{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T11:24:54Z","timestamp":1768735494623,"version":"3.49.0"},"reference-count":41,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2003,4,15]]},"abstract":"<jats:p>Asymmetric metal\u2013ferroelectric\u2013metal (MFM) structures were manufactured by sol\u2013gel deposition of a lead zirconate-titanate (PZT with Zr\/Ti ratio 65\/35) film on Pt-coated Si, with a Au top electrode. The average remnant polarization of 9 \u03bcC\/cm2 and the coercive field of 39 kV\/cm were obtained from the hysteresis loop measurements. A detailed analysis of the polarization\u2013electric field (P\u2013E), capacitance\u2013voltage (C\u2013V), and current\u2013voltage (I\u2013V) measurement results allowed us to estimate the near-electrode space-charge region thickness (roughly half of the film thickness at zero voltage), net doping concentration (around 1018\u2009cm\u22123), built-in potential (in the 0.4\u20130.8 V range, depending on the injecting electrode), and dynamic dielectric constant (5.2). The current logarithm\u2013voltage dependence for the field-enhanced Schottky emission obeys a \u201c1\/4\u201d law. The spectral distribution of the short circuit current measured under continuous light illumination in the 290\u2013800 nm range exhibits a cutoff wavelength at 370 nm and a maximum sensitivity at about 340 nm. The estimated band-gap energy of the PZT material is 3.35 eV. The MFM structure is discussed in terms of two back-to-back Schottky diodes with a ferroelectric material in between. It is concluded that the semiconductor properties of the films are not negligible and, in certain conditions, are dominating over the ferroelectric ones.<\/jats:p>","DOI":"10.1063\/1.1562009","type":"journal-article","created":{"date-parts":[[2003,4,3]],"date-time":"2003-04-03T23:04:16Z","timestamp":1049411056000},"page":"4776-4783","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":101,"title":["Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol\u2013gel"],"prefix":"10.1063","volume":"93","author":[{"given":"I.","family":"Boerasu","sequence":"first","affiliation":[{"name":"Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057\u2009Braga, Portugal"}]},{"given":"L.","family":"Pintilie","sequence":"additional","affiliation":[{"name":"National Institute for Materials Physics, Bucharest-Magurele, P.O. Box MG-7, Romania"}]},{"given":"M.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057\u2009Braga, Portugal"}]},{"given":"M. I.","family":"Vasilevskiy","sequence":"additional","affiliation":[{"name":"Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057\u2009Braga, Portugal"}]},{"given":"M. J. M.","family":"Gomes","sequence":"additional","affiliation":[{"name":"Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057\u2009Braga, Portugal"}]}],"member":"317","reference":[{"key":"2024020616061177300_r1","doi-asserted-by":"crossref","first-page":"787","DOI":"10.1063\/1.341925","volume":"64","year":"1988","journal-title":"J. Appl. 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