{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,15]],"date-time":"2026-04-15T19:11:32Z","timestamp":1776280292180,"version":"3.50.1"},"reference-count":14,"publisher":"AIP Publishing","issue":"13","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2004,9,27]]},"abstract":"<jats:p>We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2\u2215Vs, a gate voltage swing of 1.39V\u2215decade and an on\/off ratio of 3\u00d7105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.<\/jats:p>","DOI":"10.1063\/1.1790587","type":"journal-article","created":{"date-parts":[[2004,9,28]],"date-time":"2004-09-28T22:07:39Z","timestamp":1096409259000},"page":"2541-2543","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":491,"title":["Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature"],"prefix":"10.1063","volume":"85","author":[{"given":"Elvira M. C.","family":"Fortunato","sequence":"first","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Pedro M. C.","family":"Barquinha","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Ana C. M. B. G.","family":"Pimentel","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Alexandra M. F.","family":"Gon\u00e7alves","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Ant\u00f3nio J. S.","family":"Marques","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Rodrigo F. P.","family":"Martins","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Luis M.N.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Department of Materials Science\/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]}],"member":"317","reference":[{"key":"2024020404015955600_c1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1201\/9780203911778","volume-title":"Thin Film Transistors","author":"Kagan","year":"2003"},{"key":"2024020404015955600_c2","doi-asserted-by":"publisher","first-page":"1624","DOI":"10.1063\/1.1534627","volume":"93","year":"2003","journal-title":"J. Appl. 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