{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T11:28:32Z","timestamp":1775042912109,"version":"3.50.1"},"reference-count":26,"publisher":"AIP Publishing","issue":"2","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2006,7,15]]},"abstract":"<jats:p>We report on the lattice location of ion-implanted Ca and Sr in thin films of single-crystalline wurtzite GaN. Using the emission channeling technique the angular distributions of \u03b2\u2212 particles emitted by the radioactive isotopes 45Ca\u2008(t1\/2=163.8\u2002d) and 89Sr\u2008(t1\/2=50.53\u2002d) were monitored with a position-sensitive detector following 60\u2002keV room-temperature implantation. Our experiments give direct evidence that \u223c90% of Ca and &amp;gt;60% of Sr atoms were occupying substitutional Ga sites with root mean square displacements of the order of 0.15\u20130.30\u2002\u00c5, i.e., larger than the expected thermal vibration amplitude of 0.074\u2002\u00c5. Annealing the Ca implanted samples at 1100\u20131350\u2002\u00b0C in high-pressure N2 atmosphere resulted in a better incorporation into the substitutional Ga site. The Sr implanted sample showed a small decrease in rms displacements for vacuum annealing up to 900\u2002\u00b0C, while the substitutional fraction remained nearly constant. The annealing behavior of the rms displacements can explain why annealing temperatures above 1100\u2002\u00b0C are needed to achieve electrical and optical activations, despite the fact that the majority of the acceptors are already located on Ga sites immediately after ion implantation.<\/jats:p>","DOI":"10.1063\/1.2215091","type":"journal-article","created":{"date-parts":[[2006,8,9]],"date-time":"2006-08-09T17:02:20Z","timestamp":1155142940000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":8,"title":["Lattice site location and annealing behavior of implanted Ca and Sr in GaN"],"prefix":"10.1063","volume":"100","author":[{"given":"B.","family":"De Vries","sequence":"first","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium and INPAC, K.U. Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium"}]},{"given":"A.","family":"Vantomme","sequence":"additional","affiliation":[{"name":"Instituut voor Kern- en Stralingsfysica, K.U. Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium and INPAC, K.U. Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium"}]},{"given":"U.","family":"Wahl","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear, Estrada Nacional 10, 2686-953, Sacav\u00e9m, Portugal and Centro de F\u00edsica Nuclear da Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisboa, Portugal"}]},{"given":"J. G.","family":"Correia","sequence":"additional","affiliation":[{"name":"ITN, Estrada Nacional 10, 2686-953, Sacav\u00e9m, Portugal; Centro de F\u00edsica Nuclear da Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisboa, Portugal; and CERN-EP, 1211 Geneva 23, Switzerland"}]},{"given":"J. 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