{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,6]],"date-time":"2026-03-06T13:28:51Z","timestamp":1772803731495,"version":"3.50.1"},"reference-count":23,"publisher":"AIP Publishing","issue":"1","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2007,7,1]]},"abstract":"<jats:p>Hall effect measurements in the range 20\u2013370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550\u2009\u00b0C and 930\u2009\u00b0C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930\u2009\u00b0C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550\u2009\u00b0C, while a degenerate surface channel was formed after annealing at 930\u2009\u00b0C. In addition, Rutherford backscattering and channeling spectrometry (RBS\/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS\/C measurements reveal that annealing at 930\u2009\u00b0C leads to significant improvement of the crystalline quality of the material, while annealing at 550\u2009\u00b0C results in the segregation of a nonchanneling impurity at the surface.<\/jats:p>","DOI":"10.1063\/1.2751413","type":"journal-article","created":{"date-parts":[[2007,7,6]],"date-time":"2007-07-06T02:38:31Z","timestamp":1183689511000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":21,"title":["Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO"],"prefix":"10.1063","volume":"102","author":[{"given":"G. H.","family":"Kassier","sequence":"first","affiliation":[{"name":"University of Pretoria Department of Physics, , Pretoria 0002, South Africa"}]},{"given":"M.","family":"Hayes","sequence":"additional","affiliation":[{"name":"University of Pretoria Department of Physics, , Pretoria 0002, South Africa"}]},{"given":"F. D.","family":"Auret","sequence":"additional","affiliation":[{"name":"University of Pretoria Department of Physics, , Pretoria 0002, South Africa"}]},{"given":"M.","family":"Mamor","sequence":"additional","affiliation":[{"name":"Sultan Qaboos University Department of Physics, College of Science, , P.O. Box 36, Muscat 123, Oman"}]},{"given":"K.","family":"Bouziane","sequence":"additional","affiliation":[{"name":"Sultan Qaboos University Department of Physics, College of Science, , P.O. 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