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An etch rate of 0.6 \u03bcm\/min and an etch selectivity to nickel of 100 were achieved with SF6 plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.<\/jats:p>","DOI":"10.1063\/1.4917193","type":"journal-article","created":{"date-parts":[[2015,4,9]],"date-time":"2015-04-09T17:00:40Z","timestamp":1428598840000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":15,"title":["Thermal reactive ion etching technique involving use of self-heated cathode"],"prefix":"10.1063","volume":"86","author":[{"given":"S.","family":"Yamada","sequence":"first","affiliation":[{"name":"Niigata University Graduate School of Science and Technology, , Niigata 950-2181, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Y.","family":"Minami","sequence":"additional","affiliation":[{"name":"Niigata University Graduate School of Science and Technology, , Niigata 950-2181, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M.","family":"Sohgawa","sequence":"additional","affiliation":[{"name":"Niigata University Graduate School of Science and Technology, , Niigata 950-2181, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"T.","family":"Abe","sequence":"additional","affiliation":[{"name":"Niigata University Graduate School of Science and Technology, , Niigata 950-2181, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"317","published-online":{"date-parts":[[2015,4,9]]},"reference":[{"key":"2023070416251806500_c1","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1038\/nmat1058","volume":"3","year":"2004","journal-title":"Nat. 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