{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,12]],"date-time":"2026-03-12T15:32:39Z","timestamp":1773329559115,"version":"3.50.1"},"reference-count":37,"publisher":"AIP Publishing","issue":"12","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2005,12,15]]},"abstract":"<jats:p>A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal-Pb(Zr,Ti)O3-metal samples with different Zr\u2215Ti ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around 1018cm\u22123 were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the 1020\u20131021cm\u22123 range. The total thickness of the interface layer ranges from 3to35nm, depending on the Zr\u2215Ti ratio, on the shape of the hysteresis loop, and on the electrode material. The simulated I-V characteristics is fitted to the experimental one using the potential barrier and Richardson\u2019s constant as parameters. The potential barrier is determined to be in the 1.09\u20131.37eV range and Richardson\u2019s constant is 520Acm\u22122K\u22122.<\/jats:p>","DOI":"10.1063\/1.2148623","type":"journal-article","created":{"date-parts":[[2005,12,22]],"date-time":"2005-12-22T23:01:57Z","timestamp":1135292517000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":142,"title":["Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films"],"prefix":"10.1063","volume":"98","author":[{"given":"L.","family":"Pintilie","sequence":"first","affiliation":[{"name":"NIMP , P.O. Box MG-7, 76900 Bucharest-Magurele, Romania"}]},{"given":"I.","family":"Boerasu","sequence":"additional","affiliation":[{"name":"NIMP , P.O. Box MG-7, 76900 Bucharest-Magurele, Romania"}]},{"given":"M. J. M.","family":"Gomes","sequence":"additional","affiliation":[{"name":"University do Minho Department of Physics, , Campus de Gualtar, 4710-057 Braga, Portugal"}]},{"given":"T.","family":"Zhao","sequence":"additional","affiliation":[{"name":"University of Maryland Materials Research Science and Engineering Center, , College Park, Maryland 20742"}]},{"given":"R.","family":"Ramesh","sequence":"additional","affiliation":[{"name":"University of California at Berkeley Department of Materials Science and Engineering, , 210 Hearst Memorial Mining Building, Berkeley, California 94720-1760"}]},{"given":"M.","family":"Alexe","sequence":"additional","affiliation":[{"name":"Max Planck Institute for Microstructure Physics , Weinberg 2, 06120 Halle, Germany"}]}],"member":"317","published-online":{"date-parts":[[2005,12,23]]},"reference":[{"key":"2023080102313997300_c1","volume-title":"Ferroelectric Memories","author":"Itoh","year":"2000"},{"key":"2023080102313997300_c2","doi-asserted-by":"publisher","first-page":"2107","DOI":"10.1103\/PhysRevLett.73.2107","volume":"73","year":"1994","journal-title":"Phys. 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