{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T11:02:03Z","timestamp":1753873323462,"version":"3.41.2"},"reference-count":7,"publisher":"AIP Publishing","issue":"2","funder":[{"DOI":"10.13039\/501100002261","name":"RFBR","doi-asserted-by":"publisher","award":["12-08-00183"],"award-info":[{"award-number":["12-08-00183"]}],"id":[{"id":"10.13039\/501100002261","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2014,2,1]]},"abstract":"<jats:p>Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus\u2014red phosphorus. At vacuum heating temperatures ranging from 325\u2009\u00b0C, red phosphorus evaporates solely as P4 molecules (P4\/P2 \u223c 2 \u00d7 105, P4\/P \u223c 1021). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen \u2013 phosphine \u2013 is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700\u2009\u00b0C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.<\/jats:p>","DOI":"10.1063\/1.4826604","type":"journal-article","created":{"date-parts":[[2013,10,31]],"date-time":"2013-10-31T00:34:25Z","timestamp":1383179665000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":1,"title":["Gas feeding molecular phosphorous ion source for semiconductor implanters"],"prefix":"10.1063","volume":"85","author":[{"given":"V. I.","family":"Gushenets","sequence":"first","affiliation":[{"name":"Siberian Branch of Russian Academy of Sciences 1 High Current Electronics Institute, , Tomsk 634055, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E. M.","family":"Oks","sequence":"additional","affiliation":[{"name":"Siberian Branch of Russian Academy of Sciences 1 High Current Electronics Institute, , Tomsk 634055, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A. S.","family":"Bugaev","sequence":"additional","affiliation":[{"name":"Siberian Branch of Russian Academy of Sciences 1 High Current Electronics Institute, , Tomsk 634055, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T. V.","family":"Kulevoy","sequence":"additional","affiliation":[{"name":"Institute for Theoretical and Experimental Physics 2 , Moscow 117218, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Hershcovitch","sequence":"additional","affiliation":[{"name":"Brookhaven National Laboratory 3 , Upton, New York 11973, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"317","published-online":{"date-parts":[[2013,10,30]]},"reference":[{"key":"2023080908560847000_c1","doi-asserted-by":"publisher","first-page":"159","DOI":"10.1063\/1.2401484","volume":"866","year":"2006","journal-title":"AIP Conf. Proc."},{"key":"2023080908560847000_c2","doi-asserted-by":"publisher","first-page":"02B311","DOI":"10.1063\/1.3672112","volume":"83","year":"2012","journal-title":"Rev. Sci. Instrum."},{"first-page":"97","volume-title":"Proceedings of the 4th International Workshop on Plasma Emission Electronics","year":"2012","key":"2023080908560847000_c3"},{"key":"2023080908560847000_c4","doi-asserted-by":"publisher","first-page":"8025","DOI":"10.1063\/1.347447","volume":"69","year":"1991","journal-title":"J. Appl. Phys."},{"key":"2023080908560847000_c5","doi-asserted-by":"publisher","first-page":"445","DOI":"10.1016\/0022-0248(86)90145-4","volume":"78","year":"1986","journal-title":"J. Cryst. Growth"},{"key":"2023080908560847000_c6","doi-asserted-by":"publisher","first-page":"701","DOI":"10.1063\/1.92484","volume":"38","year":"1981","journal-title":"Appl. Phys. Lett."},{"key":"2023080908560847000_c7","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1116\/1.572309","volume":"1","year":"1983","journal-title":"J. Vac. Sci. Technol. A"}],"container-title":["Review of Scientific Instruments"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/rsi\/article-pdf\/doi\/10.1063\/1.4826604\/15821016\/02c304_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/rsi\/article-pdf\/doi\/10.1063\/1.4826604\/15821016\/02c304_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,9]],"date-time":"2023-08-09T08:56:16Z","timestamp":1691571376000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/rsi\/article\/85\/2\/02C304\/1071446\/Gas-feeding-molecular-phosphorous-ion-source-for"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,10,30]]},"references-count":7,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2014,2,1]]}},"URL":"https:\/\/doi.org\/10.1063\/1.4826604","relation":{},"ISSN":["0034-6748","1089-7623"],"issn-type":[{"type":"print","value":"0034-6748"},{"type":"electronic","value":"1089-7623"}],"subject":[],"published-other":{"date-parts":[[2014,2]]},"published":{"date-parts":[[2013,10,30]]},"article-number":"02C304"}}