{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T20:28:46Z","timestamp":1761596926030,"version":"3.41.2"},"reference-count":15,"publisher":"AIP Publishing","issue":"11","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2005,9,12]]},"abstract":"<jats:p>The intensity of Eu-related luminescence from ion-implanted GaN with a 10nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300\u00b0C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to D05-F27\u2008(\u223c622nm), D05-F37\u2008(\u223c664nm), and D05-F17\u2008(\u223c602nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the D05-F27 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356nm, and a broad subedge absorption band centred at \u223c385nm. Marked differences in the shape of the D05-F27 PL multiplet are demonstrated by selective excitation via the continuum\/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.<\/jats:p>","DOI":"10.1063\/1.2045551","type":"journal-article","created":{"date-parts":[[2005,9,7]],"date-time":"2005-09-07T22:06:32Z","timestamp":1126130792000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":81,"title":["Selectively excited photoluminescence from Eu-implanted GaN"],"prefix":"10.1063","volume":"87","author":[{"given":"K.","family":"Wang","sequence":"first","affiliation":[{"name":"University of Strathclyde Department of Physics, , Glasgow G4 0NG, United Kingdom"}]},{"given":"R. W.","family":"Martin","sequence":"additional","affiliation":[{"name":"University of Strathclyde Department of Physics, , Glasgow G4 0NG, United Kingdom"}]},{"given":"K. P.","family":"O\u2019Donnell","sequence":"additional","affiliation":[{"name":"University of Strathclyde Department of Physics, , Glasgow G4 0NG, United Kingdom"}]},{"given":"V.","family":"Katchkanov","sequence":"additional","affiliation":[{"name":"University of Strathclyde Department of Physics, , Glasgow G4 0NG, United Kingdom"}]},{"given":"E.","family":"Nogales","sequence":"additional","affiliation":[{"name":"University of Strathclyde Department of Physics, , Glasgow G4 0NG, United Kingdom"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Estrada Nacional 10 ITN, , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Estrada Nacional 10 ITN, , 2686-953 Sacav\u00e9m, Portugal"}]},{"given":"S.","family":"Ruffenach","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Montpellier II GES, , 34095 Montpellier, France"}]},{"given":"O.","family":"Briot","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Montpellier II GES, , 34095 Montpellier, France"}]}],"member":"317","published-online":{"date-parts":[[2005,9,8]]},"reference":[{"key":"2023070301035223700_c1","first-page":"33","volume":"24","year":"1999","journal-title":"MRS Bull."},{"key":"2023070301035223700_c2","doi-asserted-by":"publisher","first-page":"749","DOI":"10.1109\/JSTQE.2002.801690","volume":"8","year":"2002","journal-title":"IEEE J. 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