{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T22:20:07Z","timestamp":1773008407469,"version":"3.50.1"},"reference-count":52,"publisher":"Institution of Engineering and Technology (IET)","issue":"1","license":[{"start":{"date-parts":[[2025,8,27]],"date-time":"2025-08-27T00:00:00Z","timestamp":1756252800000},"content-version":"vor","delay-in-days":238,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003995","name":"Natural Science Foundation of Anhui Province","doi-asserted-by":"publisher","award":["2308085QF214"],"award-info":[{"award-number":["2308085QF214"]}],"id":[{"id":"10.13039\/501100003995","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62274001"],"award-info":[{"award-number":["62274001"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["ietresearch.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["IET Circuits, Devices &amp; Systems"],"published-print":{"date-parts":[[2025,1]]},"abstract":"<jats:p>The charge pump phase\u2010locked loop (CP\u2010PLL) is a critical component in modern mixed\u2010signal electronics, widely used for clock generation, synchronization, and frequency synthesis in digital and wireless applications. However, its performance is significantly impacted by nonideal effects, particularly the current mismatch of the charge pump (CP) and the frequency variation of oscillator, both of which are highly sensitive to temperature fluctuations. To address these challenges, this work leverages the positive temperature coefficient (PTC) of the drain\u2010source on\u2010state resistance in CMOS and the negative temperature coefficient (NTC) of the magnetic tunnel junction (MTJ). Using 28\u2009nm CMOS technology, we analyze and simulate the current mismatch of the CP across a wide temperature range, achieving a current mismatch of less than 0.3%. Furthermore, the proposed approach significantly improves the frequency stability of the ring oscillator. Simulation results validate the effectiveness of our design, demonstrating that the MTJ compensates for 90% of the output frequency drift over a temperature range from \u221280 to 125\u00b0C.<\/jats:p>","DOI":"10.1049\/cds2\/1773323","type":"journal-article","created":{"date-parts":[[2025,8,27]],"date-time":"2025-08-27T07:20:18Z","timestamp":1756279218000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Adaptive Temperature\u2010Compensation of Charge\u2010Pump PLL\u2013Based MTJ\/CMOS for Frequency Stability"],"prefix":"10.1049","volume":"2025","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2408-5048","authenticated-orcid":false,"given":"Chunyu","family":"Peng","sequence":"first","affiliation":[]},{"given":"Jingxue","family":"Zhong","sequence":"additional","affiliation":[]},{"given":"Yingxue","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Weizhe","family":"Tan","sequence":"additional","affiliation":[]},{"given":"Chengxing","family":"Dai","sequence":"additional","affiliation":[]},{"given":"Xin","family":"Li","sequence":"additional","affiliation":[]},{"given":"Xiulong","family":"Wu","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7327-6759","authenticated-orcid":false,"given":"Yongliang","family":"Zhou","sequence":"additional","affiliation":[]}],"member":"265","published-online":{"date-parts":[[2025,8,27]]},"reference":[{"key":"e_1_2_9_1_2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2279175"},{"key":"e_1_2_9_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3199997"},{"key":"e_1_2_9_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3010768"},{"key":"e_1_2_9_4_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2020.2992601"},{"key":"e_1_2_9_5_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2015.2512759"},{"key":"e_1_2_9_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2009.2031746"},{"key":"e_1_2_9_7_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2021.105279"},{"key":"e_1_2_9_8_2","doi-asserted-by":"crossref","unstructured":"SaraswatM. K. MahadevR. YerragudiS. B. LeK. M. andAbbasZ. A Process and Temperature Compensation Technique for Ring-VCO in Charge-Pump PLL 2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS) 2024 Springfield MA USA IEEE 586\u2013590.","DOI":"10.1109\/MWSCAS60917.2024.10658924"},{"key":"e_1_2_9_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2022.154195"},{"key":"e_1_2_9_10_2","doi-asserted-by":"crossref","unstructured":"AndersJ. BaderS. andDietlM. et al.A \u2212245 dB FOM 48 fs rms Jitter Semi-Digital PLL With Intrinsic Temperature Compensation in 130 nm CMOS 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) 2017 Seoul Korea (South) IEEE 325\u2013328.","DOI":"10.1109\/ASSCC.2017.8240282"},{"key":"e_1_2_9_11_2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2801829"},{"key":"e_1_2_9_12_2","doi-asserted-by":"publisher","DOI":"10.1002\/mop.31490"},{"key":"e_1_2_9_13_2","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-016-0854-6"},{"key":"e_1_2_9_14_2","doi-asserted-by":"crossref","unstructured":"WuG. SunK. andGuoS. et al.A Low-Voltage and Temperature Compensated Ring VCO Design 2014 IEEE Dallas Circuits and Systems Conference (DCAS) 2014 IEEE 1\u20134.","DOI":"10.1109\/DCAS.2014.6965321"},{"key":"e_1_2_9_15_2","doi-asserted-by":"crossref","unstructured":"ChandraR.andAnurag Design and Analysis of Charge Pump for PLL at 90nm CMOS Technology 2015 2nd International Conference on Recent Advances in Engineering and Computational Sciences 2015 Chandigarh India IEEE 1\u20135.","DOI":"10.1109\/RAECS.2015.7453311"},{"key":"e_1_2_9_16_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2926512"},{"key":"e_1_2_9_17_2","doi-asserted-by":"crossref","unstructured":"LotfyA. GhoneimaM. andAbdel-MoneumM. A Fast Locking Hybrid TDC-BB ADPLL Utilizing Proportional Derivative Digital Loop Filter and Power Gated DCO 2016 IEEE International Symposium on Circuits and Systems (ISCAS) 2016 Montreal QC Canada IEEE 1646\u20131649.","DOI":"10.1109\/ISCAS.2016.7538882"},{"key":"e_1_2_9_18_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3040346"},{"key":"e_1_2_9_19_2","doi-asserted-by":"crossref","unstructured":"LiuC. XiaoX. GuY. andLiY. Research on Closed-Loop TMR Current Sensor With Temperature Compensation Based on Reference Magnetic Field 2023 3rd International Conference on Energy Power and Electrical Engineering (EPEE) 2023 Wuhan China IEEE 720\u2013725.","DOI":"10.1109\/EPEE59859.2023.10352029"},{"key":"e_1_2_9_20_2","doi-asserted-by":"crossref","unstructured":"AdesinaN. O. KhanM. A. U. andSrivastavaA. High Q-Factor Graphene-Based Inductor CMOS LC Voltage Controlled Oscillator for PLL Applications 2021 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE) 2021 ON Canada IEEE 1\u20137.","DOI":"10.1109\/CCECE53047.2021.9569050"},{"key":"e_1_2_9_21_2","doi-asserted-by":"crossref","unstructured":"TanakaT. FurukawaH. andUedaD. A GaAs Power FET With Zero-Temperature-Coefficient International Electron Devices Meeting. IEDM Technical Digest 1997 Washington DC USA IEEE 557\u2013560.","DOI":"10.1109\/IEDM.1997.650447"},{"key":"e_1_2_9_22_2","doi-asserted-by":"publisher","DOI":"10.3390\/mi15101271"},{"key":"e_1_2_9_23_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.egyr.2022.08.062"},{"key":"e_1_2_9_24_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3327461"},{"key":"e_1_2_9_25_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3036011"},{"key":"e_1_2_9_26_2","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2017.2762699"},{"key":"e_1_2_9_27_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2024.3425935"},{"key":"e_1_2_9_28_2","unstructured":"What-is-a-tunnel junction 2025 [EB\/OL]. [Online] [Accessed: 20 March]https:\/\/www.netinbag.com\/en\/manufacturing\/what-is-a-tunnel-junction.html."},{"key":"e_1_2_9_29_2","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/TMAG.2018.2877446","article-title":"Low-Temperature Performance of Nanoscale Perpen- Dicular Magnetic Tunnel Junctions With Double Mgo-Interface Free Layer","volume":"55","author":"Cao K.","year":"2019","journal-title":"IEEE Transactions on Magnetics"},{"key":"e_1_2_9_30_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2011.2180441"},{"key":"e_1_2_9_31_2","doi-asserted-by":"crossref","unstructured":"ZhouY. ZhongJ. DaiC. SunY. LiX. andPengC. MTJ Based Compensation for Charge Pump Temperature Drift 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) 2024 Zhuhai China IEEE 1\u20133.","DOI":"10.1109\/ICSICT62049.2024.10831476"},{"key":"e_1_2_9_32_2","doi-asserted-by":"publisher","DOI":"10.1109\/LASCAS51355.2021.9459174"},{"key":"e_1_2_9_33_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2924581"},{"key":"e_1_2_9_34_2","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2022.3140457"},{"key":"e_1_2_9_35_2","doi-asserted-by":"crossref","unstructured":"XieZ. XingX. FengH. andGielenG. A High-Precision Delay Locked Loop With Current Mismatch Cal-iBration in 40nm CMOS 2023 6th International Conference on Electronics Technology (ICET) 2023 Chengdu China IEEE 1062\u20131066.","DOI":"10.1109\/ICET58434.2023.10211994"},{"key":"e_1_2_9_36_2","doi-asserted-by":"crossref","unstructured":"JiS. ZhaoY. XuW. YanN. andMinH. A Novel Charge Pump With Ultra-Low Current Mismatch and Variation for PLL 2020 IEEE International Symposium on Circuits and Systems (ISCAS) 2020 Seville Spain IEEE 1\u20134.","DOI":"10.1109\/ISCAS45731.2020.9180830"},{"key":"e_1_2_9_37_2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-031-64381-1_7"},{"key":"e_1_2_9_38_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.chip.2023.100082"},{"key":"e_1_2_9_39_2","doi-asserted-by":"crossref","unstructured":"BeckersA. JazaeriF. andEnzC. Cryogenic MOSFET Threshold Voltage Model ESSDERC. 2019\u201449th European Solid-State Device Research Conference (ESSDERC) 2019 Cracow Poland IEEE 94\u201397.","DOI":"10.1109\/ESSDERC.2019.8901806"},{"key":"e_1_2_9_40_2","doi-asserted-by":"crossref","unstructured":"VosooghiB.andChenJ. A High-Temperature Model of MOSFET Characteristics in 0.13 \u2212\u03bcm Bulk CMOS 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) 2018 Shanghai China IEEE 80\u201385.","DOI":"10.1109\/ICAM.2018.8596520"},{"key":"e_1_2_9_41_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2012.2215751"},{"key":"e_1_2_9_42_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2719685"},{"key":"e_1_2_9_43_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2726100"},{"key":"e_1_2_9_44_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3036454"},{"key":"e_1_2_9_45_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3261182"},{"key":"e_1_2_9_46_2","doi-asserted-by":"crossref","unstructured":"LitongN. ZhigongW. LuT. JunliangW. andLuosiG. A CMOS Charge Pump With Dual Compensation Amplifiers for Phase-Locked Loops Synthesizer 2015 IEEE 11th International Conference on ASIC (ASICON) 2015 Chengdu China IEEE 1\u20134.","DOI":"10.1109\/ASICON.2015.7517128"},{"key":"e_1_2_9_47_2","doi-asserted-by":"crossref","unstructured":"BiswasD. Charge Pump With Low Current Mismatch for PLL Applications 2021 IEEE International Conference on Electronics Computing and Communica- tion Technologies (CONECCT) 2021 Bangalore India IEEE 1\u20134.","DOI":"10.1109\/CONECCT52877.2021.9622662"},{"key":"e_1_2_9_48_2","doi-asserted-by":"crossref","unstructured":"ChangY. RozenblitD. SaeidiB. andLeeteJ. A Temperature Compensated VCO Using Feed-Forward Gain Multiplication for Cellular Applications 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2015 Phoenix AZ USA IEEE 187\u2013190.","DOI":"10.1109\/RFIC.2015.7337736"},{"key":"e_1_2_9_49_2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3028376"},{"key":"e_1_2_9_50_2","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126618501864"},{"key":"e_1_2_9_51_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2407753"},{"key":"e_1_2_9_52_2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2557807"}],"container-title":["IET Circuits, Devices &amp; Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/pdf\/10.1049\/cds2\/1773323","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/full-xml\/10.1049\/cds2\/1773323","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/pdf\/10.1049\/cds2\/1773323","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T20:21:47Z","timestamp":1773001307000},"score":1,"resource":{"primary":{"URL":"https:\/\/ietresearch.onlinelibrary.wiley.com\/doi\/10.1049\/cds2\/1773323"}},"subtitle":[],"editor":[{"given":"Ahmed M.","family":"Soliman","sequence":"additional","affiliation":[]}],"short-title":[],"issued":{"date-parts":[[2025,1]]},"references-count":52,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2025,1]]}},"alternative-id":["10.1049\/cds2\/1773323"],"URL":"https:\/\/doi.org\/10.1049\/cds2\/1773323","archive":["Portico"],"relation":{},"ISSN":["1751-858X","1751-8598"],"issn-type":[{"value":"1751-858X","type":"print"},{"value":"1751-8598","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,1]]},"assertion":[{"value":"2025-05-07","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-08-01","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-08-27","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"1773323"}}