{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T06:59:17Z","timestamp":1775458757161,"version":"3.50.1"},"reference-count":31,"publisher":"AIP Publishing","issue":"7","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2006,10,1]]},"abstract":"<jats:p>The crystallographic nature of the damage created in GaN by 300keV rare earth ions has been investigated following implantation at room temperature by varying the fluence of Er, Eu, or Tm from 7\u00d71013to2\u00d71016at.\u2215cm2. There is a build up of point defects clusters, which increases in density and depth versus the ion fluence. When a threshold around 3\u00d71015at.\u2215cm2 is reached, a nanocrystalline surface layer is observed. From the lowest fluence, we point out the formation of basal stacking faults, with a majority of I1. Their density also increases with the fluence, but it is seen to saturate at the onset of the observation of the surface nanocrystalline layer. Extrinsic E faults bounded by the c\u22152 partials have also been identified; however, most of the E stacking faults transform to I1 which are noticed to fold easily from basal to prismatic planes by switching or not to the Drum atomic configuration.<\/jats:p>","DOI":"10.1063\/1.2357845","type":"journal-article","created":{"date-parts":[[2006,10,17]],"date-time":"2006-10-17T17:20:59Z","timestamp":1161105659000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":55,"title":["Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation"],"prefix":"10.1063","volume":"100","author":[{"given":"F.","family":"Gloux","sequence":"first","affiliation":[{"name":"SIFCOM , UMR 6176 CNRS ENSICAEN, 6 Boulevard du Mar\u00e9chal Juin, 14050 Caen, France"}]},{"given":"T.","family":"Wojtowicz","sequence":"additional","affiliation":[{"name":"SIFCOM , UMR 6176 CNRS ENSICAEN, 6 Boulevard du Mar\u00e9chal Juin, 14050 Caen, France"}]},{"given":"P.","family":"Ruterana","sequence":"additional","affiliation":[{"name":"SIFCOM , UMR 6176 CNRS ENSICAEN, 6 Boulevard du Mar\u00e9chal Juin, 14050 Caen, France"}]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear , EN 10, 2686-953 Savac\u00e9m, Portugal"}]},{"given":"E.","family":"Alves","sequence":"additional","affiliation":[{"name":"Instituto Tecnol\u00f3gico e Nuclear , EN 10, 2686-953 Savac\u00e9m, Portugal"}]}],"member":"317","published-online":{"date-parts":[[2006,10,13]]},"reference":[{"key":"2023070320552923700_c1","doi-asserted-by":"publisher","first-page":"1888","DOI":"10.1063\/1.1461884","volume":"80","year":"2002","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c2","doi-asserted-by":"publisher","first-page":"502","DOI":"10.1063\/1.1539301","volume":"82","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c3","doi-asserted-by":"publisher","first-page":"4588","DOI":"10.1063\/1.1821630","volume":"85","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c4","doi-asserted-by":"publisher","first-page":"1943","DOI":"10.1063\/1.1504873","volume":"81","year":"2002","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c5","doi-asserted-by":"publisher","first-page":"2244","DOI":"10.1063\/1.1797563","volume":"85","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c6","doi-asserted-by":"publisher","first-page":"112107","DOI":"10.1063\/1.2045551","volume":"87","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c7","first-page":"750","volume":"28","year":"2006","journal-title":"Opt. Mater. (Amsterdam, Neth.)"},{"key":"2023070320552923700_c8","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1063\/1.371145","volume":"86","year":"1999","journal-title":"J. Appl. Phys."},{"key":"2023070320552923700_c9","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1016\/S0927-796X(00)00028-0","volume":"30","year":"2000","journal-title":"Mater. Sci. Eng., R."},{"key":"2023070320552923700_c10","doi-asserted-by":"publisher","first-page":"749","DOI":"10.1109\/JSTQE.2002.801690","volume":"8","year":"2002","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"2023070320552923700_c11","doi-asserted-by":"publisher","first-page":"2530","DOI":"10.1103\/PhysRevB.57.2530","volume":"57","year":"1998","journal-title":"Phys. Rev. B"},{"key":"2023070320552923700_c12","doi-asserted-by":"publisher","first-page":"7510","DOI":"10.1103\/PhysRevB.62.7510","volume":"62","year":"2000","journal-title":"Phys. Rev. B"},{"key":"2023070320552923700_c13","doi-asserted-by":"publisher","first-page":"035202","DOI":"10.1103\/PhysRevB.64.035202","volume":"64","year":"2001","journal-title":"Phys. Rev. B"},{"key":"2023070320552923700_c14","doi-asserted-by":"publisher","first-page":"51","DOI":"10.1016\/S0927-796X(01)00028-6","volume":"33","year":"2001","journal-title":"Mater. Sci. Eng., R."},{"key":"2023070320552923700_c15","doi-asserted-by":"publisher","first-page":"123504","DOI":"10.1063\/1.2143120","volume":"98","year":"2005","journal-title":"J. Appl. Phys."},{"key":"2023070320552923700_c16","doi-asserted-by":"publisher","first-page":"992","DOI":"10.1063\/1.112172","volume":"65","year":"1994","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c17","doi-asserted-by":"publisher","first-page":"1244","DOI":"10.1063\/1.121034","volume":"72","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c18","doi-asserted-by":"publisher","first-page":"6343","DOI":"10.1063\/1.364369","volume":"81","year":"1997","journal-title":"J. Appl. Phys."},{"key":"2023070320552923700_c19","doi-asserted-by":"publisher","first-page":"2929","DOI":"10.1063\/1.1436297","volume":"91","year":"2002","journal-title":"J. Appl. Phys."},{"key":"2023070320552923700_c20","doi-asserted-by":"publisher","first-page":"2712","DOI":"10.1063\/1.1801686","volume":"85","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c21","doi-asserted-by":"publisher","first-page":"738","DOI":"10.1016\/j.optmat.2005.09.012","volume":"28","year":"2006","journal-title":"Opt. Mater. (Amsterdam, Neth.)"},{"key":"2023070320552923700_c22","doi-asserted-by":"crossref","first-page":"2945","DOI":"10.1557\/JMR.2002.0427","volume":"17","year":"2002","journal-title":"J. Mater. Res."},{"key":"2023070320552923700_c23","first-page":"763","volume":"28","year":"2006","journal-title":"Opt. Mater. (Amsterdam, Neth.)"},{"key":"2023070320552923700_c24","doi-asserted-by":"publisher","first-page":"G34","DOI":"10.1149\/1.1541257","volume":"6","year":"2003","journal-title":"Electrochem. Solid-State Lett."},{"key":"2023070320552923700_c25","doi-asserted-by":"publisher","first-page":"694","DOI":"10.1063\/1.122990","volume":"74","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c26","doi-asserted-by":"crossref","first-page":"737","DOI":"10.1016\/j.spmi.2004.09.030","volume":"36","year":"2004","journal-title":"Superlattices Microstruct."},{"key":"2023070320552923700_c27","first-page":"511","volume":"5","year":"2003","journal-title":"Mater. Sci. Semicond. Process."},{"key":"2023070320552923700_c28","doi-asserted-by":"publisher","first-page":"227","DOI":"10.1063\/1.1771806","volume":"85","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023070320552923700_c29","doi-asserted-by":"publisher","first-page":"15917","DOI":"10.1103\/PhysRevB.59.15917","volume":"59","year":"1999","journal-title":"Phys. Rev. B"},{"key":"2023070320552923700_c30","doi-asserted-by":"publisher","first-page":"70","DOI":"10.1016\/S0921-5107(02)00600-1","volume":"98","year":"2003","journal-title":"Mater. Sci. Eng., B"},{"key":"2023070320552923700_c31","doi-asserted-by":"publisher","first-page":"063514","DOI":"10.1063\/1.2014937","volume":"98","year":"2005","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Applied Physics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.2357845\/14971365\/073520_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/jap\/article-pdf\/doi\/10.1063\/1.2357845\/14971365\/073520_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,3]],"date-time":"2023-07-03T23:55:06Z","timestamp":1688428506000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/jap\/article\/100\/7\/073520\/342918\/Transmission-electron-microscopy-investigation-of"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2006,10,1]]},"references-count":31,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2006,10,1]]}},"URL":"https:\/\/doi.org\/10.1063\/1.2357845","relation":{},"ISSN":["0021-8979","1089-7550"],"issn-type":[{"value":"0021-8979","type":"print"},{"value":"1089-7550","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2006,10,1]]},"published":{"date-parts":[[2006,10,1]]},"article-number":"073520"}}