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The paper reports +19.8\u2009dBm of peak power at the output and power\u2010added efficiency (PAE) of 17% is attained by the designed circuit. The 1\u2010dB compression point linearity was +18.6\u2009dBm. The adjacent channel power ratio (ACPR) simulations were performed for the different communication standards like 802_11n_40M, CDMA, IS\u201095, and 802_11n_20M. Design specification variations of the amplifier have been analyzed over five process corners and simulations were performed to validate compliance with standards and robustness of the designed circuit. Monte Carlo simulation were performed to assess the performance over statistical variability of PAE and power gain. It is believed that this linearization design and the verifications used are done for the first time on a 65\u2010nm RFCMOS process.<\/jats:p>","DOI":"10.1049\/2023\/2265697","type":"journal-article","created":{"date-parts":[[2023,10,31]],"date-time":"2023-10-31T21:50:08Z","timestamp":1698789008000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization"],"prefix":"10.1049","volume":"2023","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2501-2505","authenticated-orcid":false,"given":"N. 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