{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T11:16:08Z","timestamp":1775042168332,"version":"3.50.1"},"reference-count":15,"publisher":"AIP Publishing","issue":"19","content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2007,11,5]]},"abstract":"<jats:p>Resistive switching in nonvolatile, two terminal organic memories can be due to the presence of a native oxide layer at an aluminum electrode. Reproducible solid state memories can be realized by deliberately adding a thin sputtered Al2O3 layer to nominal electron-only, hole-only, and bipolar organic diodes. Before memory operation, the devices have to be formed at an electric field of 109V\u2215m, corresponding to soft breakdown of Al2O3. After forming, the structures show pronounced negative differential resistance and the local maximum in the current scales with the thickness of the oxide layer. The polymer acts as a current limiting series resistance.<\/jats:p>","DOI":"10.1063\/1.2806275","type":"journal-article","created":{"date-parts":[[2007,11,7]],"date-time":"2007-11-07T23:12:36Z","timestamp":1194477156000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":125,"title":["Reproducible resistive switching in nonvolatile organic memories"],"prefix":"10.1063","volume":"91","author":[{"given":"Frank","family":"Verbakel","sequence":"first","affiliation":[{"name":"Eindhoven University of Technology Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"},{"name":"Dutch Polymer Institute (DPI) Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"}]},{"given":"Stefan C. J.","family":"Meskers","sequence":"additional","affiliation":[{"name":"Eindhoven University of Technology Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"},{"name":"Dutch Polymer Institute (DPI) Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"}]},{"given":"Ren\u00e9 A. J.","family":"Janssen","sequence":"additional","affiliation":[{"name":"Eindhoven University of Technology Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"},{"name":"Dutch Polymer Institute (DPI) Molecular Materials and Nanosystems, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , P.O. Box 902, 5600 AX Eindhoven, The Netherlands"}]},{"given":"Henrique L.","family":"Gomes","sequence":"additional","affiliation":[{"name":"Universidade do Algarve Centre of Electronic Optoelectronics and Telecommunications (CEOT), , Campus de Gambelas, 8000 Faro, Portugal"}]},{"given":"Michael","family":"C\u00f6lle","sequence":"additional","affiliation":[{"name":"Philips Research Laboratories , High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands"}]},{"given":"Michael","family":"B\u00fcchel","sequence":"additional","affiliation":[{"name":"Philips Research Laboratories , High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands"}]},{"given":"Dago M.","family":"de Leeuw","sequence":"additional","affiliation":[{"name":"Philips Research Laboratories , High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands"}]}],"member":"317","published-online":{"date-parts":[[2007,11,7]]},"reference":[{"key":"2023062214354751000_c1","doi-asserted-by":"publisher","first-page":"1452","DOI":"10.1002\/adma.200602564","volume":"19","year":"2007","journal-title":"Adv. Mater. (Weinheim, Ger.)"},{"key":"2023062214354751000_c2","doi-asserted-by":"publisher","first-page":"1419","DOI":"10.1063\/1.1556555","volume":"82","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"2023062214354751000_c3","doi-asserted-by":"publisher","first-page":"1933","DOI":"10.1002\/adfm.200500130","volume":"15","year":"2005","journal-title":"Adv. Funct. Mater."},{"key":"2023062214354751000_c4","doi-asserted-by":"crossref","first-page":"435","DOI":"10.1080\/002072196136607","volume":"81","year":"1996","journal-title":"Int. J. Electron."},{"key":"2023062214354751000_c5","doi-asserted-by":"crossref","first-page":"388","DOI":"10.1002\/pssa.200306696","volume":"200","year":"2003","journal-title":"Phys. Status Solidi A"},{"key":"2023062214354751000_c6","doi-asserted-by":"publisher","first-page":"1034","DOI":"10.1016\/S0379-6779(98)00210-0","volume":"102","year":"1999","journal-title":"Synth. Met."},{"key":"2023062214354751000_c7","doi-asserted-by":"publisher","first-page":"1129","DOI":"10.1088\/0034-4885\/33\/3\/306","volume":"33","year":"1970","journal-title":"Rep. Prog. Phys."},{"key":"2023062214354751000_c8","doi-asserted-by":"publisher","first-page":"305","DOI":"10.1016\/j.orgel.2006.03.014","volume":"7","year":"2006","journal-title":"Org. Electron."},{"key":"2023062214354751000_c9","doi-asserted-by":"publisher","first-page":"054309","DOI":"10.1063\/1.2337252","volume":"100","year":"2006","journal-title":"J. Appl. Phys."},{"key":"2023062214354751000_c10","doi-asserted-by":"publisher","first-page":"1440","DOI":"10.1002\/adma.200500225","volume":"17","year":"2005","journal-title":"Adv. Mater. (Weinheim, Ger.)"},{"key":"2023062214354751000_c11","doi-asserted-by":"publisher","first-page":"23812","DOI":"10.1021\/jp0649899","volume":"110","year":"2006","journal-title":"J. Phys. Chem. B"},{"key":"2023062214354751000_c12","doi-asserted-by":"publisher","first-page":"607","DOI":"10.1063\/1.1643547","volume":"84","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"2023062214354751000_c13","doi-asserted-by":"publisher","first-page":"77","DOI":"10.1098\/rspa.1967.0191","volume":"301","year":"1967","journal-title":"Proc. R. Soc. London, Ser. A"},{"key":"2023062214354751000_c14","doi-asserted-by":"crossref","first-page":"1557","DOI":"10.1016\/S0038-1101(00)00125-8","volume":"44","year":"2000","journal-title":"Solid-State Electron."},{"key":"2023062214354751000_c15","doi-asserted-by":"publisher","first-page":"953","DOI":"10.1116\/1.1565344","volume":"21","year":"2003","journal-title":"J. Vac. Sci. Technol. B"}],"container-title":["Applied Physics Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.2806275\/13773460\/192103_1_online.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/pubs.aip.org\/aip\/apl\/article-pdf\/doi\/10.1063\/1.2806275\/13773460\/192103_1_online.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,22]],"date-time":"2023-06-22T22:09:57Z","timestamp":1687471797000},"score":1,"resource":{"primary":{"URL":"https:\/\/pubs.aip.org\/apl\/article\/91\/19\/192103\/119065\/Reproducible-resistive-switching-in-nonvolatile"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,11,5]]},"references-count":15,"journal-issue":{"issue":"19","published-print":{"date-parts":[[2007,11,5]]}},"URL":"https:\/\/doi.org\/10.1063\/1.2806275","relation":{},"ISSN":["0003-6951","1077-3118"],"issn-type":[{"value":"0003-6951","type":"print"},{"value":"1077-3118","type":"electronic"}],"subject":[],"published-other":{"date-parts":[[2007,11,5]]},"published":{"date-parts":[[2007,11,5]]},"article-number":"192103"}}