{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T17:23:32Z","timestamp":1783013012918,"version":"3.54.6"},"reference-count":55,"publisher":"Royal Society of Chemistry (RSC)","issue":"25","license":[{"start":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T00:00:00Z","timestamp":1778803200000},"content-version":"vor","delay-in-days":134,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100002301","name":"Eesti Teadusagentuur","doi-asserted-by":"publisher","award":["PRG2594"],"award-info":[{"award-number":["PRG2594"]}],"id":[{"id":"10.13039\/501100002301","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002301","name":"Eesti Teadusagentuur","doi-asserted-by":"publisher","award":["TK210U5"],"award-info":[{"award-number":["TK210U5"]}],"id":[{"id":"10.13039\/501100002301","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004837","name":"Ministerio de Ciencia e Innovaci\u00f3n","doi-asserted-by":"publisher","award":["PID2022- 139586NB-C43"],"award-info":[{"award-number":["PID2022- 139586NB-C43"]}],"id":[{"id":"10.13039\/501100004837","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004837","name":"Ministerio de Ciencia e Innovaci\u00f3n","doi-asserted-by":"publisher","award":["MCIN\/AEI\/10.13039\/501100011033"],"award-info":[{"award-number":["MCIN\/AEI\/10.13039\/501100011033"]}],"id":[{"id":"10.13039\/501100004837","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["rsc.org"],"crossmark-restriction":true},"short-container-title":["J. Mater. Chem. C"],"abstract":"<jats:p>\n                    Resistive switching of Hf\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    Ti\n                    <jats:sub>\n                      1\u2212\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    O\n                    <jats:sub>\n                      <jats:italic>y<\/jats:italic>\n                    <\/jats:sub>\n                    (0.07 \u2264\n                    <jats:italic>x<\/jats:italic>\n                    \u2264 0.64) films was studied. Increase in\n                    <jats:italic>x<\/jats:italic>\n                    , enabling formation of orthorhombic Hf\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    Ti\n                    <jats:sub>\n                      1\u2212\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    O\n                    <jats:sub>\n                      <jats:italic>y<\/jats:italic>\n                    <\/jats:sub>\n                    , caused an increase in the breakdown electric field strength, resistive switching memory window, and endurance.\n                  <\/jats:p>","DOI":"10.1039\/d6tc00262e","type":"journal-article","created":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T13:56:26Z","timestamp":1778853386000},"page":"11269-11283","update-policy":"https:\/\/doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Influence of composition and structure on resistive switching properties of hafnium\u2013titanium-oxide thin films grown by atomic layer deposition"],"prefix":"10.1039","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-7096-4923","authenticated-orcid":false,"given":"Toomas Daniel","family":"Viskus","sequence":"first","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7785-1351","authenticated-orcid":false,"given":"Lauri","family":"Aarik","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"T\u00f5nis","family":"Arroval","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0850-4927","authenticated-orcid":false,"given":"Aarne","family":"Kasikov","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6498-4588","authenticated-orcid":false,"given":"Joonas","family":"Merisalu","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7775-1246","authenticated-orcid":false,"given":"Jekaterina","family":"Kozlova","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1223-0255","authenticated-orcid":false,"given":"Markus","family":"Otsus","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hugo","family":"M\u00e4ndar","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6016-2744","authenticated-orcid":false,"given":"Jaan","family":"Aarik","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0389-3409","authenticated-orcid":false,"given":"Guillermo","family":"Vinuesa","sequence":"additional","affiliation":[{"name":"Departamento de Electricidad y Electr\u00f3nica, E.T.S.I. Telecomunicaci\u00f3n, Universidad de Valladolid, Campus \u2018Miguel Delibes\u2019, 47011 Valladolid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2328-1752","authenticated-orcid":false,"given":"Salvador","family":"Due\u00f1as","sequence":"additional","affiliation":[{"name":"Departamento de Electricidad y Electr\u00f3nica, E.T.S.I. Telecomunicaci\u00f3n, Universidad de Valladolid, Campus \u2018Miguel Delibes\u2019, 47011 Valladolid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3874-721X","authenticated-orcid":false,"given":"Helena","family":"Cast\u00e1n","sequence":"additional","affiliation":[{"name":"Departamento de Electricidad y Electr\u00f3nica, E.T.S.I. Telecomunicaci\u00f3n, Universidad de Valladolid, Campus \u2018Miguel Delibes\u2019, 47011 Valladolid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5821-0364","authenticated-orcid":false,"given":"Kaupo","family":"Kukli","sequence":"additional","affiliation":[{"name":"University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"292","published-online":{"date-parts":[[2026]]},"reference":[{"issue":"23","key":"D6TC00262E\/cit1\/1","doi-asserted-by":"publisher","first-page":"2107575","DOI":"10.1002\/smll.202107575","volume":"18","author":"Banerjee","year":"2022","journal-title":"Small"},{"issue":"11","key":"D6TC00262E\/cit2\/1","doi-asserted-by":"publisher","first-page":"3665","DOI":"10.1109\/TED.2015.2471835","volume":"62","author":"Chand","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"issue":"3","key":"D6TC00262E\/cit3\/1","doi-asserted-by":"publisher","first-page":"033715","DOI":"10.1063\/1.2001146","volume":"98","author":"Choi","year":"2005","journal-title":"J. Appl. Phys."},{"key":"D6TC00262E\/cit4\/1","doi-asserted-by":"publisher","first-page":"26","DOI":"10.1016\/j.mee.2017.04.019","volume":"178","author":"Gonz\u00e1lez-Cordero","year":"2017","journal-title":"Microelectron. Eng."},{"issue":"1","key":"D6TC00262E\/cit5\/1","doi-asserted-by":"publisher","first-page":"90","DOI":"10.1186\/s11671-020-03299-9","volume":"15","author":"Zahoor","year":"2020","journal-title":"Nanoscale Res. Lett."},{"key":"D6TC00262E\/cit6\/1","doi-asserted-by":"publisher","first-page":"164","DOI":"10.1016\/j.jmst.2024.12.020","volume":"227","author":"Boynazarov","year":"2025","journal-title":"J. Mater. Sci. Technol."},{"key":"D6TC00262E\/cit7\/1","doi-asserted-by":"publisher","first-page":"27","DOI":"10.1109\/ISCA.2016.13","author":"Chi","year":"2016","unstructured":"P.Chi ,  S.Li ,  C.Xu ,  T.Zhang ,  J.Zhao ,  Y.Liu ,  Y.Wang  and  Y.Xie , PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory. In 2016 ACM\/IEEE 43rd Annual International Symposium on Computer Architecture (ISCA), IEEE: Seoul, South Korea,  2016 , pp  2739 10.1109\/ISCA.2016.13"},{"key":"D6TC00262E\/cit8\/1","doi-asserted-by":"publisher","first-page":"94","DOI":"10.1016\/j.jmst.2021.04.025","volume":"96","author":"Ismail","year":"2022","journal-title":"J. Mater. Sci. Technol."},{"issue":"50","key":"D6TC00262E\/cit9\/1","doi-asserted-by":"publisher","first-page":"47063","DOI":"10.1021\/acsami.9b16499","volume":"11","author":"Kim","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"3","key":"D6TC00262E\/cit10\/1","doi-asserted-by":"publisher","first-page":"915","DOI":"10.1039\/D4MH01182A","volume":"12","author":"Kim","year":"2025","journal-title":"Mater. Horiz."},{"key":"D6TC00262E\/cit11\/1","doi-asserted-by":"publisher","first-page":"277","DOI":"10.1016\/j.jallcom.2019.05.114","volume":"797","author":"Ku","year":"2019","journal-title":"J. Alloys Compd."},{"key":"D6TC00262E\/cit12\/1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1145\/3400302.3415663","author":"Li","year":"2020","unstructured":"B.Li ,  Y.Wang  and  Y.Chen , HitM: High-Throughput ReRAM-Based PIM for Multi-Modal Neural Networks. In  Proceedings of the 39th International Conference on Computer-Aided Design , ACM: Virtual Event USA,  2020 , pp  17 10.1145\/3400302.3415663"},{"key":"D6TC00262E\/cit13\/1","doi-asserted-by":"publisher","first-page":"1087","DOI":"10.1145\/3489517.3530575","author":"Liu","year":"2022","unstructured":"F.Liu ,  W.Zhao ,  Y.Chen ,  Z.Wang ,  Z.He ,  R.Yang ,  Q.Tang ,  T.Yang ,  C.Zhuo  and  L.Jiang , PIM-DH: ReRAM-Based Processing-in-Memory Architecture for Deep Hashing Acceleration. In  Proceedings of the 59th ACM\/IEEE Design Automation Conference , ACM: San Francisco California,  2022 , pp  10871092 10.1145\/3489517.3530575"},{"key":"D6TC00262E\/cit14\/1","doi-asserted-by":"publisher","first-page":"1271956","DOI":"10.3389\/fnins.2023.1271956","volume":"17","author":"Maldonado","year":"2023","journal-title":"Front. Neurosci."},{"issue":"1","key":"D6TC00262E\/cit15\/1","doi-asserted-by":"publisher","first-page":"326","DOI":"10.1080\/14686996.2021.1911277","volume":"22","author":"Wang","year":"2021","journal-title":"Sci. Technol. Adv. Mater."},{"key":"D6TC00262E\/cit16\/1","doi-asserted-by":"publisher","first-page":"109294","DOI":"10.1016\/j.sse.2025.109294","volume":"231","author":"Garc\u00eda","year":"2026","journal-title":"Solid-State Electron."},{"key":"D6TC00262E\/cit17\/1","doi-asserted-by":"publisher","first-page":"108085","DOI":"10.1016\/j.sse.2021.108085","volume":"183","author":"Vinuesa","year":"2021","journal-title":"Solid-State Electron."},{"issue":"1","key":"D6TC00262E\/cit18\/1","doi-asserted-by":"publisher","first-page":"10022","DOI":"10.1038\/srep10022","volume":"5","author":"Chen","year":"2015","journal-title":"Sci. Rep."},{"issue":"21","key":"D6TC00262E\/cit19\/1","doi-asserted-by":"publisher","first-page":"4493","DOI":"10.1002\/adfm.201200073","volume":"22","author":"Hota","year":"2012","journal-title":"Adv. Funct. Mater."},{"issue":"44","key":"D6TC00262E\/cit20\/1","doi-asserted-by":"publisher","first-page":"445301","DOI":"10.1088\/1361-6463\/ab35bf","volume":"52","author":"Krishnan","year":"2019","journal-title":"J. Phys. Appl. Phys."},{"key":"D6TC00262E\/cit21\/1","doi-asserted-by":"publisher","first-page":"129035","DOI":"10.1016\/j.matchemphys.2024.129035","volume":"315","author":"Dehury","year":"2024","journal-title":"Mater. Chem. Phys."},{"issue":"3","key":"D6TC00262E\/cit22\/1","doi-asserted-by":"publisher","first-page":"877","DOI":"10.3390\/ma15030877","volume":"15","author":"Kukli","year":"2022","journal-title":"Materials"},{"issue":"2","key":"D6TC00262E\/cit23\/1","doi-asserted-by":"publisher","first-page":"489","DOI":"10.1007\/s42247-022-00356-0","volume":"5","author":"Napolean","year":"2022","journal-title":"Emergent Mater."},{"issue":"7","key":"D6TC00262E\/cit24\/1","doi-asserted-by":"publisher","first-page":"075701","DOI":"10.1063\/5.0213173","volume":"136","author":"Pan","year":"2024","journal-title":"J. Appl. Phys."},{"issue":"7","key":"D6TC00262E\/cit25\/1","doi-asserted-by":"publisher","first-page":"072102","DOI":"10.1063\/1.4893568","volume":"105","author":"Ryu","year":"2014","journal-title":"Appl. Phys. Lett."},{"issue":"13","key":"D6TC00262E\/cit26\/1","doi-asserted-by":"publisher","first-page":"16462","DOI":"10.1021\/acsami.3c19523","volume":"16","author":"Shin","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"D6TC00262E\/cit27\/1","doi-asserted-by":"publisher","first-page":"822","DOI":"10.1016\/j.apsusc.2017.11.016","volume":"434","author":"Sokolov","year":"2018","journal-title":"Appl. Surf. Sci."},{"issue":"4","key":"D6TC00262E\/cit28\/1","doi-asserted-by":"publisher","first-page":"045202","DOI":"10.1088\/0957-4484\/21\/4\/045202","volume":"21","author":"Wang","year":"2010","journal-title":"Nanotechnology"},{"issue":"40","key":"D6TC00262E\/cit29\/1","doi-asserted-by":"publisher","first-page":"12682","DOI":"10.1039\/C9TC04880D","volume":"7","author":"Wang","year":"2019","journal-title":"J. Mater. Chem. C"},{"key":"D6TC00262E\/cit30\/1","doi-asserted-by":"publisher","first-page":"149386","DOI":"10.1016\/j.apsusc.2021.149386","volume":"551","author":"Yong","year":"2021","journal-title":"Appl. Surf. Sci."},{"issue":"6","key":"D6TC00262E\/cit31\/1","doi-asserted-by":"publisher","first-page":"063007","DOI":"10.1149\/2162-8777\/ade3a3","volume":"14","author":"Zeinati","year":"2025","journal-title":"ECS J. Solid State Sci. Technol."},{"issue":"8","key":"D6TC00262E\/cit32\/1","doi-asserted-by":"publisher","first-page":"4360","DOI":"10.1021\/nl501249q","volume":"14","author":"Hu","year":"2014","journal-title":"Nano Lett."},{"issue":"8","key":"D6TC00262E\/cit33\/1","doi-asserted-by":"publisher","first-page":"082903","DOI":"10.1063\/1.4793577","volume":"102","author":"Kim","year":"2013","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"D6TC00262E\/cit34\/1","doi-asserted-by":"publisher","first-page":"148","DOI":"10.1038\/nnano.2009.456","volume":"5","author":"Kwon","year":"2010","journal-title":"Nat. Nanotechnol."},{"issue":"12","key":"D6TC00262E\/cit35\/1","doi-asserted-by":"publisher","first-page":"124511","DOI":"10.1063\/1.3596576","volume":"109","author":"Oh","year":"2011","journal-title":"J. Appl. Phys."},{"issue":"8","key":"D6TC00262E\/cit36\/1","doi-asserted-by":"publisher","first-page":"084104","DOI":"10.1063\/1.3567915","volume":"109","author":"Lin","year":"2011","journal-title":"J. Appl. Phys."},{"key":"D6TC00262E\/cit37\/1","doi-asserted-by":"publisher","first-page":"37","DOI":"10.1016\/j.microrel.2016.05.013","volume":"63","author":"Jiang","year":"2016","journal-title":"Microelectron. Reliab."},{"key":"D6TC00262E\/cit38\/1","doi-asserted-by":"publisher","first-page":"115910","DOI":"10.1016\/j.chaos.2024.115910","volume":"191","author":"Park","year":"2025","journal-title":"Chaos, Solitons Fractals"},{"issue":"1","key":"D6TC00262E\/cit39\/1","doi-asserted-by":"publisher","first-page":"393","DOI":"10.1186\/s11671-017-2164-z","volume":"12","author":"Zhang","year":"2017","journal-title":"Nanoscale Res. Lett."},{"issue":"6","key":"D6TC00262E\/cit40\/1","doi-asserted-by":"publisher","first-page":"63203","DOI":"10.1007\/s11467-024-1419-2","volume":"19","author":"Lee","year":"2024","journal-title":"Front. Phys."},{"issue":"15","key":"D6TC00262E\/cit41\/1","doi-asserted-by":"publisher","first-page":"5896","DOI":"10.1039\/D1TC04734E","volume":"10","author":"Athena","year":"2022","journal-title":"J. Mater. Chem. C"},{"key":"D6TC00262E\/cit42\/1","doi-asserted-by":"publisher","first-page":"193","DOI":"10.1016\/j.mee.2013.03.092","volume":"109","author":"Chakrabarti","year":"2013","journal-title":"Microelectron. Eng."},{"issue":"4","key":"D6TC00262E\/cit43\/1","doi-asserted-by":"publisher","first-page":"451","DOI":"10.3390\/coatings11040451","volume":"11","author":"Kim","year":"2021","journal-title":"Coatings"},{"issue":"6","key":"D6TC00262E\/cit44\/1","doi-asserted-by":"publisher","first-page":"G19","DOI":"10.1149\/1.2898184","volume":"11","author":"Fr\u00f6hlich","year":"2008","journal-title":"Electrochem. Solid-State Lett."},{"issue":"7","key":"D6TC00262E\/cit45\/1","doi-asserted-by":"publisher","first-page":"1525","DOI":"10.1016\/j.mee.2011.03.129","volume":"88","author":"Fr\u00f6hlich","year":"2011","journal-title":"Microelectron. Eng."},{"issue":"1","key":"D6TC00262E\/cit46\/1","doi-asserted-by":"publisher","first-page":"548","DOI":"10.1021\/acs.cgd.2c01174","volume":"23","author":"Aarik","year":"2023","journal-title":"Cryst. Growth Des."},{"key":"D6TC00262E\/cit47\/1","doi-asserted-by":"publisher","first-page":"119","DOI":"10.1016\/j.tsf.2016.01.024","volume":"600","author":"Arroval","year":"2016","journal-title":"Thin Solid Films"},{"issue":"1","key":"D6TC00262E\/cit48\/1","doi-asserted-by":"publisher","first-page":"266","DOI":"10.1116\/1.3021030","volume":"27","author":"Fr\u00f6hlich","year":"2009","journal-title":"J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. Process. Meas. Phenom."},{"key":"D6TC00262E\/cit49\/1","doi-asserted-by":"publisher","first-page":"86","DOI":"10.1016\/j.jcrysgro.2015.07.029","volume":"428","author":"M\u00f6ldre","year":"2015","journal-title":"J. Cryst. Growth"},{"issue":"4","key":"D6TC00262E\/cit50\/1","doi-asserted-by":"publisher","first-page":"041130","DOI":"10.1063\/5.0270431","volume":"13","author":"Baunthiyal","year":"2025","journal-title":"APL Mater."},{"issue":"16","key":"D6TC00262E\/cit51\/1","doi-asserted-by":"publisher","first-page":"6870","DOI":"10.1039\/D5TC04544D","volume":"14","author":"Aarik","year":"2026","journal-title":"J. Mater. Chem. C"},{"issue":"2","key":"D6TC00262E\/cit52\/1","doi-asserted-by":"publisher","first-page":"024102","DOI":"10.1063\/1.3462467","volume":"108","author":"Liu","year":"2010","journal-title":"J. Appl. Phys."},{"key":"D6TC00262E\/cit53\/1","doi-asserted-by":"publisher","first-page":"115797","DOI":"10.1016\/j.mseb.2022.115797","volume":"282","author":"Merisalu","year":"2022","journal-title":"Mater. Sci. Eng. B"},{"issue":"5","key":"D6TC00262E\/cit54\/1","doi-asserted-by":"publisher","first-page":"864","DOI":"10.3390\/electronics9050864","volume":"9","author":"P\u00e9rez","year":"2020","journal-title":"Electronics"},{"issue":"36","key":"D6TC00262E\/cit55\/1","doi-asserted-by":"publisher","first-page":"365108","DOI":"10.1088\/1361-6463\/acdae0","volume":"56","author":"Garc\u00eda","year":"2023","journal-title":"J. Phys. Appl. Phys."}],"container-title":["Journal of Materials Chemistry C"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/pubs.rsc.org\/en\/content\/articlepdf\/2026\/TC\/D6TC00262E","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,2]],"date-time":"2026-07-02T16:56:28Z","timestamp":1783011388000},"score":1,"resource":{"primary":{"URL":"https:\/\/xlink.rsc.org\/?DOI=D6TC00262E"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026]]},"references-count":55,"journal-issue":{"issue":"25","published-print":{"date-parts":[[2026,7,2]]}},"URL":"https:\/\/doi.org\/10.1039\/d6tc00262e","relation":{},"ISSN":["2050-7526","2050-7534"],"issn-type":[{"value":"2050-7526","type":"print"},{"value":"2050-7534","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026]]}}}