{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T20:48:36Z","timestamp":1759178916857},"reference-count":17,"publisher":"AIP Publishing","issue":"21","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2004,5,24]]},"abstract":"<jats:p>The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope 167mEr give direct evidence that the majority (\u224890%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900\u200a\u00b0C does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample.<\/jats:p>","DOI":"10.1063\/1.1756196","type":"journal-article","created":{"date-parts":[[2004,5,7]],"date-time":"2004-05-07T14:22:12Z","timestamp":1083939732000},"page":"4304-4306","update-policy":"http:\/\/dx.doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":14,"title":["Influence of O and C co-implantation on the lattice site of Er in GaN"],"prefix":"10.1063","volume":"84","author":[{"given":"B.","family":"De Vries","sequence":"first","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K. U. Leuven, Celestijnenlaan 200 D, 3001\u2009Leuven, Belgium"}]},{"given":"V.","family":"Matias","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K. U. 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