{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,5]],"date-time":"2025-10-05T12:30:46Z","timestamp":1759667446205,"version":"3.41.2"},"reference-count":11,"publisher":"AIP Publishing","issue":"8","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2006,4,15]]},"abstract":"<jats:p>Double-barrier magnetic tunnel junction (MTJ) cells incorporating one thermal barrier (GeSbTe) were fabricated for improved thermally assisted magnetic switching. The MTJ has two Al2O3 barriers with a common weakly pinned structure (storage layer) and two pinned layers (reference). The structural quality of the double junction stack and the roughness at the (buffer\/thermal barrier) level were investigated and optimized. To minimize the required heating during writing, the blocking temperature (TB) of the storage layer is reduced to 110\u2009\u00b0C by thinning the MnIr layer to 80 \u00c5, while a strong exchange coupling and TB\u223c300\u00b0C are obtained at the reference layers with a synthetic antiferromagnetically coupled CoFeB\u2215Ru\u2215CoFeB structure pinned to 250-\u00c5-thick MnIr. For the write experiments, the current flowing through the MTJ (patterned down to 2\u03bcm2) increases the temperature above the storage layer TB, under an external field of +\u2215\u221280Oe. Current densities &amp;lt;1mA\u2215\u03bcm2 were enough to write in the MTJs with a thermal barrier (almost half the values needed without thermal barriers, which also showed a stronger dependence of the write power on the junction area). Write power values of the order of 0.3\u20131.8mW\u2215\u03bcm2 were achieved.<\/jats:p>","DOI":"10.1063\/1.2162813","type":"journal-article","created":{"date-parts":[[2006,6,12]],"date-time":"2006-06-12T16:13:20Z","timestamp":1150128800000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":12,"title":["Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells"],"prefix":"10.1063","volume":"99","author":[{"given":"S.","family":"Cardoso","sequence":"first","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"},{"name":"Instituto Superior Tecnico (IST) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"}]},{"given":"R.","family":"Ferreira","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"},{"name":"Instituto Superior Tecnico (IST) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"}]},{"given":"F.","family":"Silva","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"},{"name":"Instituto Superior Tecnico (IST) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"}]},{"given":"P. P.","family":"Freitas","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"},{"name":"Instituto Superior Tecnico (IST) , R. Alves Redol 9-1, 1000-029 Lisbon, Portugal and , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"}]},{"given":"L. V.","family":"Melo","sequence":"additional","affiliation":[{"name":"Instituto Superior Tecnico (IST) , Physics Department, Avenida Rovisco Pais, 1096 Lisbon, Portugal"}]},{"given":"R. C.","family":"Sousa","sequence":"additional","affiliation":[{"name":"SPINTEC-URA CEA\/DSM-CNRS\/SPM-STIC No. 2512 , CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex, France and , 17 rue des Martyrs, 38054 Grenoble Cedex, France"},{"name":"CEA\/DRT\/L\u00e9ti , CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex, France and , 17 rue des Martyrs, 38054 Grenoble Cedex, France"}]},{"given":"O.","family":"Redon","sequence":"additional","affiliation":[{"name":"SPINTEC-URA CEA\/DSM-CNRS\/SPM-STIC No. 2512 , CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex, France and , 17 rue des Martyrs, 38054 Grenoble Cedex, France"},{"name":"CEA\/DRT\/L\u00e9ti , CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex, France and , 17 rue des Martyrs, 38054 Grenoble Cedex, France"}]},{"given":"M.","family":"MacKenzie","sequence":"additional","affiliation":[{"name":"University of Glasgow Department of Physics and Astronomy, , Glasgow G12 8QQ, United Kingdom"}]},{"given":"J. N.","family":"Chapman","sequence":"additional","affiliation":[{"name":"University of Glasgow Department of Physics and Astronomy, , Glasgow G12 8QQ, United Kingdom"}]}],"member":"317","published-online":{"date-parts":[[2006,4,19]]},"reference":[{"volume-title":"Magnetoelectronics","year":"2004","author":"Johnson","key":"2023072904584618200_c1"},{"key":"2023072904584618200_c2","doi-asserted-by":"publisher","first-page":"6403","DOI":"10.1063\/1.372720","volume":"87","year":"2000","journal-title":"J. Appl. Phys."},{"key":"2023072904584618200_c3","doi-asserted-by":"publisher","first-page":"945","DOI":"10.1063\/1.1646211","volume":"84","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023072904584618200_c4","doi-asserted-by":"publisher","first-page":"6783","DOI":"10.1063\/1.1667413","volume":"95","year":"2004","journal-title":"J. Appl. 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