{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,1]],"date-time":"2026-03-01T03:01:49Z","timestamp":1772334109719,"version":"3.50.1"},"reference-count":17,"publisher":"AIP Publishing","issue":"12","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2004,9,20]]},"abstract":"<jats:p>This contribution is focused on Raman analysis of the InxGa1\u2212xN alloy. It presents direct evidence that both strain and composition effects must be taken into account to interpret the Raman experimental results. Raman studies have been commonly discussed in view of composition inhomogeneity only, neglecting the possible existence of strain depth variations, recently shown to occur for layers grown above the critical layer thickness. The effects of this variation on the A1(LO) phonon frequency could only be investigated by combining both structural and Raman measurements. In this letter, a set of InxGa1\u2212xN layers has been chemically etched during different periods, allowing the depth variation of the phonon frequency to be unambiguously evidenced. Comparing the Raman spectra before and after etching, two distinct InxGa1\u2212xN regions, differing on their strain state, are identified: a relaxed one, found near the surface region; another one, grown coherently (i.e., pseudomorphic) to the GaN buffer layer. These results are in excellent agreement with an additional reciprocal space map analysis.<\/jats:p>","DOI":"10.1063\/1.1791324","type":"journal-article","created":{"date-parts":[[2004,9,27]],"date-time":"2004-09-27T22:03:00Z","timestamp":1096322580000},"page":"2235-2237","update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":21,"title":["Direct evidence for strain inhomogeneity in InxGa1\u2212xN epilayers by Raman spectroscopy"],"prefix":"10.1063","volume":"85","author":[{"given":"M. R.","family":"Correia","sequence":"first","affiliation":[{"name":"Universidade de Aveiro, Departamento de F\u00edsica , 3810-193 Aveiro, Portugal"}]},{"given":"S.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro, Departamento de F\u00edsica , 3810-193 Aveiro, Portugal"}]},{"given":"E.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro, Departamento de F\u00edsica , 3810-193 Aveiro, Portugal"}]},{"given":"J.","family":"Frandon","sequence":"additional","affiliation":[{"name":"Laboratoire de Physique des Solides , CNRS-UMR 5477, Universit\u00e9 Paul Sabatier, 31062 Toulouse Cedex 4, France"}]},{"given":"I. M.","family":"Watson","sequence":"additional","affiliation":[{"name":"Institute of Photonics, University of Strathclyde , Glasgow G4 0NW, United Kingdom"}]},{"given":"C.","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Photonics, University of Strathclyde , Glasgow G4 0NW, United Kingdom"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear, Departamento de F\u00edsica , E.N. 10 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"A. D.","family":"Sequeira","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear, Departamento de F\u00edsica , E.N. 10 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"N.","family":"Franco","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear, Departamento de F\u00edsica , E.N. 10 2686-953 Sacav\u00e9m, Portugal"}]}],"member":"317","reference":[{"key":"2024020403585290100_c1","first-page":"333","volume-title":"Optoelectronic Properties of Semiconductors and Superlattices","author":"Manasreh","year":"2002"},{"key":"2024020403585290100_c2","doi-asserted-by":"publisher","first-page":"785","DOI":"10.1002\/(SICI)1521-3951(199911)216:1&lt;785::AID-PSSB785&gt;3.3.CO;2-K","volume":"216","year":"1999","journal-title":"Phys. Status Solidi B"},{"key":"2024020403585290100_c3","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1557\/PROC-468-213","volume":"468","year":"1997","journal-title":"Mater. Res. Soc. Symp. 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