg\n                    <jats:sub>2<\/jats:sub>\n                    Al\n                    <jats:sub>4<\/jats:sub>\n                    Si\n                    <jats:sub>5<\/jats:sub>\n                    O\n                    <jats:sub>18<\/jats:sub>\n                    with (Mn\n                    <jats:sub>0.5<\/jats:sub>\n                    Ti\n                    <jats:sub>0.5<\/jats:sub>\n                    )\n                    <jats:sup>4+<\/jats:sup>\n                    , enhancing the [Si\n                    <jats:sub>4<\/jats:sub>\n                    Al\n                    <jats:sub>2<\/jats:sub>\n                    ] and [O\n                    <jats:sub>6<\/jats:sub>\n                    ] hexagonal ring symmetry, synergistically optimizing\n                    <jats:italic>Q<\/jats:italic>\n                    \u00d7\n                    <jats:italic>f<\/jats:italic>\n                    (159,681 GHz) and\n                    <jats:italic>\u03c4<\/jats:italic>\n                    <jats:sub>\n                      <jats:italic>f<\/jats:italic>\n                    <\/jats:sub>\n                    (\u221221.075 ppm \u00b0C\n                    <jats:sup>\u22121<\/jats:sup>\n                    ).\n                  <\/jats:p>","DOI":"10.1039\/d6tc00047a","type":"journal-article","created":{"date-parts":[[2026,2,10]],"date-time":"2026-02-10T07:01:28Z","timestamp":1770706888000},"page":"5980-5989","update-policy":"https:\/\/doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["MnTi co-doping in Mg\n                    <sub>2<\/sub>\n                    Al\n                    <sub>4<\/sub>\n                    Si\n                    <sub>5<\/sub>\n                    O\n                    <sub>18<\/sub>\n                    ceramics enhances\n                    <i>Q<\/i>\n                    factor and improves temperature stability with a\n                    <i>\u03c4<\/i>\n                    <sub>\n                      <i>f<\/i>\n                    <\/sub>\n                    value closer to zero"],"prefix":"10.1039","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-5981-2043","authenticated-orcid":false,"given":"Kexu","family":"Ding","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China, 611731"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuanxun","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China, 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