{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T22:20:34Z","timestamp":1773008434142,"version":"3.50.1"},"reference-count":19,"publisher":"Institution of Engineering and Technology (IET)","issue":"1","license":[{"start":{"date-parts":[[2025,3,18]],"date-time":"2025-03-18T00:00:00Z","timestamp":1742256000000},"content-version":"vor","delay-in-days":76,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["ietresearch.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["IET Circuits, Devices &amp; Systems"],"published-print":{"date-parts":[[2025,1]]},"abstract":"<jats:p>\n                    The proposed research paper focuses on the study of fully depleted silicon (Si)\u2010on\u2010insulator negative capacitance metal oxide\u2010semiconductor field\u2010effect transistor (FDSOI\u2010NC\u2010MOSFET) performance for biosensor and digital circuit applications. The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI\u2010NC\u2010MOSFETs compared to conventional planar MOSFETs. Using TCAD software, the proposed device is simulated and analyzed under various parameter conditions (parameters like temperature, channel thickness, input supply voltages, and channel doping levels). Later, the proposed device is also designed for different biomolecular structures to analyze the selectivity and sensitivity behavior of the device. Sensitivity is the change in electrical characteristics in response to applied external stimuli or parameters like current and voltages. Variations in these parameters will affect the operating region of the device, thereby, the choice of parameters in achieving the best performance will depend on the operating conditions and device applications. NC\u2010MOSFET with FE materials can obtain an acceptable on\/off current ratio by lowering the off current and can achieve an adequate subthreshold swing (SS), thus, observed that the NC\u2010MOSFET device has enhanced performance and transfer characteristics in comparison to planar MOSFET. For\n                    <jats:italic>K<\/jats:italic>\n                    \u2009=\u20094, at an input voltage of 0.25\u2009V, the\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    \/\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>off<\/jats:sub>\n                    ratio was 6.21\u2009\u00d7\u200910\n                    <jats:sup>5<\/jats:sup>\n                    and the sensitivity was 6.20\u2009\u00d7\u200910\n                    <jats:sup>7<\/jats:sup>\n                    and at 0.5\u2009V, these values rise to 8.07\u2009\u00d7\u200910\n                    <jats:sup>5<\/jats:sup>\n                    and 8.073\u2009\u00d7\u200910\n                    <jats:sup>7<\/jats:sup>\n                    , respectively. Similarly for\n                    <jats:italic>K<\/jats:italic>\n                    \u2009=\u20096 and at an input voltage of 0.25\u2009V, we observed an\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    \/\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>off<\/jats:sub>\n                    ratio is 1.5\u2009\u00d7\u200910\n                    <jats:sup>7<\/jats:sup>\n                    and a sensitivity of 1.52\u2009\u00d7\u200910\n                    <jats:sup>9<\/jats:sup>\n                    . When the input voltage was increased to 0.5\u2009V, the\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    \/\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>off<\/jats:sub>\n                    ratio improved to 2.07\u2009\u00d7\u200910\n                    <jats:sup>7<\/jats:sup>\n                    and the sensitivity increased to 2.073\u2009\u00d7\u200910\n                    <jats:sup>9<\/jats:sup>\n                    . From these analyses, it is apparent that as the\n                    <jats:italic>K<\/jats:italic>\n                    \u2010values increase at a given input voltage, both the\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>on<\/jats:sub>\n                    \/\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>off<\/jats:sub>\n                    ratio and the sensitivity also increase significantly. Finally, in this paper, we also demonstrated the implementation and simulation of digital logic gates using the proposed NC\u2010MOSFET device, supporting circuit\u2010level design applications.\n                  <\/jats:p>","DOI":"10.1049\/cds2\/5585625","type":"journal-article","created":{"date-parts":[[2025,3,18]],"date-time":"2025-03-18T06:50:29Z","timestamp":1742280629000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Analyzing Fully Depleted SOI NC\u2010MOSFET for Enhanced Bio\u2010Sensor and Digital Circuit Applications"],"prefix":"10.1049","volume":"2025","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5578-3909","authenticated-orcid":false,"given":"Vydha Pradeep","family":"Kumar","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8835-3908","authenticated-orcid":false,"given":"Deepak Kumar","family":"Panda","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7924-8575","authenticated-orcid":false,"given":"Aruru Sai","family":"Kumar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8434-3673","authenticated-orcid":false,"given":"B. Naresh Kumar","family":"Reddy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-4411-5691","authenticated-orcid":false,"given":"Ch. Rama Prakasha","family":"Reddy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"265","published-online":{"date-parts":[[2025,3,18]]},"reference":[{"key":"e_1_2_13_1_2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2891540"},{"key":"e_1_2_13_2_2","unstructured":"ApplebyD. J. R. PononN. K. andKwaK. S. K. et al.2014 at Room Temperature. Pages 1-5."},{"key":"e_1_2_13_3_2","doi-asserted-by":"crossref","unstructured":"BacharachJ. UllahM. S. andFouadE. 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