{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,6]],"date-time":"2024-02-06T14:14:18Z","timestamp":1707228858494},"reference-count":14,"publisher":"AIP Publishing","issue":"9","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2004,9,1]]},"abstract":"<jats:p>A simple method for crystallizing amorphous thin films was developed using platinum bottom electrodes as heating elements. A current was applied to tungsten wires in contact with the platinum and the temperature was measured using a type-K thermocouple. A proportional feedback algorithm was used for controlling the process. The performance of different platinum electrodes was studied. Pt films with different thicknesses were alternatively deposited over Ti and Zr at 700\u00b0C. Applying currents up to 2 A to the Pt films, the resistance dependence of temperature was studied. The maximum temperature, 675\u00b0C, was obtained when using 200\u2002nm\u2008Pt films deposited at 700\u00b0C over Ti, with a power consumption of 16\u2002W. The method was applied to the crystallization of PbZr0.52Ti0.48O3 thin films using Pt films deposited at 500\u00b0C over Ti and at 700\u00b0C over Zr. The results obtained for heat treatments at 650\u00b0C with 10\u00b0C\/s heating and cooling rates showed a pure perovskite phase; the ferroelectric properties were comparable with those from films crystallized by rapid thermal annealing.<\/jats:p>","DOI":"10.1063\/1.1783595","type":"journal-article","created":{"date-parts":[[2004,9,13]],"date-time":"2004-09-13T22:03:23Z","timestamp":1095113003000},"page":"2950-2954","update-policy":"http:\/\/dx.doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":2,"title":["Bottom electrode crystallization method for heat treatments on thin films"],"prefix":"10.1063","volume":"75","author":[{"given":"E.","family":"Joanni","sequence":"first","affiliation":[{"name":"INESC-Porto, Unidade de Optoelectr\u00f3nica Sistemas Electr\u00f3nicos, 4169-007 Porto, Portugal"}]},{"given":"A. 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