{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,14]],"date-time":"2026-04-14T13:28:31Z","timestamp":1776173311679,"version":"3.50.1"},"reference-count":12,"publisher":"AIP Publishing","issue":"7","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2004,2,16]]},"abstract":"<jats:p>Cu(In,Ga)Se 2 (CIGS) absorber layers for thin-film solar cells were grown without sodium. Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. Efficiencies of 13.3% and 14.4% were achieved at substrate temperatures as low as 400 and 450\u200a\u00b0C, respectively. With the post-deposition treatment, the effects of Na on CIGS growth are excluded, and most of the Na is expected to reside at grain boundaries. The dominating cause for Na-induced device improvements might be passivation of grain boundaries.<\/jats:p>","DOI":"10.1063\/1.1646758","type":"journal-article","created":{"date-parts":[[2004,2,5]],"date-time":"2004-02-05T23:02:08Z","timestamp":1076022128000},"page":"1129-1131","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":301,"title":["Efficiency enhancement of Cu(In,Ga)Se2 solar cells due to post-deposition Na incorporation"],"prefix":"10.1063","volume":"84","author":[{"given":"D.","family":"Rudmann","sequence":"first","affiliation":[{"name":"Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Z\u00fcrich, Technopark, 8005\u2009Z\u00fcrich, Switzerland"}]},{"given":"A. F.","family":"da Cunha","sequence":"additional","affiliation":[{"name":"Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Z\u00fcrich, Technopark, 8005\u2009Z\u00fcrich, Switzerland"}]},{"given":"M.","family":"Kaelin","sequence":"additional","affiliation":[{"name":"Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Z\u00fcrich, Technopark, 8005\u2009Z\u00fcrich, Switzerland"}]},{"given":"F.","family":"Kurdesau","sequence":"additional","affiliation":[{"name":"Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Z\u00fcrich, Technopark, 8005\u2009Z\u00fcrich, Switzerland"}]},{"given":"H.","family":"Zogg","sequence":"additional","affiliation":[{"name":"Thin Film Physics Group, Laboratory for Solid State Physics, ETH (Swiss Federal Institute of Technology) Z\u00fcrich, Technopark, 8005\u2009Z\u00fcrich, Switzerland"}]},{"given":"A. 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