{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T14:28:35Z","timestamp":1791037715251,"version":"4.1.0"},"reference-count":10,"publisher":"AIP Publishing","issue":"10","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[1996,3,4]]},"abstract":"<jats:p>A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (\u224a5nm in size) is described. The devices utilize direct tunneling and storage of electrons in the nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored electrons. Coulomb blockade effects may be important in these structures but are not necessary for their operation. The threshold shifts of 0.2\u20130.4 V with read and write times less than 100\u2019s of a nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention times are measured in days and weeks, and the structures have been operated in an excess of 109 cycles without degradation in performance. This nanomemory exhibits characteristics necessary for high density and low power.<\/jats:p>","DOI":"10.1063\/1.116085","type":"journal-article","created":{"date-parts":[[2002,7,26]],"date-time":"2002-07-26T12:33:37Z","timestamp":1027686817000},"page":"1377-1379","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":1492,"title":["A silicon nanocrystals based memory"],"prefix":"10.1063","volume":"68","author":[{"given":"Sandip","family":"Tiwari","sequence":"first","affiliation":[{"name":"IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Farhan","family":"Rana","sequence":"additional","affiliation":[{"name":"IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hussein","family":"Hanafi","sequence":"additional","affiliation":[{"name":"IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Allan","family":"Hartstein","sequence":"additional","affiliation":[{"name":"IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Emmanuel F.","family":"Crabb\u00e9","sequence":"additional","affiliation":[{"name":"IBM Research Division, Thomas J. 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Electron Devices","volume":"ED-33","year":"1986"}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/68\/10\/1377\/18517516\/1377_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/68\/10\/1377\/18517516\/1377_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,2,3]],"date-time":"2024-02-03T10:27:38Z","timestamp":1706956058000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/68\/10\/1377\/532777\/A-silicon-nanocrystals-based-memory"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1996,3,4]]},"references-count":10,"journal-issue":{"issue":"10","published-print":{"date-parts":[[1996,3,4]]}},"URL":"https:\/\/doi.org\/10.1063\/1.116085","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"value":"0003-6951","type":"print"},{"value":"1077-3118","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[1996,3,4]]},"published":{"date-parts":[[1996,3,4]]}}}