{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,20]],"date-time":"2026-10-20T02:54:10Z","timestamp":1792464850343,"version":"4.5.0"},"reference-count":66,"publisher":"AIP Publishing","issue":"13","funder":[{"DOI":"10.13039\/501100010418","name":"Institute for Information and Communications Technology Promotion","doi-asserted-by":"publisher","award":["IITP-2024-RS-2024-00437186"],"award-info":[{"award-number":["IITP-2024-RS-2024-00437186"]}],"id":[{"id":"10.13039\/501100010418","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2024,10,7]]},"abstract":"<jats:p>This study systematically investigates analog switching and neuromorphic characteristics in a ZnO-based memristor by varying the anodic top electrode (TE) materials [indium tin oxide (ITO), Ti, and Ta]. Compared with the TE materials (Ti and Ta), memristive devices with TEs made of ITO exhibit dual volatile and nonvolatile switching behavior and multistate switching characteristics assessed based on reset-stop voltage and current compliance (ICC) responses. The polycrystalline structure of the ZnO functional layer sandwiched between ITO electrodes was confirmed by high-resolution transmission electron microscopy analysis. The current transport mechanism in the ZnO-based memristor was dominated by Schottky emission, with the Schottky barrier height modulated from 0.26 to 0.4\u00a0V by varying the reset-stop voltage under different ICC conditions. The long-term potentiation and long-term depression synaptic characteristics were successfully mimicked by modulating the pulse amplitudes. Furthermore, a 90.84% accuracy was achieved using a convolutional neural network architecture for Modified National Institute of Standards and Technology pattern categorization, as demonstrated by the confusion matrix. The results demonstrated that the ITO\/ZnO\/ITO\/Si memristor device holds promise for high-performance electronic applications and effective ITO electrode modeling.<\/jats:p>","DOI":"10.1063\/5.0233031","type":"journal-article","created":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T10:41:19Z","timestamp":1727779279000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":17,"title":["Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition"],"prefix":"10.1063","volume":"161","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8880-8164","authenticated-orcid":false,"given":"Muhammad","family":"Ismail","sequence":"first","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University 1 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Maria","family":"Rasheed","sequence":"additional","affiliation":[{"name":"Department of Advanced Battery Convergence Engineering, Dongguk University 2 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-3646-6002","authenticated-orcid":false,"given":"Yongjin","family":"Park","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University 1 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sohyeon","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Advanced Battery Convergence Engineering, Dongguk University 2 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5443-6561","authenticated-orcid":false,"given":"Chandreswar","family":"Mahata","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University 1 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9669-7310","authenticated-orcid":false,"given":"Wonbo","family":"Shim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Information Engineering, Seoul National University of Science and Technology 3 , Seoul 01811,","place":["South Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9873-2474","authenticated-orcid":false,"given":"Sungjun","family":"Kim","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University 1 , Seoul 04620,","place":["Republic of Korea"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"317","published-online":{"date-parts":[[2024,10,1]]},"reference":[{"key":"2024100110411421400_c1","doi-asserted-by":"publisher","first-page":"833","DOI":"10.1038\/nmat2023","article-title":"Nanoionics-based resistive switching memories","volume":"6","year":"2007","journal-title":"Nat. Mater."},{"key":"2024100110411421400_c2","doi-asserted-by":"publisher","first-page":"21","DOI":"10.1016\/j.physb.2017.05.040","article-title":"Effects of Gibbs free energy of interfacial metal oxide on resistive switching characteristics of solution-processed HfOx films","volume":"519","year":"2017","journal-title":"Physica B"},{"key":"2024100110411421400_c3","doi-asserted-by":"publisher","first-page":"147190","DOI":"10.1016\/j.apsusc.2020.147190","article-title":"Electric-field-induced healing of inanimate topographies: Multistate resistive switching and nano-sized artificial synapse functionality","volume":"530","year":"2020","journal-title":"Appl. Surf. Sci."},{"key":"2024100110411421400_c4","doi-asserted-by":"publisher","first-page":"39","DOI":"10.3390\/nano13010039","article-title":"Enhancement of resistive switching performance in hafnium oxide (HfO2) devices via sol-gel method stacking tri-layer HfO2\/Al-ZnO\/HfO2 Structures","volume":"13","year":"2022","journal-title":"Nanomaterials"},{"key":"2024100110411421400_c5","doi-asserted-by":"publisher","first-page":"981","DOI":"10.1016\/j.jmrt.2022.09.095","article-title":"Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory","volume":"21","year":"2022","journal-title":"J.\u00a0Mater. Res. Technol."},{"key":"2024100110411421400_c6","doi-asserted-by":"publisher","first-page":"103325","DOI":"10.1016\/j.rinp.2020.103325","article-title":"Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application","volume":"18","year":"2020","journal-title":"Res. Phys."},{"key":"2024100110411421400_c7","doi-asserted-by":"publisher","first-page":"056401","DOI":"10.1088\/2053-1591\/aa6dec","article-title":"Impact of work function on the resistive switching characteristics of M\/ZnO\/CeO2\/Pt devices","volume":"4","year":"2017","journal-title":"Mater. Res. Express"},{"key":"2024100110411421400_c8","doi-asserted-by":"publisher","first-page":"109272","DOI":"10.1016\/j.nanoen.2024.109272","article-title":"Realization of future neuro-biological architecture in power efficient memristors of Fe3O4\/WS2 hybrid nanocomposites","volume":"122","year":"2024","journal-title":"Nano Energy"},{"key":"2024100110411421400_c9","doi-asserted-by":"publisher","first-page":"103275","DOI":"10.1016\/j.rinp.2020.103275","article-title":"Resistive switching characteristics and mechanism of bilayer HfO2\/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory","volume":"18","year":"2020","journal-title":"Res. Phys."},{"key":"2024100110411421400_c10","doi-asserted-by":"publisher","first-page":"98","DOI":"10.1016\/j.jmst.2021.08.012","article-title":"Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage","volume":"106","year":"2022","journal-title":"J.\u00a0Mater. Sci. Technol."},{"key":"2024100110411421400_c11","doi-asserted-by":"publisher","first-page":"042102","DOI":"10.1063\/1.5062597","article-title":"Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices","volume":"114","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"2024100110411421400_c12","doi-asserted-by":"publisher","first-page":"87","DOI":"10.1039\/c8fd00106e","article-title":"Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices","volume":"213","year":"2019","journal-title":"Faraday Discuss."},{"key":"2024100110411421400_c13","doi-asserted-by":"publisher","first-page":"2310193","DOI":"10.1002\/adfm.202310193","article-title":"Synaptic characteristics and vector-matrix multiplication operation in highly uniform and cost-effective four-layer vertical RRAM array","volume":"34","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"2024100110411421400_c14","doi-asserted-by":"publisher","first-page":"2300290","DOI":"10.1002\/admi.202300290","article-title":"Demonstration of synaptic characteristics in VRRAM with TiN nanocrystals for neuromorphic system","volume":"10","year":"2023","journal-title":"Adv. Mater. Interfaces"},{"key":"2024100110411421400_c15","doi-asserted-by":"publisher","first-page":"106315","DOI":"10.1016\/j.isci.2023.106315","article-title":"Short-term synaptic plasticity in emerging devices for neuromorphic computing","volume":"26","year":"2023","journal-title":"iScience"},{"key":"2024100110411421400_c16","doi-asserted-by":"publisher","first-page":"107886","DOI":"10.1016\/j.nanoen.2022.107886","article-title":"Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM","volume":"104","year":"2022","journal-title":"Nano Energy"},{"key":"2024100110411421400_c17","doi-asserted-by":"publisher","first-page":"19032","DOI":"10.1016\/j.ceramint.2023.03.030","article-title":"Exploring conductance modulation and implementation of convolutional neural network in Pt\/ZnO\/Al2O3\/TaN memristors for brain-inspired computing","volume":"49","year":"2023","journal-title":"Ceram. Int."},{"key":"2024100110411421400_c18","doi-asserted-by":"publisher","first-page":"110015","DOI":"10.1016\/j.nanoen.2024.110015","article-title":"Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition","volume":"129","year":"2024","journal-title":"Nano Energy"},{"key":"2024100110411421400_c19","doi-asserted-by":"publisher","first-page":"3080","DOI":"10.1021\/acsmaterialslett.3c00600","article-title":"Unveiling the potential of HfO2\/WS2 bilayer films: Robust analog switching and synaptic emulation for advanced memory and neuromorphic computing","volume":"5","year":"2023","journal-title":"ACS Mater. Lett."},{"key":"2024100110411421400_c20","doi-asserted-by":"publisher","first-page":"3514","DOI":"10.1021\/acsmaterialslett.4c00406","article-title":"Exploration of analog synaptic plasticity and convolutional neural network simulation in bilayer TiOxNy\/SnOx memristor for neuromorphic systems","volume":"6","year":"2024","journal-title":"ACS Mater. Lett."},{"key":"2024100110411421400_c21","doi-asserted-by":"publisher","first-page":"33","DOI":"10.1186\/s40580-023-00380-8","article-title":"Mimicking biological synapses with a-HfSiOx-based memristor: Implications for artificial intelligence and memory applications","volume":"10","year":"2023","journal-title":"Nano Convergence"},{"key":"2024100110411421400_c22","doi-asserted-by":"publisher","first-page":"148796","DOI":"10.1016\/j.apsusc.2020.148796","article-title":"Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering","volume":"544","year":"2021","journal-title":"Appl. Surf. Sci."},{"key":"2024100110411421400_c23","doi-asserted-by":"publisher","first-page":"184712","DOI":"10.1063\/5.0179314","article-title":"Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma","volume":"159","year":"2023","journal-title":"J.\u00a0Chem. Phys."},{"key":"2024100110411421400_c24","doi-asserted-by":"publisher","first-page":"163503","DOI":"10.1063\/5.0003696","article-title":"Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition","volume":"116","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"2024100110411421400_c25","doi-asserted-by":"publisher","first-page":"1288","DOI":"10.1021\/acsaelm.2c00023","article-title":"Neuromorphic synapses with high switching uniformity and multilevel memory storage enabled through a Hf-Al-O alloy for artificial intelligence","volume":"4","year":"2022","journal-title":"ACS Appl. Electron. Mater."},{"key":"2024100110411421400_c26","doi-asserted-by":"publisher","first-page":"254","DOI":"10.1016\/j.mattod.2015.11.009","article-title":"Resistance random access memory","volume":"19","year":"2016","journal-title":"Mater. Today"},{"key":"2024100110411421400_c27","doi-asserted-by":"publisher","first-page":"2632","DOI":"10.1002\/adma.200900375","article-title":"Redox-based resistive switching memories\u2014Nanoionic mechanisms, prospects, and challenges","volume":"21","year":"2009","journal-title":"Adv. Mater."},{"key":"2024100110411421400_c28","doi-asserted-by":"publisher","first-page":"725","DOI":"10.3390\/mi13050725","article-title":"Conductive bridge random access memory (CBRAM): Challenges and opportunities for memory and neuromorphic computing applications","volume":"13","year":"2022","journal-title":"Micromachines"},{"key":"2024100110411421400_c29","doi-asserted-by":"publisher","first-page":"254003","DOI":"10.1088\/0957-4484\/22\/25\/254003","article-title":"Electrochemical metallization memories\u2014Fundamentals, applications, prospects","volume":"22","year":"2011","journal-title":"Nanotechnology"},{"key":"2024100110411421400_c30","doi-asserted-by":"publisher","first-page":"33908","DOI":"10.1021\/acsami.0c07867","article-title":"Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering","volume":"12","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2024100110411421400_c31","doi-asserted-by":"publisher","first-page":"6663","DOI":"10.3390\/ma15196663","article-title":"Improved resistive switching with low-power synaptic behaviors of ZnO\/Al2O3 bilayer structure","volume":"15","year":"2022","journal-title":"Materials"},{"key":"2024100110411421400_c32","first-page":"001238","article-title":"An (ITO or AZO)\/ZnO\/Cu(In1\u2212xGax)Se2 superstrate thin film solar cell structure prepared by spray pyrolysis","year":"2011"},{"key":"2024100110411421400_c33","doi-asserted-by":"publisher","first-page":"146723","DOI":"10.1016\/j.apsusc.2020.146723","article-title":"Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM","volume":"526","year":"2020","journal-title":"Appl. Surf. Sci."},{"key":"2024100110411421400_c34","doi-asserted-by":"publisher","first-page":"17154","DOI":"10.1039\/d2tc02242g","article-title":"Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films","volume":"10","year":"2022","journal-title":"J.\u00a0Mater. Chem. C"},{"key":"2024100110411421400_c35","doi-asserted-by":"publisher","first-page":"29451","DOI":"10.1021\/acsami.0c05038","article-title":"TEM nanostructural investigation of Ag-conductive filaments in polycrystalline ZnO-based resistive switching devices","volume":"12","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2024100110411421400_c36","doi-asserted-by":"publisher","first-page":"105388","DOI":"10.1016\/j.mejo.2022.105388","article-title":"Top electrode dependent resistive switching in M\/ZnO\/ITO memristors, M = Al, ITO, Cu, and Au","volume":"121","year":"2022","journal-title":"Microelectron. J."},{"key":"2024100110411421400_c37","doi-asserted-by":"publisher","first-page":"193502","DOI":"10.1063\/1.5098382","article-title":"Modulating metallic conductive filaments via bilayer oxides in resistive switching memory","volume":"114","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"2024100110411421400_c38","doi-asserted-by":"publisher","first-page":"325201","DOI":"10.1088\/1361-6528\/ab8b8e","article-title":"Eradicating negative-set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications","volume":"31","year":"2020","journal-title":"Nanotechnology"},{"key":"2024100110411421400_c39","doi-asserted-by":"publisher","first-page":"074006","DOI":"10.7567\/1882-0786\/ab2835","article-title":"Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin","volume":"12","year":"2019","journal-title":"Appl. Phys. Express"},{"key":"2024100110411421400_c40","doi-asserted-by":"publisher","first-page":"183","DOI":"10.1007\/s11706-012-0170-8","article-title":"Resistive switching effects in oxide sandwiched structures","volume":"6","year":"2012","journal-title":"Front. Mater. Sci."},{"key":"2024100110411421400_c41","doi-asserted-by":"publisher","first-page":"24838","DOI":"10.1016\/j.ceramint.2020.06.267","article-title":"The effect of electrodes on microstructures and switching behaviors of ZnO-based resistive memory","volume":"46","year":"2020","journal-title":"Ceram. Int."},{"key":"2024100110411421400_c42","doi-asserted-by":"publisher","first-page":"878","DOI":"10.1021\/acs.jpcc.8b09793","article-title":"Self-modulating interfacial cation migration induced threshold switching in bilayer oxide memristive device","volume":"123","year":"2019","journal-title":"J.\u00a0Phys. Chem. C"},{"key":"2024100110411421400_c43","doi-asserted-by":"publisher","first-page":"1259","DOI":"10.1038\/s41598-022-05150-w","article-title":"Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics","volume":"12","year":"2022","journal-title":"Sci. Rep."},{"key":"2024100110411421400_c44","doi-asserted-by":"publisher","first-page":"1343","DOI":"10.1021\/acsaelm.0c00130","article-title":"Compliance current-dependent dual-functional bipolar and threshold resistive switching in all-inorganic rubidium lead-bromide perovskite-based flexible device","volume":"2","year":"2020","journal-title":"ACS Appl. Electron. Mater."},{"key":"2024100110411421400_c45","doi-asserted-by":"publisher","first-page":"168539","DOI":"10.1016\/j.jallcom.2022.168539","article-title":"Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses","volume":"938","year":"2023","journal-title":"J.\u00a0Alloys Compd."},{"key":"2024100110411421400_c46","doi-asserted-by":"publisher","first-page":"203","DOI":"10.1016\/j.jmst.2021.03.079","article-title":"Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles","volume":"95","year":"2021","journal-title":"J.\u00a0Mater. Sci. Technol."},{"key":"2024100110411421400_c47","doi-asserted-by":"publisher","first-page":"170846","DOI":"10.1016\/j.jallcom.2023.170846","article-title":"Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation","volume":"960","year":"2023","journal-title":"J.\u00a0Alloys Compd."},{"key":"2024100110411421400_c48","doi-asserted-by":"publisher","first-page":"162141","DOI":"10.1016\/j.jallcom.2021.162141","article-title":"Forming-free Pt\/Al2O3\/HfO2\/HfAlOx\/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse","volume":"892","year":"2022","journal-title":"J.\u00a0Alloys Compd."},{"key":"2024100110411421400_c49","doi-asserted-by":"publisher","first-page":"130011","DOI":"10.1016\/j.matlet.2021.130011","article-title":"Gradual resistive switching and synaptic properties of ITO\/HfAlO\/ITO device embedded with Pt nanoparticles","volume":"298","year":"2021","journal-title":"Mater. Lett."},{"key":"2024100110411421400_c50","doi-asserted-by":"publisher","first-page":"147167","DOI":"10.1016\/j.apsusc.2020.147167","article-title":"Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices","volume":"529","year":"2020","journal-title":"Appl. Surf. Sci."},{"key":"2024100110411421400_c51","doi-asserted-by":"publisher","first-page":"30764","DOI":"10.1016\/j.ceramint.2021.07.257","article-title":"Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing","volume":"47","year":"2021","journal-title":"Ceram. Int."},{"key":"2024100110411421400_c52","doi-asserted-by":"publisher","first-page":"155256","DOI":"10.1016\/j.jallcom.2020.155256","article-title":"Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer","volume":"835","year":"2020","journal-title":"J.\u00a0Alloys Compd."},{"key":"2024100110411421400_c53","doi-asserted-by":"publisher","first-page":"158416","DOI":"10.1016\/j.jallcom.2020.158416","article-title":"Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses","volume":"862","year":"2021","journal-title":"J.\u00a0Alloys Compd."},{"key":"2024100110411421400_c54","doi-asserted-by":"publisher","first-page":"2300453","DOI":"10.1002\/pssa.202300453","article-title":"Investigating the effects of sulfur treatment on material characteristics and resistance switching device applications with supercritical fluid technique","volume":"220","year":"2023","journal-title":"Phys. Status Solidi A"},{"key":"2024100110411421400_c55","doi-asserted-by":"publisher","first-page":"6127","DOI":"10.1021\/acsami.5b11682","article-title":"Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant","volume":"8","year":"2016","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2024100110411421400_c56","doi-asserted-by":"publisher","first-page":"39539","DOI":"10.1038\/srep39539","article-title":"Endurance and cycle-to-cycle uniformity improvement in tri-layered CeO2\/Ti\/CeO2 resistive switching devices by changing top electrode material","volume":"7","year":"2017","journal-title":"Sci. Rep."},{"key":"2024100110411421400_c57","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.12599","article-title":"Tailoring lithium intercalation pathway in 2D van der Waals heterostructure for high-speed edge-contacted floating-gate transistor and artificial synapses","year":"2024","journal-title":"InfoMat"},{"key":"2024100110411421400_c58","doi-asserted-by":"publisher","first-page":"0648","DOI":"10.1126\/sciadv.abh0648","article-title":"Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning","volume":"7","year":"2021","journal-title":"Sci. Adv."},{"key":"2024100110411421400_c59","doi-asserted-by":"publisher","first-page":"011308","DOI":"10.1063\/1.5124027","article-title":"Brain-inspired computing with memristors: Challenges in devices, circuits, and systems","volume":"7","year":"2020","journal-title":"Appl. Phys. Rev."},{"key":"2024100110411421400_c60","doi-asserted-by":"publisher","first-page":"144","DOI":"10.1007\/s42114-023-00713-5","article-title":"Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices","volume":"6","year":"2023","journal-title":"Adv. Compos. Hybrid Mater."},{"key":"2024100110411421400_c61","doi-asserted-by":"publisher","first-page":"457","DOI":"10.1109\/led.2015.2418342","article-title":"Optimization of conductance change in PrxCaxMnO3-based synaptic devices for neuromorphic systems","volume":"36","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"2024100110411421400_c62","unstructured":"H.\n            Xiao\n          , K.Rasul, and R.Vollgraf, \u201cFashion-MNIST: A novel image dataset for benchmarking machine learning algorithms,\u201d arXiv:1708.07747 (2017)."},{"key":"2024100110411421400_c63","doi-asserted-by":"publisher","first-page":"3412","DOI":"10.1039\/d0tc05738j","article-title":"An optoelectronic synaptic transistor with efficient dual modulation by light illumination","volume":"9","year":"2021","journal-title":"J.\u00a0Mater. Chem. C"},{"key":"2024100110411421400_c64","doi-asserted-by":"publisher","first-page":"238","DOI":"10.1039\/d3nh00421j","article-title":"Adapted MLP-mixer network based on crossbar arrays of fast and multilevel switching (Co\u2013Fe\u2013B)x(LiNbO3)x nanocomposite memristors","volume":"9","year":"2024","journal-title":"Nanoscale Horiz."},{"key":"2024100110411421400_c65","doi-asserted-by":"publisher","first-page":"54996","DOI":"10.1021\/acsami.3c13956","article-title":"Reliable memristive synapses based on parylene-MoOx nanocomposites for neuromorphic applications","volume":"15","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2024100110411421400_c66","doi-asserted-by":"publisher","first-page":"154702","DOI":"10.1063\/5.0206100","article-title":"Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications","volume":"160","year":"2024","journal-title":"J.\u00a0Chem. Phys."}],"container-title":["The Journal of Chemical Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jcp\/article-pdf\/doi\/10.1063\/5.0233031\/20184924\/134702_1_5.0233031.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jcp\/article-pdf\/doi\/10.1063\/5.0233031\/20184924\/134702_1_5.0233031.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T10:41:22Z","timestamp":1727779282000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jcp\/article\/161\/13\/134702\/3314800\/Enhanced-analog-switching-and-neuromorphic"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,1]]},"references-count":66,"journal-issue":{"issue":"13","published-print":{"date-parts":[[2024,10,7]]}},"URL":"https:\/\/doi.org\/10.1063\/5.0233031","relation":{},"ISSN":["0021-9606","1089-7690"],"issn-type":[{"value":"0021-9606","type":"print"},{"value":"1089-7690","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2024,10,7]]},"published":{"date-parts":[[2024,10,1]]},"article-number":"134702"}}