{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T20:15:10Z","timestamp":1774383310788,"version":"3.50.1"},"reference-count":17,"publisher":"AIP Publishing","issue":"7","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2007,8,13]]},"abstract":"<jats:p>Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnO\u2215c-Al2O3 using low temperature\/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c-Al2O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.<\/jats:p>","DOI":"10.1063\/1.2770655","type":"journal-article","created":{"date-parts":[[2007,8,17]],"date-time":"2007-08-17T14:07:01Z","timestamp":1187359621000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":103,"title":["Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN"],"prefix":"10.1063","volume":"91","author":[{"given":"D. J.","family":"Rogers","sequence":"first","affiliation":[{"name":"Nanovation SARL , 103 bis Rue de Versailles, Orsay 91400, France"}]},{"given":"F.","family":"Hosseini Teherani","sequence":"additional","affiliation":[{"name":"Nanovation SARL , 103 bis Rue de Versailles, Orsay 91400, France"}]},{"given":"A.","family":"Ougazzaden","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology , UMI 2958, GT-CNRS, 2-3 Rue Marconi, 57070 Metz, France"}]},{"given":"S.","family":"Gautier","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Metz and SUPELEC LMOPS, UMR CNRS 7132, , 2 Rue E. Belin, 57070 Metz, France"}]},{"given":"L.","family":"Divay","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Technologie de Troyes , 10-12 Rue Marie Curie, 10010 Troyes Cedex, France"}]},{"given":"A.","family":"Lusson","sequence":"additional","affiliation":[{"name":"UVSQ GEMAC, CNRS UMR 8635, , 1 Place Aristide Briand, 92190 Meudon, France"}]},{"given":"O.","family":"Durand","sequence":"additional","affiliation":[{"name":"Thales Research and Technology France , Route D\u00e9partementale 128, F-91767 Palaiseau Cedex, France"}]},{"given":"F.","family":"Wyczisk","sequence":"additional","affiliation":[{"name":"Thales Research and Technology France , Route D\u00e9partementale 128, F-91767 Palaiseau Cedex, France"}]},{"given":"G.","family":"Garry","sequence":"additional","affiliation":[{"name":"Thales Research and Technology France , Route D\u00e9partementale 128, F-91767 Palaiseau Cedex, France"}]},{"given":"T.","family":"Monteiro","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro Departamento de Fisica e I3N, , 3810-193 Aveiro, Portugal"}]},{"given":"M. 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