{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,9]],"date-time":"2025-12-09T15:50:31Z","timestamp":1765295431372,"version":"build-2065373602"},"reference-count":20,"publisher":"Institution of Engineering and Technology (IET)","issue":"1","license":[{"start":{"date-parts":[[2023,10,31]],"date-time":"2023-10-31T00:00:00Z","timestamp":1698710400000},"content-version":"vor","delay-in-days":303,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100013068","name":"Key Technologies Research and Development Program of Guangzhou Municipality","doi-asserted-by":"publisher","award":["2021B0101280001","2022B0101180001"],"award-info":[{"award-number":["2021B0101280001","2022B0101180001"]}],"id":[{"id":"10.13039\/501100013068","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["ietresearch.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["IET Circuits, Devices &amp; Systems"],"published-print":{"date-parts":[[2023,1]]},"abstract":"<jats:p>\n                    In this work, the effects of the mini\u2010local oxidation of silicon (LOCOS) field plate\u2019s bottom physical profile on the devices\u2019 breakdown performance are analyzed through technology computer\u2010aided design simulations. It is indicated that the \u201cabrupt\u201d bottom profile could certainly do with an optimization. This paper introduces an effective process improvement method by etching bias power adjustment and time reduction. The upgradation of the field plate physical profile has been proved by transmission electron microscope cross\u2010section analysis. The angle for the bottom surface of mini\u2010LOCOS field plate\n                    <jats:italic>\u03b8<\/jats:italic>\n                    <jats:sub>2<\/jats:sub>\n                    is improved from 11.9\u00b0 to 12.6\u00b0, and the thickness ratio of\n                    <jats:italic>H<\/jats:italic>\n                    <jats:sub>up<\/jats:sub>\n                    \/\n                    <jats:italic>H<\/jats:italic>\n                    <jats:sub>bottom<\/jats:sub>\n                    (field plate oxide thickness for the upper and bottom, respectively) is increased from 71.8% to 76.6%. Finally, the optimized laterally diffused metal oxide semiconductor devices have been fabricated, and both figure of merit curves and safe operation area curves are measured. The specific on\u2010resistance\n                    <jats:italic>R<\/jats:italic>\n                    <jats:sub>on,sp<\/jats:sub>\n                    could achieve as low as 11.3\u2009m\n                    <jats:italic>\u03a9<\/jats:italic>\n                    \u2009mm\n                    <jats:sup>2<\/jats:sup>\n                    , while breakdown voltage\n                    <jats:italic>BV<\/jats:italic>\n                    <jats:sub>ds,max<\/jats:sub>\n                    arrives at 37.4\u2009V, which is nearly 19.3% improved.\n                  <\/jats:p>","DOI":"10.1049\/2023\/5298361","type":"journal-article","created":{"date-parts":[[2023,10,31]],"date-time":"2023-10-31T20:50:06Z","timestamp":1698785406000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["A Process Optimization Method of the Mini\u2010LOCOS Field Plate Profile for Improving Electrical Characteristics of LDMOS Device"],"prefix":"10.1049","volume":"2023","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-1274-3789","authenticated-orcid":false,"given":"Shaoxin","family":"Yu","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7345-3479","authenticated-orcid":false,"given":"Weiheng","family":"Shao","sequence":"additional","affiliation":[]},{"given":"Pei-Xiong","family":"Gao","sequence":"additional","affiliation":[]},{"given":"Xiang","family":"Li","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7247-8420","authenticated-orcid":false,"given":"Rongsheng","family":"Chen","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0009-0003-3489-8242","authenticated-orcid":false,"given":"Bin","family":"Zhao","sequence":"additional","affiliation":[]}],"member":"265","published-online":{"date-parts":[[2023,10,31]]},"reference":[{"key":"e_1_2_8_1_2","doi-asserted-by":"crossref","unstructured":"KimJ. YooJ. H. JungJ. KimK. andKimD. S. Novel optimization method using machine-learning for device and process competitiveness of BCD process 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2020.","DOI":"10.23919\/SISPAD49475.2020.9241590"},{"key":"e_1_2_8_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3072371"},{"key":"e_1_2_8_3_2","article-title":"Design considerations of a novel triple oxide trench deep gate ldmos to improve self-heating effect and breakdown voltage","volume":"3","author":"Gavoshani A.","year":"2022","journal-title":"IET Circuits, Devices & Systems"},{"key":"e_1_2_8_4_2","doi-asserted-by":"crossref","unstructured":"HebertF. ParvarandehP. LiM. ZhangG. andKooJ. M. Building blocks of past present and future BCD technologies 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 2021.","DOI":"10.23919\/ISPSD50666.2021.9452276"},{"key":"e_1_2_8_5_2","doi-asserted-by":"crossref","unstructured":"WangY. DuanB. andYangY. Experimental of folded accumulation lateral double-diffused transistor with low specific on resistance 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 2021.","DOI":"10.23919\/ISPSD50666.2021.9452249"},{"key":"e_1_2_8_6_2","doi-asserted-by":"crossref","unstructured":"KimD. LeeK. KimJ. ChoiJ. andChoI. The lowest on-resistance and robust 130\u2009nm BCDMOS technology implementation utilizing HFP and DPN for mobile PMIC applications 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) May 2019.","DOI":"10.1109\/ISPSD.2019.8757571"},{"key":"e_1_2_8_7_2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2871501"},{"key":"e_1_2_8_8_2","doi-asserted-by":"crossref","unstructured":"HaoY. ChingS. P. LiewM. HoelkeA. EckoldtU. andPfostM. 40 v to 100 v NLDMOS built on thin box SOI with high energy capability state of the art Rdson\/BVdss and robust performance 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs May 2018 483\u2013486 https:\/\/doi.org\/10.1109\/ISPSD.2018.8393708 2-s2.0-85049995851.","DOI":"10.1109\/ISPSD.2018.8393708"},{"key":"e_1_2_8_9_2","doi-asserted-by":"publisher","DOI":"10.1049\/cds2.12158"},{"key":"e_1_2_8_10_2","doi-asserted-by":"crossref","unstructured":"LinF. YangB. SunG. ChenS. LiC. HuangY. WangQ. andLiuS. A study of n-LDMOS offstate breakdown degradation with 0.18\u03bcm BCD technology 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) July 2019 1\u20134.","DOI":"10.1109\/IPFA47161.2019.8984858"},{"key":"e_1_2_8_11_2","doi-asserted-by":"crossref","unstructured":"TannenbaumA. MisteleD. andStavY. Optimization of integrated 0.18\u03bcm nLDMOS for power management ICs rated at 40\u201360 V 2017 IEEE International Conference on Microwaves Antennas Communications and Electronic Systems (COMCAS) 2017.","DOI":"10.1109\/COMCAS.2017.8244821"},{"key":"e_1_2_8_12_2","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2019.0552"},{"key":"e_1_2_8_13_2","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2018.5302"},{"key":"e_1_2_8_14_2","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/ab6960"},{"key":"e_1_2_8_15_2","doi-asserted-by":"crossref","unstructured":"GiulianoF. DepetroR. CroceG. TallaricoA. N. andManziniS. TCAD predictions of hot-electron injection in p-type LDMOS transistors ESSDERC. 2019 - 49th European Solid-State Device Research Conference (ESSDERC) September 2019.","DOI":"10.1109\/ESSDERC.2019.8901703"},{"key":"e_1_2_8_16_2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2023.3263868"},{"key":"e_1_2_8_17_2","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2023.3243578"},{"key":"e_1_2_8_18_2","doi-asserted-by":"crossref","unstructured":"LeeJ. LeeK. JungI. KimH. andLeeT. 0.13\u2009\u03bcm modular BCD technology enable to embedding high density E2PROM RF and hall sensor suitable for IoT application 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 2016.","DOI":"10.1109\/ISPSD.2016.7520867"},{"key":"e_1_2_8_19_2","doi-asserted-by":"crossref","unstructured":"LeeK. JeonH. ChoB. ChoJ. andLeeT. 0.35\u03bcm 30\u2009V fully isolated and low-Ron NLDMOS for DC-DC applications Power Semiconductor Devices and ICs (ISPSD) 2013 25th International Symposium on May 2013.","DOI":"10.1109\/ISPSD.2013.6694454"},{"key":"e_1_2_8_20_2","doi-asserted-by":"crossref","unstructured":"HuangT.-Y. LiaoW.-Y. YangC.-Y. HuangC.-H. YehW.-C. HuangC.-F. LoK.-H. ChiuC.-W. KaoT.-C. SuH.-D. andChangK.-C. 0.18\u2009\u03bcm BCD technology with best-in-class LDMOS from 6 to 45 V IEEE 26th International Symposium on Power Semiconductor Devices & IET Research Journals 2015 The Institution of Engineering and Technology 179\u2013181.","DOI":"10.1109\/ISPSD.2014.6856005"}],"container-title":["IET Circuits, Devices &amp; Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/ietcds\/2023\/5298361.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/ietcds\/2023\/5298361.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/pdf\/10.1049\/2023\/5298361","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,11,5]],"date-time":"2025-11-05T17:06:42Z","timestamp":1762362402000},"score":1,"resource":{"primary":{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/10.1049\/2023\/5298361"}},"subtitle":[],"editor":[{"given":"Yang","family":"Xu","sequence":"additional","affiliation":[]}],"short-title":[],"issued":{"date-parts":[[2023,1]]},"references-count":20,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2023,1]]}},"alternative-id":["10.1049\/2023\/5298361"],"URL":"https:\/\/doi.org\/10.1049\/2023\/5298361","archive":["Portico"],"relation":{},"ISSN":["1751-858X","1751-8598"],"issn-type":[{"type":"print","value":"1751-858X"},{"type":"electronic","value":"1751-8598"}],"subject":[],"published":{"date-parts":[[2023,1]]},"assertion":[{"value":"2023-05-29","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2023-09-04","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2023-10-31","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"5298361"}}