{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T00:22:11Z","timestamp":1790209331017,"version":"4.1.0"},"reference-count":31,"publisher":"AIP Publishing","issue":"5","funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["CHE-1306131"],"award-info":[{"award-number":["CHE-1306131"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2017,2,7]]},"abstract":"<jats:p>The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibrational spectroscopy measurements on Al2O3 ALD-coated SiO2 nanoparticles. The FTIR spectra could observe an absorbance loss of the Al-O stretching vibrations during Al2O3 ALE or an absorbance gain of the Al-F stretching vibrations during AlF3 ALD. The transition from AlF3 ALD to Al2O3 ALE occurred versus reaction temperature and was also influenced by the N2 or He background gas pressure. Higher temperatures and lower background gas pressures led to Al2O3 ALE. Lower temperatures and higher background gas pressures led to AlF3 ALD. The FTIR measurements also monitored AlCH3* and HF* species on the surface after the TMA and HF reactant exposures. The loss of AlCH3* and HF* species at higher temperatures is believed to play a vital role in the transition between AlF3 ALD at lower temperatures and Al2O3 ALE at higher temperatures. The change between AlF3 ALD and Al2O3 ALE was defined by the transition temperature. Higher transition temperatures were observed using larger N2 or He background gas pressures. This correlation was associated with variations in the N2 or He gas thermal conductivity versus pressure. The fluorination reaction during Al2O3 ALE is very exothermic and leads to temperature rises in the SiO2 nanoparticles. These temperature transients influence the Al2O3 etching. The higher N2 and He gas thermal conductivities are able to cool the SiO2 nanoparticles more efficiently and minimize the size of the temperature rises. The competition between Al2O3 ALE and AlF3 ALD using TMA and HF illustrates the interplay between etching and growth and the importance of substrate temperature. Background gas pressure also plays a key role in determining the transition temperature for nanoparticle substrates.<\/jats:p>","DOI":"10.1063\/1.4973310","type":"journal-article","created":{"date-parts":[[2017,1,4]],"date-time":"2017-01-04T18:18:30Z","timestamp":1483553910000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":57,"title":["Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride"],"prefix":"10.1063","volume":"146","author":[{"given":"Jaime W.","family":"DuMont","sequence":"first","affiliation":[{"name":"University of Colorado 1 Department of Chemistry and Biochemistry, , Boulder, Colorado 80309-0215, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0253-9184","authenticated-orcid":false,"given":"Steven M.","family":"George","sequence":"additional","affiliation":[{"name":"University of Colorado 1 Department of Chemistry and Biochemistry, , Boulder, Colorado 80309-0215, USA"},{"name":"University of Colorado 2 Department of Mechanical Engineering, , Boulder, Colorado 80309-0215, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"317","published-online":{"date-parts":[[2017,1,4]]},"reference":[{"key":"2023061922372828300_c1","doi-asserted-by":"publisher","first-page":"111","DOI":"10.1021\/cr900056b","article-title":"Atomic layer deposition: An overview","volume":"110","year":"2010","journal-title":"Chem. Rev."},{"key":"2023061922372828300_c2","doi-asserted-by":"publisher","first-page":"020802","DOI":"10.1116\/1.4913379","article-title":"Overview of atomic layer etching in the semiconductor industry","volume":"33","year":"2015","journal-title":"J. Vac. Sci. Technol., A"},{"key":"2023061922372828300_c3","doi-asserted-by":"publisher","first-page":"N5005","DOI":"10.1149\/2.0021506jss","article-title":"Atomic layer etching: An industry perspective","volume":"4","year":"2015","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"2023061922372828300_c4","doi-asserted-by":"publisher","first-page":"021301","DOI":"10.1063\/1.4757907","article-title":"Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends","volume":"113","year":"2013","journal-title":"J. Appl. Phys."},{"key":"2023061922372828300_c5","doi-asserted-by":"publisher","first-page":"3648","DOI":"10.1021\/acs.chemmater.5b00300","article-title":"Mechanism of thermal Al2O3 atomic layer etching using sequential reactions with Sn(acac)2 and HF","volume":"27","year":"2015","journal-title":"Chem. Mater."},{"key":"2023061922372828300_c6","doi-asserted-by":"publisher","first-page":"25385","DOI":"10.1021\/acs.jpcc.5b07236","article-title":"Atomic layer etching of AlF3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride","volume":"119","year":"2015","journal-title":"J. Phys. Chem. C"},{"key":"2023061922372828300_c7","doi-asserted-by":"publisher","first-page":"N5013","DOI":"10.1149\/2.0041506jss","article-title":"Atomic layer etching of HfO2 using sequential, self-limiting thermal reactions with Sn(acac)2 and HF","volume":"4","year":"2015","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"2023061922372828300_c8","doi-asserted-by":"publisher","first-page":"2994","DOI":"10.1021\/acs.chemmater.6b00111","article-title":"Trimethylaluminum as the metal precursor for the atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions","volume":"28","year":"2016","journal-title":"Chem. Mater."},{"key":"2023061922372828300_c9","doi-asserted-by":"publisher","first-page":"2061","DOI":"10.1021\/nn507277f","article-title":"Atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride","volume":"9","year":"2015","journal-title":"ACS Nano"},{"key":"2023061922372828300_c10","doi-asserted-by":"publisher","first-page":"050603","DOI":"10.1116\/1.4959779","article-title":"Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting HF and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas","volume":"34","year":"2016","journal-title":"J. Vac. Sci. Technol., A"},{"key":"2023061922372828300_c11","doi-asserted-by":"publisher","first-page":"4889","DOI":"10.1021\/acsnano.6b02991","article-title":"Prospects for thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions","volume":"10","year":"2016","journal-title":"ACS Nano"},{"key":"2023061922372828300_c12","doi-asserted-by":"publisher","first-page":"2022","DOI":"10.1021\/acs.chemmater.5b04360","article-title":"Atomic layer deposition of metal fluorides using HF\u2013pyridine as the fluorine precursor","volume":"28","year":"2016","journal-title":"Chem. Mater."},{"key":"2023061922372828300_c13","doi-asserted-by":"publisher","first-page":"121301","DOI":"10.1063\/1.1940727","article-title":"Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum\/water process","volume":"97","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023061922372828300_c14","doi-asserted-by":"publisher","first-page":"14185","DOI":"10.1021\/acs.jpcc.5b02625","article-title":"Atomic layer deposition of AlF3 using trimethylaluminum and hydrogen fluoride","volume":"119","year":"2015","journal-title":"J. Phys. Chem. C"},{"key":"2023061922372828300_c15","doi-asserted-by":"publisher","first-page":"14603","DOI":"10.1021\/jp512074n","article-title":"Pyrolysis of alucone molecular layer deposition films studied using in situ transmission Fourier transform infrared spectroscopy","volume":"119","year":"2015","journal-title":"J. Phys. Chem. C"},{"key":"2023061922372828300_c16","doi-asserted-by":"publisher","first-page":"1676","DOI":"10.1021\/la00042a031","article-title":"Transmission infrared-spectroscopy of high area solid surfaces\u2014A useful method for sample preparation","volume":"8","year":"1992","journal-title":"Langmuir"},{"key":"2023061922372828300_c17","doi-asserted-by":"publisher","first-page":"95","DOI":"10.1016\/S0040-6090(00)00973-1","article-title":"Atomic layer deposition of ultrathin and conformal Al2O3 films on BN particles","volume":"371","year":"2000","journal-title":"Thin Solid Films"},{"key":"2023061922372828300_c18","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1016\/0040-6090(70)90052-0","article-title":"Vacuum evaporated films of aluminum fluoride","volume":"5","year":"1970","journal-title":"Thin Solid Films"},{"key":"2023061922372828300_c19","doi-asserted-by":"publisher","first-page":"5813","DOI":"10.1021\/jp072388r","article-title":"Vibrational analysis study of aluminum trifluoride phases","volume":"111","year":"2007","journal-title":"J. Phys. Chem. A"},{"key":"2023061922372828300_c20","doi-asserted-by":"publisher","first-page":"184501","DOI":"10.1063\/1.2090259","article-title":"Why is hydrofluoric acid a weak acid?","volume":"123","year":"2005","journal-title":"J. Chem. Phys."},{"key":"2023061922372828300_c21","doi-asserted-by":"publisher","first-page":"230","DOI":"10.1016\/0039-6028(95)90033-0","article-title":"Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence","volume":"322","year":"1995","journal-title":"Surf. Sci."},{"key":"2023061922372828300_c22","doi-asserted-by":"publisher","first-page":"1511","DOI":"10.1139\/v63-205","article-title":"Infrared spectra of trimethyl aluminum, dimethyl aluminum chloride, methyl aluminum dichloride, methyl titanium trichloride, dimethyl titanium dichloride, and some deuterium derivatives","volume":"41","year":"1963","journal-title":"Can. J. Chem."},{"key":"2023061922372828300_c23","doi-asserted-by":"publisher","first-page":"147","DOI":"10.1524\/zpch.1958.18.3_4.147","article-title":"An I. R. spectroscopic study of the components of the Ziegler catalyst system TiCl4 + Al(CH3)2Cl","volume":"18","year":"1958","journal-title":"Z. Phys. Chem."},{"key":"2023061922372828300_c24","doi-asserted-by":"publisher","first-page":"9","DOI":"10.1016\/0022-328X(68)80016-6","article-title":"Vibrational spectra of dimethyl and diethyl aluminum fluoride","volume":"11","year":"1968","journal-title":"J. Organomet. Chem."},{"key":"2023061922372828300_c25","doi-asserted-by":"publisher","first-page":"035003","DOI":"10.1088\/1468-6996\/13\/3\/035003","article-title":"Low-cost and fast synthesis of nanoporous silica cryogels for thermal insulation applications","volume":"13","year":"2012","journal-title":"Sci. Technol. Adv. Mater."},{"key":"2023061922372828300_c26","doi-asserted-by":"publisher","first-page":"084313","DOI":"10.1063\/1.3631342","article-title":"Optical method for measuring thermal accommodation coefficients using a whispering-gallery microresonator","volume":"135","year":"2011","journal-title":"J. Chem. Phys."},{"key":"2023061922372828300_c27","volume-title":"Physical Chemistry","year":"1990"},{"key":"2023061922372828300_c28","volume-title":"Vacuum Technology","year":"1990"},{"key":"2023061922372828300_c29","doi-asserted-by":"publisher","first-page":"2568","DOI":"10.1116\/1.1286024","article-title":"Recommended practice for calibrating vacuum gauges of the thermal conductivity type","volume":"18","year":"2000","journal-title":"J. Vac. Sci. Technol., A"},{"key":"2023061922372828300_c30"},{"key":"2023061922372828300_c31","doi-asserted-by":"publisher","first-page":"12766","DOI":"10.1364\/oe.19.012766","article-title":"Active-mirror-laser-amplifier thermal management with tunable helium pressure at cryogenic temperatures","volume":"19","year":"2011","journal-title":"Opt. Express"}],"container-title":["The Journal of Chemical Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jcp\/article-pdf\/doi\/10.1063\/1.4973310\/13397401\/052819_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"http:\/\/aip.scitation.org\/doi\/am-pdf\/10.1063\/1.4973310","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jcp\/article-pdf\/doi\/10.1063\/1.4973310\/13397401\/052819_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,19]],"date-time":"2023-06-19T22:37:37Z","timestamp":1687214257000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jcp\/article\/146\/5\/052819\/75040\/Competition-between-Al2O3-atomic-layer-etching-and"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,1,4]]},"references-count":31,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2017,2,7]]}},"URL":"https:\/\/doi.org\/10.1063\/1.4973310","relation":{},"ISSN":["0021-9606","1089-7690"],"issn-type":[{"value":"0021-9606","type":"print"},{"value":"1089-7690","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2017,2,7]]},"published":{"date-parts":[[2017,1,4]]},"article-number":"052819"}}