{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T13:34:30Z","timestamp":1789997670837,"version":"4.0.1"},"reference-count":24,"publisher":"AIP Publishing","issue":"4","license":[{"start":{"date-parts":[[2015,4,3]],"date-time":"2015-04-03T00:00:00Z","timestamp":1428019200000},"content-version":"vor","delay-in-days":2,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"},{"start":{"date-parts":[[2015,4,3]],"date-time":"2015-04-03T00:00:00Z","timestamp":1428019200000},"content-version":"tdm","delay-in-days":2,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["SFB 1083"],"award-info":[{"award-number":["SFB 1083"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100007001","name":"Small Business Innovative Research and Small Business Technology Transfer","doi-asserted-by":"publisher","award":["FA9550-13-C-0009"],"award-info":[{"award-number":["FA9550-13-C-0009"]}],"id":[{"id":"10.13039\/100007001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2015,4,1]]},"abstract":"<jats:p>The design and experimental realization of a type-II \u201cW\u201d-multiple quantum well heterostructure for emission in the \u03bb &amp;gt; 1.2\u2009\u03bcm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory\u2013experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.<\/jats:p>","DOI":"10.1063\/1.4917180","type":"journal-article","created":{"date-parts":[[2015,4,3]],"date-time":"2015-04-03T19:57:10Z","timestamp":1428091030000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":31,"title":["Novel type-II material system for laser applications in the near-infrared regime"],"prefix":"10.1063","volume":"5","author":[{"given":"C.","family":"Berger","sequence":"first","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.","family":"M\u00f6ller","sequence":"additional","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"P.","family":"Hens","sequence":"additional","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.","family":"Fuchs","sequence":"additional","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"W.","family":"Stolz","sequence":"additional","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S. W.","family":"Koch","sequence":"additional","affiliation":[{"name":"Philipps-Universit\u00e4t Marburg 1 Department of Physics and Material Sciences Center, , Renthof 5, 35032 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"A.","family":"Ruiz Perez","sequence":"additional","affiliation":[{"name":"NAsPIII\/V GmbH 2 , Am Knechtacker 19, 35041 Marburg, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J.","family":"Hader","sequence":"additional","affiliation":[{"name":"Nonlinear Control Strategies Inc 3 , 3542 N. Geronimo Ave., Tucson, AZ 85705, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J. V.","family":"Moloney","sequence":"additional","affiliation":[{"name":"Nonlinear Control Strategies Inc 3 , 3542 N. Geronimo Ave., Tucson, AZ 85705, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"317","published-online":{"date-parts":[[2015,4,3]]},"reference":[{"key":"2023071603110577100_c1","doi-asserted-by":"publisher","first-page":"287","DOI":"10.1038\/nphoton.2010.107","article-title":"The semiconductor laser: Enabling optical communication","volume":"4","year":"2010","journal-title":"Nature Photon."},{"key":"2023071603110577100_c2","volume-title":"Fiber-Optic Communication Systems","year":"2010","edition":"4th ed."},{"key":"2023071603110577100_c3","doi-asserted-by":"publisher","first-page":"1063","DOI":"10.1109\/68.605500","article-title":"High-power (&gt;0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM\/sub 00\/ beams","volume":"9","year":"1997","journal-title":"IEEE Photon. Technol. Lett."},{"key":"2023071603110577100_c4","doi-asserted-by":"publisher","first-page":"R75","DOI":"10.1088\/0022-3727\/37\/9\/R01","article-title":"Vertical-external-cavity semiconductor lasers","volume":"37","year":"2004","journal-title":"J. Phys. D: Appl. Phys."},{"key":"2023071603110577100_c5","doi-asserted-by":"publisher","first-page":"67","DOI":"10.1016\/j.physrep.2006.03.004","article-title":"Passively modelocked surface-emitting semiconductor lasers","volume":"429","year":"2006","journal-title":"Phys. Rep."},{"key":"2023071603110577100_c6","first-page":"301","article-title":"Semiconductor optoelectronic devices","volume-title":"High Pressure in Semiconductor Physics II","year":"1998"},{"key":"2023071603110577100_c7","doi-asserted-by":"publisher","first-page":"1826","DOI":"10.1063\/1.1664033","article-title":"Theoretical study of Auger recombination in a GaInNAs 1.3 \u03bcm quantum well laser structure","volume":"84","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023071603110577100_c8","doi-asserted-by":"publisher","first-page":"2639","DOI":"10.1063\/1.114321","article-title":"Realization and modeling of a pseudomorphic (GaAs1-xSbx\u2013InyGa1-yAs)\/GaAs bilayer-quantum well","volume":"67","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"2023071603110577100_c9","doi-asserted-by":"publisher","first-page":"2681","DOI":"10.1063\/1.114291","article-title":"Mechanism of suppression of Auger recombination processes in type-II heterostructures","volume":"67","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"2023071603110577100_c10","doi-asserted-by":"publisher","first-page":"757","DOI":"10.1063\/1.115216","article-title":"Type-II quantum-well lasers for the mid-wavelength infrared","volume":"67","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"2023071603110577100_c11","doi-asserted-by":"publisher","first-page":"L1040","DOI":"10.1143\/JJAP.41.L1040","article-title":"Low-lattice-strain long-wavelength GaAsSb\/GaInAs type-II quantum wells grown on GaAs substrates","volume":"41","year":"2002","journal-title":"Jpn. J. Appl. Phys."},{"key":"2023071603110577100_c12","first-page":"189","article-title":"Antimonide type-II \u201cW\u201d lasers","volume-title":"Mid-infrared Semiconductor Optoelectronics","year":"2006"},{"key":"2023071603110577100_c13","doi-asserted-by":"publisher","first-page":"155","DOI":"10.1016\/j.pquantelec.2006.12.002","article-title":"Many-body correlations and excitonic effects in semiconductor spectroscopy","volume":"30","year":"2006","journal-title":"Prog. Quantum Electron."},{"key":"2023071603110577100_c14","volume-title":"Semiconductor Quantum Optics","year":"2012"},{"key":"2023071603110577100_c15","volume-title":"Quantum Theory of the Optical and Electronic Properties of Semiconductors","year":"2009","edition":"5th ed."},{"key":"2023071603110577100_c16"},{"key":"2023071603110577100_c17","doi-asserted-by":"publisher","first-page":"4101","DOI":"10.1063\/1.361773","article-title":"Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffraction","volume":"79","year":"1996","journal-title":"J. Appl. Phys."},{"key":"2023071603110577100_c18","doi-asserted-by":"publisher","first-page":"6960","DOI":"10.1103\/PhysRevB.55.6960","article-title":"k\u22c5p theory of the Franz-Keldysh effect","volume":"55","year":"1997","journal-title":"Phys. Rev. B"},{"key":"2023071603110577100_c19","volume-title":"Semiconductor-Laser Fundamentals: Physics of the Gain Materials","year":"1999"},{"key":"2023071603110577100_c20","doi-asserted-by":"publisher","first-page":"9649","DOI":"10.1103\/PhysRevB.43.9649","article-title":"Efficient band-structure calculations of strained quantum wells","volume":"43","year":"1991","journal-title":"Phys. Rev. B"},{"key":"2023071603110577100_c21","doi-asserted-by":"publisher","first-page":"513","DOI":"10.1016\/S0038-1101(02)00405-7","article-title":"Microscopic theory of gain and spontaneous emission in GaInNAs laser material","volume":"47","year":"2003","journal-title":"Solid-State Electron."},{"key":"2023071603110577100_c22","doi-asserted-by":"publisher","first-page":"6143","DOI":"10.1063\/1.342118","article-title":"Model of the field-effect quantum-well laser with free-carrier screening and valence band mixing","volume":"64","year":"1988","journal-title":"J. Appl. Phys."},{"key":"2023071603110577100_c23","doi-asserted-by":"publisher","first-page":"688","DOI":"10.1109\/JSTQE.2003.818342","article-title":"Microscopic modeling of gain and luminescence in semiconductors","volume":"9","year":"2003","journal-title":"IEEE J. Select. Topics Quantum Electron."},{"key":"2023071603110577100_c24","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1002\/lpor.200610003","article-title":"Quantum design of semiconductor active materials: laser and amplifier applications","volume":"1","year":"2007","journal-title":"Laser Photon. Rev."}],"container-title":["AIP Advances"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/adv\/article-pdf\/doi\/10.1063\/1.4917180\/12821001\/047105_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/scitation.aip.org\/deliver\/fulltext\/aip\/journal\/adva\/5\/4\/1.4917180.pdf?itemId=\/content\/aip\/journal\/adva\/5\/4\/10.1063\/1.4917180&mimeType=pdf&containerItemId=content\/aip\/journal\/adva","content-type":"application\/pdf","content-version":"vor","intended-application":"unspecified"},{"URL":"https:\/\/pubs.aip.org\/aip\/adv\/article-pdf\/doi\/10.1063\/1.4917180\/12821001\/047105_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/adv\/article-pdf\/doi\/10.1063\/1.4917180\/12821001\/047105_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,3]],"date-time":"2025-06-03T18:21:25Z","timestamp":1748974885000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/adv\/article\/5\/4\/047105\/595790\/Novel-type-II-material-system-for-laser"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4,1]]},"references-count":24,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2015,4,1]]}},"URL":"https:\/\/doi.org\/10.1063\/1.4917180","relation":{},"ISSN":["2158-3226"],"issn-type":[{"value":"2158-3226","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2015,4]]},"published":{"date-parts":[[2015,4,1]]},"article-number":"047105"}}