{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,19]],"date-time":"2026-01-19T07:31:43Z","timestamp":1768807903834,"version":"3.49.0"},"reference-count":18,"publisher":"AIP Publishing","issue":"18","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2001,4,30]]},"abstract":"<jats:p>Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior of Pb(Zr,\u200aTi)O3 thin films via the direct observation of their domain structures. The study revealed a significant asymmetry of a switching pattern which is a function of the voltage polarity and original domain structure of individual grains. The phenomenon of asymmetric switching is attributed (1) to the presence of an internal built-in electric field at the bottom interface and (2) to the mechanical stress exerted by the SFM tip. The former effect results in incomplete 180\u00b0 switching, while the latter effect leads to a 90\u00b0 rotation of the polarization vector. The resulting shear stress deformation of the grain underneath the tip combined with the applied field effect propels polarization reversal in the adjacent grains.<\/jats:p>","DOI":"10.1063\/1.1366644","type":"journal-article","created":{"date-parts":[[2002,7,26]],"date-time":"2002-07-26T14:16:02Z","timestamp":1027692962000},"page":"2751-2753","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":164,"title":["Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy"],"prefix":"10.1063","volume":"78","author":[{"given":"A.","family":"Gruverman","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina\u200927695"}]},{"given":"A.","family":"Kholkin","sequence":"additional","affiliation":[{"name":"Department of Ceramics and Glass Engineering, University of Aveiro, 3810-193\u2009Aveiro, Portugal"}]},{"given":"A.","family":"Kingon","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina\u200927695"}]},{"given":"H.","family":"Tokumoto","sequence":"additional","affiliation":[{"name":"Joint Research Center for Atom Technology\u2014National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), Tsukuba, Ibaraki\u2009305, Japan"}]}],"member":"317","reference":[{"key":"2024020320022259300_r1","first-page":"22","volume":"51","year":"1998","journal-title":"Phys. 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