{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T12:17:14Z","timestamp":1769084234930,"version":"3.49.0"},"reference-count":22,"publisher":"Royal Society of Chemistry (RSC)","issue":"29","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J. Mater. Chem. C"],"published-print":{"date-parts":[[2014]]},"DOI":"10.1039\/c4tc00480a","type":"journal-article","created":{"date-parts":[[2014,4,16]],"date-time":"2014-04-16T09:31:28Z","timestamp":1397640688000},"page":"5787","source":"Crossref","is-referenced-by-count":22,"title":["Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD"],"prefix":"10.1039","volume":"2","author":[{"given":"M. D.","family":"Smith","sequence":"first","affiliation":[]},{"given":"E.","family":"Taylor","sequence":"additional","affiliation":[]},{"given":"T. C.","family":"Sadler","sequence":"additional","affiliation":[]},{"given":"V. Z.","family":"Zubialevich","sequence":"additional","affiliation":[]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"H. N.","family":"Li","sequence":"additional","affiliation":[]},{"given":"J.","family":"O'Connell","sequence":"additional","affiliation":[]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[]},{"given":"J. D.","family":"Holmes","sequence":"additional","affiliation":[]},{"given":"R. W.","family":"Martin","sequence":"additional","affiliation":[]},{"given":"P. J.","family":"Parbrook","sequence":"additional","affiliation":[]}],"member":"292","reference":[{"issue":"3","key":"c4tc00480a-(cit1)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"1505","DOI":"10.1116\/1.2200382","volume":"24","author":"Cywinski","year":"2006","journal-title":"J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct."},{"issue":"3","key":"c4tc00480a-(cit2)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"424","DOI":"10.1002\/pssa.201100416","volume":"209","author":"Naresh-Kumar","year":"2012","journal-title":"Phys. Status Solidi A"},{"issue":"11","key":"c4tc00480a-(cit3)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"1537","DOI":"10.1109\/LED.2011.2166949","volume":"32","author":"Lecourt","year":"2011","journal-title":"IEEE Electron Device Lett."},{"issue":"17","key":"c4tc00480a-(cit4)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"173505","DOI":"10.1063\/1.3507885","volume":"97","author":"Mikulics","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"c4tc00480a-(cit5)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"137","DOI":"10.1016\/j.jcrysgro.2013.10.006","volume":"388","author":"Choi","year":"2014","journal-title":"J. Cryst. Growth"},{"key":"c4tc00480a-(cit6)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"143","DOI":"10.1016\/j.jcrysgro.2013.09.046","volume":"388","author":"Kim","year":"2014","journal-title":"J. Cryst. Growth"},{"key":"c4tc00480a-(cit7)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"04CF02","DOI":"10.7567\/JJAP.52.04CF02","volume":"52","author":"Hiroki","year":"2013","journal-title":"Jpn. J. Appl. Phys."},{"key":"c4tc00480a-(cit8)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"115502","DOI":"10.7567\/JJAP.51.115502","volume":"51","author":"Lu","year":"2012","journal-title":"Jpn. J. Appl. Phys."},{"key":"c4tc00480a-(cit9)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"36","DOI":"10.1016\/j.jcrysgro.2013.07.034","volume":"382","author":"Hiroki","year":"2013","journal-title":"J. Cryst. Growth"},{"key":"c4tc00480a-(cit10)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"25","DOI":"10.1016\/j.jcrysgro.2012.03.035","volume":"348","author":"Zhu","year":"2012","journal-title":"J. Cryst. Growth"},{"key":"c4tc00480a-(cit11)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"081602","DOI":"10.1063\/1.4818645","volume":"103","author":"Smith","year":"2013","journal-title":"Appl. Phys. Lett."},{"issue":"6","key":"c4tc00480a-(cit13)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"065011","DOI":"10.1088\/0268-1242\/28\/6\/065011","volume":"28","author":"Taylor","year":"2013","journal-title":"Semicond. Sci. Technol."},{"issue":"4","key":"c4tc00480a-(cit14)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"665","DOI":"10.1002\/pssa.200304089","volume":"201","author":"Martin","year":"2004","journal-title":"Phys. Status Solidi A"},{"issue":"1","key":"c4tc00480a-(cit15)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"100","DOI":"10.1016\/j.jcrysgro.2004.05.040","volume":"269","author":"O'Donnell","year":"2004","journal-title":"J. Cryst. Growth"},{"issue":"7","key":"c4tc00480a-(cit16)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"2478","DOI":"10.1002\/pssc.200303515","volume":"0","author":"Amabile","year":"2003","journal-title":"Phys. Status Solidi C"},{"issue":"0","key":"c4tc00480a-(cit17)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"105","DOI":"10.1016\/j.nimb.2011.07.051","volume":"273","author":"Magalh\u00e3es","year":"2012","journal-title":"Nucl. Instrum. Methods Phys. Res., Sect. B"},{"issue":"2","key":"c4tc00480a-(cit18)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"291","DOI":"10.1063\/1.119524","volume":"71","author":"Barradas","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"c4tc00480a-(cit19)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"085501","DOI":"10.1103\/PhysRevLett.97.085501","volume":"97","author":"Lorenz","year":"2006","journal-title":"Phys. Rev. Lett."},{"issue":"4","key":"c4tc00480a-(cit20)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"232","DOI":"10.1002\/xrs.903","volume":"35","author":"Barradas","year":"2006","journal-title":"X-Ray Spectrom."},{"issue":"4","key":"c4tc00480a-(cit21)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"254","DOI":"10.1002\/(SICI)1096-9918(199704)25:4<254::AID-SIA232>3.0.CO;2-F","volume":"25","author":"Jeynes","year":"1997","journal-title":"Surf. Interface Anal."},{"key":"c4tc00480a-(cit22)\/*[position()=1]","author":"Taylor","journal-title":"J. Appl. Phys."},{"issue":"3","key":"c4tc00480a-(cit23)\/*[position()=1]","doi-asserted-by":"crossref","first-page":"378","DOI":"10.1109\/LED.2013.2238503","volume":"34","author":"Ronghua Wang","year":"2013","journal-title":"IEEE Electron Device Lett."}],"container-title":["Journal of Materials Chemistry C"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/pubs.rsc.org\/en\/content\/articlepdf\/2014\/TC\/C4TC00480A","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,4,17]],"date-time":"2024-04-17T16:27:21Z","timestamp":1713371241000},"score":1,"resource":{"primary":{"URL":"https:\/\/xlink.rsc.org\/?DOI=c4tc00480a"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014]]},"references-count":22,"journal-issue":{"issue":"29","published-print":{"date-parts":[[2014]]}},"URL":"https:\/\/doi.org\/10.1039\/c4tc00480a","relation":{},"ISSN":["2050-7526","2050-7534"],"issn-type":[{"value":"2050-7526","type":"print"},{"value":"2050-7534","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014]]}}}