{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,22]],"date-time":"2026-10-22T17:22:32Z","timestamp":1792689752331,"version":"4.5.0"},"reference-count":26,"publisher":"AIP Publishing","issue":"12","funder":[{"DOI":"10.13039\/501100006769","name":"Russian Science Foundation","doi-asserted-by":"publisher","award":["24-19-00200"],"award-info":[{"award-number":["24-19-00200"]}],"id":[{"id":"10.13039\/501100006769","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006769","name":"Russian Science Foundation","doi-asserted-by":"publisher","award":["25-19-90201"],"award-info":[{"award-number":["25-19-90201"]}],"id":[{"id":"10.13039\/501100006769","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100015695","name":"Basis Foundation","doi-asserted-by":"publisher","award":["23-2-10-17-1"],"award-info":[{"award-number":["23-2-10-17-1"]}],"id":[{"id":"10.13039\/100015695","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2025,12,1]]},"abstract":"<jats:p>Memristors are promising electronic devices that can be used to create non-volatile resistive random access memory (RRAM) devices and\/or neuromorphic computing systems. The densest packing of RRAM elements, promising for practical applications, is achieved in the crossbar architecture when the memristors are located at the intersections of perpendicular electrode buses. However, in such an architecture, sneak path current (parasitic bypass current) problem arises, affecting the correct functioning of the elements of the crossbar matrix. This problem can be solved by adding a transistor that provides isolated access to each memristor element (1T1R architecture). However, in order to refine the manufacturing technology of such devices from both memristor (optimal layer materials and geometry) and access transistor (types and required characteristics) sides, it is necessary to correctly measure the characteristics of simpler passive (1R) arrays of memristors. This work proposes three measuring circuits for solving this problem with their advantages and disadvantages analyzed. It is shown that a combined approach to measuring various memristive characteristics is preferable. The results of the work will be useful in the study of passive arrays of crossbar memristors, including when developing the technology for creating arrays with the 1T1R architecture.<\/jats:p>","DOI":"10.1063\/5.0305504","type":"journal-article","created":{"date-parts":[[2025,12,5]],"date-time":"2025-12-05T13:49:21Z","timestamp":1764942561000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":2,"title":["Features of measuring of characteristics in passive crossbar arrays of memristors"],"prefix":"10.1063","volume":"96","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9362-0855","authenticated-orcid":false,"given":"Aleksandr I.","family":"Iliasov","sequence":"first","affiliation":[{"name":"National Research Center \u201cKurchatov Institute,\u201d 1 123182 Moscow,","place":["Russia"]},{"name":"Faculty of Physics, Lomonosov Moscow State University 2 , 119991 Moscow,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5393-0285","authenticated-orcid":false,"given":"Andrey V.","family":"Emelyanov","sequence":"additional","affiliation":[{"name":"National Research Center \u201cKurchatov Institute,\u201d 1 123182 Moscow,","place":["Russia"]},{"name":"Moscow Institute of Physics and Technology (State University) 3 , Dolgoprudny, 141700 Moscow Region,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-6302-9495","authenticated-orcid":false,"given":"Klim G.","family":"Mikhailov","sequence":"additional","affiliation":[{"name":"National Research Center \u201cKurchatov Institute,\u201d 1 123182 Moscow,","place":["Russia"]},{"name":"Faculty of Physics, Lomonosov Moscow State University 2 , 119991 Moscow,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pavel A.","family":"Forsh","sequence":"additional","affiliation":[{"name":"Faculty of Physics, Lomonosov Moscow State University 2 , 119991 Moscow,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vladimir V.","family":"Rylkov","sequence":"additional","affiliation":[{"name":"National Research Center \u201cKurchatov Institute,\u201d 1 123182 Moscow,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Viacheslav A.","family":"Demin","sequence":"additional","affiliation":[{"name":"National Research Center \u201cKurchatov Institute,\u201d 1 123182 Moscow,","place":["Russia"]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"317","published-online":{"date-parts":[[2025,12,5]]},"reference":[{"key":"2025120508491674900_c1","doi-asserted-by":"publisher","first-page":"1974","DOI":"10.1038\/s41467-024-45670-9","article-title":"Hardware implementation of memristor-based artificial neural networks","volume":"15","year":"2024","journal-title":"Nat. Commun."},{"key":"2025120508491674900_c2","doi-asserted-by":"publisher","first-page":"S72","DOI":"10.1134\/s2635167622070035","article-title":"Architecture and technology of neuromorphic memristive chips","volume":"17","year":"2022","journal-title":"Nanobiotechnol. Rep."},{"key":"2025120508491674900_c3","doi-asserted-by":"publisher","first-page":"115959","DOI":"10.1016\/j.chaos.2024.115959","article-title":"Investigation of in vitro neuronal activity processing using a CMOS-integrated ZrO2(Y)-based memristive crossbar","volume":"191","year":"2025","journal-title":"Chaos, Solitons Fractals"},{"key":"2025120508491674900_c4","doi-asserted-by":"publisher","first-page":"8484","DOI":"10.1039\/d5nr00456j","article-title":"Photosensitive resistive switching in parylene\u2013PbTe nanocomposite memristors for neuromorphic computing","volume":"17","year":"2025","journal-title":"Nanoscale"},{"key":"2025120508491674900_c5","doi-asserted-by":"publisher","first-page":"2310193","DOI":"10.1002\/adfm.202310193","article-title":"Synaptic characteristics and vector-matrix multiplication operation in highly uniform and cost-effective four-layer vertical RRAM array","volume":"34","year":"2024","journal-title":"Adv. Funct. Mater."},{"key":"2025120508491674900_c6","doi-asserted-by":"publisher","first-page":"504","DOI":"10.1038\/s41586-022-04992-8","article-title":"A compute-in-memory chip based on resistive random-access memory","volume":"608","year":"2022","journal-title":"Nature"},{"key":"2025120508491674900_c7","doi-asserted-by":"publisher","first-page":"3455","DOI":"10.3390\/nano12193455","article-title":"Convolutional neural network based on crossbar arrays of (Co-Fe-B)x(LiNbO3)100\u2212x nanocomposite memristors","volume":"12","year":"2022","journal-title":"Nanomaterials"},{"key":"2025120508491674900_c8","doi-asserted-by":"publisher","first-page":"054701","DOI":"10.1063\/5.0047571","article-title":"Current-limiting amplifier for high speed measurement of resistive switching data","volume":"92","year":"2021","journal-title":"Rev. Sci. Instrum."},{"key":"2025120508491674900_c9","doi-asserted-by":"publisher","first-page":"011308","DOI":"10.1063\/1.5124027","article-title":"Brain-inspired computing with memristors: Challenges in devices, circuits, and systems","volume":"7","year":"2020","journal-title":"Appl. Phys. Rev."},{"key":"2025120508491674900_c10","doi-asserted-by":"publisher","first-page":"238","DOI":"10.1039\/D3NH00421J","article-title":"Adapted MLP-mixer network based on crossbar arrays of fast and multilevel switching (Co\u2013Fe\u2013B)x (LiNbO 3)100\u2212x nanocomposite memristors","volume":"9","year":"2024","journal-title":"Nanoscale Horizons"},{"key":"2025120508491674900_c11","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1038\/s41563-019-0291-x","article-title":"Memristive crossbar arrays for brain-inspired computing","volume":"18","year":"2019","journal-title":"Nat. Mater."},{"key":"2025120508491674900_c12","doi-asserted-by":"publisher","first-page":"1811","DOI":"10.1039\/d0na00100g","article-title":"Research progress on solutions to the sneak path issue in memristor crossbar arrays","volume":"2","year":"2020","journal-title":"Nanoscale Adv."},{"key":"2025120508491674900_c13","doi-asserted-by":"publisher","first-page":"565","DOI":"10.1007\/s10825-020-01470-0","article-title":"Sneak, discharge, and leakage current issues in a high-dimensional 1T1M memristive crossbar","volume":"19","year":"2020","journal-title":"J.\u00a0Comput. Electron."},{"key":"2025120508491674900_c14","doi-asserted-by":"publisher","first-page":"1700665","DOI":"10.1002\/aelm.201700665","article-title":"Low-temperature-processed SiO x one diode\u2013one resistor crossbar array and its flexible memory application","volume":"4","year":"2018","journal-title":"Adv. Electron. Mater."},{"key":"2025120508491674900_c15","doi-asserted-by":"publisher","first-page":"17766","DOI":"10.1021\/acsami.3c18328","article-title":"1-Selector 1-Memristor configuration with multifunctional a-IGZO memristive devices fabricated at room temperature","volume":"16","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2025120508491674900_c16","doi-asserted-by":"publisher","first-page":"1705914","DOI":"10.1002\/adma.201705914","article-title":"Memristor-based analog computation and neural network classification with a dot product engine","volume":"30","year":"2018","journal-title":"Adv. Mater."},{"key":"2025120508491674900_c17","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","article-title":"Fully hardware-implemented memristor convolutional neural network","volume":"577","year":"2020","journal-title":"Nature"},{"key":"2025120508491674900_c18","doi-asserted-by":"publisher","first-page":"290","DOI":"10.1038\/s41928-019-0270-x","article-title":"A fully integrated reprogrammable memristor\u2013CMOS system for efficient multiply\u2013accumulate operations","volume":"2","year":"2019","journal-title":"Nat. Electron."},{"key":"2025120508491674900_c19","doi-asserted-by":"publisher","first-page":"468","DOI":"10.1134\/s2635167624601657","article-title":"Resistive Memory in 2T1R Architecture Based on Si MOSFETs and Nanocomposite Memristors","volume":"19","year":"2024","journal-title":"Nanobiotechnol. Rep."},{"key":"2025120508491674900_c20","doi-asserted-by":"publisher","first-page":"94","DOI":"10.3389\/fnins.2020.00094","article-title":"On-Chip TaOx-Based non-volatile resistive memory for in vitro neurointerfaces","volume":"14","year":"2020","journal-title":"Front. Neurosci."},{"key":"2025120508491674900_c21","doi-asserted-by":"publisher","first-page":"1800143","DOI":"10.1002\/aelm.201800143","article-title":"Recommended methods to study resistive switching devices","volume":"5","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"2025120508491674900_c22","doi-asserted-by":"publisher","first-page":"2100199","DOI":"10.1002\/pssr.202100199","article-title":"Recent progress in selector and self-rectifying devices for resistive random-access memory application","volume":"15","year":"2021","journal-title":"Physica Status Solidi\u2013Rapid Res. Lett."},{"key":"2025120508491674900_c23","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1007\/s12668-025-02024-z","article-title":"Parylene-based memristors in crossbar architecture: From stable resistive switching to synaptic plasticity","volume":"15","year":"2025","journal-title":"Bionanoscience"},{"key":"2025120508491674900_c24","doi-asserted-by":"publisher","first-page":"118","DOI":"10.1134\/s2635167622010050","article-title":"Arrays of nanocomposite crossbar memristors for the implementation of formal and spiking neuromorphic systems","volume":"17","year":"2022","journal-title":"Nanobiotechnol. Rep."},{"key":"2025120508491674900_c25","doi-asserted-by":"publisher","first-page":"54996","DOI":"10.1021\/acsami.3c13956","article-title":"Reliable memristive synapses based on Parylene-MoOx nanocomposites for neuromorphic applications","volume":"15","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"2025120508491674900_c26","doi-asserted-by":"publisher","first-page":"2400585","DOI":"10.1002\/admt.202400585","article-title":"Recent progress in memrsitor array structures and solutions for sneak path current reduction","volume":"10","year":"2025","journal-title":"Adv. Mater. Technol."}],"container-title":["Review of Scientific Instruments"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/rsi\/article-pdf\/doi\/10.1063\/5.0305504\/20828163\/124705_1_5.0305504.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/rsi\/article-pdf\/doi\/10.1063\/5.0305504\/20828163\/124705_1_5.0305504.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,12,5]],"date-time":"2025-12-05T13:49:22Z","timestamp":1764942562000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/rsi\/article\/96\/12\/124705\/3374159\/Features-of-measuring-of-characteristics-in"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,12,1]]},"references-count":26,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2025,12,1]]}},"URL":"https:\/\/doi.org\/10.1063\/5.0305504","relation":{},"ISSN":["0034-6748","1089-7623"],"issn-type":[{"value":"0034-6748","type":"print"},{"value":"1089-7623","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2025,12,1]]},"published":{"date-parts":[[2025,12,1]]},"article-number":"124705"}}