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The data obtained show that the devices present a linearity and a spatial resolution, of respectively, better than 99% and 20 \u03bcm for a spatial detection limit of about 80 mm, highly dependent on the characteristics exhibited by the collecting resistive layer that should have sheet resistivities in the range of 10 to 103 \u03a9\/sq, as predicted by the model proposed.<\/jats:p>","DOI":"10.1063\/1.1147098","type":"journal-article","created":{"date-parts":[[2002,7,26]],"date-time":"2002-07-26T12:03:30Z","timestamp":1027685010000},"page":"2702-2707","update-policy":"http:\/\/dx.doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":16,"title":["Role of the collecting resistive layer on the static characteristics of a 1D <i>a<\/i>-Si:H thin film position sensitive detector"],"prefix":"10.1063","volume":"67","author":[{"given":"E.","family":"Fortunato","sequence":"first","affiliation":[{"name":"Materials Science Department, Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes-CEMOP, Quinta da Torre, 2825 Monte de Caparica, Portugal"}]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[{"name":"Materials Science Department, Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes-CEMOP, Quinta da Torre, 2825 Monte de Caparica, Portugal"}]}],"member":"317","reference":[{"key":"2024020603061969900_r1","doi-asserted-by":"crossref","first-page":"1688","DOI":"10.1109\/16.231576","volume":"40","year":"1993","journal-title":"IEEE Trans. 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